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arXiv 1111.4515cond-mat.mtrl-sci
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用中程屏蔽混合泛函改进半导体晶格参数和带隙

Improved Semiconductor Lattice Parameters and Band Gaps from a Middle-Range Screened Hybrid Functional

Melissa J. Lucero, Thomas M. Henderson, Gustavo E. Scuseria

摘要:

我们发现,中等范围的交换相关混合亨德森,Izmaylov,Scuseria和Savin(HISS)执行非常好的元素和二元半导体与窄或可见光谱带隙,以及一些更宽的间隙或更多的离子系统的商业使用。晶格参数是优于那些预测的筛选混合功能的海德,Scuseria和Ernzerhof(HSE),并提供了一个显着的改善,半局部泛函预测的几何形状。HISS还产生优于那些专门为固态开发的泛函所产生的带隙。计时表明,HISS是更计算效率比HSE,这意味着高品质的晶格常数加上改进的光学带隙预测使HISS一个有用的辅助HSE在几何敏感的半导体建模。

英文摘要:

We show that the middle-range exchange-correlation hybrid of Henderson, Izmaylov, Scuseria and Savin (HISS) performs extremely well for elemental and binary semiconductors with narrow or visible spectrum band gaps, as well as some wider gap or more ionic systems used commercially. The lattice parameters are superior to those predicted by the screened hybrid functional of Heyd, Scuseria and Ernzerhof (HSE), and provide a significant improvement over geometries predicted by semilocal functionals. HISS also yields band gaps superior to those produced by functionals developed specifically for the solid state. Timings indicate that HISS is more computationally efficient than HSE, implying that the high quality lattice constants coupled with improved optical band gap predictions render HISS a useful adjunct to HSE in the modeling of geometry-sensitive semiconductors.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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