arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0907.2001cond-mat.mtrl-sci
收藏

Ga $_x$ In $_{1-x}$ N带隙的杂化密度泛函计算

Hybrid density functional calculations of the band gap of Ga$_x$In$_{1-x}$N

Xifan Wu, Eric J. Walter, Andrew M. Rappe, Roberto Car, Annabella Selloni

摘要:

最近的理论工作提供的证据表明,混合泛函,其中包括一小部分的确切(Hartree Fock)交换在密度泛函理论(DFT)的交换和相关条款,显着改善半导体带隙的描述相比,本地和半本地的近似。基于最近发展的计算扩展绝缘体系中精确交换的有序$N$方法,我们实现了一个有效的方案来确定混合泛函带隙。我们使用这个方案来研究的带隙和其他电子性质的三元化合物在$_{1-x}$ Ga $_{x}$ N使用64原子的超原胞模型。

英文摘要:

Recent theoretical work has provided evidence that hybrid functionals, which include a fraction of exact (Hartree Fock) exchange in the density functional theory (DFT) exchange and correlation terms, significantly improve the description of band gaps of semiconductors compared with local and semilocal approximations. Based on a recently developed order-$N$ method for calculating the exact exchange in extended insulating systems, we have implemented an efficient scheme to determine the hybrid functional band gap. We use this scheme to study the band gap and other electronic properties of the ternary compound In$_{1-x}$Ga$_{x}$N using a 64-atom supercell model.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