Motivated by recent experiments [1-3] we calculate the thermopower of graphene incorporating the energy dependence of various transport scattering times. We find that scattering by screened charged impurities gives a reasonable explanation for the measured thermopower. The calculated thermopower behaves as 1/\sqrt{n} at high densities, but saturates at low densities. We also find that the thermopower scales with normalized temperature T/T_F and does not depend on the impurity densities, but strongly depends on the fine structure constant r_s and the location of the impurities. We discuss the deviation from the Mott formula in graphene thermopower, and use an effective medium theory to calculate thermopower at low carrier density regimes where electron-hole puddles dominate.
The electron transport through the parabolic quantum wire placed in longitudinal magnetic field in the presence of the system of short-range impurities inside the wire is investigated. Using approach based on the zero-range potential theory we obtained an exact formula for the transmission coefficient of the electron through the wire that allows to calculate such the transport characteristics as the conductance and differential thermopower. The dependencies of conductance and thermopower on the chemical potential and magnetic field are investigated. The effect of elastic scattering due to shor…
Thermoelectric measurements for graphene ribbons are currently performed on samples that include atomic disorder via defects and irregular edges. In this work, we investigate the thermopower or Seebeck coefficient of graphene ribbons within the linear response theory and the Landauer formalism, and we consider the diffusive regime taken as a limit of the ribbon aspect ratio. We find that the thermopower and the electronic conductivity depend not only on the aspect ratio, but also on chemical potential and temperature, which are set here as key parameters. The obtained numerical results with te…
The quantum corrections to the conductivity and the thermopower in monolayer graphene are studied. We use the recursive Green's function method to calculate numerically the conductivity and the thermopower of graphene. We then analyze these weak localization corrections by fitting with the analytical theory as function of the impurity parameters and the gate potential. As a result of the quantum corrections to the thermopower, we find large magnetothermopower which is shown to provide a very sensitive measure of the size and strength of the impurities. We compare these analytical and numerical…
It is known that electron scattering by surface polar phonons (SPPs) of the substrate reduces their mobility in supported graphene. However, there is no experimental evidence for contribution of drag of electrons by SPP to thermoelectric phenomena in graphene: graphene thermopower exhibits good agreement with Mott's law, which means that the diffusion contribution to the thermopower is dominant in a wide range of carrier densities and temperatures. Here we develop a complete theory of drag of electrons in graphene by SPP. By solving Boltzmann transport equation for electrons scattered by SPPs …
Monovalent impurities on graphene can be divided into ionically and covalently bond impurities. The covalent impurities cause universal midgap states as the carbon atom next to the impurity is effectively decoupled from the graphene pi-bands. The electronic structure of graphene suppresses migration of these impurities and making the universal midgap very stable. This effect is strongest for neutral covalently bond impurities. The ionically bond impurities have migration barriers of typically less than 0.1eV. An asymmetry between anions and cations regarding their adsorption sites and topology…
As a canonical response to the applied magnetic field, the electronic states of a metal are fundamentally reorganized into Landau levels. In Dirac metals, Landau levels can be expected without magnetic fields, provided that an inhomogeneous strain is applied to spatially modulate electron hoppings in a similar way as the Aharonov-Bohm phase. We here predict that a twisted zigzag nanoribbon of graphene exhibits strain-induced pseudo Landau levels of unexplored but analytically solvable dispersions at low energies. The presence of such dispersive pseudo Landau levels results in a negative strain…
