Atomic-level structure of solids is typically determined by techniques such as X-ray and electron diffraction,1, 2, 3, 4 which are sensitive to atomic positions. It is hardly necessary to mention the impact that these techniques have had on almost every field of science. However, the bonds between atoms are critical for determining the overall structure. The dynamics of these bonds have been difficult to quantify. Here, we combine second-harmonic generation and the bond-charge model of nonlinear optics5, 6 to probe, in real time, the dynamics of bond-by-bond chemical changes during the oxidation of H-terminated (111)Si, a surface that has been well characterized by static methods. We thus demonstrate that our approach provides new information about this exhaustively studied system. For example, oxidation is activated by a surprisingly small applied macroscopic strain, and exhibits anisotropic kinetics with one of the three equivalent back-bonds of on-axis samples reacting differently from the other two. Anisotropic oxidation kinetics also leads to observed transient changes in bond directions. By comparing results for surfaces strained in different directions, we find that in-plane control of surface chemistry is possible. The use of nonlinear optics as a bond-specific characterization tool is readily adaptable for studying structural and chemical dynamics in many other condensed-matter systems.
It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time second-harmonic-generation data on the oxidation of H-terminated (111)Si that reveal that high concentrations of electrons increase the chemical reactivity of the outer-layer Si-Si back bonds relative to the Si-H up bonds. However, the thicknesses of the natural oxides of all samples stabilize near 1 nm at room temperature, regardless of the chemical kinetics of t…
Introduction bond-band-barrier (BOLS) correlation for the effect of electronic process of oxidation and the bond order-length-strengtrh (BOLS) correlation for the behaviour of nanostructures.
Atomic force microscopy and second-harmonic generation data show that boron doping enhances the rate of oxidation of H-terminated silicon. Holes cause a greater increase in the reactivity of the Si-H up bonds than that of the Si-Si back bonds.
Raman spectroscopy has been used to identify defective bonding in neon and silicon ion irradiated single crystals of 6H-SiC. Observable differences exist in the C-C bonding region corresponding to different defect structures for neon and silicon ion implantations. Raman spectra of ion irradiated SiC show less tensile strain than neutron irradiations, explained by a residual compressive stress caused by the swelling constrained by the undamaged substrate. Evidence of oxidation during high temperature ion implantation is observed as C-O and Si-O Raman signals. Annealing irradiated SiC while acqu…
We demonstrate that at the usual 1E-7 torr range of base pressures in the sputtering chamber, X-ray photoelectron spectroscopy shows the existence of a thin AlOx layer at the Nb/Al interface in both Nb/Al-AlOx/Pb tunnel junctions and Nb/Al bilayers. This is due to the time elapsed between the deposition of the Nb and Al bottom layers, even at times as short as 100 s. We also give some direct evidence of the oxidation of the top Pb electrode on the Nb electrode surface. Such oxidation probably occurs at the pinholes of the intermediate Al-AlOx layer of the junctions, as a consequence of the oxi…
Usually the ions of a particular element in solids are in positive or negative oxidation states, depending upon the chemical environment. It is highly unusual for an atom having both positive as well as negative oxidation states simultaneously within the same structural framework in a particular compound. Our structural and chemical bonding analyses show that the hydrogen ions in the transition metal ammine borohydrides (TMABHs) with the chemical formula M(BH4)2(NH3)2 (M = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn) have both positive and negative oxidation states. Our detailed analyses confirm …
The diffusion of superoxide radical anions on the surface of TiO2 catalysts is theoretically considered as an important step in the kinetics of photocatalytic oxidation of toxic pollutants. A detailed analysis is performed to discriminate the effects of rotation, anion and adsorption bonds vibrations on the diffusion coefficient. A resonant dependence of the diffusivity on the lattice parameters of the TiO2 surface is discovered showing that the most rapid diffusion takes place when the lattice parameters are twice larger than the bond length of the superoxide radical anions. Whereas the rotat…
Despite their importance, chemical reactions confined in a low dimensional space are elusive and experimentally intractable. In this work, we report doubly anisotropic, in-plane and out-of-plane, oxidation reactions of two-dimensional crystals, by resolving interface-confined thermal oxidation of a single and multilayer MoS2 supported on silica substrates from their conventional surface reaction. Using optical second-harmonic generation spectroscopy of artificially stacked multilayers, we directly proved that crystallographically oriented triangular oxides (TOs) were formed in the bottommost l…
The growth of a U3O7 oxide layer during the anionic oxidation of UO2 pellets induced very important mechanical stresses due to the crystallographic lattice parameters differences between UO2 and its oxide. These stresses, combined with the chemical processes of oxidation, can lead to the cracking of the system, called chemical fragmentation. We study the crystallographic orientation of the oxide lattice growing at the surface of UO2, pointing the fact that epitaxy relations at interface govern the coexistence of UO2 and U3O7. In this work, several results are given: - Determination of the epit…
At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope, to analyse the Ti3+ ratio, characteristic of extra electrons. We find an interface concentration of Ti3+ that depends on growth conditions.
