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arXiv 0907.4735cond-mat.dis-nncond-mat.str-elcond-mat.supr-con
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强无序金属NbN电阻率和霍尔系数的温度依赖性

Temperature dependence of resistivity and Hall-coefficient in a strongly disordered metal: NbN

Madhavi Chand, Archana Mishra, Y. M. Xiong, Anand Kamlapure, S. P. Chockalingam, John Jesudasan, Vivas Bagwe, Mintu Mondal, P. W. Adams, Vikram Tripathi, Pratap Raychaudhuri

摘要:

我们报道了kFl~3.27-10.12的均匀无序外延NbN薄膜在正常状态下的电阻率(rho)和霍尔系数(R_H)与温度的关系。这些薄膜的超导转变温度(Tc)在8.13 ~ 16.8K之间。虽然我们的最小无序薄膜显示出通常的金属行为,但对于kFl<8.13的所有薄膜,在高达300 K时,和都是负的。我们观察到所有薄膜的R_H(T)与ρ(T)呈线性关系。在2nm厚的Be膜上进行的测量显示出类似的行为。这种行为与无序金属中局域化和电子-电子相互作用的现有理论不一致。

英文摘要:

We report the temperature dependence of resistivity (rho) and Hall coefficient (R_H) in the normal state of homogeneously disordered epitaxial NbN thin films with kFl~3.27-10.12. The superconducting transition temperature (Tc) of these films varies from 8.13K to 16.8K. While our least disordered film displays usual metallic behavior, for all the films with kFl<8.13, both and are negative up to 300K. We observe that R_H(T) varies linearly with rho(T) for all the films. Measurements performed on a 2nm thick Be film shows similar behavior >. This behavior is inconsistent with existing theories of localization and e-e interactions in a disordered metal.

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