The negative Hall constant R_H measured all over the phase diagram of Ba(Fe(1-x)Cox)2As2 allows us to show that electron carriers always dominate the transport properties. The evolution of R_H with x at low doping (x<2%) indicates that important band structure changes happen for x<2% prior to the emergence of superconductivity. For higher x, an change of the electron concentration with T is required to explain the low T variations of R_H, while the electron scattering rate displays the T^2 law expected for a Fermi liquid. The T=0 residual scattering is affected by Co disorder in the magnetic phase, but is rather dominated by incipient disorder in the paramagnetic state.
Carrier-doping effect and anomalous transport properties in Ni-doped CeCoIn5 investigated by Hall resistivity measurements
College of Science, Ibaraki University（茨城大学理学部）；Institute for Solid State Physics, The University of Tokyo（东京大学固体物理研究所）；Institute for Materials Research, Tohoku University（东北大学材料科学高等研究所）；Faculty of Education, Shinshu University（信州大学教育学部）
The in-plane anisotropy of resistivity has been investigated for Ba(Fe$_{1-x}$TM$_{x}$)$_2$As$_2$ (TM-Ba122, TM$=$Cr, Mn, and Co) where the substitution sites are the same but the doped carriers are different for different TM elements. The Hall coefficient measurements indicated that hole carriers are effectively doped by Cr substitution but not by Mn substitution. It has been found that the resistivity difference $Δρ=ρ_{\rm b}-ρ_{\rm a}$ in the antiferromagnetic-orthorhombic (AFO) phase of Cr-Ba122 is initially positive but it turns to negative with increasing Cr content, whereas the positive…
High-temperature superconducting cuprates are distinguished by an enigmatic pseudogap which opens near optimal doping where the superconducting transition temperature is highest. Key questions concern its origin and whether it is essential in any way to superconductivity. Recent field-induced normal-state transport experiments on hole-doped cuprates have measured abrupt changes in the doping dependent Hall number and resistivity, consistent with a drop in carrier density from $1+p$ to $p$ holes per copper atom, on entering the pseudogap phase. In this work the change in resistivity is analyzed…
We theoretically examine anisotropy of in-plane resistivity in the striped antiferromagnetic phase of an iron arsenide superconductor by applying a memory function approach to the ordered phase with isotropic nonmagnetic impurity. We find that the anisotropy of the scattering rate is independent of carrier density when the topology of the Fermi surface is changed after the introduction of holes. On the other hand, the anisotropy of the Drude weight monotonically decreases reflecting the distortion of the Dirac Fermi surface and eventually leads to the reverse of anisotropy of resistivity, bein…
In-plane resistivity anisotropy was measured in strain-detwinned as-grown and partially annealed samples of isovalently-substituted $\mathrm{Ba(Fe_{1-x}Ru_{x})_{2}As_{2}}$ ($0<x \leq 0.125$) and the results were contrasted with previous reports on anneal samples with low residual resistivity. In samples with high residual resistivity, detwinned with application of strain, the difference of the two components of in-plane resistivity in the orthorhombic phase, $ρ_a -ρ_b$, was found to obey Matthiessen rule irrespective of sample composition, which is in stark contrast with observations on anneal…
We systematically investigated the anisotropic in-plane resistivity of the iron telluride including three kinds of impurity atoms: excess Fe, Se substituted for Te, and Cu substituted for Fe. Sizable resistivity anisotropy was found in the magneto-structurally ordered phase whereas the sign is opposite ($ρ_a$ $>$ $ρ_b$, where the $b$-axis parameter is shorter than the $a$-axis one) to that observed in the transition-metal doped iron arsenides ($ρ_a$ $<$ $ρ_b$). On the other hand, our results demonstrate that the magnitude of the resistivity anisotropy in the iron tellurides is correlated with …
The resistivity $ρ$ and Hall resistivity $ρ_H$ are measured on FeSe at pressures up to $P$ = 28.3 kbar in magnetic fields up to $B$ = 14.5 T. The $ρ(B)$ and $ρ_H(B)$ curves are analyzed with multicarrier models to estimate the carrier density and mobility as a function of $P$ and temperature ($ T\leqslant$ 110 K). It is shown that the pressure-induced antiferromagnetic transition is accompanied by an abrupt reduction of the carrier density and scattering. This indicates that the electronic structure is reconstructed significantly by the antiferromagnetic order.
