Quantum crossover in moderately damped epitaxial NbN/MgO/NbN junctions with low critical current density
Luigi Longobardi, Davide Massarotti, Giacomo Rotoli, Daniela Stornaiuolo, Gianpaolo Papari, Akira Kawakami, Giovanni Piero Pepe, Antonio Barone, Francesco Tafuri
High quality epitaxial NbN/MgO/NbN Josephson junctions have been realized with MgO barriers up to a thickness of d=1 nm. The junction properties coherently scale with the size of barrier, and low critical current densities down to 3 A/cm$^2$ have been achieved for larger barriers. In this limit, junctions exhibit macroscopic quantum phenomena for temperatures lower than 90 mK. Measurements and junction parameters support the notion of a possible use of these devices for multiphoton quantum experiments, taking advantage of the fast non equilibrium electron-phonon relaxation times of NbN.
We report on the occurrence of multiple hopping and retrapping of a Brownian particle in a tilted washboard potential. The escape dynamic has been studied experimentally by measuring the switching current distributions as a function of temperature in a moderately damped NbN/MgO/NbN Josephson junction. At low temperatures the second moment of the distribution increases in agreement with calculations based on Kramers thermal activation regime. After a turn-over temperature T*, the shape of the distributions starts changing and width decreases with temperature. We analyze the data through fit of …
We present a new process for fabricating vertical NbN-MgO-NbN Josephson junctions using self-aligned silicon nitride spacers. It allows for a wide range of junction areas from 0.02 um^2 to several 100 um^2. At the same time, it is suited for the implementation of complex microwave circuits with transmission line impedances ranging from < 1 Ohm to > 1 kOhm. The constituent thin films and the finished junctions are characterized. The latter are shown to have high gap voltages (> 4 mV) and low sub-gap leakage currents.
We have developed a novel fabrication process for ultra-small, full-epitaxial NbN Josephson junctions on a silicon (Si) substrate. A full-epitaxial NbN/AlN/NbN tri-layer was grown on a Si (100) wafer with a (200)-oriented TiN buffer layer. It was patterned into Josephson junctions by an electron beam lithography (EBL) for junction definition followed by a reactive ion etch (RIE). A chemical mechanical polishing (CMP) process and an additional RIE by using CHF$_3$ gas formed reliable electrical contacts between the junction counter electrodes and the wiring layer. All fabricated junctions, with…
We report an unconventional and promising route to self-assemble distributed superconductor-ferromagnet-superconductor (S-F-S) Josephson Junctions on single crystal [100] MgO. These structures consist of [110] epitaxial nano-plaquettes of Fe covered with superconducting NbN films of varying thickness. The S-F-S structures are characterized by strong magnetoresistance (MR) anisotropy for the in-plane and out-of-plane magnetic fields. The stronger in-plane MR suggests decoherence of S-F-S junctions whose critical current follows a (1-T/Tc) and (1-T/Tc)1/2 dependence for T Tc and T<<Tc respective…
We report the evolution of superconducting properties with disorder, in 3-dimensional homogeneously disordered epitaxial NbN thin films. The effective disorder in NbN is controlled from moderately clean limit down to Anderson metal-insulator transition by changing the deposition conditions. We propose a phase diagram for NbN in temperature-disorder plane. With increasing disorder we observe that as kFl-->1 the superconducting transition temperature (Tc) and minimum conductivity (sigma_0) go to zero. The phase diagram shows that in homogeneously disordered 3-D NbN films, the metal-insulator tra…
Molecular beam epitaxy of K-doped Ba122 (Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$) superconductor was realized on a MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA/cm$^\text{2}$ at 4 K. The successful growth of epitaxial thin film will enable artificial single grain boundary on oxide bicrystal substrates and reveal the grain boundary transport nature of K-doped Ba122.
