原子力显微镜局部阳极氧化光刻制备石墨烯纳米颗粒
Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope
摘要：
我们利用原子力显微镜对单层、双层和多层石墨烯进行了局域阳极氧化（LAO）光刻。绝缘氧化区域的宽度系统地取决于石墨烯层的数量。在单层石墨烯中制造的800 nm宽的条形器件表现出半整数量子霍尔效应。我们还制备了55 nm宽的石墨烯纳米颗粒（GNR）。GNR在电中性点处的电导在低温下被抑制，这表明由于载流子的横向限制而导致能隙的打开。这些结果表明，LAO光刻是一种有效的石墨烯纳米器件的制造技术。
英文摘要：
We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tapping-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphene nanoribbon (GNR). The conductance of the GNR at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to lateral confinement of charge carriers. These results show that LAO lithography is an effective technique for the fabrication of graphene nanodevices.
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