Oxidation strongly influences the properties of magnetic layers employed in spintronic devices. We study the effect of oxidation on the structural, magnetic, and electrical properties as well as current-induced spin-orbit torques (SOTs) in Pt/Co/AlOx, Pt/CoOx/Co/AlOx, and PtOx/Co/AlOx layers. We show how the saturation magnetization, perpendicular magnetic anisotropy, anomalous Hall resistance, and SOT are systematically affected by the degree of oxidation of both the Pt/Co and Co/Al interfaces. Oxidation of the Co/Al interface results in a 21% and 42% variation of the dampinglike and fieldlik…
We have performed electronic state calculations to clarify the initial stage of the oxidation of the Si- and C-faces in 4H-SiC based on the density-functional theory. We investigate how each Si and C atomic site is oxidized on C- and Si-face, and explore most probable reaction pathways, corresponding energy barriers, and possible defects generated during the oxidation. We have found that carbon annihilation process is different between on Si- and on C-face, and this difference causes different defects in interface; In C-face case, (1), carbon atoms are dissociated directly from the substrate a…
We present first-principles calculations of the structural and electronic properties of Si(001)-SiO2 interfaces. We first arrive at reasonable structures for the c-Si/a-SiO2 interface via a Monte-Carlo simulated annealing applied to an empirical interatomic potential, and then relax these structures using first-principles calculations within the framework of density-functional theory. We find a transition region at the interface, having a thickness on the order of 20Å, in which there is some oxygen deficiency and a corresponding presence of sub-oxide Si species (mostly Si^+2 and Si^+3). Distri…
Silicon carbide (SiC) is an attractive semiconductor material for applications in power electronic devices. However, fabrication of a high-quality SiC/SiO${}_2$ interface has been a challenge. It is well-known that there is a great difference in oxidation rate between the Si-face and C-face, and that the quality of oxide on the Si-face is greater than that on the C-face. However, the atomistic mechanism of the thermal oxidation of SiC remains to be solved. In this paper, a new Si-C-O interatomic potential was developed to reproduce the kinetics of the thermal oxidation of SiC. Using this newly…
The effects of the oxidation atmosphere and crystal faces on the interface-trap density was examined by using constant-capacitance deep-level transient spectroscopy to clarify the origin of them. By comparing the DLTS spectra of the low-mobility interfaces oxidized in a N$_2$O atmosphere with those of the high-mobility interfaces on C-face oxidized in a wet atmosphere, it was found that a high density of traps are commonly observed around the energy of 0.16 eV from the edge of the conduction band ($C1$ traps) in low-mobility interfaces irrespective of crystal faces. It was also found that the …
We report first-principles static and dynamic calculations that clarify the microscopic mechanism of carbon annihilation due to phosphorous treatment upon oxidation of silicon carbide (SiC). We identify the most stable form of the phosphorus (P) in the oxide as the four-fold coordinated with the dangling PO unit and find that the unit attracts carbon ejected from the interface, thus operating as a carbon absorber. This finding provides a microscopic reasoning for the first time for the promotion of the oxidation reaction on one hand and the annihilation of the C-related defects at the interfac…
