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arXiv 1003.0592cond-mat.supr-con
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压力对LaOFeP电子结构的影响

Effects of Pressure on the Electronic Structures of LaOFeP

Yong Yang, Xiao Hu

摘要:

采用第一性原理计算研究了LaOFeP在外加压力下的电子结构。费米能级上的电子态密度随着压力的增加而不断降低。费米面的电子分支对压力的变化具有很强的鲁棒性,而空穴分支则发生了显著的变化。两个孔面收缩成小的椭球状表面并最终消失,此时所施加的压力约为74.7GPa。压力响应可以通过费米能级附近的能带结构来理解。对比研究表明,空穴表面的消失主要是由于FeP层沿晶胞c轴的压缩。

英文摘要:

We studied the electronic structures of LaOFeP under applied pressure using first-principles calculations. The electronic density of states at the Fermi level decreases continuously with increasing pressure. The electron branches of Fermi surfaces are rather robust to pressure, while the hole branches change significantly. Two hole surfaces shrink into small ellipsoid-like surfaces and disappear finally, at which the applied pressure is ~ 74.7 GPa. The pressure response can be understood by the band structures around the Fermi level. Comparative studies reveal that the disappearance of hole surfaces is mainly due to the compression of the FeP layer along the c-axis of unit cell.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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