Two extended cavity laser diodes are phase-locked, thanks to an intra-cavity electro-optical modulator. The phase-locked loop bandwidth is on the order of 10 MHz, which is about twice larger than when the feedback correction is applied on the laser current. The phase noise reaches -120 dBrad$^2$/Hz at 10 kHz. This new scheme reduces the residual laser phase noise, which constitutes one of the dominant contributions in the sensitivity limit of atom interferometers using two-photon transitions.
We demonstrate an 8 by 14 Gbps compatible WDM link based on a single-section semiconductor mode-locked laser, silicon photonics resonant ring modulators and joint channel reamplification with a semiconductor optical amplifier operated in the linear regime. Individual channels reach a data rate of 25 Gbps with signal quality-factors above 7.
We report second harmonic generation from a titanium indiffused lithium niobate waveguide resonator device whose cavity length is locked to the fundamental pump laser using an on-chip phase modulator. The device remains locked for more than 5 minutes, producing more than 80\% of the initial second harmonic power. The stability of the system is seen to be limited by DC-drift, a known effect in many lithium niobate systems that include deposited electrodes. The presented device explores the suitability of waveguide resonators in this platform for use in larger integrated networks.
We demonstrate phase lock of two >1.6W Titanium:sapphire lasers with a phase noise of -138dBc/Hz at 1MHz from the carrier, using an intra-cavity electro-optic phase modulator. The residual phase variance is 2.5 10^(-8)rad^2 integrated from 1Hz to 10kHz. Instantaneous offset frequency steps of up to 4MHz are achieved within 200ns. Simultaneous atom interferometers can make full use of this ultra-low phase noise in differential measurements by suppressing common influences from vibration of optics.
We demonstrate ultrashort pulse generation from a fluoride fiber laser co-doped with holmium and praseodymium. To date the majority of work focused on short pulse generation from this class of fiber laser has employed loss modulators in the cavity, both real and artificial. In this work we alternatively employ a frequency shifting element: an acousto-optic modulator (AOM) in the cavity. This results in mode-locked output of sub-5 ps pulses with 10 nJ of energy at a center wavelength of 2.86 μm, and a pulse repetition frequency of 30.1 MHz, equating to a peak power of 1.9 kW. Additional experim…
It is demonstrated that RF current modulation of a frequency stabilized injection-locked diode laser allows the stabilization of an optical cavity to adjustable lengths, by variation of the RF frequency. This transfer cavity may be used to stabilize another laser at an arbitrary wavelength, in the absence of atomic or molecular transitions suitable for stabilization. Implementation involves equipment and techniques commonly used in laser cooling and trapping laboratories, and does not require electro- or acousto-optic modulators. With this technique we stabilize a transfer cavity using a RF cu…
We demonstrate a Raman laser system based on phase modulation technology and phase feedback control. The two laser beams with frequency difference of 6.835 GHz are modulated using electro-optic and acousto-optic modulators, respectively. Parasitic frequency components produced by the electro-optic modulator are filtered using a Fabry-Perot Etalon. A straightforward phase feedback system restrains the phase noise induced by environmental perturbations. The phase noise of the laser system stays below -125 rad2/Hz at frequency offset higher than 500 kHz. Overall phase noise of the laser system is…
We have demonstrated a frequency-stabilized tunable 318.6 nm ultraviolet (UV) laser system for the single-photon 6S1/2 - nP (n = 70 ~ 100) Rydberg excitation of cesium atoms. The 637.2 nm laser produced by single-pass sum frequency generation from two infrared fiber lasers is offset locked to a high-finesse ultra-low expansion (ULE) optical cavity placed in ultra-high vacuum using the electronic sideband locking technique. The generated 318.6 nm UV laser via cavity-enhanced second-harmonic generation can be continuously tuned over 4 GHz by indirectly changing modulation frequency on the electr…
We present a method of phase-locking any number of continuous-wave lasers to an optical frequency comb (OFC) that enables independent frequency positioning and control of each laser while still maintaining lock to the OFC. The scheme employs an acousto-optic modulator (AOM) in a double pass configuration added to each laser before its light is compared by optical heterodyne with the comb. The only requirement is that the tuning bandwidth of the double pass AOM setup be larger than half the OFC repetition rate. We demonstrate this scheme and achieve an arbitrary frequency tuning precision, a tu…
We report on an optical frequency comb with 14nm (~1.8 THz) spectral bandwidth at -3 dB level that is generated using a passively mode-locked quantum-well (QW) laser in photonic integrated circuits (PICs) fabricated through an InP generic photonic integration technology platform. This 21.5-GHz colliding-pulse mode-locked laser cavity is defined by on-chip reflectors incorporating intracavity phase modulators followed by an extra-cavity SOA as booster amplifier. A 1.8-THz-wide optical comb spectrum is presented with ultrafast pulse that is 0.35-ps-wide. The radio frequency beat note has a 3-dB …