Understanding oxidation mechanisms of layered semiconducting transition-metal dichalcogenide (TMDC) is important not only for controlling native oxide formation but also for synthesis of oxide and oxysulfide products. Here, reactive molecular dynamics simulations show that oxygen partial pressure controls not only the ZrS2 oxidation rate but also the oxide morphology and quality. We find a transition from layer-by-layer oxidation to amorphous-oxide-mediated continuous oxidation as the oxidation progresses, where different pressures selectively expose different oxidation stages within a given t…
We report that current-induced spin-orbit torques (SOTs) in heavy-metal/ferromagnetic-metal bilayers are strongly altered by the oxidation of the ferromagnetic layer near the interface. We measured damping-like (DL) and field-like (FL) SOTs for Pt/Co and Pt/Ni$_{81}$Fe$_{19}$ (Pt/Py) films using spin-torque ferromagnetic resonance. In the Pt/Co film, we found that the oxidation of the Co layer near the interface enhances both DL and FL SOTs in spite of the insulating nature of the CoO$_x$ layer. The enhancement of the SOTs disappears by inserting a thin Ti layer at the Pt/CoO$_x$ interface, in…
Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied. X-ray photoelectron spectra (XPS) and optically stimulated electron emission (OSEE) measurements have demonstrated that boron-doped graphene coating provides a high corrosion resistivity of Cu-substrate with the light traces of the oxidation of carbon cover. The density functional theory calculations suggest that for the case of substitutional (graphitic) boron-defect only the oxidation near boron impurity is energetically …
In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings and nanowires exhibits an extremely different and complex behavior. Such effects have been investigated by the modeling of the mechanical stress generated during the oxidation process explaining the retarded regime. The model describes the oxidation kinetics of silicon nanowires down to a few nanometers while predicting reasonable and physical stress levels at the …
The formation of a hydroxylated native oxide layer on Si(001) under wet conditions is studied by means of first principles molecular dynamics simulations. Water molecules are found to adsorb and dissociate on the oxidised surface leading to rupture of Si-O bonds and producing reactive sites for attack by dissolved dioxygen or hydrogen peroxide molecules. Tensile strain is found to enhance the driving force for the dissociative adsorption of water, suggesting that similar reactions could be responsible for environmentally-driven sub-critical crack propagation in silicon.
The oxidation of SiC and Si provide a unique opportunity for studying oxidation mechanisms because the product is the same, SiO2. Silicon oxidation follows a linear-parabolic law, with molecular oxygen identified as the oxidant. SiC oxidation obeys the same linear-parabolic law but has different rates and activation energies and exhibits much stronger face-dependence. Using results from first-principles calculations, we show that atomic and molecular oxygen are the oxidant for Si- and C-face SiC respectively. Comparing SiC with Si, we elucidate how the interface controls the competition betwee…
Reducible oxides are widely used catalyst supports that can increase oxidation reaction rates by transferring their lattice oxygen at the metal-support interface. The interfacial oxidation process is typically described in terms of a Mars-van Krevelen mechanism. However, many outstanding questions remain unanswered regarding the atomic-scale structure and dynamic meta-stability (i.e., fluxional behavior) of the interface $\textit{during catalysis}$. Here, we employ aberration-corrected $\textit{operando}$ electron microscopy to visualize the structural dynamics occurring at and near Pt/CeO$_{2…
