We present and compare three distinct atomistic models -- based on first principles and semi-empirical approaches -- of the structural and electronic properties of Ge$_{1-x}$Sn$_{x}$ alloys. Density functional theory calculations incorporating Heyd-Scuseria-Ernzerhof (HSE) and modified Becke-Johnson (mBJ) exchange-correlation functionals are used to perform structural relaxation and electronic structure calculations for a series of Ge$_{1-x}$Sn$_{x}$ alloy supercells. Based on HSE calculations, a semi-empirical valence force field (VFF) potential and $sp^{3}s^{\ast}$ tight-binding (TB) Hamiltonian are parametrised. Comparing the HSE, mBJ and TB models, and using the HSE results as a benchmark, we demonstrate that: (i) mBJ calculations provide an accurate first principles description of the electronic structure at reduced computational cost, (ii) the VFF potential is sufficiently accurate to circumvent the requirement to perform first principles structural relaxation, and (iii) TB calculations provide a good quantitative description of the alloy electronic structure in the vicinity of the band edges. Our results also emphasise the importance of Sn-induced band mixing in determining the nature of the conduction band structure of Ge$_{1-x}$Sn$_{x}$ alloys. The theoretical models and benchmark calculations we present inform and enable predictive, computationally efficient and scalable atomistic calculations for disordered alloys and nanostructures. This provides a suitable platform to underpin further theoretical investigations of the properties of this emerging semiconductor alloy.
Tuning the opto-electronic properties through alloying is essential for semiconductor technology. Currently, mostly isovalent and isostructural alloys are used (e.g., group-IV and III-V), but a vast and unexplored space of novel functional materials is conceivable when considering more complex alloys by mixing aliovalent and heterostructural constituents. The real challenge lies in the quantitative property prediction for such complex alloys to guide their experimental exploration. We developed an approach to predict compositional dependence of both band-structure and electrical properties fro…
By fitting to a database of ab-initio forces and energies, we can extract pair potentials for alloys, with a simple six-parameter analytic form including Friedel oscillations, which give a remarkably faithful account of many complex intermetallic compounds. Furthermore, such potentials are combined with a method of discovering complex zero-temperature structures with hundreds of atoms per cell, given only the composition and the con- straint of known lattice parameters, using molecular-dynamics quenches. We apply this approach to structure prediction in the Al-Cu-Sc quasicrystal-related system…
Applying the approximate DFT-1/2 quasiparticle scheme, band structure unfolding, and generalized quasichemical approximation to describe chemical and structural disorder, we investigate the electronic structure of Bi$_{1-x}$Sb$_x$ alloys from first principles. We calculate the important energy levels near the Fermi energy versus the Sb concentration $x$ where the trivial-topological (TT) and semimetal-semiconductor (SMSC) transitions occur. We demonstrate that the energy variation of the relevant states deviates significantly from linear behavior and that the bowings are important to correctly…
Alloy Stabilized Wurtzite Ground State Structures of Zinc-Blende Semiconducting Compounds
用价力场模型和密度泛函理论计算了A $_x$ B $_{1-x}$ C纤锌矿（WZ）合金的基态结构，其中$x=$分别为0.25，0.5和0.75.结果表明，基态WZ合金的应变能和形成焓总是比相应的锌基合金低。因此，我们建议通过合金化可以稳定WZ相。这一新的想法得到以下事实的支持：WZ AlP $_{0.5}$ Sb $_{0.5}$、AlP $_{0.75}$ Sb $_{0.25}$、ZnS $_{0.5}$ Te $_{0.5}$和ZnS $_{0.75}$ Te $_{0.25}$合金在最低能量结构中比相应的ZB合金更稳定。据我们所知，这是合金采用与两个母相不同的结构的第一个例子。
Electronic properties of III-V semiconductor alloys are examined using first principles with the focus on the spatial localization of electronic states. We compare localization at the band edges due to various isovalent impurities in a host GaAs including its impact on the photoluminescence line widths and carrier mobilities. The extremity of localization at the band edges is correlated with the ability of individual elements to change the band gap and the relative band alignment. Additionally, the formation energies of substitutional defects are calculated and linked to challenges associated …
