We study charge fractionalization in bilayer graphene which is intimately related to its zero modes. In the unbiased case, the valley zero modes occur in pairs rendering it unsuitable for charge fractionalization. A bias plays the role of a bosonic field with nontrivial topology allowing for the exploration of Dirac-like dynamics at higher particle momenta. It also induces an odd number of zero modes, which, together with the conjugation symmetry between positive and negative energy states, are the requisite conditions for charge fractionalization. A self-conjugate, localized zero mode is constructed for a semi-infinite graphene sheet with zigzag edge; scenarios can occur readily where one sublattice component (pseudospin) dominates. While the other valley also has a similar zero mode, a layer asymmetry can be invoked to lift this degeneracy allowing for detection of distinguishable charge-1/2 edge states per valley.
We show that the fractional statistics of quasiparticles in dimerized graphene, in recent proposals for charge and statistics fractionalization, can have two realizations depending whether elementary objects can be considered as point-like or extended objects. Therefore, there are two phases of proposed excitations and we give their topological descriptions with their respective statistics. We propose that a natural setting for fractionalization are certain systems with excitonic instabilities and demonstrate this by an example of graphene bilayer.
A real-space formulation is given for the recently discussed exciton condensate in a symmetrically biased graphene bilayer. We show that in the continuum limit an oddly-quantized vortex in this condensate binds exactly one zero mode per valley index of the bilayer. In the full lattice model the zero modes are split slightly due to intervalley mixing. We support these results by an exact numerical diagonalization of the lattice Hamiltonian. We also discuss the effect of the zero modes on the charge content of these vortices and deduce some of their interesting properties.
We study in this paper the edge polarizations and their consequences for a biased Bernal stacked bilayer graphene nanoribbon with zigzag termination. The magnetic states are classified according to the interlayer and intralayer couplings between the edge polarizations, and the magnetic phase diagram of doping versus bias voltage is given. Coplanar magnetic phase is found and the variation of its magnetic structure with the bias voltage is investigated. For all the magnetic states, we also discuss the possibility of the half-metallicity, and for a ribbon with perfect zigzag edges we predict sev…
We study the energy spectrum of a graphene bilayer in the presence of transverse electric and magnetic fields. We find that the resulting Landau levels exhibit a nonmonotonic dependence on the electric field, as well as numerous level crossings. This behavior is explained using quasiclassical quantization rules that properly take into account the pseudospin of the quasiparticles. The pseudospin generates the Berry phase, which leads to a shift in energy quantization and results in a pseudo-Zeeman effect. The latter depends on the electric field, alternates in sign among the two valleys, and al…
A theoretical calculation is presented of current noise which is due charge fractionalization, in two interacting edge channels in the integer quantum Hall state at filling factor $ν=2$. Because of the capacitive coupling between the channels, a tunneling event, in which an electron is transferred from a biased source lead to one of the two channels, generates propagating plasma mode excitations which carry fractional charges on the other edge channel. When these excitations impinge on a quantum point contact, they induce low-frequency current fluctuations with no net average current. A pertur…
We study the electronic transmission through a graphene bilayer in the presence of an applied bias between layers. We consider different geometries involving interfaces between both a monolayer and a bilayer and between two bilayers. The applied bias opens a sizable gap in the spectrum inside the bilayer barrier region, thus leading to large changes in the transmission probability and electronic conductance that are controlled by the applied bias.
We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization and screening properties of bilayer graphene.
Biased bilayer graphene, with its easily tunable band gap, presents itself as the ideal system to explore the excitonic effect in graphene based systems. In this paper we study the excitonic optical response of such a system by combining a tight binding model with the solution of the Bethe-Salpeter equation, the latter being solved in a semi-analytical manner, requiring a single numerical quadrature, thus allowing for a transparent calculation. With our approach we start by analytically obtaining the optical selection rules, followed by the computation of the absorption spectrum for the case o…
Magnetic impurity adsorbed on one of the carbon planes of a bilayer graphene is studied. The formation of the many-body SU(2) and SU(4) resonances close to the bandgap is analyzed within the mean field Kotliar-Ruckenstein slave boson approach. Impact of enhanced hybridization and magnetic instability of bilayer doped near the Van Hove singularity on the screening of magnetic moment is discussed.
