PIN-PMN-PT的刻蚀特性及其在电光相位调制器中的集成
Etching Properties of PIN-PMN-PT and its Integration in Electro-Optic Phase Modulators
AI总结：
该研究系统表征PIN-PMN-PT晶体的湿法、反应离子和离子束刻蚀特性，并据此制备薄膜、单模脊形波导及集成电光相位调制器，获得19.2 V·cm的$V_πL$。
摘要：
我们研究了PIN-PMN-PT晶体的刻蚀特性，探索了多种湿法刻蚀溶液、反应离子刻蚀气体以及离子束刻蚀。系统测量了每种方法的刻蚀速率和表面粗糙度。描述并实施了一种用于获得PIN-PMN-PT薄膜的工艺流程，以便后续构建单模脊形波导。通过在波导两侧沉积电极，制备了一种集成电光相位调制器。我们的相位调制器所涉及的电光系数为$r_{51}/r_{42}$。对性能进行了测试，实现了19.2 V·cm的$V_πL$。
英文摘要：
We investigate the etching characteristics of PIN-PMN-PT crystals, exploring various wet etching solutions, reactive ion etching gases, and ion beam etching. The etch rate and surface roughness are systematically measured for each method. A process flow to obtain PIN-PMN-PT thin films is described and performed to later build a single mode rib waveguide. An integrated electro-optic phase modulator is fabricated by depositing electrodes on the sides of the waveguides. The electro-optic coefficient implied in our phase modulators is the $r_{51}/r_{42}$. The performances are tested achieving a $V_πL$ of 19.2 V$\cdot$cm.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
