A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si and the width of the transverse optical (TO) Raman peak is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for these magnitudes are used. This reduced dispersion in the predicted values of the bond-angle dispersion together with the broad agreement with its scarce direct determinations is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to reducing the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si.
Raman spectroscopic study of amorphous carbon layers for two different excitation wavelengths at room temperature. The amount of sp3 bondings is estimated to about 10% for both samples, evaluated from the ratio of the D- and G-Raman line intensities. The properties of the bondings in the two samples are discussed. Raman-spektroskopische Untersuchungen von amorphen Kohlenstoffschichten fuer zwei unterschiedliche Anregungswellenlaengen bei Raumtemperatur. Der sp3-Bindungsanteil is zu 10% fuer beide Proben bestimmt worden, ermittelt aus dem Intensitaetsverhaeltnis der D- and G-Raman-Linien. Die E…
The resonant Raman scattering in N-IR - UV range from amorphous hydrogenated carbon (a-C:H) reveal inclusions of trans-polyacetylene (trans-(CH)x) chains with approximate length of up to 120 C=C units and inclusions of poly(p-phenylene vinylene) (PPV) polymer chains. The PPV is evidenced by a strong dispersive mode at ca. 1175 cm-1. It was found that the Raman response from core Ag trans-(CH)x modes incorporated into a-C:H to changing excitation energy is identical to of free-standing chains thus facilitating identification of trans-(CH)x in complex carbonaceous materials spectra.
Strain in a material induces shifts in vibrational frequencies, which is a probe of the nature of the vibrations and interatomic potentials, and can be used to map local stress/strain distributions via Raman microscopy. This method is standard for crystalline silicon devices, but due to lack of calibration relations, it has not been applied to amorphous materials such as hydrogenated amorphous silicon (a-Si:H), a widely studied material for thin-film photovoltaic and electronic devices. We calculated the Raman spectrum of a-Si:H \ab initio under different strains $ε$ and found peak shifts $Δω=…
We present a practical method to compute the vibrational resonant Raman spectra in solids with delocalized excitations. We apply this approach to the study of tetrahedrous amorphous carbon. We determine the vibrational eigenmodes and eigenvalues using density functional theory in the local density approximation, and the Raman intensities using a tight binding approximation. The computed spectra are in good agreement with the experimental ones measured with visible and UV lasers. We analyze the Raman spectra in terms of vibrational modes of microscopic units. We show that, at any frequency, the…
The paper presents a cooperative consideration of Raman spectra of $^2$ amorphous carbons as well as the nature and type of their amorphicity. The latter was attributed to the amorphization of a new type named as enforced fragmentation. The fragments are stable graphenous molecules, which are the basic structural units (BSUs) of the solids, determining them as amorphics with molecular structure. Due to weak intermolecular interaction, BSUs, once aggregated, are the main defendants for IR absorption and Raman scattering of the solids, just justifying the consideration of them at molecular level…
The short and intermediate range order of an amorphous GeSe$_4$ alloy produced by Mechanical Alloying were studied by Reverse Monte Carlo simulations of its x-ray total structure factor and Raman scattering. The simulations were used to compute the $G^{\text{RMC}}_{\text{Ge-Ge}}(r)$, $G^{\text{RMC}}_{\text{Ge-Se}}(r)$ and $G^{\text{RMC}}_{\text{Se-Se}}(r)$ partial distribution functions and the ${\cal S}^{\text{RMC}}_{\text{Ge-Ge}}(K)$, ${\cal S}^{\text{RMC}}_{\text{Ge-Se}}(K)$ and ${\cal S}^{\text{RMC}}_{\text{Se-Se}}(K)$ partial structure factors. We calculated the coordination numbers and i…
Inclusions of sp-hybridised, trans-polyacetylene [trans-(CH)x] and poly(p-phenylene vinylene) (PPV) chains are revealed using resonant Raman scattering (RRS) investigation of amorphous hydrogenated carbon (a-C:H) films in the near IR - UV range. The RRS spectra of trans-(CH)x core Ag modes and the PPV CC-H phenylene mode are found to transform and disperse as the laser excitation energy \hbarωL is increased from near IR through visible to UV, whereas sp-bonded inclusions only become evident in UV. This is attributed to \hbarωL probing of trans-(CH)x chain inhomogeneity and the distribution of …
