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arXiv 1210.7899cond-mat.mtrl-sci
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热氧化的原子分子竞争机理

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

Xiao Shen, Sokrates T. Pantelides

摘要:

SiC和Si的氧化为研究氧化机理提供了独特的机会,因为产物是相同的SiO2。硅的氧化遵循线性-抛物线规律,氧化剂为分子氧。SiC的氧化遵循相同的线性-抛物线规律,但具有不同的速率和活化能,并表现出更强的面依赖性。利用第一性原理计算的结果,我们表明,原子和分子氧是氧化剂的Si和C面SiC分别。比较SiC和Si,我们阐明了界面如何控制原子和分子机制之间的竞争。

英文摘要:

The oxidation of SiC and Si provide a unique opportunity for studying oxidation mechanisms because the product is the same, SiO2. Silicon oxidation follows a linear-parabolic law, with molecular oxygen identified as the oxidant. SiC oxidation obeys the same linear-parabolic law but has different rates and activation energies and exhibits much stronger face-dependence. Using results from first-principles calculations, we show that atomic and molecular oxygen are the oxidant for Si- and C-face SiC respectively. Comparing SiC with Si, we elucidate how the interface controls the competition between atomic and molecular mechanisms.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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