Electronic properties of bilayer graphene are distinct from both the conventional two dimensional electron gas and monolayer graphene due to its particular chiral properties and excitation charge carrier dispersions. We study the effect of strain on the electronic structure, the edge-states and charge transport of bilayer graphene nanoribbon at zero-temperature. We demonstrate a valley polarized quantum Hall effect in biased bilayer graphene when the system is subjected to a perpendicular magnetic field. In this system a topological phase transition from a quantum valley Hall to a valley polarized quantum Hall phase can occur by tuning the interplanar strain. Furthermore, we study the layer-resolved transport properties by calculating the layer polarized quantity by using the recursive Green's function technique and show that the resulting layer polarized value confirms the obtained phases. These predictions can be verified by experiments and our results demonstrate the possibility for exploiting strained bilayer graphene in the presence of external fields for electronics and valleytronics devices.
We theoretically show that an interlayer bias voltage in the AB-stacked bilayer graphene nanoribbons with armchair edges induces an electric polarization along the ribbon. Both tight-binding and ab initio calculations consistently indicate that when the bias voltage is weak, the polarization shows opposite signs depending on the ribbon width modulo three. This nontrivial dependence is explained using a two-band effective model. A strong limit of the bias voltage in the tight-binding model shows either one-third or zero polarization, which agrees with topological argument.
We study analytically, based on the tight-binding model, the electronic band structure of armchair AA-stacked bilayer graphene nanoribbons (BLGNRs) in several regimes. We apply hard-wall boundary conditions to determine the discretion dominating on the Bloch wavefunctions in the confined direction. First we consider an ideal case, perfect nanoribbons without any edge deformation, and show that their electronic properties are strongly size-dependent. We find that the narrow armchair AA-stacked BLGNRs (similar to single-layer graphene nanoribbons) may be metallic or semiconducting depending on t…
We study in this paper the edge polarizations and their consequences for a biased Bernal stacked bilayer graphene nanoribbon with zigzag termination. The magnetic states are classified according to the interlayer and intralayer couplings between the edge polarizations, and the magnetic phase diagram of doping versus bias voltage is given. Coplanar magnetic phase is found and the variation of its magnetic structure with the bias voltage is investigated. For all the magnetic states, we also discuss the possibility of the half-metallicity, and for a ribbon with perfect zigzag edges we predict sev…
Zigzag nanoribbons of monolayer graphene-like two-dimensional materials host spontaneous edge magnetism at the zigzag terminations, whose configuration controls the band gap. In this article, the edge magnetism of zigzag nanoribbons of bilayer hexagonal crystals are studied. The specific models of bilayer graphene and bilayer silicene are both studied. As the gated voltage increases, the total energy level, magnetic structure and band structures of the ground state and the first quasi-stable excited state are tuned. For certain region of the gated voltage, the band gaps of spin up and down are…
We reveal that there exists a class of graphene structures (a sub-class of bilayer graphene nanoribbons) which has unusually strong optical response in the terahertz (THz) and far infrared (FIR) regime. The peak conductance of terahertz/FIR active bilayer ribbons is around two orders of magnitude higher than the universal conductance of $e^2/4\hbar$ observed in graphene sheets. The criterion for the terahertz/FIR active sub-class is a bilayer graphene nanoribbon with one-dimensional massless Dirac Fermion energy dispersion near the $Γ$ point. Our results overcome a significant obstacle that hi…
We study the transport properties of a twisted bilayer graphene flake contacted by two monolayer nanoribbons which act as leads. We analyze the conductance in terms of the spectra of the bilayer nanoribbon and the monolayer contacts. The low-energy transport properties are governed by the edge states with AB stacking. Remarkably, the electronic conductance in this energy region does not depend much on the relative position of the leads, in contrast with that of bilayer flakes with more symmetric stackings. We attribute this feature to the localization of these low-energy states in the AB edge …
We investigated the emergence of spin spiral ground state induced by the electric field in the bilayer zigzag graphene nanoribbons for the ferromagnetic edge states. To do that, we employed the generalized Bloch theorem to create flat spiral alignments for all the magnetic moments of carbon atoms at the edges within a constraint scheme approach. While the small ribbon width can preserve the ferromagnetic ground state, the large one shows the spiral ground state starting from a certain value of the electric field. We also pointed out that the spiral ground state is caused by the reduction of sp…
We study the interaction energy between two graphene nanoribbons by first principles calculations, including van der Waals interactions and spin polarization. For ultranarrow zigzag nanoribbons, the direct stacking is even more stable than Bernal, competing in energy for wider ribbons. This behavior is due to the magnetic interaction between edge states. We relate the reduction of the magnetization in zigzag nanoribbons with increasing ribbon width to the structural changes produced by the magnetic interaction, and show that when deposited on a substrate, zigzag bilayer ribbons remain magnetic…
We present an analytical description of pi electrons of a finite size bilayer graphene within a framework of the tight-binding model. The bilayered structures considered here are characterized by a rectangular geometry and have a finite size in one or both directions with armchair- and zigzag-shaped edges. We provide an exact analytical description of the spectrum of pi electrons in the zigzag and armchair bilayer graphene nanoribbons and nanotubes. We analyze the dispersion relations, the density of states, and the conductance quantization.
