The effect of impurities which induce local interlayer tunneling in bilayer exciton condensates is discussed. We show that a localized single fermion bound state emerges inside the gap for any strength of impurity scattering and calculate the dependence of the impurity state energy and wave function on the potential strength. We show that such an impurity induced single fermion state enhances the interlayer coherence around it, and is similar to the superconducting proximity effect. As a direct consequence of these single impurity states, we predict that a finite concentration of such impurities will increase the critical temperature for exciton condensation.
We study the problem of non-magnetic impurities adsorbed on bilayer graphene in the diluted regime. We analyze the impurity spectral densities for various concentrations and gate fields. We also analyze the effect of the adsorbate on the local density of states (LDOS) of the different C atoms in the structure and present some evidence of strong localization for the electronic states with energies close to the Dirac point.
We propose a novel heterostructure to achieve chiral topological superconductivity in 2D. A substrate with a large Rashba spin-orbit coupling energy is brought in proximity to a twisted bilayer of thin films exfoliated from a high-temperature cuprate superconductor. The combined system is then exposed to an out-of-plane magnetic field. The rare $d + id$ pairing symmetry expected to occur in such a system allows for nontrivial topology; specifically, in contrast to the case of the twisted bilayer in isolation, the substrate induces an odd Chern number. The resulting phase is characterized by th…
We consider a double-layer system made of two parallel bilayer graphene sheets separated by a dielectric medium. We calculate the finite-temperature electrical conductivity of the first layer due to charged impurities located in two layers. We study the effects of temperature, interlayer distance, dielectric constants and impurity concentration, carrier concentration on the electrical conductivity. We show the importance of charged impurities located in layer II in determining electrical conductivity of the first layer for small interlayer distance. The results in this paper give us more under…
Triple point fermions are elusive electronic excitations that generalize Dirac and Weyl modes beyond the conventional high energy paradigm. Yet, finding real materials naturally hosting these excitations at the Fermi energy has remained challenging. Here we show that twisted bilayer graphene is a versatile platform to realize robust triple point fermions in two dimensions. In particular, we establish that the introduction of localized impurities lifts one of the two degenerate Dirac cones, yielding triple point fermions at charge neutrality. Furthermore, we show that the valley polarization is…
Prediction of new superconducting bilayers heterostructures using quantum confinement and proximity effects
Politecnico di Torino（都灵理工大学）；National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)（国立核研究大学莫斯科工程物理学院）；University of Milan（米兰大学）；University of Göttingen（哥廷根大学）
In this work the effects of impurity in various insulating phases of the twisted bilayer graphene (TBG) are studied. The well-accepted continuum model\cite{b} is employed and the local density of states (DOS) is calculated. It is found that insulating phases breaking different symmetries proposed in previous theories\cite{pa,op1,Lee_2019} are distinguishable via the number and properties of in-gap bound state peaks induced by impurities in local DOS. Insulating phases breaking the same previously proposed symmetries can be further classified by the remaining anti-unitary symmetries and disting…
研究了低温超高真空下沉积钾时，杂质散射对双层石墨烯（BLG）中载流子输运的影响。带电杂质散射产生的电导率在载流子密度上呈超线性，在2-4 x 10^12 cm^-2的载流子密度测量范围内，其大小与单层石墨烯相似。在添加浓度为n_imp的带电杂质时，最小电导率Sigma_min与n_imp^-1/2成比例地降低，而电子和空穴熔池载流子密度与n_imp ^1/2成比例地增加。这些结果的有意沉积钾的BLG与带电杂质散射的理论预测吻合得很好。然而，我们的研究结果也表明，带电杂质散射单独不能解释所观察到的原始BLG钾掺杂前的SiO2上的输运性质。
Proximity orbital and spin-orbit effects of bilayer graphene on monolayer WSe$_2$ are investigated from first-principles. We find that the built-in electric field induces an orbital band gap of about 10 meV in bilayer graphene. Remarkably, the proximity spin-orbit splitting for holes is two orders of magnitude---the spin-orbit splitting of the valence band at K is about 2 meV---more than for electrons. Effectively, holes experience spin-valley locking due to the strong proximity of the lower graphene layer to WSe$_2$. However, applying an external transverse electric field of some 1 V/nm, coun…
Current-induced spin-orbit torques in Co$_2$FeAl/Pt ultrathin bilayers are studied using a magnetoresistive harmonic response technique, which distinguishes the dampinglike and fieldlike contributions. The presence of a temperature-dependent magnetic proximity effect is observed through the anomalous Hall and anisotropic magnetoresistances, which are enhanced at low temperatures for thin platinum thicknesses. The fieldlike torque efficiency decreases steadily as the temperature is lowered for all Pt thicknesses studied, which we propose is related to the influence of the magnetic proximity eff…
