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arXiv 0902.1468cond-mat.str-el
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U3Bi4Ni3中杂化驱动能隙的~(209)Bi NMR/NQR研究

Hybridization-driven gap in U3Bi4Ni3: a 209Bi NMR/NQR study

S. -H. Baek, N. J. Curro, T. Klimczuk, H. Sakai, E. D. Bauer, F. Ronning, J. D. Thompson

摘要:

本文报道了近藤绝缘体U3 Bi 4 Ni 3单晶的~(209)Bi NMR和NQR测量结果。209 Bi核自旋-晶格弛豫速率($T_1^{-1}$)显示出激活行为,并与220 K的自旋能隙很好地拟合。209 Bi的奈特位移(K)表现出强烈的温度依赖性,这是由5 f电子引起的,其中K在高温下为负,并随着温度的降低而增加。低于50 K时,K显示出宽的最大值,并在进一步冷却时略有下降。我们的数据提供了深入了解的超精细领域的演变,在一个完全带隙的近藤绝缘体的基础上5 f电子杂化。

英文摘要:

We report 209Bi NMR and NQR measurements on a single crystal of the Kondo insulator U3Bi4Ni3. The 209Bi nuclear spin-lattice relaxation rate ($T_1^{-1}$) shows activated behavior and is well-fit by a spin gap of 220 K. The 209Bi Knight shift (K) exhibits a strong temperature dependence arising from 5f electrons, in which K is negative at high temperatures and increases as the temperature is lowered. Below 50 K, K shows a broad maximum and decreases slightly upon further cooling. Our data provide insight into the evolution of the hyperfine fields in a fully gapped Kondo insulator based on 5f electron hybridization.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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