Proper operation of electro-optic I/Q modulators rely on precise adjustment and control of the relative phase biases between the modulator's internal interferometer arms. We present an all-analog phase bias locking scheme where error signals are obtained from the beat between the optical carrier and optical tones generated by an auxiliary 2 MHz RF-tone to lock the phases of all three involved interferometers for operation up to 10 GHz. With the developed method, we demonstrate an I/Q modulator in carrier-suppressed single-sideband mode, where the suppressed carrier and sideband are locked at o…
We use a waveguide-based electro-optic phase modulator, driven by a nanosecond-timescale arbitrary waveform generator, to produce an optical spectrum with an arbitrary pattern of sidebands. A programmed sequence of linear voltage ramps, with various slopes, is applied to the modulator. The resulting phase ramps give rise to sidebands whose frequency offsets relative to the carrier are equal to the slopes of the corresponding linear phase ramps. This extension of the serrodyne technique provides multi-line spectra with sideband spacings in the 100 MHz range.
We present full phase stabilization of an amplified Yb:fiber femtosecond frequency comb using an intra-cavity electro-optic modulator and an acousto-optic modulator. These transducers provide high servo bandwidths of 580 kHz and 250 kHz for frep and fceo, producing a robust and low phase noise fiber frequency comb. The comb was self-referenced with an f - 2f interferometer and phase locked to an ultra-stable optical reference used for the JILA Sr optical clock at 698 nm, exhibiting 0.21 rad and 0.47 rad of integrated phase errors (over 1 mHz - 1 MHz) respectively. Alternatively, the comb was l…
We describe a system for generating frequency-chirped and amplitude-shaped pulses on time scales from sub-nanosecond to ten nanoseconds. The system starts with cw diode-laser light at 780 nm and utilizes fiber-based electro-optical phase and intensity modulators, driven by an arbitrary waveform generator, to generate the shaped pulses. These pulses are subsequently amplified to several hundred mW with a tapered amplifier in a delayed double-pass configuration. Frequency chirps up to 5 GHz in 2 ns and pulse widths as short as 0.15 ns have been realized.
We utilize various techniques to characterize the residual phase modulation of a fiber-based Mach-Zehnder electro-optical intensity modulator. A heterodyne technique is used to directly measure the phase change due to a given change in intensity, thereby determining the chirp parameter of the device. This chirp parameter is also measured by examining the ratio of sidebands for sinusoidal amplitude modulation. Finally, the frequency chirp caused by an intensity pulse on the nanosecond time scale is measured via the heterodyne signal. We show that this chirp can be largely compensated with a sep…
We report on the characterization of a commercial-core fiber-based frequency comb equipped with an intracavity electro-optic modulator (EOM). We investigate the relationship between the noise of the pump diode and the laser relative intensity noise (RIN) and demonstrate the use of a low noise current supply to substantially reduce the laser RIN. By measuring several transfer functions, we evaluate the potentiality of the EOM for comb repetition rate stabilization. We also evaluate the coupling to other relevant parameters of the comb. From these measureemnts, we infer the capabilities of the f…
In this paper, we quantitatively analyzed the trade-off between energy per bit for switching and modulation bandwidth of classical electro-optic modulators. A formally simple energy-bandwidth limit (Eq. 10) is derived for electro-optic modulators based on intra-cavity index modulation. To overcome this limit, we propose a dual cavity modulator device which uses a coupling modulation scheme operating at high bandwidth (> 200 GHz) not limited by cavity photon lifetime and simultaneously features an ultra-low switching energy of 0.26 aJ, representing over three orders of magnitude energy consumpt…
The newly-emergent two-dimensional topological insulators (TIs) have shown their unique electronic and optical properties, such as good thermal management, high nonlinear refraction index and ultrafast relaxation time. Their narrow energy band gaps predict their optical absorption ability further into the mid-infrared region and their possibility to be very broadband light modulators ranging from the visible to the mid-infrared region. In this paper, a mid-infrared mode-locked fluoride fiber laser with TI Bi2Te3 nano-sheets as the saturable absorber is presented. Continuous wave lasing, Q-swit…
The performance of a dual parallel differential Mach-Zehnder modulator broadband linearization architecture is analysed. This study provides experimental and analytical results showing an enhancement up to 20 dB in the 3rd-order intermodulation distortion factor at 5 GHz using RF and optical asymmetrical feeding factors.