We report on an inelastic (Raman) light scattering study of the local structure of amorphous GeTe films. A detailed analysis of the temperature-reduced Raman spectra has shown that appreciable structural changes occur as a function of temperature. These changes involve modifications of atomic arrangements such as to facilitate the rapid amorphous-to-crystal transformation, which is the major advantage of phase-change materials used in optical data storage media. A particular structural model, supported by polarization analysis, is proposed being compatible with the experimental data as regards…
The short and intermediate range order of an amorphous Ge$_{30}$Se$_{70}$ alloy produced by Mechanical Alloying were studied by Reverse Monte Carlo simulations of its x-ray total structure factor, Raman scattering and differential scanning calorimetry. The simulations were used to compute the $G^{\text{RMC}}_{\text{Ge-Ge}}(r)$, $G^{\text{RMC}}_{\text{Ge-Se}}(r)$ and $G^{\text{RMC}}_{\text{Se-Se}}(r)$ partial distribution functions and the ${\cal S}^{\text{RMC}}_{\text{Ge-Ge}}(K)$, ${\cal S}^{\text{RMC}}_{\text{Ge-Se}}(K)$ and ${\cal S}^{\text{RMC}}_{\text{Se-Se}}(K)$ partial structure factors.…
We present a fast and simple way to determine the erosion rate and absorption coefficient of hydrogenated amorphous carbon films exposed to a hydrogen atomic source based on ex-situ Raman micro-spectroscopy. Results are compared to ellipsometry measurement. The method is applied to films eroded at different temperatures. A maximum of the erosion rate is found at ~ 450 {\degree}C in agreement with previous results. This technique is suitable for future quantitative studies on the erosion of thin carbonaceous films, especially of interest for plasma wall interactions occurring in thermonuclear f…
The paper presents a joint consideration of Raman spectra of sp2 amorphous carbons alongside with the nature and type of their amorphicity. The latter was attributed to the enforced fragmentation. The fragments, presented with size-restricted graphene domains with heteroatom necklaces in the circumference, are the basic structural units (BSUs) of the solids, determining them as amorphics with molecular structure. The standard G-D-2D pattern of Raman spectra of polycyclic aromatic hydrocarbons, sp2 amorphous carbons, graphene and/or graphite crystal is attributed to BSUs graphene domains. The m…
Under the challenge of growing a single bilayer of Bi oriented in the (111) crystallographic direction over amorphous substrates, we have studied different thicknesses of Bi thermally evaporated onto silicon oxide in order to shed light on the dominant atomic structures and their oxidation. We have employed atomic force microscope, X-ray diffraction, and scanning electron microscope approaches to demonstrate that Bi is crystalline and oriented in the (111) direction for thicknesses over 20 nm. Surprisingly, Raman spectroscopy indicates that the rhombohedral structure is preserved even for ultr…
Raman micro/macro-spectroscopy allows for a non-destructive remote analysis: body and glaze, crystalline and amorphous phases can be identified, including the nanosized pigments colouring the glaze. Last generation instruments are portable which allows for examination in museum, on sites, etc. This paper gives an overview on the potential of Raman spectrometry technique to analyze ancient ceramics and glasses. Selected glasses as well as glazes of various porcelains, celadon, faiences and potteries, representative of the different production technologies used in the Antique, European, Mediterr…
Study of amorphous alumina coatings for next-generation nuclear reactors: hightemperature in-situ and post-mortem Raman spectroscopy and X-ray diffraction
The nanostructure of hydrogenated amorphous silicon (a Si:H) is studied by a combination of small-angle X-ray (SAXS) and neutron scattering (SANS) with a spatial resolution of 0.8 nm. The a-Si:H materials were deposited using a range of widely varied conditions and are representative for this class of materials. We identify two different phases which are embedded in the a-Si:H matrix and quantified both according to their scattering cross-sections. First, 1.2 nm sized voids (multivacancies with more than 10 missing atoms) which form a superlattice with 1.6 nm void-to-void distance are detected…
