We report the observations of spontaneous Raman scattering in silicon photonic crystal waveguides. Continuous-wave measurements of Stokes emission for both wavelength and power dependence is reported in single line-defect waveguides in hexagonal lattice photonic crystal silicon membranes. By utilizing the Bragg gap edge dispersion of the TM-like mode for pump enhancement and the TE-like fundamental mode-onset for Stokes enhancement, the Stokes emission was observed to increase by up to five times in the region of slow group velocity. The results show explicit nonlinear enhancement in a silicon photonic crystal slow-light waveguide device.
We theoretically investigate several types of plasmonic slot waveguides for enhancing the measured signal in Raman spectroscopy, which is a consequence of electric field and Purcell factor enhancements, as well as an increase in light-matter interaction volume and the Raman signal collection efficiency. An intuitive methodology is presented for calculating the accumulated Raman enhancement factor of an ensemble of molecules in waveguide sensing, which exploits an analytical photon Green function expansion in terms of the waveguide normal modes, and we combine this with a quantum optics formali…
We propose an integrated surface enhanced Raman scattering (SERS) chip based on liquid-core waveguide with total reflection, through which the depression of leaky mode enable a long propagating distance. An Raman enhancement factor for rhodamine 6G of 2.5*105 is obtained, and a excellent repeatability is shown. The peaks in the SERS spectrum of DNA of silkworm clearly illustrate the information of the molecule structure. The integration of the SERS substrate, micro-fluid, and liquid-core waveguide make such a SERS chip attractive for biochemical detection with high performance.
We investigate for the first time the enhancement of the stimulated Raman scattering in slow-light Silicon-on-Insulator (SOI) photonic crystal line defect waveguides. By applying the Bloch-Floquet formalism to the guided modes in a planar photonic crystal, we develop a formalism that relates the intensity of the down-shifted Stokes signal to the pump intensity and the modal group velocities. The formalism is then applied to two prospective schemes for enhanced stimulated Raman generation in slow-light photonic crystal waveguides. The results demonstrate a maximum factor of 10^4 (66,000) enhanc…
We review an on-chip approach for spontaneous Raman spectroscopy and Surface Enhanced Raman Spectroscopy (SERS) based on evanescent excitation of the analyte as well as evanescent collection of the Raman signal using Complementary Metal Oxide Semiconductor (CMOS) compatible single mode waveguides. The signal is either directly collected from the analyte molecules or via plasmonic nanoantennas integrated on top of the waveguides. Flexibility in the design of the geometry of the waveguide, and/or the geometry of the antennas, enables optimization of the collection efficiency. Furthermore the sen…
Understanding the physical mechanisms of the refractive index modulation induced by femtosecond laser writing is crucial for tailoring the properties of the resulting optical waveguides. In this work we apply polarized Raman spectroscopy to study the origin of stress-induced waveguides in diamond, produced by femtosecond laser writing. The change in the refractive index induced by the femtosecond laser in the crystal is derived from the measured stress in the waveguides. The results help to explain the waveguide polarization sensitive guiding mechanism, as well as providing a technique for the…
We report evidence of beam cleanup during stimulated Raman scattering in silicon. An amplified near-diffraction-limited Stokes beam is obtained from a severely aberrated pump beam.
Continuous-wave Raman amplification in silicon waveguides with negative electrical power dissipation is reported. It is shown that a p-n junction can simultaneously achieve carrier sweep-out leading to net continuous-wave gain, and electrical power generation. The approach is also applicable to silicon Raman lasers and other third-order nonlinear optical devices.
We propose a scheme to realize controlled phase gate between two single photons through a single quantum dot in slow-light silicon photonic crystal waveguide. Enhanced Purcell factor and beta factor lead to high gate fidelity over broadband frequencies compared to cavity-assisted system. The excellent physical integration of this silicon photonic crystal waveguide system provides tremendous potential for large-scale quantum information processing.