We present the results of electrical transport measurements of La$_{1.85}$Sr$_{0.15}$Cu$_{1-y}$Ni$_{y}$O$_{4}$ thin single-crystal films at magnetic fields up to 9 T. Adding Ni impurity with strong Coulomb scattering potential to slightly underdoped cuprate makes the signs of resistivity saturation at $ρ_{sat}$ visible in the measurement temperature window up to 350 K. Employing the parallel-resistor formalism reveals that $ρ_{sat}$ is consistent with classical Ioffe-Regel-Mott limit and changes with carrier concentration $n$ as $ρ_{sat}\propto 1/\sqrt{n}$. Thermopower measurements show that N…
Scattering among electrons generates a distinct contribution to electrical resistivity that follows a quadratic temperature dependence. In strongly-correlated electron systems, the prefactor A of this T$^2$ resistivity scales with the magnitude of the electronic specific heat. Here, we show that one can change the magnitude of A by four orders of magnitude in metallic SrTiO3 by tuning the concentration of the carriers and consequently, the Fermi energy. The T$^2$ behavior persists in the single-band dilute limit despite the absence of two known mechanisms for T$^2$ behavior, distinct electron …
We report extensive resistivity, Hall, and magnetoresistance measurements on thin films of the electron-doped cuprate \PCCO~(PCCO), as a function of doping, temperature and magnetic field. The doping dependence of the resistivity and Hall number at low temperatures are characteristic of a system near a quantum phase transition or a Fermi Surface Reconstruction (FSR) point. The spin magnetoresistance drops to zero near the critical point. The data presented in this paper were compiled during the 2004-2007 period but were never published in this comprehensive form. Because of the recent interest…
A variety of "strange metals" exhibit resistivity that decreases linearly with temperature as $T\rightarrow 0$, in contrast with conventional metals where resistivity decreases as $T^2$. This $T$-linear resistivity has been attributed to charge carriers scattering at a rate given by $\hbar/τ=αk_{\rm B} T$, where $α$ is a constant of order unity. This simple relationship between the scattering rate and temperature is observed across a wide variety of materials, suggesting a fundamental upper limit on scattering---the "Planckian limit"---but little is known about the underlying origins of this l…
Electrical transport measurements are used to study the Rh-doped NaFeAs superconductor series with a focus on the tetragonal phase. The resistivity curvature has an anomalous temperature dependence evidencing in the phase diagram two crossover regions of changes in the scattering rate, the effective mass as well as of the charge carrier density. The first crossover region is directly connected to the structural transition and resembles the onset of resistivity anisotropy. The second crossover region can as well be deduced from the temperature dependent Hall coefficient. A comparison to literat…
Weyl semimetals, characterized by nodal points in the bulk and Fermi arc states on the surface, have recently attracted extensive attention due to the potential application on low energy consumption electronic materials. In this report, the thermodynamic and transport properties of a theoretically predicted Weyl semimetal NbIrTe4 is measured in high magnetic fields up to 35 T and low temperatures down to 0.4 K. Remarkably, NbIrTe4 exhibits a nonsaturating transverse magnetoresistance which follows a power-law dependence in B. Low-field Hall measurements reveal that hole-like carriers dominate …
Observation of a Universial Low Temperature Limit of the Free Flux Flow Resistivity in Superclean Bi_2Sr_2CaCu_2O_8 Whiskers
