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arXiv 1810.03072cond-mat.mtrl-sci
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ZnSe中从头算半经典电子输运:非弹性散射机制的作用

Ab-initio semi-classical electronic transport in ZnSe: The role of inelastic scattering mechanisms

Anup Kumar Mandia, Renuka Patnaik, Bhaskaran Muralidharan, Seung-Cheol Lee, Satadeep Bhattacharjee

摘要:

我们提出了一个详细的从头计算研究半经典输运n-ZnSe使用罗德的迭代方法。深入讨论了各种n-ZnSe样品在低温和室温下的电离杂质、压电、声学形变和极性光学声子散射的夹杂及其相对重要性。我们已经清楚地注意到,非弹性极性光学声子散射是最主要的散射机制在大多数的温度范围。我们的结果是在很好的协议与实验数据的迁移率和电导率在不同的掺杂浓度在较宽的温度范围内。我们还比较了这些结果与松弛时间近似(RTA),这清楚地证明了迭代方法的优越性RTA。

英文摘要:

We present a detailed ab-initio study of semi-classical transport in n-ZnSe using Rode's iterative method. Inclusion of ionized impurity, piezoelectric, acoustic deformation and polar optical phonon scattering and their relative importance at low and room temperature for various n-ZnSe samples are discussed in depth. We have clearly noted that inelastic polar optical phonon scattering is the most dominant scattering mechanism over most of the temperature region. Our results are in good agreement with the experimental data for the mobility and conductivity obtained at different doping concentrations over a wider range of temperatures. Also we compare these results with the ones obtained with relaxation time approximation (RTA) which clearly demonstrate the superiority of the iterative method over RTA.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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