研究了低温超高真空下沉积钾时，杂质散射对双层石墨烯（BLG）中载流子输运的影响。带电杂质散射产生的电导率在载流子密度上呈超线性，在2-4 x 10^12 cm^-2的载流子密度测量范围内，其大小与单层石墨烯相似。在添加浓度为n_imp的带电杂质时，最小电导率Sigma_min与n_imp^-1/2成比例地降低，而电子和空穴熔池载流子密度与n_imp ^1/2成比例地增加。这些结果的有意沉积钾的BLG与带电杂质散射的理论预测吻合得很好。然而，我们的研究结果也表明，带电杂质散射单独不能解释所观察到的原始BLG钾掺杂前的SiO2上的输运性质。
英文摘要：
We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultra-high vacuum at low temperature. Charged impurity scattering gives a conductivity which is supra-linear in carrier density, with a magnitude similar to single-layer graphene for the measured range of carrier densities of 2-4 x 10^12 cm^-2. Upon addition of charged impurities of concentration n_imp, the minimum conductivity Sigma_min decreases proportional to n_imp^-1/2, while the electron and hole puddle carrier density increases proportional to n_imp^1/2. These results for the intentional deposition of potassium on BLG are in good agreement with theoretical predictions for charged impurity scattering. However, our results also suggest that charged impurity scattering alone cannot explain the observed transport properties of pristine BLG on SiO2 before potassium doping.
We study the problem of non-magnetic impurities adsorbed on bilayer graphene in the diluted regime. We analyze the impurity spectral densities for various concentrations and gate fields. We also analyze the effect of the adsorbate on the local density of states (LDOS) of the different C atoms in the structure and present some evidence of strong localization for the electronic states with energies close to the Dirac point.
We consider a double-layer system made of two parallel bilayer graphene sheets separated by a dielectric medium. We calculate the finite-temperature electrical conductivity of the first layer due to charged impurities located in two layers. We study the effects of temperature, interlayer distance, dielectric constants and impurity concentration, carrier concentration on the electrical conductivity. We show the importance of charged impurities located in layer II in determining electrical conductivity of the first layer for small interlayer distance. The results in this paper give us more under…
We demonstrate that single layer graphene exhibits the electronic structure of a bilayer when it is connected to two gated bilayers. The energy gap characteristic for gated bilayer is induced in the single layer and it persists for distances separating the bilayers up to 20 nm. Most importantly, we report on the appearance of topologically protected gapless state localized in a single graphene layer when the distant bilayers differ in the stacking order. The one-dimensional current in the topological state flows in a single layer graphene, and this finding suggests a new exploitation of graphe…
We show that bilayer graphene exhibits magneto-electric effects that are formally similar to those commonly seen in band insulators with broken inversion and time-reversal symmetries. Three unusual features characterize the magneto-electric responses exhibited by bilayer graphene: (i) unlike most other magneto-electric media, bilayer graphene is a conductor, (ii) bilayer graphene has a non-quantized magneto-electric coupling even though its electronic structure does not break parity and time-reversal symmetry, and (iii) the magnitude of the magneto-electric coupling in bilayer graphene is dete…
Heterostructures formed between two different van der Waals materials enable interactions and functionalities absent in each component. In this work we show that vicinity to an atomically thin WSe$_2$ sheet dramatically impacts the energies of the symmetry-broken low Landau levels of bilayer graphene, possibly due to screening. We present a systematic study of the magnetic field and electrical displacement field dependences of the Landau level gaps at filling factor $ν$ = 1, 2, 3, and compare to BN encapsulated pristine bilayer graphene. The exchange-dominated energy splitting between the N = …
Twisted bilayer graphenes with magical angle exhibit strongly correlated electronic properties because of the isolated flat band at the Fermi level. We studied the twisted bilayer graphene with substrates on both layers. The substrate induce Kekul$\acute{e}$ distortion for each graphene layer. The systems are investigated by both continuous Dirac Fermion model and tight binding model. The two investigations give similar conclusion that isolated flat band with ultra-narrow bandwidth could appear.
The momentum transport in ultraclean bilayer graphene is characterized by the viscous transport. In quantizing magnetic field the momentum current passes through the guiding centers of cyclotron orbits. In this study we derive the quantized Hall viscosity of bilayer graphene that is the next topological feature after the quantum Hall effect. This can be detected in the non-local magnetoresistivity measurements that varies with the quantized steps of magnetoresistivity.
Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on Silicon Carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer- size dimensions. In contrast, SiC/G devices containing bilayer graphene domains display variations in their electronic properties linked to the amount of bilayer content.