We revisit here how Raman spectroscopy can be used to estimate the H content in hard hydrogenated amorphous carbon layers. The H content was varied from 2 at.% to 30 at.%, using heat treatments of a a-C:H, from room temperature to 1300 K and was determined independently using ion beam analysis. We examine the correlation of various Raman parameters and the consistency of their thermal evolution with thermo-desorption results. We identify a weak band at 860 cm-1 attributed to H bonded to C(sp2). We show that the HD/HG parameter (Height ratio between the D and G bands) is quasi-linear in the ful…
We study the kinetics of the H release from plasma-deposited hydrogenated amorphous carbon films under isothermal heating at 450, 500 and 600 {\degree}C for long times up to several days using in situ Raman microscopy. Four Raman parameters are analyzed. They allow the identification of different processes such as the carbon network reorganization and the H release from sp3 or sp2 carbon atoms and the corresponding timescales. Carbon reorganization with aromatization and loss of sp3 hybridization occurs first in 100 minutes at 500 {\degree}C. The final organization is similar at all investigat…
Disordered carbon often exhibit a complex Raman spectrum, with four to six components. Here, a large variety of disordered carbons, forming a collection of samples with a great variety of structures, are analysed using multi-wavelength Raman microscopy (325.0, 514.5, 785.0 nm). They allow us to extend Raman behaviour known for nano-crystalline graphite to amorphous carbons, (dependence with the excitation wavelength) and other known for amorphous carbons to nano-crystalline graphite, (differentiation of the smallest cluster size probed using different excitation wavelengths). Experimental spec…
The functionalization of semiconducting single-wall carbon nanotubes (SWCNTs) with luminescent sp$^{3}$ defects creates red-shifted emission features in the near-infrared and boosts their photoluminescence quantum yields (PLQYs). While multiple synthetic routes for the selective introduction of sp$^{3}$ defects have been developed, a convenient metric to precisely quantify the number of defects on a SWCNT lattice is not available. Here, we present a direct and simple quantification protocol based on a linear correlation of the integrated Raman D/G$^{+}$ signal ratios and defect densities as ex…
An amorphous Se$_{0.80}$S$_{0.20}$ alloy produced by Mechanical Alloying was studied by Raman spectroscopy, x-ray diffraction, extended x-ray absorption fine structure (EXAFS) and optical absorption spectroscopy, and also through reverse Monte Carlo simulations of its total structure factor and EXAFS data. Its vibrational modes, optical gap and structural properties as average interatomic distances and average coordination numbers were determined and compared to those found for an amorphous Se$_{0.90}$S$_{0.10}$ alloy. The results indicate that coordination numbers, interatomic distances and a…
Here, an approach to quantify the amorphous-to-disordered/crystalline transformation occurring in NaOH-activated ground granulated blast-furnace slag (GGBS) is outlined that combines atomistic modeling with in situ pair distribution function (PDF) analysis. Firstly, by using force-field molecular dynamics (MD) simulations, a detailed structural representation is generated for the amorphous GGBS that is in agreement with experimental X-ray scattering data. Use of this structural representation along with literature-derived structures for the reaction products allows for real space X-ray PDF ref…
The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analysed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain, but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si an…
Mixtures containing different weight ratios of single wall carbon nanotubes (SWCNT) and double wall carbon nanotubes (DWCNT) were prepared and studied by in-situ Raman spectroelectrochemistry. Two components of the G-prime mode in the Raman spectra, which can be resolved at high electrode potentials, were assigned to the signals from inner tubes of DWCNT and outer tubes of DWCNT together with SWCNT. The dependence of the ratios of these two components of the G-prime mode on the nominal amount of SWCNT and DWCNT in the samples was simulated so that the residual amount of SWCNT in the original D…
We have studied the effects of oxygen on hydrogenated amorphous/crystalline silicon films in terms of their structural and optical properties. Different hydrogenated silicon oxide (SiO:H) and silicon (Si:H) films are fabricated between microcrystalline and amorphous transition region. X-ray diffraction, Raman, FTIR and UV-Vis emission spectrometry have been used to characterize different films. A comparison of the results with those of different types of films like hydrogenated amorphous silicon oxide (a-SiO:H), hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon ($μ$c-Si:H) f…