Epitaxial NbN-junction-based self-shunted superconducting flux qubit with high anharmonicity
Tohoku University（东北大学）；RIKEN Center for Quantum Computing（理化学研究所量子计算中心）；The University of Tokyo（东京大学）；Inamori Research Institute for Science (InaRIS)（稻盛科学研究所）；National Institute of Information and Communications Technology (NICT)（信息通信研究机构）
The electronic structure of heterointerfaces play a pivotal role in their device functionality. Recently, highly crystalline ultrathin films of superconducting NbN have been integrated by molecular beam epitaxy with the semiconducting GaN. We use soft X-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures for both NbN and GaN constituents of this Schottky heterointerface, and determine their momentum-dependent interfacial band offset as well as the band-bending profile into GaN. We find, in particular, that the Fermi states in NbN a…
We investigate evolution of the magnetic penetration depth and superconducting energy gap in epitaxial NbN films using a low frequency mutual inductance technique and tunneling spectroscopy using a low temperature scanning tunneling microscope (STM). The superconducting transition temperature (Tc) for films grown under optimal growth conditions decreases monotonically from 15.87K to 9.16K as the film thickness is decreased from 50nm to 3nm. With decrease in film thickness delta(0) monotonically decreases, whereas lambda(0) monotonically increases. We observe that Tc, lambda(o) and delta(0) are…
Improving the coherence of superconducting qubits is a fundamental step towards the realization of fault-tolerant quantum computation. However, coherence times of quantum circuits made from conventional aluminium-based Josephson junctions are limited by the presence of microscopic two-level systems in the amorphous aluminum oxide tunnel barriers. Here, we have developed superconducting qubits based on NbN/AlN/NbN epitaxial Josephson junctions on silicon substrates which promise to overcome the drawbacks of qubits based on Al/AlO$_{x}$/Al junctions. The all-nitride qubits have great advantages …
The biaxially textured growth of superconducting Co-doped BaFe2As2 (Ba-122) thin films has been realized on ion beam assisted deposition (IBAD) MgO coated conductor templates by employing an iron buffer architecture. The iron pnictide coated conductor showed a superconducting transition temperature of 21.5 K, which is slightly lower than that of Co-doped Ba-122 films on single crystalline MgO substrates. A self-field critical current density of over 10^5 A/cm2 has already been achieved even at 8 K. The current experiment highlights the potential of possible coated conductor applications of the…
We have investigated both the temperature and the power dependence of microwave losses for various dielectrics commonly used as substrates for the growth of High critical Temperature Superconductor thin films. We present measurement of niobium superconducting $λ/2$ coplanar waveguide resonators, fabricated on $La_{0.3}Sr_{0.7}Al_{0.65}Ta_{0.35}O_3$ (LSAT), $MgO$ (MgO) and $LaAlO_3$ (LAO), at the millikelvin temperature range and at low input power. By comparing our results with the Two-Level System (TLS) model, we have discriminated among different dominant loss mechanisms. LSAT has shown the …
Biaxially textured LuNi2BC thin films with Tc up to 15.8 K and a residual resistivity ratio up to 15 have been prepared. The films were deposited on MgO(110) substrates using pulsed laser deposition from a stoichiometric target. Via the precise control of the deposition rate, a biaxial texture is favored within a broad range of the deposition temperature. The full epitaxial relationship between the borocarbide film, the \luo interface layer and the substrate is (110)[001]MgO II (110)[001]Lu2O3 II (001)[100]LuNi2B2C. A very sharp in--plane alignment of about 1\textdegree and an out--of--plane o…
NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the film are characterized to demonstrate that growth parameters such as substrate temperature and active nitrogen flux effect the structural phase of films, and thereby the superconducting critical temperature. Four phases of NbN are identified for films grown in different conditions. In a novel finding, we demonstrate that atomically flat and highly crystalline $β$-$\textrm{Nb}_2\textrm{N}$ films can be grown at substrate temperatures of 1100 \degree C or higher, and…
We report resistivity, Hall coefficient, current-voltage characteristics, and magneto-optical imaging measurements of epitaxial Co-doped BaFe_{2}As_{2} thin films deposited on MgO(001) substrate. The Hall resistivity of the films has a substantial contribution arising from anomalous Hall effect of ferromagnetic components. The critical current density (J_{c}) of the films is ~2 MA/cm^{2} at low temperatures. Differential magneto-optical images of the remanent state give similar J_{c} values and also exhibit presence of extended defects in the film.