The third-order optical nonlinearity in optical waveguides has found applications in optical switching, optical wavelength conversion, optical frequency comb generation, and ultrafast optical signal processing. The development of an integrated waveguide platform with a high nonlinearity is therefore important for nonlinear integrated photonics. Here, we report the observation of an enhancement in the nonlinearity of an air-cladding silicon pedestal waveguide. We observe enhanced nonlinear spectral broadening compared to a conventional silicon-on-insulator waveguide. At the center wavelength of…
We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dioxide, silicon nitride, or aluminum oxide, and by measuring the electro-optic behavior of ring resonators, we characterize the cladding-dependent and capacitively-induced free-carrier effects in each of these waveguides. By comparing our measured data with simulation results, we confirm that the observed voltage dependencies of the transmission spectra are due to changes in the concentrations of holes and electrons within the semiconductor waveguide, and we show for the first time how strongly these…
We propose the use of silicon graphene waveguides to implement a tunable broadband microwave photonics phase shifte based on integrated ring cavities. Numerical computation results show the feasibility for broadband operation over 40 GHz bandwidth and full 360 degree radiofrequency phase-shift with a modest voltage excursion of 0.12 volt.
We theoretically characterize the free-carrier plasma dispersion effect in fully-etched silicon waveguides, with various dielectric material claddings, due to fixed and interface charges at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage (C-V) characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain (FDTD) method s…
We demonstrate low loss ridge waveguides and the first ring resonators for the mid-infrared, for wavelengths ranging from 5.4 to 5.6 μm. Structures were fabricated using electron-beam lithography on the silicon-on-sapphire material system. Waveguide losses of 4.0 +/- 0.7 dB/cm are achieved, as well as Q-values of 3.0 k.
We present a new approach to long range coupling based on a combination of adiabatic passage and lateral leakage in thin shallow ridge waveguides on a silicon photonic platform. The approach enables transport of light between two isolated waveguides through a mode of the silicon slab that acts as an optical bus. Due to the nature of the adiabatic protocol, the bus mode has minimal population and the transport is highly robust. We prove the concept and examine the robustness of this approach using rigorous modelling. We further demonstrate the utility of the approach by coupling power between t…
We demonstrate for the first time a mid infrared silicon Raman amplifier. Amplification of 12 dB is reported for a signal at 3.39 micron wavelength. The active medium was a 2.5 cm long silicon sample that was pumped with 5ns pulses at 2.88 micron. The absence of the nonlinear losses which severely limit the performance of silicon Raman devices in the near infrared combined with unsurpassed crystal quality, high thermal conductivity render silicon a very attractive Raman medium. Such a technology can potentially extend silicon photonics application beyond data communication in the near infrared…
Recent advances in design and fabrication of photonic-phononic waveguides have enabled stimulated Brillouin scattering (SBS) in silicon-based platforms, such as under-etched silicon waveguides and hybrid waveguides. Due to the sophisticated design and more importantly high sensitivity of the Brillouin resonances to geometrical variations in micro- and nano-scale structures, it is necessary to have access to the localized opto-acoustic response along those waveguides to monitor their uniformity and maximize their interaction strength. In this work, we design and fabricate photonic-phononic wave…
The spectra of silicon integrated waveguides are tailored to process analog computing (i.e.,differential and integral) in optical domain with huge bandwidth.With the theory of signal and system, we design some silicon integrated devices to implement photonic differentiator and optical differential equation solver. The basic principle is to tailor the spectra of silicon integrated waveguides to meet the requirements of analog computing circuits. These analog photonic integrated circuits are very promising in future computing systems with high speed, low cost, and compact size. We also plan to e…
We investigate a short (~1.5μm) partially-corrugated tapered waveguide structure for mode coupling from a silicon micro-slab to a plasmonic nano-gap waveguide at the optical communication frequency. More than 80% transmission efficiency is reported numerically for the first time. The result indicates that the corrugated waveguide structure should not only be helpful for realizing full on-chip silicon plasmonic devices but also a good choice for mode coupling enhancement from dielectric waveguides to plasmonic waveguides. Meanwhile, we point out that the coupling mechanism reported here is diff…
We experimentally show octave-spanning supercontinuum generation in a non-stoichiometric silicon-rich nitride waveguide when pumped by femtosecond pulses from an erbium fiber laser. The pulse energy and bandwidth are comparable to results achieved in stoichiometric silicon nitride waveguides, but our material platform is simpler to manufacture. We also observe wave-breaking supercontinuum generation by using orthogonal pumping in the same waveguide. Additional analysis reveals that the waveguide height is a powerful tuning parameter for generating mid-infrared dispersive waves while keeping th…
Silicon is an ideal material for on-chip applications, however its poor acoustic properties limit its performance for important optoacoustic applications, particularly for Stimulated Brillouin Scattering (SBS). We theoretically show that silicon inverse opals exhibit a strongly improved acoustic performance that enhances the bulk SBS gain coefficient by more than two orders of magnitude. We also design a waveguide that incorporates silicon inverse opals and which has SBS gain values that are comparable with chalcogenide glass waveguides. This research opens new directions for opto-acoustic app…
We demonstrate correlated photon pair generation via spontaneous four-wave mixing in a low-loss double-stripe silicon nitride waveguide with a coincidence-to-accidental ratio over 10. The coincidence-to-accidental ratio is limited by spontaneous Raman scattering, which can be mitigated by cooling in the future. This demonstration suggests that this waveguide structure is a potential platform to develop integrated quantum photonic chips for quantum information processing.