We report measurements of the thermopower $S$ and Nernst signal $S_{yx}$ in graphene in a magnetic field $H$. Both quantities show strong quantum oscillations vs. the gate voltage $V_g$. Our measurements for Landau Levels of index $n\ne 0$ are in quantitative agreement with the edge-current model of Girvin and Jonson (GJ). The inferred off-diagonal thermoelectric conductivity $α_{yx}$ comes close to the quantum of Amps per Kelvin. At the Dirac point ($n=0$), however, the width of the peak in $α_{yx}$ is very narrow. We discuss features of the thermoelectric response at the Dirac point includin…
This letter calculates the contribution of electron-phonon interaction to thermoelectric effects in graphene. One considers the case of free standing graphene taking into account interaction with intrinsic acoustic phonons. The temperatures considered range from liquid nitrogen to the room level. It has turned out that the contribution to thermoelectromotive force due to electron drag by phonons is determined by the Fermi energy in the sample and phonon relaxation time. The explicit temperature dependence of the contribution to thermoelectromotive force deriving from by phonons is weak in cont…
Following the recent proposal by Weeks et al., which suggested that indium (or thallium) adatoms deposited on the surface of graphene should turn the latter into a quantum spin Hall (QSH) insulator characterized by a sizeable gap, we perform a systematic study of the transport properties of this system as a function of the density of randomly distributed adatoms. While the samples are, by construction, very disordered, we find that they exhibit an extremely stable QSH phase with no signature of the spatial inhomogeneities of the adatom configuration. We find that a simple rescaling of the spin…
It is shown that clustering of charged impurities on graphene can suppress their contribution to the resistivity by a large factor of about the number of impurities per cluster, while leaving the density dependence unchanged. If the cluster size is large in comparison with the Fermi wavelength, the scattering cross section shows sharp resonances as a function of incident angle and electron wavevector. In this regime, due to dominant contribution of scattering by small angles, the transport cross section can be much smaller than the quantum one, which can be verified experimentally by comparing…
Magic-angle twisted bilayer graphene (MtBLG) has proven to be an extremely promising new platform to realize and study a host of emergent quantum phases arising from the strong correlations in its narrow bandwidth flat band. In this regard, thermal transport phenomena like thermopower, in addition to being coveted technologically, is also sensitive to the particle-hole (PH) asymmetry, making it a crucial tool to probe the underlying electronic structure of this material. We have carried out thermopower measurements of MtBLG as a function of carrier density, temperature and magnetic field, and …
Thermopower probing emergent local moments in magic-angle twisted bilayer graphene
Indian Institute of Science（印度科学学院）；Indian Institute of Technology Kanpur（坎普尔印度理工学院）；National Institute for Materials Science（物质材料研究机构）；The Ohio State University（俄亥俄州立大学）
The phonon-drag thermopower is studied in monolayer graphene on a piezoelectric substrate. The phonon-drag contribution S^g_PA from the extrinsic potential of piezoelectric surface acoustic (PA) phonons of a piezoelectric substrate (GaAs) is calculated as a function of temperature T and electron concentration n_s. At very low temperature, S^g_PA is found to be much greater than S^g_DA of the intrinsic deformation potential of acoustic (DA) phonons of the graphene. There is a crossover of S^g_PA and S^g_DA at around ~5 K. In graphene samples of about >10 um size, we predict S_g ~20 uV at 10 K, …
Using wave function matching approach and employing the Landauer-Buttiker formula a ferromagnetic graphene junction with a temperature gradient across the system, is studied. We calculate the thermally induced charge and spin current as well as the thermoelectric voltage (Seebeck effect) in the linear and nonlinear regimes. Our calculation revealed that due to the electron-hole symmetry, the charge Seebeck coefficient is, for an undoped magnetic graphene, an odd function of chemical potential while the spin Seebeck coefficient is an even function regardless of the temperature gradient and junc…
The thermoelectric response of high mobility single layer epitaxial graphene on silicon carbide substrates as a function of temperature and magnetic field have been investigated. For the temperature dependence of the thermopower, a strong deviation from the Mott relation has been observed even when the carrier density is high, which reflects the importance of the screening effect. In the quantum Hall regime, the amplitude of the thermopower peaks is lower than a quantum value predicted by theories, despite the high mobility of the sample. A systematic reduction of the amplitude with decreasing…