In this work we developed a practical and general modeling approach for thermal conductivity of metals and metal alloys that integrates ab initio and semiempirical physics-based models to maximize the strengths of both techniques. The approach supports creation of highly accurate, mechanistic, and extensible thermal conductivity modeling of alloys. The model was demonstrated on α-U and U-rich U-Zr and U-Mo alloys, which are potential fuels for advanced nuclear reactors. The safe use of U-based fuels requires quantitative understanding of thermal transport characteristics of the fuel. The model…
The standard theoretical understanding of the lattice thermal conductivity, $κ_{\ell}$, of semiconductor alloys assumes that mass disorder is the most important source of phonon scattering. In contrast, we show that the hitherto neglected contribution of force-constant (IFC) disorder is essential to accurately predict the $κ_{\ell}$ of those polar compounds characterized by a complex atomic-scale structure. We have developed an \emph{ab initio} method based on special quasirandom structures and Green's functions, and including the role of IFC disorder, and applied it in order to calculate the …
Semi-Empirical Tight Binding (TB) is known to be a scalable and accurate atomistic representation for electron transport for realistically extended nano-scaled semiconductor devices that might contain millions of atoms. In this paper an environment-aware and transferable TB model suitable for electronic structure and transport simulations in technologically relevant metals, metallic alloys, metal nanostructures and metallic interface systems is described. Part I of this paper describes the development and validation of the new TB model. The new model incorporates intra-atomic diagonal and off-…
The Semi-Empirical TB model developed in part I is applied to metal transport problems of current relevance in part II. A systematic study of the effect of quantum confinement, transport orientation and homogeneous strain on electronic transport properties of Cu is carried out. It is found that quantum confinement from bulk to nanowire boundary conditions leads to significant anisotropy in conductance of Cu along different transport orientations. Compressive homogeneous strain is found to reduce resistivity by increasing the density of conducting modes in Cu. The [110] transport orientation in…
Based on first-principles study, we report the finding of a new topological semimetal LiBaBi in half-Heusler phase. The remarkable feature of this nonmagnetic, inversion-symmetry-breaking material is that it consists of only simple $s$- and $p$-block elements. Interestingly, the material is ordinary insulator in the absence of spin-orbit coupling (SOC) and becomes nodal-surface topological semimetal showing drumhead states when SOC is included. This is in stark contrast to other nodal-line and nodal-surface semimetals, where the extended nodal structure is destroyed once SOC is included. Impor…
Parameters of the energy gap and, consequently, electronic, magnetic and galvanomagnetic properties in different X$_2$YZ Heusler alloys can vary quite strongly. In particular, half-metallic ferromagnets (HMFs) and spin gapless semiconductors (SGSs) with almost 100% spin polarization of charge carriers are promising materials for spintronics. The changes in the electrical, magnetic and galvanomagnetic properties of the Co$_2$YSi (Y = Ti, V, Cr, Mn, Fe) and Co$_2$MnZ Heusler alloys (Z = Al, Si, Ga, Ge) in possible HMF and/or SGS states were followed and their interconnection was established. Sig…
We develop an approach to apply Wang-Landau algorithm to multicomponent alloys in semi-grand-canonical ensemble. Although the Wang-Landau algorithm has great advantages over conventional sampling methods, there are few applications to alloys. This is because calculating compositions in semi-grand-canonical ensemble using the Wang-Landau algorithm requires a multi-dimensional density of states in terms of total energy and compositions. However, constructing the multi-dimensional density of states is difficult. In this study, we develop a simple approach to calculate the alloy phase diagram usin…
3d-electron induced magnetic phase transition in half-metallic semi-Heusler alloys
采用第一性原理计算研究了非磁性3-\textit{d}原子对半金属半Heusler合金Co $_{1-x}$ Cu $_{x}$ MnSb和Ni $_{1-x}$ Cu $_{x}$ MnSb（$0 \leq x \leq 1$）磁性的影响.我们确定了这两个系统在零温度下的磁相图，并获得了从铁磁到反铁磁状态的相变。对于低浓度的铜铁磁RKKY类交换机制是占主导地位的，而反铁磁超交换耦合变得重要的较大的铜含量导致所观察到的磁性相变。在HM间隙内的费米能级的位置上的两个系统中的磁性的强烈依赖性得到。所得结果与实验数据吻合良好。
This paper presents a detailed investigation of FeCr-based quaternary Heusler alloys. By using ultrasoft pseudopotential, electronic and magnetic properties of the compounds are studied within the framework of Density Functional Theory (DFT) by using the Quantum Espresso package. The thermodynamic, mechanical, and dynamical stability of the compounds is established through the comprehensive study of different mechanical parameters and phonon dispersion curves. The meticulous study of elastic parameters such as bulk, Young's, shear moduli, etc. is done to understand different mechanical propert…