We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and temperature, both long-ranged Coulomb scattering and short-ranged defect scattering within a Boltzmann theory relaxation time approach. For experimentally relevant disorder, impurity scattering contributes a resistivity comparable to (much larger than) the phonon scattering contribution at high (low) temperatures. Decreasing twist angle leads to larger resi…
We study the band structure of phases induced by depositing bilayer graphene on a transition metal dichalcogenide monolayer. Tight-binding and low-energy effective Hamiltonian calculations show that it is possible to induce topologically nontrivial phases that should exhibit spin Hall effect in these systems. We classify bulk insulating phases through calculation of the Z$_2$ invariant, which unequivocally identifies the topology of the structure. The study of these and similar hybrid systems under applied gate voltage opens the possibility for tunable topological structures in real experiment…
Ferromagnetic resonance (FMR) in exchange-coupled ferromagnet-antiferromagnet (FM/AFM) bilayers commonly shows a moderate increase in the resonance frequency owing to the induced unidirectional anisotropy. Here we report a large FMR frequency enhancement toward the sub-THz range observed in Py/FeMn with ultrathin AFM FeMn. The effect is connected with a sizable induced magnetic moment in FeMn caused by the magnetic proximity effect from the Py layer. The observed FMR properties are explained as due to the competing intrinsic antiferromagnetic order and the ferromagnetic proximity effect in nan…
A ferromagnetic insulator attached to a superconductor is known to induce an exchange splitting of the Bardeen-Cooper-Schrieffer (BCS) singularity by a magnitude proportional to the magnetization, and penetrating into the superconductor to a depth comparable with the superconducting coherence length. We study this long-range magnetic proximity effect in EuS/Al bilayers and find that the exchange splitting of the BCS peaks is present already in the unpolarized state of the ferromagnetic insulator (EuS), and is being further enhanced when magnetizing the sample by a magnetic field. The measureme…
Room-temperature spin-lifetime anisotropy exceeding 60 in bilayer graphene spin valves proximity coupled to WSe$_2$
nd Institute of Physics and JARA-FIT, RWTH Aachen University（亚琛工业大学第二物理研究所和JARA-FIT）；Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich（于利希研究中心彼得·格林贝格研究所（PGI-9））
Compared to monolayer graphene, electrons in Bernal-stacked bilayer graphene (BLG) have an additional layer degree of freedom, offering a platform for developing {\it layered spintronics} with the help of proximity-induced magnetism. Based on an effective phenomenological model, we systematically study the effect of this magnetism on the spin-dependent band structure near the Fermi energy and identify the magnetic phases induced in BLG by proximity with magnets. We show that spin polarization can develop in BLG due to this proximity effect. This spin polarization depends strongly on the layer …
We identify and investigate thermal spin transport phenomena in sputter-deposited Pt/NiFe$_2$O$_{\textrm{4-x}}$ ($4\geq x \geq 0$) bilayers. We separate the voltage generated by the spin Seebeck effect from the anomalous Nernst effect contributions and even disentangle the intrinsic anomalous Nernst effect (ANE) in the ferromagnet (FM) from the ANE produced by the Pt that is spin polarized due to its proximity to the FM. Further, we probe the dependence of these effects on the electrical conductivity and the band gap energy of the FM film varying from nearly insulating NiFe$_2$O$_4$ to metalli…
We use magneto-conductivity to study the magnetic proximity effect on surface states of doped topological insulators. Our bilayers consist of a layer of Fe$_7$Se$_8$, which is a metallic ferrimagnet and a layer of Bi$_{0.8}$Sb$_{1.2}$Te$_{3}$ which is a highly hole-doped topological insulator. Using transport measurements and a modified Hikami-Larkin-Nagaoka model, we show that the ferromagnet shortens significantly the effective coherence length of the surface states, suggesting that a gap is opened at the Dirac point. We show that the magnetically induced gap persists on surface states which…
The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types of MR have been observed in much simpler bilayers consisting of ferromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR in these materials is very small (0.01 ~ 1%). Here, we demonstrate that NM/FM bilayers consisting of a NM InAs quantum well conductive channel and an insulating FM (Ga,Fe)Sb layer exhibit giant proximity magnetoresista…
