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arXiv 1503.02467cond-mat.str-elcond-mat.supr-con

欠掺杂铜氧化物中杂质诱导的电阻率上翘

Impurity induced resistivity upturns in underdoped cuprates

Theoretical Physics Division, Physical Research Laboratory(物理研究实验室理论物理部)

Nabyendu Das, Navinder Singh Bathinda

AI总结:

针对欠掺杂铜氧化物赝能隙态下杂质诱导的电阻率低温上翘现象,本研究在Yang-Rice-Zhang唯象模型中纳入杂质散射,结合最低阶玻恩近似与Kubo公式计算,解释了该现象及掺杂演化规律,验证了强电子关联的作用。

摘要:

实验已观测到赝能隙态下铜氧化物的ab面和c轴直流电阻率均存在杂质诱导的低温上翘现象。我们通过在Yang-Rice-Zhang(杨-赖斯-张)唯象模型中纳入该区域电荷载流子的杂质散射,对这一现象给出了解释。载流子与杂质原子间的散射采用最低阶玻恩近似进行处理,电阻率则通过Kubo公式利用杂质重整化的谱函数计算得出。使用铜氧化物的物理参数,我们描述了上翘现象的定性特征及其掺杂演化规律,结果与实验发现一致,并强调了强电子关联的作用。

英文摘要:

Impurity induced low temperature upturns in both the ab-plane and the c-axis dc-resistivities of cuprates in the pseudogap state have been observed in experiments. We provide an explanation of this phenomenon by incorporating impurity scattering of the charge carriers within a phenomenological model by Yang-Rice-Zhang in this regime. The scattering between charge carriers and the impurity atom is considered within the lowest order Born approximation. Resistivity is calculated within Kubo formula using the impurity renormalized spectral functions. Using physical parameters for cuprates, we describe qualitative features of the upturn phenomena and its doping evolution that coincides with the experimental findings and we stress the role of strong electronic correlations.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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