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arXiv 1105.3079cond-mat.mtrl-sci
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4 H- SiC中空位的Heyd-Scuseria-Ernzerhof屏蔽杂化密度泛函大尺度电子结构计算

Large-scale electronic structure calculations of vacancies in 4H-SiC using the Heyd-Scuseria-Ernzerhof screened hybrid density functional

Tamas Hornos, Adam Gali, Bengt G. Svensson

摘要:

采用混合密度泛函(HSE 06)和精确的电荷修正方案,对4 H-SiC中空位的电子结构进行了大尺度和无能隙误差的计算.根据计算结果,提出了碳空位是导致Z1/2和EH 6/7 DLTS中心的主要原因

英文摘要:

Large-scale and gap error free calculations of the electronic structure of vacancies in 4H-SiC have been carried out using a hybrid density functional (HSE06) and an accurate charge correction scheme. Based on the results the carbon vacancy is proposed to be responsible for the Z1/2 and EH6/7 DLTS centers

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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