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arXiv 1101.1871cond-mat.mtrl-sci
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用Heyd-Scuseria-Ernzerhof混合泛函重新研究Mn掺杂Ge

Revisiting the Mn-doped Ge using the Heyd-Scuseria-Ernzerhof hybrid functional

A. Stroppa, G. Kresse, A. Continenza

摘要:

我们使用Perdew-Burke-Ernzerhof(PBE)交换相关泛函、DFT+ $U$和Heyd-Scuseria-Ernzerhof混合泛函(HSE)对Mn掺杂锗半导体进行了比较\textit{ab-initio}研究。我们表明,HSE功能是能够正确地占主机矩阵以及Mn-杂质半导体的相关基态性质。尽管DFT+ $U$和HSE描述非常相似,但仍存在一些差异。特别地,当采用合适的$U$值时,使用DFT+ $U$损失半金属度,所述合适的$U$值被调整以恢复光电发射光谱。为了比较,我们还讨论了硅中Mn的情况。

英文摘要:

We perform a comparative \textit{ab-initio} study of Mn-doped Germanium semiconductor using the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional, DFT+$U$ and Heyd-Scuseria-Ernzerhof hybrid functional (HSE). We show that the HSE functional is able to correctly account for the relevant ground state properties of the host matrix as well as of Mn-doped semiconductor. Although the DFT+$U$ and the HSE description are very similar, some differences still remain. In particular, the half-metallicity is lost using DFT+$U$ when a suitable $U$ value, tuned to recover the photoemission spectra, is employed. For comparison, we also discuss the case of Mn in Silicon.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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