Using an atomistic spin model, we have simulated spin wave injection and propagation into antiferromagnetic IrMn from an exchange coupled CoFe layer. The spectral characteristics of the exited spin waves have a complex beating behavior arising from the non-collinear nature of the antiferromagnetic order. We find that the frequency response of the system depends strongly on the strength and frequency of oscillating field excitations. We also find that the strength of excited spin waves strongly decays away from the interfacial layer with a frequency dependent attenuation. Our findings suggest t…
A density-matrix formalism within the length gauge is developed to calculate the nonlinear response of both doped and undoped biased bilayer graphene (BBLG) at terahertz frequencies. Employing a tight-binding model, we derive an effective two-band Hamiltonian with which we calculate the conduction and valence band dispersion, as well as their respective Bloch states. We then solve for the dynamic equations of the density matrix elements, allowing for the calculation of the intraband and interband current densities and the transmitted and reflected terahertz fields. We find that for undoped BBL…
We study the problem of impurities and mid-gap states in a biased graphene bilayer. We show that the properties of the bound states, such as localization lengths and binding energies, can be controlled externally by an electric field effect. Moreover, the band gap is renormalized and impurity bands are created at finite impurity concentrations. Using the coherent potential approximation we calculate the electronic density of states and its dependence on the applied bias voltage.
We have studied the temperature effect on collective excitations in biased bilayer graphene within random-phase approximation. From the zeros of temperature dynamical dielectric function of the system we have found one weakly damped plasmon mode. For a given electrostatic potential bias, at low (high) temperature T the plasmon frequency changes slightly (increases remarkably) with T. We have also studied the effects of potential bias and carrier density on the plasmon frequency of the system at finite temperatures.
We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real bias…
We investigate the effect that the intrinsic spin-orbit and the inter- and intra-layer Rashba interactions have on the energy spectrum of either an unbiased or a biased graphene bilayer. We find that under certain conditions, a Dirac cone is formed out of a parabolic band and that it is possible to create a "Mexican hat"-like energy dispersion in an unbiased bilayer. In addition, in the presence of only an intralayer Rashba interaction, the K (K') point splits into four distinct ones, contrarily to the case in single-layer graphene, where the splitting also takes place, but the low-energy disp…
Understanding the dynamics of excitons in two dimensional semiconductors requires a theory that incorporates the essential physics distinct from their three-dimensional counterparts. In addition to the modified dielectric environment, single-particle states with strongly non-parabolic dispersion appear in many two-dimensional band structures, so that "effective mass" is ill-defined. Focusing on electrostatically-biased bilayer graphene as an example where quartic (and higher) dispersion terms are necessary, we present a semi-analytic theory used to investigate the properties of ground and exci…
An odd number of gapless Dirac fermions is guaranteed to exist at a surface of a strong topological insulator. We show that in a thin-film geometry and under external bias, electron-hole pairs that reside in these surface states can condense to form a coherent exciton condensate, similar in general terms to the exciton condensate recently argued to exist in a biased graphene bilayer, but with different topological properties. Such a `topological' exciton condensate (TEC) exhibits a host of unusual properties; the most interesting among them is the fractional charge +-e/2 carried by a singly qu…
We obtain analytical expressions for the eigenstates and the Landau level spectrum of biased graphene bilayers in a magnetic field. The calculations are performed in the context of a four-band continuum model and generalize previous approximate results. Solutions are presented for the spectrum as a function of interlayer coupling, the potential difference between the layers and the magnetic field. The explicit expressions allow us to calculate the oscillator strength and the selection rules for electric dipole transitions between the Landau states. Some transitions are significantly shifted in…
We study the localized magnetic states of impurity in biased bilayer and trilayer graphene. It is found that the magnetic boundary for bilayer and trilayer graphene presents the mixing features of Dirac and conventional fermion. For zero gate bias, as the impurity energy approaches the Dirac point, the impurity magnetization region diminishes for bilayer and trilayer graphene. When a gate bias is applied, the dependence of impurity magnetic states on the impurity energy exhibits a different behavior for bilayer and trilayer graphene due to the opening of a gap between the valence and the condu…
We study the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between two contact magnetic impurities placed on bilayer graphene (BLG). We compute the interaction mediated by the carriers of the pristine and biased BLG as well as the conduction electrons of the doped system. The results are obtained from the linear-response expression for the susceptibility written in terms of the integral over lattice Green's functions. For the unbiased system, we obtain some analytical expressions in terms of the Meijer G-functions, which consist of the product of two oscillatory terms, one coming from the i…
We have investigated the Coulomb screening properties and plasmon spectrum in a bilayer graphene under a perpendicular electric bias. The bias voltage applied between the two graphene layers opens a gap in the single particle energy spectrum and modifies the many-body correlations and collective excitations. The energy gap can soften the plasmon modes and lead to a crossover of the plasmons from a Landau damped mode to being undamped. Plasmon modes of long lifetime may be observable in experiments and may have potentials for device applications.