In this work the tight binding model calculations are carried out for AA-Bilayer Graphene nanoribbons as an example of bilayer systems. The effects of edges, NNN hopping, and impurities of a single layer are introduced numerically as a change in the elements of the relevant block diagonal matrix appearing in the direct diagonalization method. The direct interlayer hopping between the top and the bottom single layers is constructed in the generalized direct diagonalization method by the off-diagonal block matrices in which the strength of the interlayer hopping is included.
We theoretically investigate the thermoelectric properties of zigzag bilayer phosphorene nanoribbons (ZBPNR). We first, draw an analogy between the extended Su-Schrieffer-Heeger (SSH) ladder and ZBPNR edge states and obtain their corresponding band structure and wave functions analytically. Then, by applying the energy filtering method, we show that the electric power and thermoelectric efficiency of the ZBPNRs can be improved remarkably in the presence of mid-gap edge states. We also argue how to engineer the edge modes to further optimize thermoelectric power and efficiency of the system by …
Stacking two-dimensional layered materials such as graphene and transitional metal dichalcogenides with nonzero interlayer twist angles has recently become attractive because of the emergence of novel physical properties. Stacking of one-dimensional nanomaterials offers the lateral stacking offset as an additional parameter for modulating the resulting material properties. Here, we report that the edge states of twisted bilayer zigzag graphene nanoribbons (TBZGNRs) can be tuned with both the twist angle and the stacking offset. Strong edge state variations in the stacking region are first reve…
The electronic properties of antimonene, single-layer Sb, are attracting great attention. In this paper, spin transport in armchair antimonene nanoribbon (ASbNR) is investigated. Following the tight-binding model, we calculate both the transmission probability and the conductance by means of the non-equilibrium Green's function (NEGF) method. The effects of an external electric field vertical to the ribbon plane are explored. Our results indicate that the spin-flip rate increases with the vertical electric field. Disorder effects on spin transport are addressed by considering the presence of c…
The magnetoelectronic properties of quasi-one-dimensional zigzag graphene nanoribbons are investigated by using the Peierls tight-binding model. Quasi-Landau levels (QLLs), dispersionless Landau subbands within a certain region of k-space, are resulted from the competition between magnetic and quantum confinement effects. In bilayer system, the interlayer interactions lead to two groups of QLLs, one occurring at the Fermi level and the other one occurring at higher energies. Transverse electric fields are able to distort energy spectrum, tilt two groups of QLLs and cause semiconductor-metal tr…
A topological insulator is a novel quantum state, characterized by symmetry-protected non-trivial edge/surface states. Our first-principle simulations show the significant effects of the chemical decoration on edge states of topological Bi(111) bilayer nanoribbon, which remove the trivial edge state and recover the Dirac linear dispersion of topological edge state. By comparing the edge states with and without chemical decoration, the Bi(111) bilayer nanoribbon offers a simple system for assessing conductance fluctuation of edge states. The chemical decoration can also modify the penetration d…
We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ~sim50 meV. This demonstrates the potential of bilayer graphene as FET channel material in a conventional CMOS environment.