It has recently been shown that silicon nanophotonic waveguides can be used to construct all of the components of a photonic data transmission system on a single chip. These components can be integrated together with CMOS electronics to create complex electronic-photonic integrated circuits. It has also emerged that the high field confinement of silicon nanoscale guides enables exciting new applications, from chipscale nonlinear optics to biosensors and light-force activated devices. To date, most of the experiments in silicon waveguides have been at wavelengths in the near-infrared, ranging f…
Stimulated emission of sensitized Erbium atoms is reported in silicon-rich silicon nitride waveguides. Visible pump and infrared probe measurements are carried out in waveguides fabricated from erbium-doped silicon rich silicon nitride. A decrease in the photoinduced absorption of the probe in the wavelength range of the erbium emission is observed and is attributed to stimulated emission from erbium atoms excited indirectly via the silicon excess in an SiNx matrix. A near 50% decrease in absorption is measured, corresponding to an 8% fraction of inverted erbium atoms. This fraction is an orde…
A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (SiGe) within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.
We present the design and anticipated performance of an optically pumped monolithic all-silicon mid-IR (MIR) Raman laser. For the proposed 3.15 um cw laser design pumped at a 2.71 um pump wavelength, we estimate a threshold pump power of < 10 mW and an estimated output laser linewidth of <50 MHz. This design may pave the road toward demonstration of the first mid-IR silicon Raman laser.
While nanoscale modal confinement radically enhances a variety of nonlinear light-matter interactions within silicon waveguides, traveling-wave stimulated Brillouin scattering nonlinearities have never been observed in silicon nanophotonics. Through a new class of hybrid photonic-phononic waveguides, we demonstrate tailorable traveling-wave forward stimulated Brillouin scattering in nanophotonic silicon waveguides for the first time, yielding 3000 times stronger forward SBS responses than any previous waveguide system. Simulations reveal that a coherent combination of electrostrictive forces a…
We investigate the feasibility of CMOS-compatible optical structures to develop novel integrated spectroscopy systems. We show that local field enhancement is achievable utilizing dimers of plasmonic nanospheres that can be assembled from colloidal solutions on top of a CMOS-compatible optical waveguide. The resonant dimer nanoantennas are excited by modes guided in the integrated silicon nitride waveguide. Simulations show that 100 fold electric field enhancement builds up in the dimer gap as compared to the waveguide evanescent field amplitude at the same location. We investigate how the fie…
An effort was conducted to numerically determine, using the Nonlinear Schrodinger Split-Step Fourier method, if using cross phase modulation could cause temporal soliton pulse propagation in a silicon slow-light photonic crystal waveguide shorter than a millimeter. The simulations demonstrated that due to the higher powers and shorter scales of photonic crystals, two-photon absorption would cause an optical soliton pulse to be extremely dissipative. The model demonstrated, however, that by utilizing cross-phase modulation, it is possible to sustain a compressed soliton pulse within a silicon p…
The demand for nonlinear effects within a silicon platform to support photonic circuits requiring phase-only modulation, frequency doubling, and/or difference frequency generation, is becoming increasingly clear. However, the symmetry of the silicon crystal inhibits second order optical nonlinear susceptibility, $χ^{(2)}$. Here, we show that the crystalline symmetry is broken when a DC field is present, inducing a $χ^{(2)}$ in a silicon waveguide that is proportional to the large $χ^{(3)}$ of silicon. First, Mach-Zehnder interferometers using the DC Kerr effect optical phase shifters in silico…
We for the first time provide an analytic solution for pulse propagation and phase sensitive amplification in the regime of high nonlinearity in silicon waveguides including two-photon absorption (TPA) and free carriers. Our analytic results clearly explain why and how the TPA and free carriers affect the signal gain. These observation are confirmed with numerical modelling and experimental results.