Using electrical transport experiments and shot noise thermometry, we investigate electron-phonon heat transfer rate in a suspended bilayer graphene. Contrary to monolayer graphene with heat flow via three-body supercollision scattering, we find that regular electron - optical phonon scattering in bilayer graphene provides the dominant scattering process at electron energies $ \gtrsim 0.15$ eV. We determine the strength of these intrinsic heat flow processes of bilayer graphene and find good agreement with theoretical estimates when both zone edge and zone center optical phonons are taken into…
We theoretically investigate a folded bilayer graphene structure as an experimentally realizable platform to produce the one-dimensional topological zero-line modes. We demonstrate that the folded bilayer graphene under an external gate potential enables tunable topologically conducting channels to be formed in the folded region, and that a perpendicular magnetic field can be used to enhance the conducting when external impurities are present. We also show experimentally that our proposed folded bilayer graphene structure can be fabricated in a controllable manner. Our proposed system greatly …
In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using Landauer-Büttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimension…
This article reviews the theoretical and experimental work related to the electronic properties of bilayer graphene systems. Three types of bilayer stackings are discussed: the AA, AB, and twisted bilayer graphene. This review covers single-electron properties, effects of static electric and magnetic fields, bilayer-based mesoscopic systems, spin-orbit coupling, dc transport and optical response, as well as spontaneous symmetry violation and other interaction effects. The selection of the material aims to introduce the reader to the most commonly studied topics of theoretical and experimental …
Unique electronic band structure of graphene with its semi-metallic features near the charge neutrality point is sensitive to impurity effects. Using the Lifshitz and Anderson impurity models, we study in detail the disorder induced spectral phenomena in the electronic band structure of graphene, namely, the formation of resonances, quasi-gaps, bound states, impurity sub-bands, and their overall impact on the electronic band restructuring and the associated Mott-like metal-insulator transitions. We perform systematic analytical and numerical study for realistic impurities, both substitutional …
This work investigates the electronic properties of the energy spectrum of a hybrid system composed of (i) a circular quantum dot of monolayer graphene surrounded by an infinite sheet of AA-stacked bilayer graphene and (ii) a circular quantum dot of AA-stacked graphene bilayer surrounded by infinite monolayer graphene. We establish analytical findings for the related energy levels and wave functions using the continuum model and the zigzag boundary conditions at the graphene monolayer-bilayer interface. We investigate the effects of perpendicular magnetic, dot radius, and electrical fields on …
We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and temperature, both long-ranged Coulomb scattering and short-ranged defect scattering within a Boltzmann theory relaxation time approach. For experimentally relevant disorder, impurity scattering contributes a resistivity comparable to (much larger than) the phonon scattering contribution at high (low) temperatures. Decreasing twist angle leads to larger resi…
We show that in gapped bilayer graphene, quasiparticle tunneling and the corresponding Berry phase can be controlled such that it exhibits features of single layer graphene such as Klein tunneling. The Berry phase is detected by a high-quality Fabry-Pérot interferometer based on bilayer graphene. By raising the Fermi energy of the charge carriers, we find that the Berry phase can be continuously tuned from $2π$ down to $0.68π$ in gapped bilayer graphene, in contrast to the constant Berry phase of $2π$ in pristine bilayer graphene. Particularly, we observe a Berry phase of $π$, the standard val…
In this comment we show that some equations and results of the paper titled "Dielectric screening and plasmons in AA-stacked bilayer graphene" are not correct. Furthermore, we present our results which seems to be more correct.
We report experimental signatures of plasmonic effects due to electron tunneling between adjacent graphene layers. At sub-nanometer separation, such layers can form either a strongly coupled bilayer graphene with a Bernal stacking or a weakly coupled double-layer graphene with a random stacking order. Effects due to interlayer tunneling dominate in the former case but are negligible in the latter. We found through infrared nano-imaging that bilayer graphene supports plasmons with a higher degree of confinement compared to single- and double-layer graphene, a direct consequence of interlayer tu…
We present a study of the nonlinear optical response of twisted bilayer graphene. We discuss the contribution of the Berry phase to the non-linearity when inversion symmetry is broken, thus underlining the interplay between band and real space geometry, and nonlinear response. We also highlight an effect which is characteristic of extreme nonlinear optics: the generation of harmonics in disguise. This effect emerges in twisted bilayer graphene at relatively moderate fields strengths because of the much reduced band width. Our findings contribute to the understanding of the link between geometr…
We study the electronic properties of commensurate faulted bilayer graphene by diagonalizing the one-particle Hamiltonian of the bilayer system in a complete basis of Bloch states of the individual graphene layers. Our novel approach is very general and can be easily extended to any commensurate graphene-based heterostructure. Here, we consider three cases: i) twisted bilayer graphene, ii) bilayer graphene where triaxial stress is applied to one layer, and iii) bilayer graphene where uniaxial stress is applied to one layer. We show that the resulting superstructures can be divided into distinc…
We introduce a minimum tight-binding model with only three parameters extracted from graphene and untwisted bilayer graphene. This model reproduces quantitatively the electronic structure of not only these two systems and bulk graphite near the Fermi level, but also that of twisted bilayer graphene including the value of the magic angle, at which bands at $E_F$ flatten without overlap and two gaps open, one above and one below $E_F$. The Hamiltonian is sufficiently transparent and flexible to be adopted to other twisted layered systems.
