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arXiv 0904.3937cond-mat.mtrl-sci
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Cu $_2$ O电子结构的共振非弹性X射线散射研究

Resonant inelastic x-ray scattering study of the electronic structure of Cu$_2$O

Young-June Kim, J. P. Hill, H. Yamaguchi, T. Gog, D. Casa

摘要:

用共振非弹性X射线散射研究了半导体氧化亚铜$\rm Cu_2O$的电子结构。当入射的X射线能量被调谐到Cu K-吸收边时,观察到对应于价带和导带之间的电子跃迁的光谱特征的大的增强。在6.5eV处的特征可以很好地描述为从主要为Cu 3d特征的占据态到混合3d、4s和2 p特征的未占据态的带间跃迁。此外,绝缘带隙被观察到,并沿$Γ-R$方向测量的下限的动量依赖性。这被发现是在良好的协议与角分辨光电能谱测量的价带色散。

英文摘要:

A resonant inelastic x-ray scattering study of the electronic structure of the semiconductor cuprous oxide, $\rm Cu_2O$, is reported. When the incident x-ray energy is tuned to the Cu K-absorption edge, large enhancements of the spectral features corresponding to the electronic transitions between the valence band and the conduction band are observed. A feature at 6.5 eV can be well described by an interband transition from occupied states of mostly Cu 3d charactor to unoccupied states with mixed 3d, 4s and 2p character. In addition, an insulating band gap is observed, and the momentum dependence of the lower bound is measured along the $Γ-R$ direction. This is found to be in good agreement with the valence band dispersion measured with angle-resolved photoemission spectroscopy.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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