A home made DSP-controlled scanning probe microscope (SPM) system has been developed and its utilization as a tool for lithography on nanometer scale is reported. User-friendly graphic interface allows to directly perform nanolithography importing a bitmap pattern on previously-imaged sample region, otherwise moving in real time the probe using an ordinary mouse, acting as a pantograph from macroscopic down to nanometer scale, taking advantage from an absolute-positioning stage. Any measured property of the sample can be used by the lithographic interface to realize interactive patterning of t…
We have studied the segregation of P and B impurities during oxidation of the Si(100) surface by means of combined static and dynamical first-principles simulations based on density functional theory. In the bare surface, dopants segregate to chemically stable surface sites or to locally compressed subsurface sites. Surface oxidation is accompanied by development of tensile surface stress up to 2.9 N/m at a coverage of 1.5 monolayers of oxygen and by formation of oxidised Si species with charges increasing approximately linearly with the number of neighbouring oxygen atoms. Substitutional P an…
Silicon together with its native oxide SiO$_2$ was recognized as an outstanding material system for the semiconductor industry in the 1950s. In state-of-the-art device technology, SiO$_2$ is widely used as an insulator in combination with high-$k$ dielectrics such as HfO$_2$, demanding fabrication of ultra-thin interfacial layers. The classical standard model derived by Deal and Grove accurately describes the oxidation of Si in a progressed stage, however, strongly underestimates growth rates for thin oxide layers. Recent studies report a variety of oxidation mechanisms during the growth of ox…
Graphene epoxide, with oxygen atoms lining up on pristine graphene sheets, is investigated theoretically in this Letter. Two distinct phases: metastable clamped and unzipped structures are unveiled in consistence with experiments. In the stable (unzipped) phase, epoxy group breaks underneath sp2 bond and modifies the mechanical and electronic properties of graphene remarkably. The foldable epoxy ring structure reduces its Young's modulus by 42.4%, while leaves the tensile strength almost unchanged. Epoxidation also perturbs the pi state and opens semiconducting gap for both phases, with depend…
Skyrmions are magnetic bubbles with nontrivial topology envisioned as data bits for ultrafast and power-efficient spintronic memory and logic devices. They may be stabilized in heavy-metal/ferromagnetic/oxide trilayer systems. The skyrmion chirality is then determined by the sign of the interfacial Dzyaloshinskii-Moriya interaction (DMI). Nevertheless, for apparently identical systems, there is some controversy about the DMI sign. Here, we show that the degree of oxidation of the top interface and the thickness of the ferromagnetic layer play a major role. Using Brillouin light-scattering meas…
The first vapor phase self-assembled heterocatalytic structure on surface is build from cobalt 5,10,15,20 tetrakis (4-aminophenyl)-21H, 23H-porphine through imide bonds. This heterogeneous catalyst possesses essential thermal and temporal stability along with catalytic activity in oxidation processes of organic substrates.