In this work, we investigate the intrinsic limits of subthreshold slope in a dual gated bilayer graphene transistor using a coupled self-consistent Poisson-bandstructure solver. We benchmark the solver by matching the bias dependent bandgap results obtained from the solver against published experimental data. We show that the intrinsic bias dependence of the electronic structure and the self-consistent electrostatics limit the subthreshold slope obtained in such a transistor well above the Boltzmann limit of 60mV/decade at room temperature, but much below the results experimentally shown till …
We investigate here how the current flows over a bilayer graphene in the presence of an external electric field perpendicularly applied (biased bilayer). Charge density polarization between layers in these systems is known to create a layer pseudospin, which can be manipulated by the electric field. Our results show that current does not necessarily flow over regions of the system with higher charge density. Charge can be predominantly concentrated over one layer, while current flows over the other layer. We find that this phenomenon occurs when the charge density becomes highly concentrated o…
Achieving a population imbalance between the two inequivalent valleys is a critical first step for any valleytronic device. A valley-polarization can be induced in biased bilayer graphene using circularly polarized light. In this paper, we present a detailed theoretical study of valley-polarization in biased bilayer graphene. We show that a nearly perfect valley-polarization can be achieved with the proper choices of external bias and pulse frequency. We find that the optimal pulse frequency $ω$ is given by $\hbarω=2a,$ where $2a$ is the potential energy difference between the graphene layers.…
Plasma oscillations in doped graphene bilayer at zero temperature has been investigated. Bias voltage effect on the dispersion curve for plasmon in bigraphene has been studied in random phase approximation. The possibility of controlling of curvature of dispersion curve for plasmon by changing of bias voltage has been shown. The dependence of this curvature on the bias voltage has been predicted to have the nonmonotonous character. Namely the existence of breaking point for such dependence has been found out. The bias voltage corresponding to the breaking point is shown to increase with free c…
The large lattice constant of Moire superlattice formed in twisted bilayer graphene for small twist enables observing the Landau levels splitting into Hofstadter butterflies in energy spectra for moderate magnetic field. This is expected for generic system under homogeneous bias conditions but its robustness against spatial potential fluctuations is left open question. We study the energy structure of twisted bilayer system in dependence of both, the homogeneous magnetic field and the bias voltage applied exclusively in its central part. Although the translational symmetry is broken, the energ…
We investigate zero-temperature plasmon modes in a double-layer bilayer graphene structure under a perpendicular electrostatic bias. The numerical results demonstrate that there exist two collective modes which are undamped in the long wavelength limit. The finite potential bias decreases remarkably the plasmon energy in a wide range of wave-vector and makes plasmon branches become Landau damped at a higher wave-vector as compared to unbiased case. We find that the dependence of plasmon dispersions on the system parameters such as the inter-layer separation and carrier density is similar in tw…
We investigate the charge carrier dynamics in bilayer graphene subject to monochromatic laser irradiation within the Landau level quantization regime. Even though the radiation field does not lift the energy degeneracy of the lowest Landau levels (LLs), it nevertheless has a strong effect on the photoinduced pseudospin polarization response for higher LLs ($n\ge2$). Our results show that the photoinduced bandgaps lead to a finite response of the averaged pseudospin polarization with nontrivial oscillating behavior. It is shown that the contribution from these higher LL transitions turns out to…
We compute the phase diagram of a biased graphene bilayer. The existence of a ferromagnetic phase is discussed with respect both to carrier density and temperature. We find that the ferromagnetic transition is first order, lowering the value of $U$ relatively to the usual Stoner criterion. We show that in the ferromagnetic phase the two planes have unequal magnetization and that the electronic density is hole like in one plane and electron like in the other.
Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can be directly linked to quantum transport simulations. This is a promising route towards more complete experimental investigation of valleytronic phenomena in graphene, but a major obstacle is the difficulty in applying the sublattice-dependent potentials required. Here we show that strongly valley-dependent scattering also emerges from bilayer graphene quantum…
We theoretically study the electronic structure of small-angle twisted bilayer graphene with a large potential asymmetry between the top and bottom layers. We show that the emergent helical states known to appear on the triangular AB-BA domain boundary do not actually form a percolating network, but instead they provide independent, perfect one-dimensional channels propagating in three different directions. Using the continuum-model Hamiltonian, we demonstrate that an applied bias causes two well-defined energy windows which contain sparsely distributed one-dimensional channels. The origin of …
Biased bilayer graphene (BBG) is a variable band gap semiconductor, with a strongly field-dependent band gap of up to $300 \, \text{meV}$, making it of particular interest for graphene-based nano-electronic and -photonic devices. The optical properties of BBG are dominated by strongly bound excitons. We perform ab initio density-functional-theory+Bethe-Salpeter-equation modelling of excitons in BBG and calculate the exciton band structures and optical matrix elements for field strengths in the range $30-300 \, \text{mV}/{\unicode{x212B}}$. The exciton properties prove to have a strong field de…
The phase diagram of a biased graphene bilayer is computed and the existence of a ferromagnetic phase is discussed both in the critical on-site interaction $U_{c}$ versus doping density and versus temperature. We show that in the ferromagnetic phase the two planes have unequal magnetization and that the electronic density is hole like in one plane and electron like in the other. We give evidence for a \emph{first-order} phase transition between paramagnetic and ferromagnetic phases induced by doping at zero temperature.
Intrinsic bilayer graphene is a gapless semimetal. Under the application of a bias field it becomes a semiconductor with a direct band gap that is proportional to the applied field. Under a layer-asymmetric strain (where the upper layer undergoes compression and lower layer tension or visa-versa) we find that the band gap of a biased bilayer graphene ribbon becomes indirect and, for higher strains, becomes negative returning the material its original semimetal state. As a result, the conductivity of the ribbon increases and can be almost an order of magnitude larger that of the intrinsic unbia…
The important experimental advances in graphene fabrication and its peculiar transport properties motivated researchers to utilize graphene as a potential basis for the next generation of fast and smart electronic devices. In this article, we investigate the influence of a potential substrate on the transport properties of a biased AA-stacked n-p-n bilayer graphene junction (AA-BLG). Using the Dirac Hamiltonian with the transfer matrix approach we obtain the transmission probabilities and thus the respective conductance. In the presence of the induced mass-term, the energy spectrum and the int…
We study magnetism of an adatom adsorbed on AA-stacked bilayer graphene (BLG) in both unbiased and biased cases, using the Anderson impurity model. We find different magnetic phase diagrams for the adatom, depending on the energy level of the adatom, which varies from the magnetic phase diagram of adatom in normal metals to that in graphene. This is due to the individual energy dependence of the density of states (DOS) of AA-stacked BLG and anomalous broadening of the adatom energy level. Furthermore we investigate the effect of a bias voltage on DOS of AA-stacked and show that the magnetizati…
We formulate a theory of transport in graphene bilayers in the weak momentum scattering regime in such a way as to take into account contributions to the electrical conductivity to leading and next-to-leading order in the scattering potential. The response of bilayers to an electric field cannot be regarded as a sum of terms due to individual layers. Rather, interlayer tunneling and coherence between positive- and negative-energy states give the main contributions to the conductivity. At low energies, the dominant effect of scattering on transport comes from scattering within each energy band,…
Bilayers of graphitic materials have potential applications in field effect transistors (FETs). A potential difference applied between certain ionic bilayers made from insulating graphitic materials such as BN, ZnO and AlN could reduce gap sizes, turning them into useful semiconductors. On the other hand, opening of a small semiconducting gap occurs in graphene bilayers under applied field. The aim here is to investigate to what extent substrate induced electron-phonon interactions (EPIs) modify this gap change. We examine EPIs in several lattice configurations, using a perturbative approach. …
