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arXiv 0907.3671cond-mat.str-el
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无过渡金属离子存在下杂质半导体铁磁性的研究

Search for Ferromagnetism in doped semiconductors in the absence of transition metal ions

Erik Nielsen, R. N. Bhatt

摘要:

与掺杂有过渡金属磁性元素的半导体(其在低于~ 100 K的温度下变成铁磁性)相反,掺杂有非磁性离子的半导体(例如掺杂有磷的硅)在低至毫开尔文温度下没有显示出铁磁性的证据。这是尽管这样的事实,即对于低密度的系统,预计将很好地模拟的哈伯德模型,这是预测有一个铁磁基态在T=0的2-或3-维的二分晶格在半填充附近的强相关性的限制。我们研究了低密度半导体中由类氢中心形成的杂质带,并表明它是由广义哈伯德模型描述的,该模型除了具有强的电子-电子相互作用和无序性外,还具有固有的电子-空穴不对称性。借助平均场方法以及精确对角化的集群周围的半填充,我们可以建立一个铁磁基态的存在,至少在纳米尺度上,这是更强大的比发现在标准的哈伯德模型。这种铁磁性在体系统无法达到的区域中最明显,但在量子点和2D异质结构中可以达到。我们提出了广泛的数值计算结果表明,在周期性和位置无序的2D系统中发生的高自旋基态的小系统。我们考虑了真实杂质半导体的性质,如位置无序和电子-空穴不对称性,如何影响小的二维系统的基态自旋。我们还讨论了这一工作与稀磁半导体如Ga_(1-x)Mn_(x)As的关系,它们虽然是无序的,但在相对较高的温度下显示出铁磁性。

英文摘要:

In contrast to semiconductors doped with transition metal magnetic elements, which become ferromagnetic at temperatures below ~ 100K, semiconductors doped with non-magnetic ions (e.g. silicon doped with phosphorous) have not shown evidence of ferromagnetism down to millikelvin temperatures. This is despite the fact that for low densities the system is expected to be well modeled by the Hubbard model, which is predicted to have a ferromagnetic ground state at T=0 on 2- or 3-dimensional bipartite lattices in the limit of strong correlation near half-filling. We examine the impurity band formed by hydrogenic centers in semiconductors at low densities, and show that it is described by a generalized Hubbard model which has, in addition to strong electron-electron interaction and disorder, an intrinsic electron-hole asymmetry. With the help of mean field methods as well as exact diagonalization of clusters around half filling, we can establish the existence of a ferromagnetic ground state, at least on the nanoscale, which is more robust than that found in the standard Hubbard model. This ferromagnetism is most clearly seen in a regime inaccessible to bulk systems, but attainable in quantum dots and 2D heterostructures. We present extensive numerical results for small systems that demonstrate the occurrence of high-spin ground states in both periodic and positionally disordered 2D systems. We consider how properties of real doped semiconductors, such as positional disorder and electron-hole asymmetry, affect the ground state spin of small 2D systems. We also discuss the relationship between this work and diluted magnetic semiconductors, such as Ga_(1-x)Mn_(x)As, which though disordered, show ferromagnetism at relatively high temperatures.

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