We explore the longitudinal conductivity of graphene at the Dirac point in a strong magnetic field with two types of short-range scatterers: adatoms that mix the valleys and "scalar" impurities that do not mix them. A scattering theory for the Dirac equation is employed to express the conductance of a graphene sample as a function of impurity coordinates; an averaging over impurity positions is then performed numerically. The conductivity $σ$ is equal to the ballistic value $4e^2/πh$ for each disorder realization provided the number of flux quanta considerably exceeds the number of impurities.…
The in-plane phonon-drag thermopower $S^g$, diffusion thermopower $S^d$ and the power factor $PF$ are theoretically investigated in twisted bilayer graphene (tBLG) as a function of twist angle $θ$, temperature $T$ and electron density $n_s$ in the region of low $T$ (1-20 K). As $θ$ approaches magic angle $θ_m$, the $S^g$ and $S^d$ are found to be strongly enhanced, which is manifestation of great suppression of Fermi velocity ${ν_F}^*$ of electrons in moire flat band near $θ_m$. This enhancement decreases with increasing $θ$ and $T$. In the Bloch- Gruneisen (BG) regime, it is found that $S^g \…
Using density functional theory combined with a Green's function scattering approach, we examine the thermoelectric properties of hetero-nanoribbons formed from alternating lengths of graphene and boron nitride. In such structures, the boron nitride acts as a tunnel barrier, which weakly couples states in the graphene, to form mini-bands . In un-doped nanoribbons, the mini bands are symmetrically positioned relative to the Fermi energy and do not enhance thermoelectric performance significantly. In contrast, when the ribbons are doped by electron donating or electron accepting adsorbates, the …
Interaction between adsorbed atoms in graphene is studied using a combination of DFT and the path integral formalism. Our results reveal a complex non-monotonic interaction profile. We show that the strength and sign of the interaction are dictated by the arrangement of impurities, as well as the system doping. These findings can be used to interpret the complex behavior of impurities in experimentally realized systems, as well as other classes of impurities, such as C substitutions in graphene.
Thermoelectric measurements have the potential to uncover the density of states of low-dimensional materials. Here, we present the anomalous thermoelectric behaviour of mono-layer graphene-nanowire (NW) heterostructures, showing large oscillations as a function of doping concentration. Our devices consist of InAs NW and graphene vertical heterostructures, which are electrically isolated by thin ($\sim$ 10nm) hexagonal boron nitride (hBN) layers. In contrast to conventional thermoelectric measurements, where a heater is placed on one side of a sample, we use the InAs NW (diameter $\sim 50$ nm) …
We study the electric and thermal transport of the Dirac carriers in monolayer graphene using the Boltzmann-equation approach. Motivated by recent thermopower measurements [F. Ghahari, H.-Y.~Xie, T. Taniguchi, K. Watanabe, M.~S.~Foster, and P.~Kim, Phys.\ Rev.\ Lett.\ {\bf 116}, 136802 (2016)], we consider the effects of quenched disorder, Coulomb interactions, and electron--optical-phonon scattering. Via an unbiased numerical solution to the Boltzmann equation we calculate the electrical conductivity, thermopower, and electronic component of the thermal conductivity, and discuss the validity …
In this work we study thermoelectric properties of graphene nanoribbons with side-attached organic molecules. By adopting a single-band tight binding Hamiltonian and the Green's function formalism, we calculated the transmission and Seebeck coefficients for different hybrid systems. The corresponding thermopower profiles exhibit a series of sharp peaks at the eigenenergies of the isolated molecule. We study the effects of the temperature on the thermoelectric response, and we consider random configurations of molecule distributions, in different disorder regimes. The main characteristics of th…
We apply the semi-classical quantum Boltzmann formalism for the computation of transport properties to multilayer graphene. We compute the electrical conductivity as well as the thermal conductivity and thermopower for Bernal-stacked multilayers with an even number of layers. We show that the window for hydrodynamic transport in multilayer graphene is similar to the case of bilayer graphene. We introduce a simple hydrodynamic model which we dub the multi-fluid model and which can be used to reproduce the results for the electrical conductivity and thermopower from the quantum Boltzmann equatio…