We address the optical conductivity of undoped bilayer graphene in the presence of a finite bias voltage at finite temperature. The effects of gap parameter and stacking type on optical conductivity are discussed in the context of tight binding model Hamiltonian. Green's function approach has been implemented to find the behavior of optical conductivity of bilayer graphene within linear response theory. We have found the frequency dependence of optical conductivity for different values of gap parameter and bias voltage. Also the dependence of optical conductivity on the temperature has been in…
Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible state to a compressible state by tuning the bandgap at a given electron density. Likewise, variation of the density with a fixed bandgap results in a transition from the FQHE states at lower Landau levels to compressible states at intermediate Landau levels and finally to FQHE states at higher Landau levels. This intriguing scenario of tunable phase transitions in the fractional quantum Hall states is unique to bilayer graphene and never before existed in convent…
We study exchange interaction in zigzag bilayer phosphorene nanoribbons (ZBLPNRs) under a perpendicular electric field. We evaluate the spatial and electric field dependency of static spin susceptibility in real space in various configurations of magnetic impurities at zero temperature. The electronic properties of ZBLPNR in the presence of a gate voltage is also obtained. In comparison to the other two-dimensional (2D) materials such as graphene and silicene, ZBLPNR has two nearly degenerated quasiflat edge modes at the Fermi level, isolated from the bulk states. The band gap modulation of ZB…
We numerically study the quantum Hall effect in biased bilayer graphene based on a tight-binding model in the presence of disorder. Integer quantum Hall plateaus with quantized conductivity $σ_{xy}=νe^2/h$ (where $ν$ is any integer) are observed around the band center due to the split of the valley degeneracy by an opposite voltage bias added to the two layers. The central ($n=0$) Dirac Landau level is also split, which leads to a pronounced $ν=0$ plateau. This is consistent with the opening of a sizable gap between the valence and conduction bands. The exact spectrum in an open system further…
A valley-contrasting Berry curvature in bilayer transition metal dichalcogenides with spin-orbit coupling can generate valley magnetization when the inversion symmetry is broken, for example, by an electric field, regardless of time-reversal symmetry. A nontrivial Berry curvature can also lead to anomalous transport responses, such as the anomalous Hall effect and the anomalous Nernst effect. Applied to a bilayer WSe$_2$, an electric field can tune the Berry curvature and orbital magnetic moment, which has important consequences for the orbital magnetization and the anomalous Nernst responses.…
We consider suspened bilayer graphene under applied perpendicular electric bias field that is known to generate a single particle gap $2Δ$ and a related electric polarization ${\cal P}$. We argue that the bias also drives a quantum phase transition from band insulator to superfluid exciton condensate. The transition occurs when the exciton binding energy exceeds the band gap $2Δ$. We predict the critical bias (converted to band gap), $Δ_c\approx 60$ meV, below which the excitons condense. The critical temperature, $T_c(Δ)$, is maximum at $Δ\approx 25$ meV, $T_c^\text{max}\approx 115$ K, decrea…
Electronic properties of bilayer graphene are distinct from both the conventional two dimensional electron gas and monolayer graphene due to its particular chiral properties and excitation charge carrier dispersions. We study the effect of strain on the electronic structure, the edge-states and charge transport of bilayer graphene nanoribbon at zero-temperature. We demonstrate a valley polarized quantum Hall effect in biased bilayer graphene when the system is subjected to a perpendicular magnetic field. In this system a topological phase transition from a quantum valley Hall to a valley polar…
Weak-coupling theory of half-metals and other fractional metallic phases in biased doped Bernal bilayer graphene
Abrikosov Center for Theoretical Physics, MIPT（阿布里科索夫理论物理中心，莫斯科物理技术学院）；Institute for Theoretical and Applied Electrodynamics, Russian Academy of Sciences（俄罗斯科学院理论与应用电动力学研究所）
Magnetic state of exchanged biased CoO(20nm)/Co($d_F$) bilayer ($d_F$=5-20nm) was studied by means of polarized neutron reflectometry. By spacing of CoO/Co bilayer and Al$_2$O$_3$ substrate with Nb(20nm) layer we created waveguide structure which allowed us to significantly enhance intensity of spin-flip (SF) scattering in the position of optical resonances. For the trained sample with thinnest Co(5nm) we detected strong SF scattering at the resonance position (up to 30\% of incoming intensity) speaking about high non-collinearity of the system. As $d_F$ increases, the intensity of SF scatteri…
We study the conductance of a biased bilayer graphene flake with monolayer nanoribbon contacts. We find that the transmission through the bilayer ribbon strongly depends on the applied bias between the two layers and on the relative position of the monolayer contacts. Besides the opening of an energy gap on the bilayer, the bias allows to tune the electronic density on the bilayer flake, making possible the control of the electronic transmission by an external parameter.