One of the technical barriers impeding the wide applications of integrated photonic circuits is the lack of ultracompact, high speed, broadband electro-optical (EO) modulators, which up-convert electronic signals into high bit-rate photonic data. In addition to direct modulation of lasers, EO modulators can be classified into (i) phase modulation based on EO effect or free-carrier injection, or (ii) absorption modulation based on Franz-Keldysh effect or quantum-confined Stark effect. Due to the poor EO properties of regular materials, a conventional EO modulator has a very large footprint. Bas…
Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and inter-chip communications. Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption and modulation depth. However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material fo…
Modern communication networks require high performance and scalable electro-optic modulators that convert electrical signals to optical signals at high speed. Existing lithium niobate modulators have excellent performance but are bulky and prohibitively expensive to scale up. Here we demonstrate scalable and high-performance nanophotonic electro-optic modulators made of single-crystalline lithium niobate microring resonators and micro-Mach-Zehnder interferometers. We show a half-wave electro-optic modulation efficiency of 1.8V$\cdot$cm and data rates up to 40 Gbps.
The present work demonstrates an electro-optic polymer based Mach-Zehnder (MZ) modulator fabricated utilizing advanced ultraviolet (UV) imprinting and aligned ink-jet printing technologies for patterning and layer deposition. The bottom electrode layer is designed and directly ink-jet printed on the substrate to form the patterned layer. The waveguide structure is formed into a bottom cladding polymer using a transparent flexible mold based UV imprinting method. All other layers can be ink-jet printed. The top electrode is aligned and printed over the Mach-Zehnder arm. The modulator demonstrat…
Electro-optic modulators with low voltage and large bandwidth are crucial for both analog and digital communications. Recently, thin-film lithium niobate modulators have enable dramatic performance improvements by reducing the required modulation voltage while maintaining high bandwidths. However, the reduced electrode gaps in such modulators leads to significantly higher microwave losses, which limit electro-optic performance at high frequencies. Here we overcome this limitation and achieve a record combination of low RF half-wave voltage of 1.3 V while maintaining electro-optic response with…
We derive equations that quantify silicon Mach-Zehnder Interferometer (MZI) modulator impact upon optical link budget for NRZ transmissions based solely upon modulator extinction ratio (ER), the efficiency-loss figure of merit (FOM), and peak-to-peak drive voltage (Vpp). Our modulator link penalty equations transform the modulator efficiency-loss FOM from a simple device quality metric into a means of predicting how design and technology choices impact system margin. Our results indicate that, with a 17.8 V-cm FOM and 1 Vpp drive, designing an MZI to have an ER anywhere within the large range …
High performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications. Existing integrated modulators, however, suffer from reduced modulation efficiency or bandwidth at low temperatures because they rely on tuning mechanisms that degrade with decreasing temperature. Graphene modulators are a promising alternative, since graphene's intrinsic carrier mobility increases at low temperature. Here we demonstrate an integrated graphene-based electro-optic modulator whose 14.7 GHz bandwidth at 4.9 K exceeds the room-temperat…
We experimentally demonstrate several electro-optical modulators based on transparent conducting oxides. Our previous work demonstrated the modulator structure on glass substrate with broadband bias polarity-dependent modulation. Further exploration shows similar modulation effect of the modulator on quartz and silicon substrate.
