Momentum-dependent resonant inelastic X-ray scattering at the Si K edge of 3C-SiC: A theoretical study on a relation between spectra and valence band dispersion
Yunori Nisikawa, Muneharu Ibuki, Manabu Usuda
备注：
8 pages, 8 figures. submitted to Physical Review B. Please also see following related paper: arXiv:cond-mat/0311008 and arXiv:cond-mat/0405009
We theoretically demonstrate that a resonant inelastic x-ray scattering
(RIXS) with a sizable momentum transfer can be utilized to study valence band dispersion for broad band materials. We take RIXS at the Si K edge of 3C-SiC as a typical example. The RIXS spectra are calculated by systematically changing the transferred momentum, an incident photon polarization and an incident photon energy, on the basis of an ab initio calculation. We find that the spectra depend heavily on both the transferred momentum and the incident photon polarization, and the peaks in the spectra correspond to the energies of the valence bands. We conclude that the information on the energy dispersion of valence bands can be extracted from the transferred momentum dependence of the RIXS spectra. These findings lead to further application for RIXS when investigating the band structure of broad band materials.
Measurement of the background in Auger-photoemission coincidence spectra (APECS) associated with inelastic or multi-electron valence band photoemission processes
X-ray magnetic circular dichroism and resonant inelastic X-ray scattering explained: role of many-body correlation and valence fluctuations
Seoul National University（首尔大学）；Institute for Basic Science（基础科学研究院）；SLAC National Accelerator Laboratory（斯坦福直线加速器国家实验室）；Fudan University（复旦大学）；University of California, Davis（加州大学戴维斯分校）；University of Illinois（伊利诺伊大学）；National Institute of Standards and Technology（美国国家标准与技术研究院）
Spin- and Angle-resolved Photoelectron Spectroscopy Study of the Quantum Spin Hall Insulator Bismuthene and its Precursor Phase
Chemnitz University of Technology（开姆尼茨工业大学）；Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN)（纳米膜材料、架构与集成研究中心）；MAX IV Laboratory（MAX IV 实验室）；Lund University（隆德大学）
Revealing the site selective local electronic structure of Co$_{3}$O$_{4}$ using $2p3d$ resonant inelastic X-ray scattering
本文用Co $2p3d$共振非弹性X射线散射（RIXS）研究了混合价氧化物Co $_3$ O $_4$。通过在Co $^{2+}$和Co $^{3+}$离子上设置共振边，选择性地探测了两个Co位上的$dd$激发，提供了Co $_3$ O $_4$的局部电子结构的详细信息. $2p3d$ RIXS结果显示四面体Co $^{2+}$位点的$^4$ T $_{2}$激发态在0.5 eV处，超出光学吸收光谱的辨别能力。此外，在1.3 eV处激发态的$^3$ T $_{2g}$被唯一地鉴定为八面体Co $^{3+}$位点。在多重态模拟的指导下，确定Co $^{2+}$和Co $^{3+}$的基态特征分别为高自旋$^4$ A $_{2}$（T $_d$）和低自旋$^1$ A $_{1g}$（O $_h$）.这表明Co $^{2+}$位在低温下是Co $_3$ O $_4$中的磁活性位。配体-金属电荷转移分析表明，在Co $^{3+}$位点处Co和O离子之间形成强共价键，而Co $^{2+}$是离子型的。
Connections between resonant inelastic x-ray scattering and complementary x-ray spectroscopies: probing excitons at Al K and L$_1$ edges of $α$-Al$_2$O$_3$
