We have measured the magnetotransport properties and Hall effect of a series of epitaxial NbN films grown on (100) oriented single crystalline MgO substrate under different conditions using reactive magnetron sputtering. Hall effect measurements reveal that the carrier density in NbN thin films is sensitive to the growth condition. The carrier density increases by a factor of 3 between the film with highest normal state resistivity (rho_n~3.83micro-Ohm-m) and lowest transition temperature (Tc~9.99K) and the film with lowest normal state resistivity (rho_n~0.94micro-Ohm-m) and highest transition temperature (Tc~16.11K) while the mobility of carriers does not change significantly except for the most resistive films. Our results show that the Tc of NbN is governed primarily by the carrier density rather than disorder scattering. By varying the carrier concentration during growth we can vary the effective disorder (kF_l) from the moderately clean limit to the dirty limit which makes this system ideal to study the interplay of carrier density and disorder on the superconducting properties of an s-wave superconductor.
We report the evolution of superconducting properties with disorder, in 3-dimensional homogeneously disordered epitaxial NbN thin films. The effective disorder in NbN is controlled from moderately clean limit down to Anderson metal-insulator transition by changing the deposition conditions. We propose a phase diagram for NbN in temperature-disorder plane. With increasing disorder we observe that as kFl-->1 the superconducting transition temperature (Tc) and minimum conductivity (sigma_0) go to zero. The phase diagram shows that in homogeneously disordered 3-D NbN films, the metal-insulator tra…
High quality epitaxial NbN/MgO/NbN Josephson junctions have been realized with MgO barriers up to a thickness of d=1 nm. The junction properties coherently scale with the size of barrier, and low critical current densities down to 3 A/cm$^2$ have been achieved for larger barriers. In this limit, junctions exhibit macroscopic quantum phenomena for temperatures lower than 90 mK. Measurements and junction parameters support the notion of a possible use of these devices for multiphoton quantum experiments, taking advantage of the fast non equilibrium electron-phonon relaxation times of NbN.
We have developed a novel fabrication process for ultra-small, full-epitaxial NbN Josephson junctions on a silicon (Si) substrate. A full-epitaxial NbN/AlN/NbN tri-layer was grown on a Si (100) wafer with a (200)-oriented TiN buffer layer. It was patterned into Josephson junctions by an electron beam lithography (EBL) for junction definition followed by a reactive ion etch (RIE). A chemical mechanical polishing (CMP) process and an additional RIE by using CHF$_3$ gas formed reliable electrical contacts between the junction counter electrodes and the wiring layer. All fabricated junctions, with…
We report an unconventional and promising route to self-assemble distributed superconductor-ferromagnet-superconductor (S-F-S) Josephson Junctions on single crystal [100] MgO. These structures consist of [110] epitaxial nano-plaquettes of Fe covered with superconducting NbN films of varying thickness. The S-F-S structures are characterized by strong magnetoresistance (MR) anisotropy for the in-plane and out-of-plane magnetic fields. The stronger in-plane MR suggests decoherence of S-F-S junctions whose critical current follows a (1-T/Tc) and (1-T/Tc)1/2 dependence for T Tc and T<<Tc respective…
Epitaxial NbN-junction-based self-shunted superconducting flux qubit with high anharmonicity
Tohoku University（东北大学）；RIKEN Center for Quantum Computing（理化学研究所量子计算中心）；The University of Tokyo（东京大学）；Inamori Research Institute for Science (InaRIS)（稻盛科学研究所）；National Institute of Information and Communications Technology (NICT)（信息通信研究机构）
The electronic structure of heterointerfaces play a pivotal role in their device functionality. Recently, highly crystalline ultrathin films of superconducting NbN have been integrated by molecular beam epitaxy with the semiconducting GaN. We use soft X-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures for both NbN and GaN constituents of this Schottky heterointerface, and determine their momentum-dependent interfacial band offset as well as the band-bending profile into GaN. We find, in particular, that the Fermi states in NbN a…
We investigate evolution of the magnetic penetration depth and superconducting energy gap in epitaxial NbN films using a low frequency mutual inductance technique and tunneling spectroscopy using a low temperature scanning tunneling microscope (STM). The superconducting transition temperature (Tc) for films grown under optimal growth conditions decreases monotonically from 15.87K to 9.16K as the film thickness is decreased from 50nm to 3nm. With decrease in film thickness delta(0) monotonically decreases, whereas lambda(0) monotonically increases. We observe that Tc, lambda(o) and delta(0) are…