We calculate the electronic structure of germanium-tin (Ge$_{1-x}$Sn$_{x}$) binary alloys for $0 \leq x \leq 1$ using density functional theory (DFT). Relaxed alloys with semiconducting or semimetallic behaviour as a function of Sn composition $x$ are identified, and the impact of epitaxial strain is included by constraining supercell lattice constants perpendicular to the [001] growth direction to the lattice constants of Ge, zinc telluride (ZnTe), or cadmium telluride (CdTe) substrates. It is found that application of 1% tensile strain reduces the Sn composition required to bring the (positi…
On the basis of local nonequilibrium approach, the one-dimensional model of the solute diffusion during rapid solidification of the binary alloy in the semi-infinite volume is considered. Within the scope of the model it is supposed that mass transport is described by the telegrapher equation. The basic assumption concerns the behavior of the diffusion flux and the solute concentration at the interface. Under the condition that these quantities are given by the superposition of the exponential functions the solutions of the telegrapher equation determining the flux and the solute distributions…
The magnetic properties and transition from an antiferromagnetic (AFM) to a ferromagnetic (FM) state in semi Heusler alloys Cu1-xNixMnSb, with x < 0.3 have been investigated in details by dc magnetization, neutron diffraction, and neutron depolarization. We observe that for x < 0.05, the system Cu1-xNixMnSb is mainly in the AFM state. In the region 0.05 \leq x \leq 0.2, with decrease in temperature, there is a transition from a paramagnetic to a FM state and below ~50 K both AFM and FM phases coexist. With an increase in Ni substitution, the FM phase grows at the expense of the AFM phase and f…
Using a first-principles band-structure method and a special quasirandom structure (SQS) approach, we systematically calculate the band gap bowing parameters and \emph{p}-type doping properties of (Zn, Mg, Be)O related random ternary and quaternary alloys. We show that the bowing parameters for ZnBeO and MgBeO alloys are large and dependent on composition. This is due to the size difference and chemical mismatch between Be and Zn(Mg) atoms. We also demonstrate that adding a small amount of Be into MgO reduces the band gap indicating that the bowing parameter is larger than the band-gap differe…
Employing $ab$ $intito$ electronic structure calculations, we have investigated electronic and magnetic properties of the Zr-based quanternary Heusler alloys: ZrCoVIn, ZrFeVGe, ZrCoFeP, ZrCoCrBe and ZrFeCrZ (Z=In and Ga). Our $ab$ $intito$ calculation results show that all the alloys are (or nearly) spin-gapless semiconductors. All the alloys have large band gaps, indicating the stability of them at room temperature. The Slater-Pauling behaviours of these alloys are discussed as well. The values of Curie temperature of all the alloys are estimated. And it is found that the values of the Curie …
We observe that pressure-induced amorphization of Ga2SeTe2 (a III-VI semiconductor) is directly influenced by the periodicity of its intrinsic defect structures. Specimens with periodic and semi-periodic two-dimensional vacancy structures become amorphous around 10-11 GPa in contrast to those with aperiodic structures, which amorphize around 7-8 GPa. The result is a notable instance of altering material phase-change properties via rearrangement of stoichiometric vacancies as opposed to adjusting their concentrations. Based on our experimental findings, we posit that periodic two-dimensional va…
The band gap engineering of group IV semiconductors has not been well explored theoretically and experimentally, except for SiGe. Recently, GeSn has attracted much attention due to the possibility of obtaining a direct band gap in this alloy, thereby making it suitable for light emitters. Other group IV alloys may also potentially exhibit material properties useful for device applications, expanding the space for band gap engineering in group IV. In this work the electronic band structure of all group IV semiconductor alloys is investigated. Twelve possible A:B alloys, where A is a semiconduct…
