Interplay of the electronic and lattice degrees of freedom in A_{1-x}Fe_{2-y}Se_{2} superconductors under pressure
M. Bendele, C. Marini, B. Joseph, G. M. Pierantozzi, A. S. Caporale, E. Pomjakushina, K. Conder, A. Krzton-Maziopa, T. Irifune, T. Shinmei, S. Pascarelli, A. Bi… 展开作者
M. Bendele, C. Marini, B. Joseph, G. M. Pierantozzi, A. S. Caporale, E. Pomjakushina, K. Conder, A. Krzton-Maziopa, T. Irifune, T. Shinmei, S. Pascarelli, A. Bianconi, P. Dore, N. L. Saini, P. Postorino
本文用位置选择极化X射线吸收谱研究了Rb $_{1-x}$ Fe $_{2-y}$ Se $_2$的K边局域结构和电子性质随压力的变化。分散几何形状和新型纳米金刚石砧压力单元的组合允许揭示在$p\simeq11$ GPa下Fe-Se键距的阶梯状减小。Fe K边预峰的位置与化学势的位置直接相关，在$\sim6$ GPa之前几乎保持不变，然后增加，直到$p\simeq 11$ GPa。在这里，如在局部结构中一样，可以看到化学势的阶梯状减小。因此，目前的结果提供了令人信服的证据，在$A_{1-x}$ Fe $_{2-y}$ Se $_2$在量子临界转变附近的重新出现的超导电性的起源主要是由电子结构的变化引起的。
英文摘要：
The local structure and electronic properties of Rb$_{1-x}$Fe$_{2-y}$Se$_2$ are investigated by means of site selective polarized x-ray absorption spectroscopy at the iron and selenium K-edges as a function of pressure. A combination of dispersive geometry and novel nanodiamond anvil pressure-cell has permitted to reveal a step-like decrease in the Fe-Se bond distance at $p\simeq11$ GPa. The position of the Fe K-edge pre-peak, which is directly related to the position of the chemical potential, remains nearly constant until $\sim6$ GPa, followed by an increase until $p\simeq 11$ GPa. Here, as in the local structure, a step-like decrease of the chemical potential is seen. Thus, the present results provide compelling evidence that the origin of the reemerging superconductivity in $A_{1-x}$Fe$_{2-y}$Se$_2$ in vicinity of a quantum critical transition is caused mainly by the changes in the electronic structure.
Nanoscale interplay of strain and doping in a high-temperature superconductor
最高温度的超导体在纳米尺度上是电子不均匀的，这表明存在一个局部变量，可以利用它来增强超导配对。本文报道了铜氧化物超导体Bi $_2$ Sr $_2$ CaCu $_2$ O $_{8+x}$中局域掺杂与局域应变之间的关系。我们使用扫描隧道显微镜发现，关键的氧掺杂剂是周期性分布的，与局部应变。我们的所有氧掺杂剂的单位细胞内的位置的皮尺度调查提供了一个完整的微观理论的基本结构输入。
Interplay between topological insulators and superconductors
拓扑绝缘体在本体上是绝缘的，但具有受时间反演对称性保护的金属表面态。在这里，我们报告了详细的电子输运研究高品质的Bi 2 Se 3拓扑绝缘体薄膜接触超导（In，Al和W）电极。当电极变为超导时，薄膜的电阻显示出突然的和显著的上升。反过来，Bi2Se3膜强烈削弱了电极的超导性，显著降低了它们的转变温度和临界场。这些结果的一个可能的解释是，超导电极访问的表面状态和实验结果之间的相互作用的结果库珀对的电极和表面状态的自旋极化电流在Bi 2 Se 3。
Interplay of Valley, Orbital, Spin, and Layer Degrees of Freedom in Ta$_2$CS$_2$ MXene
Indian Association for the Cultivation of Science（印度科学文化协会）；Indian Institute of Technology Bombay（孟买印度理工学院）；Indian Institute of Technology Guwahati（古瓦哈提印度理工学院）
Interplay between lattice, orbital, and magnetic degrees of freedom in the chain-polymer Cu(II) breathing crystals
用X射线衍射和从头算能带结构计算研究了链状高分子Cu（II）呼吸晶体C21 H 19 CuF 12 N4 O 6。我们发现，在T=146 K的晶体结构的修改，与自旋交叉过渡，诱导的轨道顺序的变化，在一半的Cu网站。这反过来又导致磁相互作用符号的切换，根据轨道和自旋自由度之间的耦合的古登努-金盛-安德森理论。
Interplay between Symmetric Exchange Anisotropy, Uniform Dzyaloshinskii-Moriya Interaction and Magnetic Fields in the Phase Diagram of Quantum Magnets and Superconductors
Interplay of Spin and Lattice Degrees of Freedom in the Frustrated Antiferromagnet CdCr_2O_4: High-field and Temperature Induced Anomalies of the Elastic Constants
