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arXiv 0912.0799cond-mat.mes-hall
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双层石墨烯有限温度下屏蔽诱导输运

Screening-Induced Transport at Finite Temperature in Bilayer Graphene

Min Lv, Shaolong Wan

摘要:

在无规相位近似下,计算了库仑杂质散射作用下双层石墨烯(BLG)的温度依赖性载流子输运。我们发现在零动量转移时极化率等于态密度,在任意温度下,在大动量转移时极化率增加了一个因子$\log{4}$。在$q=2k_F$的静态极化率的尖锐尖点,由于强烈的后向散射,将通过增加温度而变得平滑。研究了BLG在低温和高温下的电导率渐近行为,发现随着温度的升高,BLG的电导率从二维电子气(2DEG)的线性温度金属行为转变为单层石墨烯(SLG)的二次温度绝缘行为。

英文摘要:

We calculate the temperature-dependent charge carrier transport of bilayer graphene (BLG) impacted by Coulomb impurity scattering within the random phase approximation. We find the polarizability is equal to the density of states at zero momentum transfer and is enhanced by a factor $\log{4}$ at large momentum transfer for arbitrary temperature. The sharp cusp of static polarizability at $q=2k_F$, due to the strong backward scattering, would be smooth by the increasing temperatures. We also obtain the asymptotic behaviors of conductivity of BLG at low and high temperature, and find it turns from a two dimensional electron gas (2DEG) like linear temperature metallic behavior to a single layer graphene (SLG) like quadratic temperature insulating behavior as the temperature increases.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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