Correct defect quantification in graphene samples is crucial both for fundamental and applied re-search. Raman spectroscopy represents the most widely used tool to identify defects in graphene. However, despite its extreme importance the relation between the Raman features and the amount of defects in multilayered graphene samples has not been experimentally verified. In this study we intentionally created defects in single layer graphene, turbostratic bilayer graphene and Bernal stacked bilayer graphene by oxygen plasma. By employing isotopic labelling, our study reveals substantial differenc…
Raman studies of nanocomposite SiCN thin film by sputtering showed that with an increase of substrate temperature from room temperature to 500oC, a transition from mostly sp2 graphitic phase to sp3 carbon took place which was observed from the variation of ID/IG ratio and the peak shifts. This process resulted in the growth of C3N4 and Si3N4 crystallites in the amorphous matrix which led to an increase in hardness and modulus obtained through nanoindentation. However, at a further higher temperature of 600oC, again an increase of sp2 C concentration in the film was observed and the H and E val…
We prepared thin layers of amorphous silicon by deposition of a liquid-phase polysilane precurser on glass substrate. Raman scattering provides evidence for residual tensile stress in the silicon, which is evaluated quantitatively. Under treatment with hydrofluoric acid, this stress leads to spiral cracks in the silicon. We explain the process of crack formation and examine this phenomenon both analytically and numerically, the latter with the finite element method (FEM). The FEM yields the geometry correction factor for such spiral cracks in terms of the Griffith criterion. This allows for th…
Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear optical coefficients and uncommon interband optical selection rules, making it interesting for optoelectronic and spintronic applications. In this work, we monitor the oxidation dynamics of GaSe with thicknesses ranging from 10 to 200 nm using Raman spectroscopy. In ambient temperature and humidity conditions, the intensity of all Raman modes and the luminescence decrease rapidly with moderate exposure to above-gap illumination. Concurrently, several oxidation products appear in the Raman spectra: Ga$_2$…
Amorphous silicon films prepared by electron beam evaporation have systematically and substantially greater atomic density for higher thickness, higher growth temperature, and slower deposition rate, reaching the density of crystalline Si when films of thickness greater than ~300 nm are grown at 425 $^{\circ}$C and at <1 $Å$/sec. A combination of spectroscopic techniques provide insight into atomic disorder, local strains, dangling bonds, and nanovoids. Electron diffraction shows that the short-range order of the amorphous silicon is similar at all growth temperatures, but fluctuation electron…
Rapid, non-destructive characterization of molecular level chemistry for organic matter (OM) is experimentally challenging. Raman spectroscopy is one of the most widely used techniques for non-destructive chemical characterization, although it currently does not provide detailed identification of molecular components in OM, due to the combination of diffraction-limited spatial resolution and poor applicability of peak-fitting algorithms. Here, we develop a genome-inspired collective molecular structure fingerprinting approach, which utilizes ab initio calculations and data mining techniques to…
Modification induced by 110 MeV Ni ion irradiated thin film samples of C60 on Si and quartz substrates were studied at various fluences. The pristine and irradiated samples were investigated using Raman spectroscopy, electrical conductivity and optical absorption spectroscopy. The Raman data and band gap measurements indicate that swift ions at low fluences result in formations that involve multiple molecular units like dimer or polymer. High fluence irradiation resulted in sub-molecular formations and amorphous semiconducting carbon, indicating overall damage of the fullerene molecules. These…
Optical phonons in nanoparticles with the randomness of interatomic bonds are considered both analytically and numerically. For weak dilute disorder two qualitatively different regimes of separated and overlapped levels are observed, resembling the case of random atomic masses investigated previously. At stronger and/or more dense disorder, the particles become essentially inhomogeneous, thus constituting the minimal model to describe an amorphous phase, where the picture of vibrational modes becomes more subtle. We concentrate here on the experimentally relevant case of strong disorder locate…