Compact electro-optic (EO) modulators with large extinction ratios, low-switching energies, and high operation speeds are desirable for integrated photonic and linear optical computing. Traditional 3D semiconductors and dielectrics are unsuitable for achieving such modulators due to the small magnitude of EO effects in them. Excitonic 2D semiconductors present a unique opportunity in this regard given their large and tunable optical constants near the excitonic resonances. However, strategies for confining and electrically tuning the excitons into compact EO modulators have not been realized t…
The repetition rate stabilization of an optical frequency comb based on diode-pumped solid-state laser technology is demonstrated using an intra-cavity electro-optic modulator. The large feedback bandwidth of such modulators allows disciplining the comb repetition rate on a cavity-stabilized continuous-wave laser with a locking bandwidth up to 700 kHz. This surpasses what can be achieved with any other type of actuator reported so far. An in-loop integrated phase noise of 133 mrad has been measured and the PM-to-AM coupling of the electro-optic modulator has been investigated as well.
III-V heterostructure based high electron mobility transistors (HEMTs) offer superior performance as compared to CMOS silicon transistors owing to the high mobility in the 2D electron gas (2DEG) channel at the heterostructure interface. Gallium nitride (GaN) based HEMTs are also suitable for high power and high temperature applications. GaN has a rich offering of material properties spanning domains of nonlinear optics, piezoelectric micro-electro-mechanical systems (MEMS), and monolithic microwave integrated circuits (MMICs). In this paper, we propose HEMT inspired III-V electro-optic modulat…
We describe five high-voltage (60 to 550V peak to peak), high-speed (1-300ns rise time; 1.3-300MHz bandwidth) linear amplifiers for driving capacitive or resistive loads such as electro-optic modulators. The amplifiers use bipolar transistors in various topologies. Two use electron tubes to overcome the speed limitations of high-voltage semiconductors. All amplifiers have been built. Measured performance data is given for each.
Research on graphene has revealed its unique optical properties, including strong coupling with light, high-speed operation, and gate-variable optical conductivity, which promise to satisfy the needs of future electro-optic (EO) modulators. In particular, recent work demonstrated a broadband EO modulator based on the interband absorption of graphene with overall length only 40μm. However, compared with the size of on-chip electronic components it is still bulky. On-chip optical interconnects require EO modulation at the nanoscale. The key to achieve nanoscale graphene EO modulation is to great…
Graphene has generated exceptional interest as an optoelectronic material because its high carrier mobility and broadband absorption promise to make extremely fast and broadband electro-optic devices possible. Electro-optic graphene modulators reported to date, however, have been limited in bandwidth to a few GHz because of the large capacitance required to achieve reasonable voltage swings. Here we demonstrate a graphene electro-optic modulator based on the classical Zeno effect that shows drastically increased speed and efficiency. Our device operates with a 30 GHz bandwidth, over an order o…
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to co-design addressing both electrical and optical device rules. However, the millimeter-to-centimeter large footprint of many foundry-ready photonic electro-optic modulators significantly limits on-chip scaling density. To address these limitations, here we experimentally demonstrate a coupling-enhanced electro-absorption modulator by heterogeneously integrating a…
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to co-design addressing both electrical and optical device rules. However the millimeter-to-centimeter large footprint of many foundry-ready photonic electro-optic modulators significantly limits scaling density. Furthermore, modulators bear a fundamental a frequency-response to energy-sensitive trade-off, a limitation that can be overcome with coupling-based modula…
Electro optic modulators being key for many signal processing systems must adhere to requirements given by both electrical and optical constrains. Distinguishing between charge driven (CD) and field driven (FD) designs, we answer the question of whether fundamental performance benefits can be claimed of modulators based on emerging electro-optic materials. Following primary metrics, we compare the performance of emerging electro-optic and electro-absorption modulators such as graphene, transparent conductive oxides, and Si, based on charge injection with that of the legacy FD modulators, such …
We present an electro-optic modulator exploiting an array of Vanadium dioxide nanorods operating in the epsilon near regime as the active switching material integrated in a silicon waveguide. The modulator takes advantage of the insulator-to-metal transition of Vanadium dioxide to achieve a robust modulation depth of 19.7 dB/micron with a broad wavelength of operation. Using simulations, we demonstrate how the effective permittivity of the metamaterial can be tuned to a near-zero value by varying the nanorod geometry. The paper also proposes a novel hexagonal array design which achieves low in…
Photonic neural networks benefit from both the high channel capacity- and the wave nature of light acting as an effective weighting mechanism through linear optics. The neuron's activation function, however, requires nonlinearity which can be achieved either through nonlinear optics or electro-optics. Nonlinear optics, while potentially faster, is challenging at low optical power. With electro-optics, a photodiode integrating the weighted products of a photonic perceptron can be paired directly to a modulator, which creates a nonlinear transfer function for efficient operating. Here we model t…
Integrated thin-film lithium niobate (LN) electro-optic (EO) modulators of broad bandwidth, low insertion loss, low cost and high production rate are essential elements in contemporary inter-connection industries and disruptive applications. Here, we demonstrated the design and fabri-cation of a high performance thin-film LN EO modulator using photolithography assisted chemo-mechanical etching (PLACE) technology. Our device shows a 3-dB bandwidth over 50 GHz, along with a comparable low half wave voltage-length product of 2.16 Vcm. We obtain a fiber-to-fiber insertion loss of 2.6 dB.