On the basis of tight-binding lattice model, the edge states of monolayer and bilayer graphene nanoribbons (GNRs) with different edge terminations are studied. The effects of edge-hopping modulation, spin-orbital coupling (SOC), and bias voltage on bilayer GNRs are discussed. We observe the following: (i) Some new extra edge states can be created by edge-hopping modulation for monolayer GNRs. (ii) Intralayer Rashba SOC plays a role in depressing the band energy gap $E_g$ opened by intrinsic SOC for both monolayer and bilayer GNRs. An almost linear dependent relation, i.e., $E_g\sim λ_R$, is fo…
The effects of Coulomb interactions on the electronic properties of bilayer graphene nanoribbons (BGNs) covered by a gate electrode are studied theoretically. The electron density distribution and the potential profile are calculated self-consistently within the Hartree approximation. A comparison to their single-particle counterparts reveals the effects of interactions and screening. Due to the finite width of the nanoribbon in combination with electronic repulsion, the gate-induced electrons tend to accumulate along the BGN edges where the potential assumes a sharp triangular shape. This has…
We investigate the electron transport and thermoelectric property of twisted bilayer graphene nanoribbon junction (TBGNRJ) in $0^o$, $21.8^o$, $38.2^o$ and $60^o$ rotation angles by first principles calculation with Landauer-Buttiker and Boltzmann theories. It is found that TBGNRJs exhibit negative differential resistance (NDR) in $21.8^o$ and $38.2^o$ rotation angles under $\pm$ 0.2 V bias voltage. More importantly, three peak ZT values of 2.0, 2.7 and 6.1 can be achieved in the $21.8^o$ rotation angle at 300K. The outstanding ZT values of TBGNRJs are interpreted as the combination of the red…
Coherent spin-dependent transport through a junction containing of Normal/Ferromagnetic/Normal bilayer graphene nanoribbon with zigzag edges is investigated by using Landauer formalism. In a more realistic set-up, the exchange field is induced by two ferromagnetic insulator strips deposited on the ribbon edges while a perpendicular electric field is applied by the top gated electrodes. Our results show that, for antiparallel configuration, a band gap is opened giving rise a semiconducting behavior, while for parallel configuration, the band structure has no band gap. As a result, a giant magne…
We investigate the electronic transport properties of a bilayer graphene flake contacted by two monolayer nanoribbons. Such a finite-size bilayer flake can be built by overlapping two semiinfinite ribbons or by depositing a monolayer flake onto an infinite nanoribbon. These two structures have a complementary behavior, that we study and analyze by means of a tight-binding method and a continuum Dirac model. We have found that for certain energy ranges and geometries, the conductance of these systems oscillates markedly between zero and the maximum value of the conductance, allowing for the des…
We investigate the thermoelectric performance of armchair graphene nanoribbon (AGNR), bilayer GNRs junction (BGNRJ) and BGNRJ with holes (BGNRJ-H) by the first principles calculation with non-equilibrium Green function. It is found that the BGNRJ-H exhibits high ZT values of 9.65 and 5.55 at 300K. The reason of these significantly larger ZT values than previously observed has been calculated due to reduced thermal conductivity and enhanced electrical conductivity. The low thermal conductance comes from the van der waals (vdW) interaction between two graphene layers. The increased electrical co…
We study the effects of a vertical electric field on the electronic band structure and transport in multilayer phosphorene and its nanoribbons. In phosphorene, at a critical value of the vertical electric field ($E_c$), the band gap closes and the band structure undergoes a massive-to-massless Dirac fermion transition along the armchair direction. This transition is observable in quantum Hall measurements, as the power-law dependence of the Landau-level energy on the magnetic field $B$ goes from $\sim (n+1/2)B$ below $E_c$, to $\sim [(n+1/2)B]^{2/3}$ at $E_c$, to $\sim [(n+1/2)B]^{1/2}$ above …
We show that gated bilayer graphene zigzag ribbons possess a fast and a slow edge, characterized by edge state velocities that differ due to non-negligible next-nearest-neighbor hopping elements. By applying bosonization and renormalization group methods, we find that the slow edge can acquire a sizable interaction-induced gap, which is tunable via an external gate voltage V_{g}. In contrast to the gate-induced gap in the bulk, the interaction-induced gap depends non-monotonously on the on-site potential V.