Resistive switching in amorphous silicon carbide (a-SiC) films deposited by a single composite target magnetron sputtering process is reported. Switching performance as a function of thickness of the films (50, 100 and 300 nm) as well as different top metal electrodes (Cu, Pt and Ag) with the bottom electrode fixed as Au, is investigated. The switching parameters (Forming Voltage, Set and Reset voltages and corresponding currents) are found to be dependent on thickness of SiC films and it is observed that 100 nm is the optimal thickness for best endurance. The interface between metal electrode…
Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV, were investigated by the Raman spectroscopy, photoluminescence (PL) spectroscopy and glancing angle x-ray diffraction (GAXRD). The Raman results from dose dependent B$^+$ implanted samples show red-shifted and asymmetrically broadened Raman line-shape for B$^+$ dose greater than $10^{14}$ ions cm$^{-2}$. The asymmetry and red shift in the Raman line-shape i…
We present the Raman microscopy ability to detect and characterize the way hydrogen is bonded with elements that will be used for ITER's plasma facing components. For this purpose we first use hydrogenated amorphous carbon samples, formed subsequently to plasma-wall interactions (hydrogen implantation, erosion, deposition...) occurring inside tokamaks, to demonstrate how this technique can be used to retrieve useful information. We pay attention in identifying which spectroscopic parameters are sensitive to the local structure (sp 3 /sp 2) and which gives information on the hydrogen content us…
We present a theoretical model to describe the double-resonant scattering process in arbitrary carbon nanotubes. We use this approach to investigate the defect-induced $D$ mode in CNTs and unravel the dependence of the $D$-mode frequency on the CNT diameter and on the energy of the resonant optical transition. Our approach is based on the symmetry of the hexagonal lattice and geometric considerations, hence the method is independent of the exact model that is chosen to describe the electronic band structure or the phonon dispersion. We finally clarify the diameter dependence of this Raman mode…
Laser-Synthesized Amorphous PdSe$_{\mathrm{2-x}}$ Nanoparticles: A Defect-Rich Platform for High-Efficiency SERS, Photocatalysis, and Photothermal Conversion
Low-energy ion beam modification was proposed to create graphene on the top of the insulated diamond-like carbon films. In such low-temperature fabrication process the surface of the amorphous carbon could crystallize to graphene as a result of point defect creation and enhanced diffusion caused by the ion bombardment. In the experiment 130 eV argon ion irradiation was used. After the modification the resistivity of the sample surface drops. Raman spectra of the samples measured at 633 nm showed partial crystallization and were similar to the spectra of defected graphene. This result is very e…
Silicon nanocrystals are produced using a two-stage gold ion implantation technique. First stage implantation using low energy ions leads to the formation of an amorphous Si (a-Si) layer. A subsequent high energy Au irradiation in the second stage is found to produce strained Si NCs. An annealing at a temperature as low as 500$^o$C is seen to result in strain free NCs showing quantum confinement effects. Higher temperature annealing of the samples is found to result in growth in size from recrystallization of the a-Si matrix. Raman Scattering, X-ray diffraction (XRD) and Rutherford Backscatter…
Energy dissipation in amorphous coatings severely affects high-precision optical and quantum transducers. In order to isolate the source of coating loss, we performed an extensive study of Raman scattering and mechanical loss of a thermally-treated sputtered silica coating. Our results show that loss is correlated with the population of three-membered rings of Si-O$_4$ tetrahedral units, and support the evidence that thermal treatment reduces the density of metastable states separated by a characteristic energy of about 0.5 eV, in favour of an increase of the states separated by smaller activa…
We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy lower than 80 eV. After e-beam irradiation, it is found that the D peak, I(D), appears in the Raman spectrum, indicating defect formation in graphene. The evolution of I(D)/I(G) follows the amorphization trajectory with increasing irradiation dose, indicating that graphene goes through a transforma…