High-critical-temperature (Tc) superconductivity at 48 K is reported for hydrogen-doped SmFeAsO epitaxial films on MgO single-crystal substrates. The key processes are pulsed laser deposition to grow undoped SmFeAsO epitaxial films and subsequent topotactic chemical reaction using CaH2 powders under evacuated silica-glass ampule atmosphere. Based on this post-deposition thermal annealing treatment that we have developed, a maximum hydrogen concentration x = ~0.35 was realized in SmFeAs(O1-xHx). Disordered hydrogen-substitution at O sites is experimentally confirmed directly by atomic-scale mic…
We present transport, Hall effect, electronic tunnelling and penetration depth studies in 3D homogeneously disordered epitaxial NbN thin films with disorder ranging from the moderately clean limit (k_Fl~10.12) to the very dirty limit (k_Fl~1.24). The superconducting transition temperature (T_c) decreases from ~17K to less than 350mK with increasing disorder. The T_c and conductivity at the lowest temperature both asymptotically approach zero as k_Fl tends to 1, indicating a coincidence of the metal-insulator transition (MIT) and the superconductor-insulator transition. Close to critical disord…
This paper reports the nanoscale texture and microstructure of a high-performance NdFeAs(O,F) superconducting thin film grown by molecular beam epitaxy on a textured MgO/Y$_2$O$_3$/Hastelloy substrate. The NdFeAs(O,F) film forms a highly textured columnar grain structure by epitaxial growth on the MgO template. Although the film contains stacking faults along the $ab$-plane as well as grain boundaries perpendicular to the $ab$-plane, good superconducting properties are measured: a critical temperature, $T _{\rm c}$, of 46 K and a self-field critical current density, $J_{\rm c}$, of $2 \times 1…
Controlling the perpendicular magnetic anisotropy (PMA) in thin films has received considerable attention in recent years due to its technological importance. PMA based devices usually involve heavy-metal (oxide)/ferromagnetic-metal bilayers, where, thanks to interfacial spin-orbit coupling (SOC), the in-plane (IP) stability of the magnetization is broken. Here we show that in V/MgO/Fe(001) epitaxial junctions with competing in-plane and out-of-plane (OOP) magnetic anisotropies, the SOC mediated interaction between a ferromagnet (FM) and a superconductor (SC) enhances the effective PMA below t…
We report on the growth of NdFeAs(O,F) thin films on [001]-tilt MgO bicrystal substrates with misorientation angle theta_GB=6°, 12°, 24° and 45°, and their inter- and intra-grain transport properties. X-ray diffraction study confirmed that all our NdFeAs(O,F) films are epitaxially grown on the MgO bicrystals. The theta_GB dependence of the inter-grain critical current density Jc shows that, unlike Co-doped BaFe2As2 and Fe(Se,Te), its decay with theta_GB is rather significant. As a possible reason of this result, fluorine may have diffused preferentially to the grain boundary region and eroded …
We report on the transport properties of clean, epitaxial Fe(Se,Te) thin films prepared on Fe-buffered MgO (001) single crystalline substrates by pulsed laser deposition. Near Tc a steep slope of the upper critical field for H||ab was observed (74.1 T/K), leading to a very short out-of-plane coherence length, ξc, of 0.2 nm, yielding 2ξc(0) approximately 0.4 nm. This value is shorter than the interlayer distance (0.605 nm) between Fe-Se(Te) planes, indicative of modulation of the superconducting order parameter along the c-axis. An inverse correlation between the power law exponent N of the ele…
