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arXiv 1606.04201cond-mat.mtrl-sci
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SnII2TiO4E2氧化为SnIV2TiO6时电子结构和晶体化学的急剧变化:从头算研究

Drastic changes of electronic structure and crystal chemistry upon oxidation of SnII2TiO4E2 into SnIV2TiO6: an ab initio study

Samir F. Matar, Mario Maglione, Michel Nakhl, Charbel Kfoury, Jean Etourneau

摘要:

从基于DFT的计算建立的能量-体积状态方程和电子局域化映射,电子结构和晶体化学的变化,从Sn 2 TiO 4到Sn 2 TiO 6的氧化是合理的,关键的影响是不稳定的二价锡II对四价状态SnIV导致金红石型Sn 2 TiO 6的实验观察。随后的电子结构变化突出显示在电子带隙的相对变化中,其从约1 eV增加到2.2eV,并且体积模量增加1.5倍,这归因于从共价SnII基化合物到更离子化的SnIV基化合物的变化。这种趋势也面临着黑色SnIIO的相关性能,其特征在于非常小的带隙。

英文摘要:

From DFT based calculations establishing energy-volume equations of state and electron localization mapping, the electronic structure and crystal chemistry changes from Sn2TiO4 to Sn2TiO6 by oxidation are rationalized; the key effect being the destabilization of divalent tin SnII towards tetravalent state SnIV leading to rutile Sn2TiO6 as experimentally observed. The subsequent electronic structure change is highlighted in the relative change of the electronic band gap which increases from ~1eV up to 2.2 eV and the 1.5 times increase of the bulk modulus assigned to the change from covalently SnII based compound to the more ionic SnIV one. Such trends are also confronted with the relevant properties of black SnIIO characterized by very small band gap.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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