This paper studies short-range order (SRO) in the semiconductor alloy (GaN)$_{1-x}$(ZnO)$_x$. Monte Carlo simulations performed on a density functional theory (DFT)-based cluster expansion model show that the heterovalent alloys exhibit strong SRO because of the energetic preference for the valence-matched nearest-neighbor Ga-N and Zn-O pairs. To represent the SRO-related structural correlations, we introduce the concept of Special Quasi-ordered Structure (SQoS). Subsequent DFT calculations reveal dramatic influence of SRO on the atomic, electronic and vibrational properties of the (GaN)$_{1-x…
Si$_{y}$Ge$_{1-x-y}$(C,Sn,Pb)$_{x}$ alloys have attracted significant attention as a route to achieve a direct-gap group-IV semiconductor. Using density functional theory (DFT) - employing local density approximation and hybrid Heyd-Scuzeria-Ernzerhof exchange-correlation functionals - we compute the lattice parameters, relaxed and inner elastic constants, and internal strain (Kleinman) parameters for elemental (diamond) group-IV materials and zinc blende IV-IV compounds. Our DFT calculations support a little-known experimental re-evaluation of the $α$-Sn elastic constants, and contradict a re…
A total of 5 different half-Heusler alloys, two p-type and two n-type with the fifth a charge compensated alloy have been designed and synthesized. The thermophysical properties of these alloys have been investigated in the range 10 K to 1000 K while the magnetic behavior has been studied up to 300 K. The electrical resistivity of all the alloys varies within the range 0.06 to 5 mΩ cm indicating that they are in the degenerate semiconductor limits. The temperature dependence of p-type alloys exhibits a transition from metallic to semiconducting behavior, typical of topological insulators. The …
A brief survey of experimental and theoretical studies of half-metallic ferromagnets (HMFs) and spin gapless semiconductors is given, the possible candidates being the X$_2$YZ (X = Mn, Fe, Co; Y = Ti, V, Cr, Mn, Fe, Co, Ni; Z = Al, Si, Ga, Ge, In, Sn, Sb) Heusler alloys. The data on the electrical resistivity, normal and anomalous Hall Effect, and magnetic properties are presented. It is shown that the Co$_2$FeZ alloys demonstrate properties of conventional ferromagnets, the HMF properties being also manifested at the variation of the Z-component. The Fe$_2$YAl and Mn$_2$YAl alloys show at the…
Structural and thermoelectric properties of metallic and semiconducting Sb2Te3 are reported. X-Ray diffraction and Raman spectroscopy studies reveal that semiconducting sample have higher defect density. Nature and origin of possible defects are highlighted. Semiconducting Sb2Te3 hosts larger numbers of defects, which act as scattering center and give rise to the increased value of resistivity, thermopower and power factor. Thermopower data indicates p-type nature of the synthesized samples. It is evidenced that the surface states are often mixed with the bulk state, giving rise to metallicity…
We propose a simple and effective approach to construct the empirical tight-binding parameters of ternary alloys in the virtual crystal approximation. This combines a new, compact formulation of the strain parameters and a linear interpolation of the hamiltonians of binary materials strained to the alloy equilibrium lattice parameter. We show that it is possible to obtain a perfect description of the bandgap bowing of ternary alloys in the InGaAsSb family of materials. Furthermore, this approach is in a good agreement with supercell calculations using the same set of parameters. This scheme op…
A review of theoretical and experimental studies of the electronic structure, electronic and magnetic properties of various systems of Heusler alloys in the states of a half-metallic ferromagnet, a spin gapless semiconductor, and a topological semimetal is presented. These substances have unusual, highly sensitive to external influences, magnetic and electronic characteristics, which is associated with the presence of energy gaps and exotic excitations in them. The features of the behavior and evolution of the electronic structure and properties in each of these states, as well as during the t…
Shining light on short-range atomic ordering in semiconductors alloys
Stanford University（斯坦福大学）；SLAC National Accelerator Laboratory（斯坦福直线加速器中心）；George Washington University（乔治华盛顿大学）；National Institute of Standards and Technology（美国国家标准与技术研究院）；University of California Berkeley（加州大学伯克利分校）；Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室）；Max Planck Institute for Sustainable Materials（马克斯·普朗克可持续材料研究所）
Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this paper, we investigate the band structure-related mechanisms that influence impact ionization. Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated.
