硅纳米结构中延迟氧化效应的理解
Understanding of the Retarded Oxidation Effects in Silicon Nanostructures
摘要：
提出了对硅纳米结构氧化过程中观察到的延迟氧化现象的深入理解。各种硅纳米结构如纳米梁、凹/凸纳米环和纳米线的湿热氧化表现出极其不同和复杂的行为。这种影响已被调查的氧化过程中产生的机械应力解释延迟制度的建模。该模型描述了硅纳米线的氧化动力学下降到几个纳米，同时预测合理的和物理应力水平在Si/SiO $_{2}$界面，通过正确地考虑到通过塑性流动在氧化硅的松弛效应。
英文摘要：
In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings and nanowires exhibits an extremely different and complex behavior. Such effects have been investigated by the modeling of the mechanical stress generated during the oxidation process explaining the retarded regime. The model describes the oxidation kinetics of silicon nanowires down to a few nanometers while predicting reasonable and physical stress levels at the Si/SiO$_{2}$ interface by correctly taking into account the relaxation effects in silicon oxide through plastic flow.
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