We reveal a proximity effect between a topological band (Chern) insulator described by a Haldane model and spin-polarized Dirac particles of a graphene layer. Coupling weakly the two systems through a tunneling term in the bulk, the topological Chern insulator induces a gap and an opposite Chern number on the Dirac particles at half-filling resulting in a sign flip of the Berry curvature at one Dirac point. We study different aspects of the bulk-edge correspondence and present protocols to observe the evolution of the Berry curvature as well as two counter-propagating (protected) edge modes wi…
In this work the effects of defects in the superconducting phases of the twisted bilayer graphene (TBG) are investigated. A will-accepted low energy effective model and a non-magnetic impurity potential to mimic defects are employed. Different superconducting pairing symmetries, including $s$-wave, $(d+id)$-wave and $(p+ip)$-wave pairing, are considered. In single impurity case, the local density of states (DOS) are calculated for the pairing symmetries above. For different pairing symmetries the number and property of bound states induced by defects are different. In multi-impurity case, the …
Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum anomalous Hall effect in bilayer graphene, by separately imprinting spin-orbit and magnetic proximity effects in different layers. This results in varying spin splittings for the conduction and valence bands, which gives rise to a topological gap at a single Dirac cone. The topological phase can be controlled by a gate voltage and switched between valleys by…
Weak localization as probe of spin-orbit-induced spin-split bands in bilayer graphene proximity coupled to WSe$_2$
RWTH Aachen University（亚琛工业大学）；Forschungszentrum Jülich（于利希研究中心）；Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST（加泰罗尼亚纳米科学与技术研究所（ICN2，西班牙高等科研理事会与巴塞罗那自治大学联合））；National Institute for Materials Science（国立材料研究所）
We devise a model to explain why twisted bi-layer graphene (TBLG) exhibits insulating behavior when $ν=2,3$ charges occupy a unit moiré cell, a feature attributed to Mottness, but not for $ν=1$, clearly inconsistent with Mott insulation. We compute $r_s=E_U/E_K$, where $E_U$ and $E_K$ are the potential and kinetic energies, respectively, and show that (i) the Mott criterion lies at a density $10^4$ higher than in the experiments and (ii) a transition to a series of Wigner crystalline states exists as a function of $ν$. We find, for $ν=1$, $r_s$ fails to cross the threshold ($r_s = 37$) for the…
We investigate the electronic band structure and the proximity exchange effect in bilayer graphene on a family of ferromagnetic multilayers Cr$_2$X$_2$Te$_6$, X=Ge, Si, and Sn, with first principles methods. In each case the intrinsic electric field of the heterostructure induces an orbital gap on the order of 10 meV in the graphene bilayer. The proximity exchange is strongly band dependent. For example, in the case of Cr$_2$Ge$_2$Te$_6$, the low-energy valence band of bilayer graphene has exchange splitting of 8 meV, while the low energy conduction band's splitting is 30 times less (0.3 meV).…
We present a detailed study of the electronic and spin-orbit properties of single and bilayer graphene in proximity to the topological insulator Bi$_2$Se$_3$. Our approach is based on first-principles calculations, combined with symmetry derived model Hamiltonians that capture the low-energy band properties. We consider single and bilayer graphene on 1--3 quintuple layers of Bi$_2$Se$_3$ and extract orbital and proximity induced spin-orbit coupling (SOC) parameters. We find that graphene gets significantly hole doped (350 meV), but the linear dispersion is preserved. The proximity induced SOC …
Proximity Effects Between the Graphene Quasicrystal and Magic-Angle Twisted Bilayer Graphene
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST（加泰罗尼亚纳米科学技术研究所（ICN2），西班牙国家研究委员会和巴塞罗那高等研究院）；Department of Physics, Campus UAB（巴塞罗那自治大学物理系）；Institute of Condensed Matter and Nanosciences, Université catholique de Louvain (UCLouvain)（天主教鲁汶大学凝聚态与纳米科学研究所）；ICREA–Institució Catalana de Recerca i Estudis Avançats（加泰罗尼亚研究与高级研究所（ICREA））
We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves we conclude that the proximity induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic fi…
The magnetic proximity effect (MPE), ferromagnetic coupling at the interface of magnetically dissimilar layers, attracts much attention as a promising pathway for introducing ferromagnetism into a high-mobility non-magnetic conducting channel. Recently, our group found giant proximity magnetoresistance (PMR), which is caused by MPE at an interface between a non-magnetic semiconductor InAs quantum well (QW) layer and a ferromagnetic semiconductor (Ga,Fe)Sb layer. The MPE in the non-magnetic semiconductor can be modulated by applying a gate voltage and controlling the penetration of the electron…