We design and demonstrate a compact, low-power, low-dispersion and broadband optical modulator based on electro-optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW). The EO polymer is engineered for large EO activity and near-infrared transparency. The half-wave switching-voltage is measured to be Vπ=0.97V over optical spectrum range of 8nm, corresponding to a record-high effective in-device r33 of 1190pm/V and Vπ L of 0.291Vmm in a push-pull configuration. Excluding the slow-light effect, we estimate the EO polymer is poled with an ultra-high efficiency of 89pm/V in the s…
Recently High Electron Mobility Transistor (HEMT) inspired III-V electro-optic modulator topologies were proposed for realizing high speed electro-optic modulators leveraging plasma dispersion effect due to the 2D Electron Gas (2DEG) present at the III-V heterostructure interface. The 2DEG is highly confined at the interface, extending to very low depths in the bulk ($\approx$10nm) and therefore has limited spatial overlap with the optical mode. In this paper, we propose a novel modulator design to boost the 2DEG-light interaction, wherein the HEMT is embedded within a high contrast grating (H…
High efficiency and a compact footprint are desired properties for electro-optic modulators. In this paper, we propose, theoretically investigate and experimentally demonstrate a recirculating phase modulator, which increases the modulation efficiency by modulating the optical field several times in a non-resonant waveguide structure. The 'recycling' of light is achieved by looping the optical path that exits the phase modulator back and coupling it to a higher order waveguide mode, which then repeats its passage through the phase modulator. By looping the light back twice, we were able to dem…
Using the Jones formalism, it is shown that electro-optic modulators used for phase modulation generate a modulation of the output polarization induced by the difference of phase modulation depth along the crystallographic axes of the modulator. We study two consequences of this polarization modulation in the fiber setups, limiting the performance of high sensitivity measurement devices. The first one is its partial conversion into a residual amplitude modulation (RAM) within any component presenting polarization dependent losses (PDL). The second one is a new effect that consists of the disto…
A novel thin-film LiNbO3 (TFLN) electro-optic modulator is proposed and demonstrated. LiNbO3-silica hybrid waveguide is adopted to maintain low optical loss for an electrode spacing as narrow as 3 μm, resulting in a record low half-wave-voltage length product of only 1.7 V*cm. Capacitively loaded traveling-wave electrodes (CL-TWEs) are employed to reduce the microwave loss, while quartz substrate is used in place of silicon substrate to achieve velocity matching. The fabricated TFLN modulator with a 5-mm-long modulation region exhibits a half-wave-voltage of 3.4 V and merely 1.3 dB roll-off in…
We study optical cavity locking for laser stabilization through spatial modulation of the phase front of a light beam. A theoretical description of the underlying principle is developed for this method and special attention is paid to residual amplitude modulation (RAM) caused by experimental imperfections, especially the manufacture errors of the spatial phase modulator. The studied locking method owns the common advantages of the Pound-Drever-Hall method and the tilt-locking one, and it can provide a more artful way to eliminate RAM noise in phase modulation for the ultimate stability of las…
Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator used for encoding optical signals. Here, we present a GeSn electro-absorption modulator that can operate in the mid-infrared range. Importantly, this device is monolithically integrated on a silicon substrate, which provides compatibility with standard complementary metal-oxide-semiconductor technology for scalable manufacturing. By alloying Ge with Sn to e…