We report the temperature dependence of resistivity (rho) and Hall coefficient (R_H) in the normal state of homogeneously disordered epitaxial NbN thin films with kFl~3.27-10.12. The superconducting transition temperature (Tc) of these films varies from 8.13K to 16.8K. While our least disordered film displays usual metallic behavior, for all the films with kFl<8.13, both and are negative up to 300K. We observe that R_H(T) varies linearly with rho(T) for all the films. Measurements performed on a 2nm thick Be film shows similar behavior >. This behavior is inconsistent with existing theories of…
Improving the coherence of superconducting qubits is a fundamental step towards the realization of fault-tolerant quantum computation. However, coherence times of quantum circuits made from conventional aluminium-based Josephson junctions are limited by the presence of microscopic two-level systems in the amorphous aluminum oxide tunnel barriers. Here, we have developed superconducting qubits based on NbN/AlN/NbN epitaxial Josephson junctions on silicon substrates which promise to overcome the drawbacks of qubits based on Al/AlO$_{x}$/Al junctions. The all-nitride qubits have great advantages …
We report the evolution of superconducting properties as a function of disorder in homogeneously disordered epitaxial NbN thin films grown on (100) MgO substrates, studied through a combination of electrical transport, Hall Effect and tunneling measurements. The thickness of all our films are >50nm much larger than the coherence length ~5nm. The effective disorder in different films encompasses a large range, with the Ioffe-Regel parameter varying in the range kFl~1.38-8.77. Tunneling measurements on films with different disorder reveals that for films with large disorder the bulk superconduct…
We present a comprehensive study of how superconducting fluctuations in the normal state contribute to the conductivity tensor in a thin (119 $Å$) film of NbN. It is shown how these fluctuations drive a sign change in the Hall coefficient $R_\mathrm{H}$ for low magnetic fields near the superconducting transition. The scaling behaviours as a function of distance to the transition $ε=\ln(T/T_\mathrm{c})$ of the longitudinal ($σ_\mathrm{xx}$) and transverse ($σ_\mathrm{xy}$) conductivity is found to be consistent with Gaussian fluctuation theory. Moreover, excellent quantitative agreement between…
We report vortex matching phenomenon in rectangular antidot array fabricated on epitaxial NbN thin film. The antidot array was fabricated using Focussed Ion Beam milling technique. The magneto-transport measurements points to a period doubling transition at higher magnetic field for rectangular lattices. The results are discussed within the light of several models including the multi-vortex model, the matched lattice model and the super-matched lattice model.
Using a single coil mutual inductance technique, we measure the low temperature dependence of the magnetic penetration depth in superconducting NbN films prepared with similar critical temperatures around 16 K but with different microstructures. Only (100) epitaxial and weakly granular (100) textured films display the characteristic exponential dependence of conventional BCS s-wave superconductors. More granular (111) textured films exhibit a linear dependence, indicating a gapless state in spite of the s-wave gap. This result is quantitatively explained by a model of thermal phase fluctuation…
NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the film are characterized to demonstrate that growth parameters such as substrate temperature and active nitrogen flux effect the structural phase of films, and thereby the superconducting critical temperature. Four phases of NbN are identified for films grown in different conditions. In a novel finding, we demonstrate that atomically flat and highly crystalline $β$-$\textrm{Nb}_2\textrm{N}$ films can be grown at substrate temperatures of 1100 \degree C or higher, and…
We present transport, Hall effect, electronic tunnelling and penetration depth studies in 3D homogeneously disordered epitaxial NbN thin films with disorder ranging from the moderately clean limit (k_Fl~10.12) to the very dirty limit (k_Fl~1.24). The superconducting transition temperature (T_c) decreases from ~17K to less than 350mK with increasing disorder. The T_c and conductivity at the lowest temperature both asymptotically approach zero as k_Fl tends to 1, indicating a coincidence of the metal-insulator transition (MIT) and the superconductor-insulator transition. Close to critical disord…
Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater than 1000$^\circ$C, higher than in the past, is found to reveal persistent RHEED oscillations throughout the growth, atomically smooth surfaces, normal metal resistivities as low as 37$μΩ$-cm and superconducting critical temperatures in excess of 15 K. Most remarkably, a reversal of the sign of the Hall coefficient is observed as the NbN films are coo…
We report resistivity, Hall coefficient, current-voltage characteristics, and magneto-optical imaging measurements of epitaxial Co-doped BaFe_{2}As_{2} thin films deposited on MgO(001) substrate. The Hall resistivity of the films has a substantial contribution arising from anomalous Hall effect of ferromagnetic components. The critical current density (J_{c}) of the films is ~2 MA/cm^{2} at low temperatures. Differential magneto-optical images of the remanent state give similar J_{c} values and also exhibit presence of extended defects in the film.