Synergistic Effects of Phosphorus Doping and Oxygen Vacancies on Formaldehyde Oxidation over CeO$_2$(111): A First Principles Investigation
Université de Lorraine（洛林大学）；CNRS（法国国家科学研究中心）；LEMTA（材料力学与转化实验室）；Université de Monastir（莫纳斯特尔大学）；Faculté des Sciences de Monastir（莫纳斯特尔理学院）；Laboratoire de la matière condensée et nanosciences LR11ES40（凝聚态物质与纳米科学实验室 LR11ES40）；Laboratoire Lorrain de Chimie Moléculaire（洛林分子化学实验室）；Université Lyon 1（里昂第一大学）；IRCELYON（催化、材料和表面研究所）；UMR 5256（联合研究单位 5256）
University of South Carolina（南卡罗来纳大学）；Hangzhou University of Electronic Science and Technology（杭州电子科技大学）
Oxidation states are the charges of atoms after their ionic approximation of their bonds, which have been widely used in charge-neutrality verification, crystal structure determination, and reaction estimation. Currently only heuristic rules exist for guessing the oxidation states of a given compound with many exceptions. Recent work has developed machine learning models based on heuristic structural features for predicting the oxidation states of metal ions. However, composition based oxidation state prediction still remains elusive so far, which is more important in new material discovery fo…
We explore the oxidation of a single layer of black phosphorous using ab initio density functional theory calculation. We search for the equilibrium structures of phosphorene oxides, PO$_x$ with various oxygen concentrations $x$ ($0{\le}x{\le}1$). By evaluating the formation energies with diverse configurations and their vibrational properties for each of various $x$ values, we identify a series of stable oxidized structures with $x$ and confirm that the oxidation occurs naturally. We also find that oxidation makes some modes from the P-O bonds P-P bonds IR-active implying that the infrared sp…
The computational design of materials with ionic bonds poses a critical challenge to thermodynamic modeling since density functional theory yields inaccurate predictions of their formation enthalpies. Progress requires leveraging physically insightful correction methods. The recently introduced coordination corrected enthalpies (CCE) method delivers accurate formation enthalpies with mean absolute errors close to room temperature thermal energy, i.e., 25meV/atom. The CCE scheme, depending on the number of cation-anion bonds and oxidation state of the cation, requires an automated analysis of t…
We report the results of an x-ray scattering study that reveals oxidation kinetics and formation of a previously unreported crystalline phase of SnO at the liquid-vapour interface of Sn. Our experiments reveal that the pure liquid Sn surface does not react with molecular oxygen below an activation pressure of \~5.0*10-6 Torr. Above that pressure a rough solid Sn oxide grows over the liquid metal surface. Once the activation pressure has been exceeded the oxidation proceeds at pressures below the oxidation pressure threshold. The observed diffraction pattern associated with the surface oxidatio…
How unconventional oxidation state Au$^{2+}$ is stabilized in halide perovskite Cs$_4$Au$_3$Cl$_{12}$: a first-principles study of its polaron crystal nature
Silicene monolayers grown on Ag(111) surfaces demonstrate a band gap that is tunable by oxygen adatoms from semimetallic to semiconducting type. By using low-temperature scanning tunneling microscopy, it is found that the adsorption configurations and amounts of oxygen adatoms on the silicene surface are critical for band-gap engineering, which is dominated by different buckled structures in R13xR13, 4x4, and 2R3x2R3 silicene layers. The Si-O-Si bonds are the most energy-favored species formed on R13xR13, 4x4, and 2R3x2R3 structures under oxidation, which is verified by in-situ Raman spectrosc…
We report first-principles calculations that reveal the atomic forms, stability, and energy levels of carbon-related defects in SiC (0001)/SiO$_{\rm 2}$ systems. We clarify the stable position (SiC side, SiO$_{\rm 2}$ side, or just at the SiC/SiO$_{\rm 2}$ interface) of defects depending on the oxidation environment. Under an O-rich condition, the di-carbon antisite ((C$_{\rm 2}$)$_{\rm Si}$) in the SiC side is stable and critical for $n$-channel MOSFETs, whereas the di-carbon defect (Si-C-C-Si) at the interface becomes critical under an O-poor condition. Our results suggest that the oxidation…
A catalyst surface may be exposed to strain due to application of load or interfacing with a substrate with large lattice mismatch. In order to test the effect of strain on catalytic efficiency, we use Density Functional Theory +U (DFT+U) to model water oxidation on expanded and contracted surfaces of the Ni1-xFexOOH alloy, one of the best known catalysts for water splitting. We find that a low amount of iron content has a similar effect as of applying compressive strain. Due to high oxidation state of Fe4+ at the active site, the Fe-O bond is shorter than in pure FeOOH, which is beneficial fo…