A significant advance toward achieving practical applications of graphene as a two-dimensional material in nanoelectronics would be provided by successful synthesis of both n-type and p-type doped graphene. However reliable doping and a thorough understanding of carrier transport in the presence of charged impurities governed by ionized donors or acceptors in the graphene lattice are still lacking. Here we report experimental realization of few-layer nitrogen-doped (N-doped) graphene sheets by chemical vapor deposition of organic molecule 1, 3, 5-triazine on Cu metal catalyst. By reducing the …
Experimentally produced graphene sheets exhibit a wide range of mobility values. Both extrinsic charged impurities and intrinsic ripples (corrugations) have been suggested to induce long-range disorder in graphene and could be a candidate for the dominant source of disorder. Here, using large-scale molecular dynamics and quantum transport simulations, we find that the hopping disorder and the gauge and scalar potentials induced by the ripples are short-ranged, in strong contrast with predictions by continuous models, and the transport fingerprints of the ripple disorder are very different from…
We study the interaction between two magnetic adatom impurities in graphene using the Anderson model. The two-impurity Anderson Hamiltonian is solved numerically by using the quantum Monte Carlo technique. We find that the inter-impurity spin susceptibility is strongly enhanced at low temperatures, significantly diverging from the well-known Ruderman-Kittel-Kasuya-Yoshida (RKKY) result which decays as $R^{-3}$.
Bound and resonance electronic states in impure graphene are studied. Short-range perturbations for defects and impurities of the types "local chemical potential" and "local gap" are taken into account. Zero gap and non-zero gap kinds of graphene are considered. A qualitative analysis of the electronic spectrum general features and numeric calculations are presented. A dependence of the resonance widths on the gap value, angular momentum values and the perturbation amplitudes is investigated.
Bound electron states in impure graphene are considered. Short-range perturbations for defect and impurities of the types "local chemical potential" and "local gap" are taken into account.
It is shown that a ``vacuum polarization'' induced by Coulomb potential in graphene leads to a strong suppression of electric charges even for undoped case (no charge carriers). A standard linear response theory is therefore not applicable to describe the screening of charge impurities in graphene. In particular, it overestimates essentially the contributions of charge impurities into the resistivity of graphene.
We study the problem of impurities and mid-gap states in a biased graphene bilayer. We show that the properties of the bound states, such as localization lengths and binding energies, can be controlled externally by an electric field effect. Moreover, the band gap is renormalized and impurity bands are created at finite impurity concentrations. Using the coherent potential approximation we calculate the electronic density of states and its dependence on the applied bias voltage.
We study the physics of Dirac fermions in a gapped graphene monolayer containing two Coulomb impurities. For the case of equal impurity charges, we discuss the ground-state energy using the linear combination of atomic orbitals (LCAO) approach. For opposite charges of the Coulomb centers, an electric dipole potential results at large distances. We provide a nonperturbative analysis of the corresponding low-energy scattering problem.
We study the spin relaxation of charge carriers in graphene in the presence of spin-polarized charged impurities by calculating the time evolution of initially polarized state. The spin relaxation time shows completely different energy behaviour for short-ranged and long-ranged spin scatterers and can be used to identify the dominant source of spin scattering. Our results agree well with recent experimental findings and indicate that their spin relaxation is likely caused by long-ranged scatterers.
Intervalley charged-impurity scattering processes are examined. It is found that the scattering probability is enhanced due to the Coulomb interaction with the impurity by the Sommerfield factor $F_Z\propto ε^{2\sqrt{1-4g^2}-2}$, where $ε$ is the electron energy and $g$ is the dimensionless constant of the Coulomb interaction.
