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arXiv 0705.2038cond-mat.str-el
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非磁性杂质半导体中的纳米尺度铁磁性

Nanoscale ferromagnetism in non-magnetic doped semiconductors

Erik Nielsen, R. N. Bhatt

摘要:

虽然在稀磁半导体如Ga_(1-x)Mn_(x)As中可以观察到相对高温下的铁磁性,但没有磁性离子的杂质半导体还没有显示出铁磁性的证据。使用一个广义的无序哈伯德模型设计来表征半导体中的类氢中心,我们发现,这样的系统也可能表现出铁磁基态,至少在纳米尺度上。这是最清楚地发现,在一个制度无法进入散装系统,但可达到量子点以及异质结构。我们提出的数值计算结果表明,在晶格和位置无序系统的高自旋基态的发生。我们研究如何磁相位的影响,真正的杂质半导体的特性,如位置的障碍和电子空穴的不对称性。

英文摘要:

While ferromagnetism at relatively high temperatures is seen in diluted magnetic semiconductors such as Ga_(1-x)Mn_(x)As, doped semiconductors without magnetic ions have not shown evidence for ferromagnetism. Using a generalized disordered Hubbard model designed to characterize hydrogenic centers in semiconductors, we find that such systems may also exhibit a ferromagnetic ground state, at least on the nanoscale. This is found most clearly in a regime inaccessible to bulk systems, but attainable in quantum dots as well as heterostructures. We present numerical results demonstrating the occurrence of high spin ground states in both lattice and positionally disordered systems. We examine how the magnetic phases are affected by characteristics of real doped semiconductors, such as positional disorder and electron-hole asymmetry.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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