Graphene features topological edge bands that connect the pair of Dirac points through either sectors of the 1D Brillouin zone depending on edge configurations (zigzag or bearded). Because of their flat dispersion, spontaneous edge magnetisation can arise from Coulomb interaction in graphene nanoribbons, which has caught remarkable interest. We find an anomalous Bloch oscillation in such edge bands, in which the flat dispersion freezes electron motion along the field direction, while the topological connection of the bands through the bulk leads to electron oscillation in the transverse direct…
Electronic structures of the zigzag bilayer graphite nanoribbons(Z-BGNR) with various ribbon width $N$ are studied within the tight binding approximation. Neglecting the inter-layer hopping amplitude $γ_4$, which is an order of magnitude smaller than the other inter-layer hopping parameters $γ_1$ and $γ_3$, there exist two fixed Fermi points $\pm k^*$ independent of the ribbon width with the peculiar energy dispersion near $k^*$ as $\ve (k) \sim \pm (k-k^*)^N$. By investigating the edge states of the Z-BGNR, we notice that the trigonal warping of the bilayer graphene sheets are reflected on in…
A theoretical study of the magnetoelectronic properties of zigzag and armchair bilayer graphene nanoribbons (BGNs) is presented. Using the recursive Green's function method, we study the band structure of BGNs in uniform perpendicular magnetic fields and discuss the zero-temperature conductance for the corresponding clean systems. The conductance quantized as 2(n+1)G_ for the zigzag edges and nG_0 for the armchair edges with G_{0}=2e^2/h being the conductance unit and $n$ an integer. Special attention is paid to the effects of edge disorder. As in the case of monolayer graphene nanoribbons (GN…
The Seebeck coefficient in single and bilayer graphene sheets has been observed to be modest due to the gapless characteristic of these structures. In this work, we demonstrate that this coefficient is significantly high in quasi-1D structures of bilayer armchair graphene nanoribbons (BL-AGNRs) thanks to the open gaps induced by the quantum confinement effect. We show that the Seebeck coefficient of BL-AGNRs is also classified into three groups 3p, 3p + 1, 3p + 2 as the energy gap. And for the semiconducting BL-AGNR of width of 12 dimer lines, the Seebeck coefficient is found as high as 707 uV…
Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by positioning a scanning tunnelling microscopy (STM) tip above a graphene nanoribbon that was deposited on a graphite surface. Because of the asymmetry of the two-barrier junction, the electrons can unidirectional transfer from the tip to the graphene nanoribbon but not from the graphene to the tip. This result opens intriguing opportunities for designing new…
Single-layer and bilayer carbon and hexagonal boron nitride nanoscrolls as well as nanoscrolls made of bilayer graphene/hexagonal boron nitride heterostructure are considered. Structures of stable states of the corresponding nanoscrolls prepared by rolling single-layer and bilayer rectangular nanoribbons are obtained based on the analytical model and numerical calculations. The lengths of nanoribbons for which stable and energetically favorable nanoscrolls are possible are determined. Barriers to rolling of single-layer and bilayer nanoribbons into nanoscrolls and barriers to nanoscroll unroll…
We study exchange interaction in zigzag bilayer phosphorene nanoribbons (ZBLPNRs) under a perpendicular electric field. We evaluate the spatial and electric field dependency of static spin susceptibility in real space in various configurations of magnetic impurities at zero temperature. The electronic properties of ZBLPNR in the presence of a gate voltage is also obtained. In comparison to the other two-dimensional (2D) materials such as graphene and silicene, ZBLPNR has two nearly degenerated quasiflat edge modes at the Fermi level, isolated from the bulk states. The band gap modulation of ZB…
The atomic structure, stacking sequences and electronic structure of folded graphene nanoribbons (FGNRs) are investigated by first-principles calculations. It reveals that the common configurations of all FGNRs are racket-like structures including a nanotube-like edge and two flat nanoribbons. Interestingly, the two flat nanoribbons can form new stacking styles instead of the most stable AB-stacking sequences for bilayer nanoribbons. The stability of the FGNRs are associated with several factors of initial structures, such as interlayer distance of two nanoribbons, stacking sequences, edge sty…
We study the effect of vertical electric-field (E-field) on the electronic properties of the multilayer armchair graphene nanoribbon (aGNR). Under E-field, the band structure of a bilayer aGNR undergoes interesting transformations such as change in the electron velocity, sign of the electron effective mass, band gap, the position of the band gap in the momentum space. Depending on the width of the aGNR and the applied E-field, the band gap of the aGNR may either be increased or decreased. When the applied E-field is above a critical value, the band gap of the bilayer aGNR is identical to that …
We show measurements on a bilayer graphene quantum dot with an integrated charge detector. The focus lies on enabling charge detection with a 30 nm wide bilayer graphene nanoribbon located approximately 35 nm next to a bilayer graphene quantum dot with an island diameter of about 100 nm. Local resonances in the nanoribbon can be successfully used to detect individual charging events in the dot even in regimes where the quantum dot Coulomb peaks cannot be measured by conventional techniques.
