We study the possibility of d0 ferromagnetism in the compound
MgO doped with nitrogen (N). The Haldane-Anderson impurity model is formulated within the tight-binding approximation for determining the host band-structure and the impurity-host hybridization. Using the quantum Monte Carlo technique, we observe a finite local moment for an N impurity, and long-range ferromagnetic correlations between two N impurities. The ferromagnetic correlations are strongly influenced by the impurity bound state. When the ferromagnetic correlation between a pair of impurities is mapped onto the isotropic Heisenberg model for two spin-1/2 particles, the effective exchange constant J12 is found to increase with increasing temperature. Similar temperature dependence of J12 is also obtained in other diluted magnetic semiconductors, such as zincblende ZnO doped with Mn. The temperature dependence of J12 suggests that the mapping of the full Hamiltonian onto the spin Hamiltonian cannot fully describe the magnetic correlations for the diluted magnetic semiconductors at least in the limit of low impurity spin.
Epitaxy of Fe3O4 on Si(001) by pulsed laser deposition using a TiN/MgO buffer layer
氧化物材料在硅（Si）衬底上的外延对于使用氧化物的各种物理性质如铁电性、铁磁性或超导性的未来功能器件具有极大的兴趣。最近，具有高自旋极化的载流子的材料已经成为自旋电子学中的氧化物-氧化物混合器件的关注点。在这里，我们报告的脉冲激光沉积磁铁矿（Fe 3 O 4）在Si（001）衬底上清洁的原位激光束高温处理。在沉积氮化钛（TiN）和氧化镁（MgO）的双缓冲层之后，可以生长高质量的外延磁铁矿层，如通过RHEED强度振荡和高分辨率X射线衍射所验证的。
We investigated the electronic and optical properties of bilayer AB stacked Boron and Nitrogen vacancies in hexagonal Boron Nitride (h-BN) using density functional theory (DFT). The density of states (DOS) and electronic band structure showed that Boron vacancy in bilayer h-BN results in a magnetic and conducting ground state. The band gap energy ranges from 4.56 eV for the pristine BN bilayer to 0.12 eV for a single Nitrogen vacancy in the bilayer. Considering the presence of 1,3,4-Boron vacancy, half metallic character is observed. However, the 2-boron vacancy configuration resulted in metal…
Thin FeRh film was extensively studied recently, and an emergent substrate- and capping-dependent interfacial ferromagnetism (FM) was widely observed in experiments. However, the voltage modulation of this interfacial ferromagnetism is barely studied, which would have profound applications in antiferromagnetic (AFM) FeRh-based magnetoelectric-random access memory (MeRAM). Using ab initio techniques, we comparatively study the interfacial ferromagnetic properties and magnetoelectric responses of ultrathin FeRh films capped by heavy transition metal Ta. We find that Ta capping reverses the phase…
We investigate the structural and magnetic properties of La$_{0.7}$Sr$_{0.3}$CrO$_3$ (LSCO)/La$_{0.7}$Sr$_{0.3}$MnO$_3$(LSMO) heterostructures grown on (001)-oriented MgO by molecular beam epitaxy. Due to the large film-substrate lattice mismatch, strain relaxation is found to occur within the first 2-3 unit cells (uc) of the film as evidenced by reflection high energy electron diffraction and high-resolution synchrotron X-ray reciprocal space mapping. We find that the presence of the LSCO spacer and capping layers leads to ferromagnetism in ultra-thin LSMO layers with thicknesses on the order…
Nitrogen-Vacancy-Mediated Magnetism in Sputtered GdN Thin Films
Indian Institute of Science（印度科学研究所）；Jawaharlal Nehru Center for Advanced Scientific Research（贾瓦哈拉尔·尼赫鲁高级科学研究中心）；Indian Institute of Technology Madras（马德拉斯印度理工学院）；IISER Thiruvananthapuram（特凡纳普拉姆印度科学教育研究院）；BITS Pilani K. K. Birla Goa Campus（比拉工业与科学研究所皮拉尼校区K.K.比尔拉果阿分校）
Exchange Interaction and $T_c$ in Alkaline-earth-metal-oxide-based DMS without Magnetic Impurities: First Principle Pseudo-SIC and Monte Carlo Calculation
通过第一性原理计算，探讨了碱土金属氧化物中引入碳原子诱导半金属铁磁性的前景。利用类赝势自相互作用修正的局域自旋密度方法计算了体系的电子结构和交换耦合常数，讨论了体系铁磁性的起源。居里温度（$T_c$）也通过采用蒙特卡罗模拟预测。结果表明，考虑电子自相互作用后，C在主体材料中诱导的半金属铁磁性比标准LDA情形更稳定，C的$2p$电子态在带隙中的局域化程度更高，短程交换作用占优势.虽然MgO $_{1-x}$ C $_x$中的铁磁性由于$1st$ -最近邻对的交换相互作用而稳定，并且可能在较高的$x$下被反铁磁性超交换相互作用抑制，但是CaO $_{1-x}$ C $_x$、SrO $_{1-x}$ C $_x$和BaO $_{1-x}$ C $_x$中的铁磁性通过$1st$ -和$2nd$ -最近邻对两者而稳定，而$T_c$随C浓度单调增加。
Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes a daunting challenge for potential applications. Here, a \textit{nonmagnetic}-doping strategy is proposed to produce ferromagnetism and realize QAHE in topological insulators. We numerically demonstrated that magnetic moments can be induced by nitrogen or carbon substitution in Bi$_2$Se$_3$, Bi$_2$Te$_3$, and Sb$_2$Te$_3$, but only nitrogen-doped Sb$_2$Te$_3…
BaMF4 (M=Fe, Co, Ni and Mn) family are typical multiferroic materials, having antiferromagnetism at around liquid nitrogen temperature. In this work, polycrystalline BaFeF4 has been prepared by solid state reaction. The slight deficiency of Fe leads to the coexistence of valence states of +2 and +3, facilitating the electrons to hop between the neighboring Fe2+ and Fe3+ ions through the middle F- ion, leading to the strong double exchange interaction with weak ferromagnetism above room temperature. A bifurcation at about 170 K between the zero-field-cooled and field-cooled temperature dependen…
Two-dimensional (2D) magnetic van der Waals materials provide a powerful platform for studying fundamental physics of low-dimensional magnetism, engineering novel magnetic phases, and enabling ultrathin and highly tunable spintronic devices. To realize high quality and practical devices for such applications, there is a critical need for robust 2D magnets with ordering temperatures above room temperature that can be created via exfoliation. Here the study of exfoliated flakes of cobalt substituted Fe5GeTe2 (CFGT) exhibiting magnetism above room temperature is reported. Via quantum magnetic ima…
Pressure Dependence of Ferromagnetism in Uranium Hydride UH$_3$ up to 20 GPa Revealed by NV Centers Magnetometry
CEA DAM, DIF；Université Paris-Saclay（巴黎萨克雷大学）；CEA（法国原子能和替代能源委员会）；Laboratoire Matière en Conditions Extrêmes（极端条件物质实验室）；CNRS（法国国家科学研究中心）；ENS Paris-Saclay（巴黎萨克雷高等师范学院）；Centralesupelec（中央理工-电院）
A magneto-structural phase transition is investigated in single crystal CrN thin films grown by rf plasma molecular beam epitaxy on MgO(001) substrates. While still within the vacuum environment following MBE growth, $\it in-situ$ low-temperature scanning tunneling microscopy, and $\it in-situ$ variable low-temperature reflection high energy electron diffraction are applied, revealing an atomically smooth and metallic CrN(001) surface, and an $\it in-plane$ structural transition from 1$\times$1 (primitive CrN unit cell) to $\mathrm{\sqrt{2}\times\sqrt{2}-R45^\circ}$ with a transition temperatu…
Control of magnetic states by external factors has garnered a mainstream status in spintronic research for designing low power consumption and fast-response information storage and processing devices. Previously, magnetic-cation substitution is the conventional means to induce ferromagnetism in an intrinsic antiferromagnet. Theoretically, the anion-doping is proposed to be another effect means to change magnetic ground states. Here we demonstrate the synthesis of high-quality single-phase chromium oxynitride thin films using in-situ nitrogen doping. Unlike antiferromagnetic monoanionic chromiu…
We demonstrate room-temperature ferromagnetism with in-plane magnetic anisotropy in thin flakes of the CrTe$_2$ van der Waals ferromagnet. Using quantitative magnetic imaging with a single spin magnetometer based on a nitrogen-vacancy defect in diamond, we infer a room-temperature in-plane magnetization in the range of $M\sim 27$ kA/m for flakes with thicknesses down to $20$ nm. In addition, our measurements indicate that the orientation of the magnetization is not determined solely by shape anisotropy in micron-sized CrTe$_2$ flakes, which suggest the existence of a non-negligible magnetocrys…
We report on the formation of the dilute $Pd_{1-x}Fe_x$ compositions with tunable magnetic properties under an ion-beam implantation of epitaxial Pd thin films. Binary $Pd_{1-x}Fe_x$ alloys with a mean iron content $x$ of $0.025$, $0.035$ or $0.075$ were obtained by the implantation of $40 keV$ $Fe^+$ ions into the palladium films on MgO (001) substrate to the doses of $0.5\cdot10^{16}, 1.0\cdot10^{16}$ and $3.0\cdot10^{16}$ $ions/cm^2$, respectively. Structural and magnetic studies have shown that iron atoms occupy regular fcc-lattice Pd-sites without the formation of any secondary crystallog…