Epitaxial niobium-nitride thin films with a critical temperature of Tc=16K and a thickness of 100nm were fabricated on MgO(100) substrates by pulsed laser deposition. Low-temperature magnetic force microscopy (MFM) images of the supercurrent vortices were measured after field cooling in a magnetic field of 3mT at various temperatures. Temperature dependence of the penetration depth has been evaluated by a two-dimensional fitting of the vortex profiles in the monopole-monopole model. Its subsequent fit to a single s-wave gap function results in the superconducting gap amplitude Delta(0) = 2.9 m…
The mixed-state Hall effect was examined in a Ba(Fe1-xCox)2As2 epitaxial film with a high critical current density. The transverse resistivity ρxy and the longitudinal resistivity ρxx follow power law scaling ρxy = Aρxxβ. In the temperature-sweep with a fixed field (T sweep), all of the β values are independent of magnetic field up to 9 T, and are lower than 2.0 (around 1.8). In contrast, the β values in the magnetic-field sweep with a fixed temperature (H sweep) change from 1.8 to 2.0 as the temperature increases from 13 to 16 K even in the T/H region that overlaps with the T sweep measuremen…
We theoretically investigate the vortex spin Hall effect, i.e., a novel spin Hall effect driven by the motion of superconducting vortices, by focusing on the role of superconducting fluctuations. Within the BCS-Gor'kov microscopic approach combined with the Kubo formula, we find a strong similarity between the vortex spin Hall effect and the vortex Nernst/Ettingshausen effect. Calculated temperature dependence of the voltage signal due to the inverse vortex spin Hall effect exhibits a strong enhancement by vortex fluctuations. This result not only provides a possible explanation for a prominen…
Measurements of Nernst effect, resistivity and Hall angle on epitaxial films of Y$_{1-x}$Pr$_x$Ba$_2$Cu$_3$O$_{7-δ}$(Pr-YBCO, 0$\leq x\leq$0.4) are reported over a broad range of temperature and magnetic field. While the Hall and resistivity data suggest a broad pseudogap regime in accordance with earlier results, these first measurements of the Nernst effect on Pr-YBCO show a large signal above the superconducting transition temperature(T$_c$). This effect is attributed to vortex-like excitations in the phase incoherent condensate existing above T$_c$. A correlation between disorder and the w…
The quantum Hall (QH) effect supports a set of chiral edge states at the boundary of a 2-dimensional electron gas (2DEG) system. A superconductor (SC) contacting these states induces correlation of the quasi-particles in the dissipationless 1D chiral QH edge states. If the superconducting electrode is narrower than the superconducting coherence length, the incoming electron are correlated to outgoing hole along the chiral edge state by the Andreev process. In order to realize this crossed Andreev conversion (CAC), it is necessary to fabricate highly transparent and nanometer-scale superconduct…
We report on the synthesis and transport properties of perovskite (Pv) CaIrO3 thin films. The Pv phase of CaIrO3 was stabilized by epitaxial growth on SrTiO3, (LaAlO3)0.3(Sr2AlTaO6)0.7, and LaAlO3 substrates with strong tensile, weak tensile, and compressive strains, respectively. The resistivity of these films showed a poorly metallic behavior. The Hall resistivity exhibited a sign change as a function of temperature and a nonlinear magnetic-field dependence, which clearly indicated the coexistence of electrons and holes and hence supported that Pv CaIrO3 films are semimetallic. The observed …
Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunneling conductance below the superconducting gap, suggesting…
We report magnetotransport measurements in the NbN/ magnetic topological insulator MnBi2Te4 (MBT)/ NbN junction at low temperature. At 10 mK, the nonlinear current-voltage characteristic of the junction shows a tunneling behavior, indicating the existence of interfacial potential barriers within the heterostructure. Under an out of plane perpendicular magnetic field, a transition from negative to positive magnetoresistance (MR) is found when increasing the bias voltage. A proximity-induced superconducting gap is estimated to be 0.1meV by a pair of differential resistance dips. Moreover, the in…