We experimentally demonstrate phase sensitive amplification (PSA) in a silicon photonic crystal waveguide based on pump-degenerate four-wave mixing. An 11 dB phase extinction ratio is obtained in a record compact 196 μm nanophotonic device due to broadband slow-light, in spite of the presence of two-photon absorption and free-carriers. Numerical calculations show good agreement with the experimental results.
Strong acousto-optic interaction in silicon-based waveguides generally requires releasing of the silicon core to avoid mechanical leakage into the underlying silica substrate. This complicates fabrication, limits thermalization, reduces the mechanical robustness and hinders large area optomechanical devices on a single chip. Here, we overcome this limitation by employing vertical photonic-phononic engineering. Specifically, the insertion of a thick silicon nitride layer between the silicon guiding core and the silica substrate contributes to reduce GHz-frequencies phonon leakage enabling large…
We present experimental results on the observation of a bulk second-order nonlinear susceptibility derived from both free-space and integrated measurements in silicon nitride. Phase-matching is achieved through dispersion engineering of the waveguide cross-section, independently revealing multiple components of the nonlinear susceptibility, namely X(2)yyy and X(2)xxy. Additionally, we show how the generated second-harmonic signal may be actively tuned through the application of bias voltages across silicon nitride. The nonlinear material properties measured here are anticipated to allow for th…
We demonstrate the first low-noise mid-IR frequency comb source using a silicon microresonator. Our observation of strong Raman scattering lines in the generated comb suggests that Raman and four-wave mixing interactions play a role in assisting the transition to the low-noise state. In addition, we characterize, the intracavity comb generation dynamics using an integrated PIN diode, which takes advantage of the inherent three-photon absorption process in silicon.
In this paper we report suspended silicon waveguides operating at a wavelength of 7.67 mm with a propagation loss of 3.1 ? 0.3 dB/cm. To our knowledge this is the first demonstration of low loss silicon waveguides at such a long wavelength, with loss comparable to other platforms that use more exotic materials. The suspended Si waveguide core is supported by a subwavelength grating that provides lateral optical confinement, while also allowing access to the buried oxide layer so that it can be wet etched using hydrofluoric acid. We also demonstrate low loss waveguide bends and s-bends.
In this paper the experimental demonstration of a Silicon-on-Insulator Reflective Arrayed Waveguide Grating (R-AWG) is reported. The device employs one Sagnac loop mirror per arm in the array, built with a 1x2 input/outputs, 50:50 splitting ratio, Multimode Interference coupler, for total reflection. The spectral responses obtained are compared to those of regular AWGs fabricated in the same die.
We theoretically investigate the free-carrier induced spatio-temporal dynamics of continuous waves in silicon waveguides embedded in an amplifying medium. Optical propagation is governed by a cubic Ginzburg-Landau equation coupled with an ordinary differential equation accounting for the free-carrier dynamics. We find that, owing to free-carrier dispersion, countinuous waves are modulationally unstable in both anomalous and normal dispersion regimes and chaotically generate unstable accelerating pulses.
Nonlinear periodically poled ridge LiNbO3 waveguides have been fabricated on silicon substrates. Components are carved with only use of a precision dicing machine without need for grinding or polishing steps. They show efficient second harmonic generation at telecommunication wavelengths with normalized conversion reaching 204%/W in a 15 mm long device. Influence of geometrical non uniformities of waveguides due to fabrication process is asserted. Components characteristics are studied notably their robustness and tunability versus temperature.
We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1} \textrm{m}^{-1}$, nonlinear absorption 28~$\textrm{W}^{-1} \textrm{m}^{-1}$, bandgap $1.61$~eV.