The effective spin exchange coupling between impurities (adatoms) on graphene mediated by conduction electrons is studied as a function of the strength of the potential part of the on-site energy $U$ of the electron-adatom interaction. With increasing $U$, the exchange coupling becomes long-range, determined largely by the impurity levels with energies close to the Dirac points. When adatoms reside on opposite sublattices, their exchange coupling, normally antiferromagnetic, becomes ferromagnetic and resonantly enhanced at a specific distance where an impurity level crosses the Dirac point.
Inherent symmetries of a system lead to multiple degeneracies of its energy spectra. Introducing individual atomic impurities can locally break these symmetries, which is expected to lift the degenerate degrees of freedom around the impurities. Although central to our understanding of the fundamental properties of solids, the broken-symmetry states induced by individual atomic impurities have so far eluded observation. Here, we report nanoscale probing of the broken-symmetry states in graphene induced by two types of individual atomic impurities, i.e., isolated nitrogen dopants and isolated hy…
Large Nernst effect in chemically derived multilayer graphene at millitesla magnetic fields
Moscow Institute of Physics and Technology（莫斯科物理技术学院）；Joint-Stock Company ”Skanda Rus”（斯坎达鲁斯股份公司）；National Research Nuclear University “MEPhI”（国立核研究大学“莫斯科工程物理学院”）；Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences（俄罗斯科学院微电子技术与高纯材料研究所）
We develop a first-principles theory of resonant impurities in graphene and show that a broad range of typical realistic impurities leads to the characteristic sublinear dependence of the conductivity on the carrier concentration. By means of density functional calculations various organic groups as well as ad-atoms like H absorbed to graphene are shown to create midgap states within +-0.03eV around the neutrality point. A low energy tight-binding description is mapped out. Boltzmann transport theory as well as a numerically exact Kubo formula approach yield the conductivity of graphene contam…
Scattering problem for electrons in monolayer graphene with short-range perturbations of the types "local chemical potential" and "local gap" has been solved. Zero gap and non-zero gap kinds of graphene are considered. The determined S-matrix can be used for calculation of such observables as conductance and optical absorption.
We present calculations of the thermal and electric linear response in graphene, including disorder in the self-consistent t-matrix approximation. For strong impurity scattering, near the unitary limit, the formation of a band of impurity states near the Fermi level leads to that Mott's relation holds at low temperature. For higher temperatures, there are strong deviations due to the linear density of states. The low-temperature thermopower is proportional to the inverse of the impurity potential and the inverse of the impurity density. Information about impurity scattering in graphene can be …
Spectral and transport properties of doped (or gated) graphene with long range charged impurities are discussed within the self-consistent Born approximation. It is shown how, for impurity concentrations $n_{imp}\gtrsim n$ a finite DOS appears at the Dirac point, the one-particle lifetime no longer scales linearly with the Fermi momentum, and the lineshapes in the spectral function become non-lorentzian. These behaviors are different from the results calculated within the Born approximation. We also calculate the optical conductivity from the Kubo formula by using the self-consistently calcula…
We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile as well as graphene's transport properties. We discuss the screening of a single Coulomb impurity and the ensemble averaged density profile of graphene in the presence of many randomly distributed impurities. Finally, we discuss graphene's transport properties due to scattering off charged impurities both at low and high carrier density.