In the phenomenon of electromagnetically induced transparency1 (EIT) of a three-level atomic system, the linear susceptibility at the dipole-allowed transition is canceled through destructive interference of the direct transition and an indirect transition pathway involving a meta-stable level, enabled by optical pumping. EIT not only leads to light transmission at otherwise opaque atomic transition frequencies, but also results in the slowing of light group velocity and enhanced optical nonlinearity. In this letter, we report an analogous behavior, denoted as phonon-induced transparency (PIT)…
Thin adhesive films can be removed from substrates, torn, and folded in distinct geometries under external driving forces. In two-dimensional materials, however, these processes can be self-driven as shown in previous studies on folded twisted bilayer graphene nanoribbons produced by spontaneous tearing and peeling from a substrate. Here, we use atomic force microscopy techniques to generate and characterize the geometrical structure of naturally self-grown folded nanoribbon structures. Measurements of nanoribbon width and interlayer separation reveal similar twist-angle dependences possibly c…
In this chapter, semi-analytical models for the calculation of the quantum capacitance of both monolayer and bilayer graphene and its nanoribbons, are presented. Since electron-hole puddles are experimental facts in all graphene samples, they have been incorporated in our calculations. The temperature dependence of the quantum capacitance around the charge neutrality point is also investigated and the obtained results are in agreement with many features recently observed in quantum capacitance measurements on both monolayer and bilayer graphene devices. Furtheremore, the impact of finite-size …
The edge physics of graphene based systems is well known to be highly sensitive to the atomic structure at the boundary, with localized zero mode edge states found only on the zigzag type termination of the lattice. Here we demonstrate that the graphene twist bilayer supports an additional class of edge states, that (i) are found for all edge geometries and thus are robust against edge roughness, (ii) occur at energies coinciding with twist induced van Hove singularities in the bulk and (iii) possess an electron density strongly modulated by the moiré lattice. Interestingly, these "moiré edge …
For graphene to be utilized in the digital electronics industry the challenge is to create bandgaps of order 1eV as simply as possible. The most successful methods for the creation of gaps in graphene are (a) confining the electrons in nanoribbons, which is technically difficult or (b) placing a potential difference across bilayer graphene, which is limited to gaps of around 300meV for reasonably sized electric fields. Here we propose that electronic band gaps can be created without applying an external electric field, by using the electron-phonon interaction formed when bilayer graphene is sa…
We study the conductance of a biased bilayer graphene flake with monolayer nanoribbon contacts. We find that the transmission through the bilayer ribbon strongly depends on the applied bias between the two layers and on the relative position of the monolayer contacts. Besides the opening of an energy gap on the bilayer, the bias allows to tune the electronic density on the bilayer flake, making possible the control of the electronic transmission by an external parameter.
We study the effect of SiC substrate on thermal conductivity of epitaxial graphene nanoribbons (GNRs) using the nonequilibrium molecular dynamics method. We show that the substrate has strong interaction with single-layer GNRs during the thermal transport, which largely reduces the thermal conductivity. The thermal conductivity characteristics of suspended GNRs are well preserved in the second GNR layers of bilayer GNR, which has a weak van der Waals interaction with the underlying structures. The out-of-plane phonon mode is found to play a critical role on the thermal conductivity variation o…
In this work, we have designed and simulated new thermoelectric generator based on monolayer and few-layer MoS2 nanoribbons. The proposed thermoelectric generator is composed of thermocouples made of both n-type and p-type MoS2 nanoribbon legs. Density Functional Tight-Binding Non-Equilibrium Green's Function (DFTB-NEGF) method has been used to calculate the transmission spectrum of MoS2 armchair and zigzag nanoribbons. Phonon transmission spectrum are calculated based on parameterization of Stillinger-Weber potential. Thermoelectric figure of merit, ZT, is calculated using these electronic an…
In the presence of the Hubbard interaction, graphene zigzag nanoribbons have spontaneous edge magnetism with anti-parallel configuration, whose amplitude can be tuned by a transversal electric field. As the electric field increases or decreases across a critical value, the edges are demagnetized or re-magnetized, respectively. A magnetic field at each edge determines the orientation of the re-magnetization. Thus, a combination of slowly varying transversal electric field and magnetic field in monolayer graphene zigzag nanoribbon could drive the quantum system into a bistability loop. The same …