Transition metal nitrides have attracted much interest of the scientific community for their intriguing properties and technological applications. Here we focus on yttrium dinitride (YN$_{2}$) and its formation and structural transition under pressure. We employed a fixed composition USPEX search to find the most stable polymorphs. We choose yttrium as a proxy for the lanthanide series because it has only $+3$ oxidation state, contrary to most transition metals. We then computed thermodynamic and dynamical stability of these structures compared to the decomposition reactions and we found that …
We have studied the interfacial Dzyaloshinskii-Moriya interaction (DMI) in a series of Pt/Co/MOx (M=Al, Gd) trilayers in which the degree of oxidation of the top Co interface is varied. To access to reliable values of the DMI strength, we have used a method based on the measurement of the saturation velocity of field driven chiral Néel domain walls. We show that the effective DMI strength in the Pt/Co/MOx trilayers varies with the oxidation degree of the Co/MOx interface. This strongly suggests that the Co/MOx interface gives a distinct contribution to the total DMI, adding to that of the Pt/C…
Synthesis, Solvent-dependent Self-Assembly and Partial Oxidation of Ultrathin Cerium Fluoride Nanoplatelets
CNRS, ENS de Lyon（法国国家科学研究中心，里昂高等师范学校）；Université Paris-Cité（巴黎西岱大学）；Institut Lumière Matière, Univ Lyon, CNRS, Université Claude Bernard Lyon 1（光物质研究所，里昂大学，法国国家科学研究中心，里昂第一大学）；Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS（固体物理实验室，巴黎萨克雷大学，法国国家科学研究中心）
We report static and dynamic first-principles calculations that provide atomistic pictures of the initial stage of the oxidation processes occurring at the ($11\bar20$) surface of 4H-SiC. Our results unveil reaction pathways and their associated free-energy barriers for the adsorption of oxygen and the desorption of carbon atoms. We find that oxygen adsorption shows structural multi-stability and that the surface-bridge sites are the most stable and crucial sites for subsequent oxidation. We find that an approaching O$_2$ molecule is adsorbed, then dissociated and finally migrates toward these…
Machine Learning Accelerated Computational Surface-Specific Vibrational Spectroscopy Reveals Oxidation Level of Graphene in Contact with Water
State Key Laboratory of Physical Chemistry of Solid Surfaces, iChEM, College of Chemistry and Chemical Engineering, Discipline of Intelligent Instrument and Equipment, Xiamen University（厦门大学化学化工学院物理化学固体表面国家重点实验室）；Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University（厦门大学彭唐沙微纳科学技术研究院）；Institute of Artificial Intelligence, Xiamen University（厦门大学人工智能研究院）
In recent years due to improvements in calculation methods and increased computer power, it has become possible to perform first-principles investigations for ``simple'' chemical reactions at surfaces. We have carried out such studies for the catalytic oxidation of CO at transition metal surfaces, in particular, at the ruthenium surface for which unusual behavior compared to other transition metal catalysts has been reported. High gas pressure catalytic reactor experiments have revealed that the reaction rate over Ru for oxidizing conditions is the highest of the transition metals considered -…
The Anode Hydrogen Release (AHR) mechanism at interfaces is responsible for the generation of defects, that traps charge carriers and can induce dielectric breakdown in Metal-Oxide-Semiconductor Field Effect Transistors. The AHR has been extensively studied at Si/SiO$_2$ interfaces but its characteristics at metal-silica interfaces remain unclear. In this study, we performed Density Functional Theory (DFT) calculations to study the hydrogen release mechanism at the typical Al/SiO$_2$ metal-oxide interface. We found that interstitial hydrogen atoms can break interfacial Al-Si bonds, passivating…
A number of electronic devices involve metal/oxide interfaces in their structure where the oxide layer plays the role of electrical insulator. As the downscaling of devices continues, the oxide thickness can spread over only a few atomic layers, making the role of interfaces prominent on its insulating properties. The prototypical Al/SiO2 metal/oxide interface is investigated using first principle calculations, and the effect of the interfacial atomic bonding is evidenced. It is shown that the interface bonding configuration critically dictates the mechanical and electronic properties of the i…
