The effect of nuclear spins in Fe/GaAs all-electrical spin-injection devices is investigated. At temperatures below 50 K, strong modifications of the non-local spin signal are found that are characteristic for hyperfine coupling between conduction electrons and dynamically polarized nuclear spins. The perpendicular component of the nuclear Overhauser field depolarizes electron spins near zero in-plane external magnetic field, and can suppress such dephasing when antialigned with the external field, leading to satellite peaks in a Hanle measurement. The features observed agree well with a Monte Carlo simulation of the spin diffusion equation including hyperfine interaction, and are used to study the nuclear spin dynamics and relate it to the spin polarization of injected electrons.
Efficient detection of spin-charge conversion is crucial for advancing our understanding of emergent phenomena in spin-orbit-coupled nanostructures. Here, we provide proof of principle of an electrical detection scheme of spin-charge conversion that enables full disentanglement of competing spin-orbit coupling transport phenomena in diffusive lateral channels i.e. the inverse spin Hall effect (ISHE) and the spin galvanic effect (SGE). A suitable detection geometry in an applied oblique magnetic field is shown to provide direct access to spin-charge transport coefficients through a simple symme…
We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab-initio simulations, symmetry-based modeling, and large-scale calculations of the spin Hall conductivity, it is shown that small electric fields can efficiently vary the spin textures of edge currents in monolayer 1T'-WTe2 by up to a 90-degree spin rotation, without jeopardizing their topological character. These findings suggest a new kind of gate-controllable spin-based device, topologically …
Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators
拓扑绝缘体（TI）是一类新型量子材料，在表面态表现出无质量狄拉克费米子的自旋动量锁定（SML）。通常的光学方法，如角度和自旋分辨光电子能谱，已被用来观察螺旋自旋极化的表面态的三维（3D）TI到室温。最近，自旋极化的表面电流在3D TI检测的电气方法使用铁磁（FM）接触在横向自旋阀测量几何。然而，迄今为止，用这种电学方法探测自旋织构仅限于125K以下的温度，这限制了其应用潜力。在这里，我们展示了室温下的电检测的自旋极化的表面上的Bi $_2$ Se $_3$由于SML通过采用自旋敏感FM隧道接触。在Bi $_2$ Se $_3$表面上的电流诱导自旋极化在室温下通过测量自旋阀信号同时切换FM检测器的磁化方向来探测。自旋信号随电流偏置线性增加，与电流方向相反的符号，表现出弱的温度依赖性，并随着TI厚度的增加而减小，理论预测。我们的结果证明了3D TI表面上自旋极化的电检测，这可能会导致环境温度下创新的基于自旋的量子信息技术。
InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and have long been of interest for incorporation into quantum optoelectronic devices ranging from single photon sources to multi-bit quantum computers. The properties of single QDs, or carriers confined within those QDs, can be tuned by external electric fields, which provides an important tool for the development of scalable and tunable devices. Deterministic char…
Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pumping the Fermi sea of 2D electrons to a high degree of spin/valley polarization (up to 75%) using circularly-polarized light, the lateral diffusion of the electron polarization can be mapped out via the photoluminescence induced by a spatially-separated and linearly-polarized probe laser. Up to 25% spin-valley polarization is observed at pump-probe separations up to 20 microns. Char…
We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias voltage applied between two FM/SC Schottky tunnel contacts, the local spin-accumulation signal can show nonmonotonic variations, including a sign inversion. A part of the nonmonotonic features can be understood qualitatively by considering the rapid reduction in the spin polarization of the FM/SC interfaces with increasing bias voltage. In addition to the sign inversion of the FM/SC interface spin polarization, the influe…
Spin-momentum locked (SML) topological surface state (TSS) provides exotic properties for spintronics applications. The spin-polarized current, which emerges owing to the SML, can be directly detected by performing spin potentiometric measurement. We observed spin-polarized current using a bulk insulating topological insulator (TI), Bi1.5Sb0.5Te1.7Se1.3, and Co as the ferromagnetic spin probe. The spin voltage was probed with varying the bias current, temperature, and gate voltage. Moreover, we observed non-local spin-polarized current, which is regarded as a distinguishing property of TIs. Th…
We explore universal behaviors of magnetic domain wall driven by the spin-transfer of an electrical current, in a ferromagnetic (Ga,Mn)(As,P) thin film with perpendicular magnetic anisotropy. For a current direction transverse to domain wall, the dynamics of the thermally activated creep regime and the depinning transition are found to be compatible with a self-consistent universal description of magnetic field induced domain wall dynamics. This common universal behavior, characteristic of the so-called quenched Edwards-Wilkinson universality class, is confirmed by a complementary and independ…
We analyse the electrical response of narrow graphene nanogaps in search for transport signatures stemming from spin-polarized edge states. We find that the electrical transport across graphene nanogaps having perfectly defined zigzag edges does not carry any spin-related signature. We also analyse the magnetic and electrical properties of nanogaps whose electrodes have wedges that possibly occur in the currently fabricated nanogaps. These wedges can host spin polarized wedge low-energy states due to the bipartite nature of the graphene lattice. We find that these spin-polarized low-energy mod…
Electrical Control of Dynamic Spin Splitting Induced by Exchange Interaction as Revealed by Time Resolved Kerr Rotation in a Degenerate Spin-Polarized Electron Gas
Trion Engineered Multimodal Transistors in Two dimensional Bilayer Semiconductor Lateral Heterostructures
Indian Institute of Technology Kharagpur（印度理工学院卡拉格普尔分校）；Indian Institute of Technology Bombay（印度理工学院孟买分校）；Philipps-University at Marburg（马尔堡菲利普斯大学）；Chalmers University of Technology（查尔姆斯理工大学）
We investigate the behavior of both pure spin and spin-polarized currents measured with four probe non-local and two probe local configurations up to room temperature and under external gate voltage in a lateral graphene transistor, produced using a standard large-scale microfabrication process. The high spin diffusion length of pristine graphene in the channel, measured both directly and by the Hanle effect, and the tuning of relation between electrode resistance area present in the device architecture, allowed us to observe local tunnel magnetoresistance at room temperature, a new finding fo…
A Comprehensive Study of Charge-Carrier Mobility in Double Lateral-Gate Silicon Junctionless Transistors
Laye Rooyan Part, Isfahan Science and Technology Town（拉耶鲁扬部分，伊斯法罕科技城）；Department of Physics, Isfahan University of Technology（伊斯法罕理工大学物理系）；Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia（马来西亚国立大学微工程与纳米电子研究所）；Department of Electrical and Computer Engineering, University of Texas at Dallas（德克萨斯大学达拉斯分校电气与计算机工程系）