We investigate the effects of external electric fields on the electronic properties of bilayer armchair graphene nano-ribbons. Using atomistic simulations with Tight Binding calculations and the Non-equilibrium Green function formalism, we demonstrate that (i) in semi-metallic structures, vertical fields impact more effectively than transverse fields in terms of opening larger bandgap, showing a contrary phenomenon compared to that demonstrated in previous studies in bilayer zigzag graphene nano-ribbons; (ii) in some semiconducting structures, if transverse fields just show usual effects as in…
We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tapping-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphene nanoribbon (GNR). The conductance of the GNR at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to lateral confinement of charge carriers…
We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning the crystallographic orientation of the graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Under such conditions, negative differential conductance (NDC) can be achieved. Application of in-plane magnetic field leads to electrons acquiring additional momentum during the tunneling process, whic…
Using the Tight Binding (TB) parameters extracted from Density Functional Theory (DFT) and Recursive Green's Function method, it is shown that skewed-zigzag black phosphorous (phosphorene) nanoribbons obtain large and tuneable bandgap in response to vertical and transverse electric fields. Depending on the direction of the applied field the mid-gap states could possess the localized or metallic nature i.e. non-zero mid-gap density of states. Adjustability of the bandgap and optical dipole transition matrix elements are explained based on the symmetry of involved band edge states. This promises…
Bilayer silicene has richer physical properties than bilayer graphene due to its buckled structure together with its trigonal symmetric structure. The buckled structure arises from a large ionic radius of silicon, and the trigonal symmetry from a particular way of hopping between two silicenes. It is a topologically trivial insulator since it carries a trivial $\mathbb{Z}_{2}$ topological charge. Nevertheless, its physical properties are more akin to those of a topological insulator than those of a band insulator. Indeed, a bilayer silicene nanoribbon has edge modes which are almost gapless an…
We present an elaborate and systematic study of the conductance properties of a zigzag bilayer graphene nanoribbon modeled by a Kane-Mele (KM) Hamiltonian. The interplay of the Rashba and the intrinsic spin-orbit couplings with the edge states, electronic band structures, charge and spin transport are explored in details. We have analytically derived the conditions for the edge states for a bilayer KM nanoribbon and show how these modes decay for lattice sites inside the bulk. It is particularly interesting to note that for a finite-size ribbon an even number of zigzag ribbon hosts a finite en…
We perform a comprehensive first-principles study of the electronic properties of phosphorene nanoribbons, phosphorene nanotubes, multilayer phosphorene, and heterobilayers of phosphorene and two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayer. The tensile strain and electric-field effects on electronic properties of low-dimensional phosphorene nanostructures are also investigated. Our calculations show that zigzag phosphorene nanoribbons (z-PNRs) are metals, regardless of the ribbon width while armchair phosphorene nanoribbons (a-PNRs) are semiconductors with indirect bandga…
In the present study, a series of planar poly(p-phenylene) (PPP) oligomers with n phenyl rings (n = 1 - 20), designated as n-PP, are taken as finite-size models of the narrowest armchair graphene nanoribbons with hydrogen passivation. The singlet-triplet energy gap, vertical ionization potential, vertical electron affinity, fundamental gap, optical gap, and exciton binding energy of n-PP are calculated using Kohn-Sham density functional theory and time-dependent density functional theory with various exchange-correlation density functionals. The ground state of n-PP is shown to be singlet for …
Zigzag phosphorene nanoribbons are metallic owing to the edge states, whose energies are inside the gap and far from the bulk bands. We show that -- through electrical manipulation of edge states -- electron propagation can be restricted to one of the ribbon edges or, in case of bilayer phosphorene nanoribbons, to one of the layers. This finding implies that edge and layer can be regarded as tunable equivalents of the spin-one-half degree of freedom, i.e., the pseudospin. In both layer- and edge-pseudospin schemes, we propose and characterize a pseudospin field-effect transistor, which can gen…
It is usually assumed that tunneling current is fairly independent of temperature. By performing an atomistic transport simulation, we show, to the contrary, that the subthreshold tunneling current in a graphene nanoribbon (GNR) band-to-band tunneling transistor (TFET) should show significant and non-linear temperature dependence. Furthermore, the nature of this non-linearity changes as a function of source/drain doping and vertical electric field, indicating that such non-linearity, if properly understood, may provide important insights into the tunneling phenomena. Finally, by developing a p…