我们报道了洁净Bi $_2$ Sr $_2$ CaCu $_2$ O $_8$单晶中特有的涡旋运动，它揭示了几乎线性的$T$电阻率尾向低温延伸。电阻率被发现，以满足经典的Bardeen-Stephen模型的自由磁通量流动，否则很难观察到在正常的实验条件下，在高- $T_c$铜酸盐。此外，在超净制度，一个普遍的温度无关的磁通流电阻率值，观察到，$ρ_f = 1.4(B-B^*)$。我们解释这种载流子弛豫{ \it独立}行为与涡核内的minigap状态引起的耗散有关。结果与理论计算（N. B. Kopnin和G. E. Volovik，Phys. Rev. Lett. { \bf 79}，1377（1997））。
Doping dependence of upper critical field and Hall resistivity in LaFeAsO1-xFx
用60 T脉冲磁体测量了LaFeAsO_（1-x）Fx在0 =< x =< 0.14范围内的电阻率（Rxx）和霍尔电阻率（Rxy）。虽然超导相图（Tc，x）显示了经典的圆顶形结构，我们发现，电阻上临界场（Hc 2）单调增加，随着氟浓度的降低，与最大的Hc 2>= 75 T x = 0.05。这让人想起在高Tc的铜酸盐的组合物的依赖性，并可能与开放的一个伪间隙中的欠掺杂区域。此外，超导样品的Hc 2（T）的温度依赖性可以根据多带超导性来理解。非超导样品的Rxy数据显示出非线性场依赖性，这也与多载波情况一致。
We report the crystal structures and physical properties of trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$. Measurements of magnetization and electrical resistivity display contrasting behaviors in the two compounds. Nd$_4$Ni$_3$O$_{10}$ shows a paramagnetic metallic behavior with a metal to metal phase transition($T^{\ast}$) at about 162 K, as revealed by both magnetic susceptibility and resistivity. Further magnetoresistance and Hall coefficient results show a negative magnetoresistance at low temperatures and the carrier type of Nd$_4$Ni$_3$O$_{10}$ is dominated by hole-type…
Effect of doping on the magnetostructural ordered phase of iron arsenides: A comparative study of the resistivity anisotropy in the doped BaFe$_2$As$_2$ with doping into three different sites
为了揭示掺杂在铁基超导体中的作用，我们研究了BaFe $_2$ As $_2$在三个不同晶格位置中的任意一个上掺杂的面内电阻率，Ba（Fe $_{1-x}$ Co $_x$）$_2$ As $_2$，BaFe $_2$（As $_{1-x}$ P $_x$）$_2$和Ba $_{1-x}$ K $_x$ Fe $_2$ As $_2$，重点研究了低温反铁磁/斜方晶（AFO）相的掺杂效应。已知高温顺磁/四磁（PT）相中掺杂的主要作用是通过提供载流子或通过施加化学压力来改变费米表面。在AFO阶段，我们发现了一个明确的剩余电阻率和电阻率各向异性的大小之间的相关性。这表明电阻率各向异性源于掺杂原子的各向异性杂质散射。剩余电阻率的大小也是控制AFO有序化温度$T_s$抑制率的参数。因此，AFO相中掺杂的主要作用是向体系引入无序，这与PT相中的无序不同。
We report the effects of Ce substitution on structural, electronic, and magnetic properties of layered bismuth-chalcogenide La1-xCexOBiSSe (x = 0-0.9), which are newly obtained in this study. Metallic conductivity was observed for x > 0.1 because of electron carriers induced by mixed valence of Ce ions, as revealed by bond valence sum calculation and magnetization measurements. Zero resistivity and clear diamagnetic susceptibility were obtained for x = 0.2-0.6, indicating the emergence of bulk superconductivity in these compounds. Dome-shaped superconductivity phase diagram with the highest tr…
Large-bipolaron superconductivity is plausible with carrier densities well below those of conventional metals. Bipolarons form when carriers self-trap in pairs. Coherently moving large-bipolarons require extremely large ratios of static to optical dielectric-constants. The mutual Coulomb repulsion of a planar large-bipolarons paired carriers drives it to a four-lobed shape. A phonon-mediated attraction among large-bipolarons propels their condensation into a liquid. This liquids excitations move slowly with a huge effective mass. Excitations concomitant weak scattering by phonons produces a mo…
The fate of electric dipoles inside a Fermi sea is an old issue, yet poorly-explored. Sr$_{1-x}$Ca$_x$TiO$_{3}$ hosts a robust but dilute ferroelectricity in a narrow ($0.002<x<0.02$) window of substitution. This insulator becomes metallic by removal of a tiny fraction of its oxygen atoms. Here, we present a detailed study of low-temperature charge transport in Sr$_{1-x}$Ca$_x$TiO$_{3-δ}$, documenting the evolution of resistivity with increasing carrier concentration ($n$). Below a threshold carrier concentration, $n^*(x)$, the polar structural phase transition has a clear signature in resisti…