The growing interest in carbon-based spintronics has stimulated a number of recent theoretical studies on the RKKY interaction in graphene, with the aim of determining the most energetically favourable alignments between embedded magnetic moments. The RKKY interaction in undoped graphene decays faster than expected for conventional two-dimensional materials and recent studies suggest that the adsorption configurations favoured by many transition-metal impurities may lead to even shorter ranged decays and possible sign-changing oscillations. Here we show that these features emerge in a mathemat…
We report nanocrystalline carbon impurities coexisting with graphene synthesized via chemical vapor deposition (CVD) on platinum. We observe micron-size island-like impurity layers, which can easily be mistaken for second graphene layers in optical microscopy or secondary electron microscopy (SEM). The island orientation depends on the crystalline orientation of the Pt, as shown by electron backscatter diffraction(EBSD), indicating growth of amorphous carbon below graphene. Dark-field TEM indicates that in addition to uniform single-crystal graphene, our sample is decorated with nanocrystallin…
We theoretically study the atomic structure and energetics of silicon and silicon-nitrogen impurities in graphene. Using density-functional theory, we get insight into the atomic structures of the impurities, evaluate their formation energies and assess their abundance in realistic samples. We find that nitrogen, as well as oxygen and hydrogen, are trapped at silicon impurities, considerably altering the electronic properties of the system. Furthermore, we show that nitrogen doping can induce local magnetic moments resulting in spin-dependent transport properties, even though neither silicon n…
A dilute distribution of magnetic impurities is assumed to be present in doped graphene. We calculate the interaction energy between two magnetic impurities which are coupled via the indirect-exchange or Ruderman-Kittel-Kasuva-Yosida (RKKY) interaction by the doped conduction electrons. The current model is a half-filled $AB$-lattice structure. Our calculations are based on the retarded lattice Green's function formalism in momentum-energy space which is employed in linear response theory to determine the magnetic susceptibility in coordinate space. Analytic results are obtained for gapped gra…
We consider an effect of weak impurities on electronic properties of graphene within the functional renormalization-group approach. The energy dependences of the electronic self-energy and density of states near the neutrality point are discussed. Depending on the symmetry of the impurities, the electronic damping $Γ$ and density of states $ρ$ can deviate substantially from those given by the self-consistent Born approximation. We investigate the crossover from the results of the self-consistent Born approximation, which are valid far from the neutrality point to the strong-coupling (diffusive…
We investigate the conductivity of doped graphene in the semiclassical Boltzmann limit, as well as the conductivity minimum within the self-consistent transport theory. Using the hard-disk model for a two-dimensional distribution of impurities gives rise to both strong increase in the slope of conductivity at low charge carrier densities in graphene and a strongly sub-linear behavior of the conductivity at high charge carrier densities when the correlation distance between the impurities is large. On the other hand, we find that a super-linear dependence of the conductivity on charge carrier d…
The effective interaction between resonant magnetic Anderson impurities in graphene, mediated by conduction electrons, is studied as a function of the strength of the onsite energy level of the impurities and the amplitude of coupling to conduction electrons. The sign and character of the interaction depend on whether the impurities reside on the same or opposite sublattices. For the same (opposite) sublattice, the potential interaction is attractive (repulsive) in the weak coupling limit with $1/R^3$ dependence on the distance; the interaction reverses sign and becomes repulsive (attractive) …
We analyze the electronic properties of bilayer graphene with Bernal stacking and a low concentration of adatoms. Assuming that the host bilayer lies on top of a substrate, we consider the case where impurities are adsorbed only on the upper layer. We describe non-magnetic impurities as a single orbital hybridized with carbon's pz states. The effect of impurity doping on the local density of states with and without a gated electric field perpendicular to the layers is analyzed. We look for Anderson localization in the different regimes and estimate the localization length. In the biased system…
In graphene devices with a varying degree of disorders as characterized by their carrier mobility and minimum conductivity, we have studied the thermoelectric power along with the electrical conductivity over a wide range of temperatures. We have found that the Mott relation fails in the vicinity of the Dirac point in high-mobility graphene. By properly taking account of the high temperature effects, we have obtained good agreement between the Boltzmann transport theory and our experimental data. In low-mobility graphene where the charged impurities induce relatively high residual carrier dens…
We point out the existence of finite charge and spin Hall conductivities of graphene in the presence of a spin orbit interaction (SOI) and localized magnetic impurities. The SOI in graphene results in different transverse forces on the two spin channels yielding the spin Hall current. The magnetic scatterers act as spin-dependent barriers, and in combination with the SOI effect lead to a charge imbalance at the boundaries. As indicated here, the charge and spin Hall effects should be observable in graphene by changing the chemical potential close to the gap.
