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arXiv 0901.0440cond-mat.mtrl-sci
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二维晶体电子结构的从头算研究

Electronic structure of two-dimensional crystals from ab-initio theory

S. Lebegue O. Eriksson

摘要:

我们报告从头计算的二维系统的二硫化钼2和NbSe 2,最近合成。我们发现二维MoS $_2$是一种半导体,其带隙与三维类似物的带隙相当接近,而NbSe $_2$是一种金属,与该化合物的三维类似物类似。我们进一步计算了Si和Ge的二维六方(类石墨烯)晶格的电子结构,并与石墨烯的电子结构进行了比较。据发现,与狄拉克锥相关的性质不会出现在二维六方锗的情况下,这是金属的,相反,二维六方硅,其具有与石墨烯非常相似的电子结构,使它们可能是等效的。

英文摘要:

We report on ab-initio calculations of the two-dimensional systems MoS2 and NbSe2, which recently were synthesized. We find that two-dimensional MoS$_2$ is a semiconductor with a gap which is rather close to that of the three dimensional analogue, and that NbSe$_2$ is a metal, which is similar to the three dimensional analogue of this compound. We further computed the electronic structure of the two-dimensional hexagonal (graphene like) lattices of Si and Ge, and compare them with the electronic structure of graphene. It is found that the properties related to the Dirac cone do not appear in the case of two-dimensional hexagonal germanium, which is metallic, contrary to two-dimensional hexagonal silicon, which has an electronic structure very similar to the one of graphene, making them possibly equivalent.

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