A series of III-V ternary and quarternary digital alloy avalanche photodiodes (APDs) have recently been seen to exhibit very low excess noise. Using band inversion of an environment-dependent atomistic tight binding description of short period superlattices, we argue that a combination of increased effective mass, minigaps and band split-off are primarily responsible for the observed superior performance. These properties significantly limit the ionization rate of one carrier type, either holes or electrons, making the avalanche multiplication process unipolar in nature. The unipolar behavior …
A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor alloy heterostructures. The parameters of an eight-band kp-Hamiltonian are fitted to the effective band structure of an appropriate alloy. The envelope function approach is applied to model the quantum well using the kp-wave functions and eigenvalues as starting point for calculating the optical properties of the heterostructure. It is shown that Luttinger p…
For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A(x)B(1-x)C can be realized. As the electronic properties like the bulk band gap vary continuously with x, any band gap in between that of the pure AC and BC systems can be obtained by choosing the appropriate concentration x, granted that the respective ratio is miscible and thermodynamically stable. In most cases the band gap does not vary linearly with x, but a pronounced bowing behavior as a function of the concentration is observed. In this paper we s…
Despite a plethora of materials suggested for spintronic applications, a new class of materials has emerged, namely spin gapless semiconductors (SGS), that offers potentially more advantageous properties than existing ones. These magnetic semiconductors exhibit a finite band gap for one spin channel and a closed gap for the other. Here, supported by the first-principles, electronic-structure calculations, we report the first experimental evidence of SGS behavior in equiatomic quaternary CoFeCrGa, having a cubic Heusler (L21) structure but exhibiting chemical disorder (DO3 structure). CoFeCrGa …
The (Cd, Be)Te semiconductor alloy that exhibits a dramatic mismatch in bond covalency and stiffness clarifying its vibrational and mechanical properties is used as a benchmark to test the limits of the percolation model (PM) worked out to explain the complex Raman spectra of the related but less contrasted (Zn, Be) chalcogenides. The test is done by way of experiment (x smaller than 0.11) combining Raman scattering with X ray diffraction at high pressure and ab initio calculations (x around 0, 0.5 and 1). The (macroscopic) bulk modulus B drops below the CdTe value on minor Be incorporation, a…
Inspired by the unique properties of graphene, the focus in the literature is now on investigations of various two-dimensional (2D) materials with the aim to explore their properties for future applications. The group IV analogues of graphene, i.e., silicene, germanene and stanene have been intensively studied in recent years. However, their semi-metallic band structures hamper their use in electronic applications. Hence, the synthesis of 2D materials with band gaps of various sizes has attracted a large interest. Here, we report a successful preparation of a 2D Te-Ag binary alloy with a honey…
Pressure-induced transitions from ordered intermetallic phases to substitutional alloys to semi-ordered phases were studied in a series of bismuth tellurides. Using angle-dispersive x-ray diffraction, the compounds Bi4Te5, BiTe, and Bi2Te were observed to form alloys with the disordered body-centered cubic (bcc) crystal structure upon compression to above 14--19 GPa at room temperature. The BiTe and Bi2Te alloys and the previously discovered high-pressure alloys of Bi2Te3 and Bi4Te3 were all found to show atomic ordering after gentle annealing at very moderate temperatures of ~100°C. Upon anne…
