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arXiv 0901.0954cond-mat.mes-hall
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Al/AlO $_{x}$ /Sc平面隧道结中的双沟道近藤效应

Two-Channel Kondo Effects in Al/AlO$_{x}$/Sc Planar Tunnel Junctions

Sheng-Shiuan Yeh, Juhn-Jong Lin

摘要:

在2 ~ 35 K温度范围内,我们测量了几种Al/AlO $_{x}$ /Sc平面隧道结的微分电导$G(V,T)$。随着温度降低到$\sim$ 16 K,零偏压电导$G(0,T)$从标准的$-$ In $T$依赖性跨越到新的$- \sqrt{T}$依赖性。相应地,有限偏压电导$G(V,T)$揭示了$\sim$ 4 ~ 16 K的双通道近藤标度行为.观察到的双通道近藤物理归因于起源于一些本地化的自旋$\frac12$ Sc原子位于稍微内部的AlO $_x$ /Sc界面。

英文摘要:

We have measured the differential conductances $G(V,T)$ in several Al/AlO$_{x}$/Sc planar tunnel junctions between 2 and 35 K. As the temperature decreases to $\sim$ 16 K, the zero-bias conductance $G(0,T)$ crosses over from a standard $-$ln$T$ dependence to a novel $- \sqrt{T}$ dependence. Correspondingly, the finite bias conductance $G(V,T)$ reveals a two-channel Kondo scaling behavior between $\sim$ 4 and 16 K. The observed two-channel Kondo physics is ascribed to originating from a few localized spin-$\frac12$ Sc atoms situated slightly inside the AlO$_x$/Sc interface.

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