We report {\it ab initio} calculations of the structural, electronic and magnetic properties of a graphene monolayer substitutionally doped with Co (Co$_{sub}$) atoms. We focus in Co because among traditional ferromagnetic elements (Fe, Co and Ni), only Co$_{sub}$ atoms induce spin-polarization in graphene. Our results show the complex magnetism of Co substitutional impurites in graphene, which is mapped into simple models such as the $π$-vacancy and Heisenberg model. The links established in our work can be used to bring into contact the engineering of nanostructures with the results of $π$-m…
The effect of electronic interactions in graphene with vacancies or resonant scatterers is investigated. We apply dynamical mean-field theory in combination with quantum Monte Carlo simulations, which allow us to treat non-perturbatively quantum fluctuations beyond Hartree-Fock approximations. The interactions narrow the width of the resonance and induce a Curie magnetic susceptibility, signaling the formation of local moments. The absence of saturation of the susceptibility at low temperatures suggests that the coupling between the local moment and the conduction electrons is ferromagnetic.
We propose that the observed spin-relaxation in bilayer graphene is due to resonant scattering by magnetic impurities. We analyze a resonant scattering model due to adatoms on both dimer and non-dimer sites, finding that only the former give narrow resonances at the charge neutrality point. Opposite to single-layer graphene, the measured spin-relaxation rate in graphene bilayer increases with carrier density. Although it has been commonly argued that a different mechanism must be at play for the two structures, our model explains this behavior rather naturally in terms of different broadening …
Resonant scattering of electrons with low energies (as compared to the bandwidth) on a single neutral short-range impurity in graphene is analyzed theoretically, taking into account the valley degeneracy. Resonances dramatically increase the scattering cross-section and introduce a strong energy dependence. Analysis of the tight-binding model shows that resonant scattering is typical for generic impurities as long as they are sufficiently strong (the potential is of the order of the electron bandwidth or higher).
We investigate the ballistic electron transport in a monolayer graphene with configurational averaged impurities, located between two clean graphene leads. It is shown that the electron transmission are strongly dependent on the concentration of impurities and the incident energy. In turn, the conductance computed using the Landauer formalism shows a similar behavior to those found in experimental works as a function of the applied voltage for different concentrations of impurities in the limit of low temperatures. In the limit of zero bias voltage, the conductance shows a minimum value which …
Thermopower of graphene-superconductor (GS) junction is analyzed within the extended Blonder- Tinkham-Klapwijk formalism. Within this approach we have also calculated the temperature de- pendence of the zero-bias conductance for GS junction. Both quantities reflect quasi-relativistic nature of massless Dirac fermions in graphene. Both, the linear and the non-linear regimes are considered.
We investigate the electrical conductivity of spin-polarized graphene in the presence of short-ranged magnetic scatterers within the relaxation time approximation and the semi-classical Boltzmann approach. Spin-flip scattering of the itinerant electrons from the majority spin sub-band into the minority one results in a minimum in the electrical resistivity at a finite temperature. While this behavior is reminiscent of the renowned Kondo effect, it has an entirely different origin and differs from the Kondo effect in several aspects. In particular, unlike the Kondo effect, this is a single part…
This work analyses how impurities and vacancies on the surface of a graphene sample affect its optical conductivity and plasmon excitations. The disorder is analysed in the self-consistent Green's function formulation and nonlocal effects are fully taken into account. It is shown that impurities modify the linear spectrum and give rise to an impurity band whose position and width depend on the two parameters of our model, the density and the strength of impurities. The presence of the impurity band strongly influences the electromagnetic response and the plasmon losses. Furthermore, we discuss…
