了解受控击穿期间的导电和纳米孔形成
Understanding Electrical Conduction and Nanopore Formation During Controlled Breakdown
摘要：
受控击穿最近已经成为一种非常有吸引力的技术来制造用于广泛的生物传感应用的固态纳米孔。该技术依赖于在膜上施加约0.6-1 V/nm的电场以感应电流，并最终击穿电介质。然而，在受控击穿期间如何通过电介质发生电传导的详细描述尚未报道。在这里，我们研究了可控击穿过程中SiN $_x$膜的导电性和纳米孔的形成。我们表明，取决于膜的化学计量，导电性受到限制的氧化反应，必须发生在膜-电解质界面（Si丰富的SiN $_x$），或电子输运通过电介质（化学计量Si $_3$ N $_4$）。我们提供了几个重要的影响，从理解这一过程，这将有助于在未来几年内进一步发展控制击穿，特别是扩展这种技术集成纳米孔与芯片上的纳米结构。
英文摘要：
Controlled breakdown has recently emerged as a highly appealing technique to fabricate solid-state nanopores for a wide range of biosensing applications. This technique relies on applying an electric field of approximately 0.6-1 V/nm across the membrane to induce a current, and eventually, breakdown of the dielectric. However, a detailed description of how electrical conduction through the dielectric occurs during controlled breakdown has not yet been reported. Here, we study electrical conduction and nanopore formation in SiN$_x$ membranes during controlled breakdown. We show that depending on the membrane stoichiometry, electrical conduction is limited by either oxidation reactions that must occur at the membrane-electrolyte interface (Si-rich SiN$_x$), or electron transport across the dielectric (stoichiometric Si$_3$N$_4$). We provide several important implications resulting from understanding this process which will aid in further developing controlled breakdown in the coming years, particularly for extending this technique to integrate nanopores with on-chip nanostructures.
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