Stimulated Raman scattering is a well-known nonlinear process that can be harnessed to produce optical gain in a wide variety of media. This effect has been used to produce the first silicon-based lasers and high-gain amplifiers. Interestingly, the Raman effect can also produce intensity-dependent nonlinear loss through a corollary process known as inverse Raman scattering (IRS). Here, we demonstrate IRS in silicon--a process that is substantially modified by the presence of optically-generated free carriers--achieving attenuation levels >15 dB with a pump intensity of 4 GW/cm^2. Ironically, w…
Plasmonic antennas integrated on silicon devices have large and yet unexplored potential for controlling and routing light signals. Here, we present theoretical calculations of a hybrid silicon-metallic system in which a single gold nanoantenna embedded in a single-mode silicon waveguide acts as a resonance-driven filter. As a consequence of scattering and interference, when the resonance condition of the antenna is met, the transmission drops by 85% in the resonant frequency band. Firstly, we study analytically the interaction between the propagating mode and the antenna by including radiativ…
We demonstrate a silicon nitride trench waveguide deposited with bowtie antennas for plasmonic enhanced optical trapping. The sub-micron silicon nitride trench waveguides were fabricated with conventional optical lithography in a low cost manner. The waveguides embrace not only low propagation loss and high nonlinearity, but also the inborn merits of combining micro-fluidic channel and waveguide together. Analyte contained in the trapezoidal trench channel can interact with the evanescent field from the waveguide beneath. The evanescent field can be further enhanced by plasmonic nanostructures…
We experimentally show that the self-phase modulation of picosecond pump pulses, induced by both the optical Kerr effect and free-carrier refraction, has a detrimental effect on the maximum on-off Raman gain achievable in silicon on insulator nanowaveguides, causing it to saturate. A simple calculation of the Raman gain coefficient from the measured broadened output pump spectra perfectly matches the saturated behavior of the amplified Raman signal observed experimentally at different input pump powers.
Four-wave mixing is observed in a silicon W1 photonic crystal waveguide. The dispersion dependence of the idler conversion efficiency is measured and shown to be enhanced at wavelengths exhibiting slow group velocities. A 12-dB increase in the conversion efficiency is observed. Concurrently, a decrease in the conversion bandwidth is observed due to the increase in group velocity dispersion in the slow-light regime. The experimentally observed conversion efficiencies agree with the numerically modeled results.
We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS-compatible processes. It…
Anomalous optical coupling properties between two silicon wires in a silicon slot waveguide embedded in epsilon-near-zero (ENZ) metamaterials are proposed and demonstrated. The dependences of optical field enhancement in the slot region and transverse optical force on the slot size and the permittivity of surrounding material are studied in details. It is demonstrated that the optical field in the slot region is significantly enhanced due to the giant index contrast at the slot interface between silicon wires and ENZ metamaterials, but the optical mode coupling between silicon wires is greatly…
We propose a polarization-insensitive and high-efficiency plasmonic silicon Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission. Our photodiode is based on a hybrid plasmonic silicon waveguide. It has a gold film covering both the top and the sidewalls of a dielectric silicon waveguide with the Schottky contact formed at the gold-silicon interface. An extensive physical model is presented in detail and applied to calculate and analyze the performance of our detector. By comparison with a diode with only top contact of…
Experimental Measurement of Enhanced Group Delay Silicon Photonic Waveguides Indicative of the Frozen Mode Regime Around the Stationary Inflection Point
Evanescent and tightly confined propagating waves exhibit a remarkable transverse spin density since the longitudinal component of the electric field is not negligible. In this work, we obtain via numerical simulations the electric field components of the fundamental guided modes of two waveguides typically used in silicon photonics: the strip and the slot waveguide. We obtain the relation between transverse and longitudinal field components, the transverse spin densities and other important parameters, such as the longitudinal component of the so-called Belinfante spin momentum density. By as…
Flexible control of the modal confinement in silicon photonic waveguides is an appealing feature for many applications, including sensing and hybrid integration of active materials. In most cases, strip waveguides are the preferred solution to maximize the light interaction with the waveguide surroundings. However, the only two degrees of freedom in Si strip waveguides are the width and thickness, resulting in limited flexibility in evanescent field control. Here, we propose and demonstrate a new strategy that exploits metamaterial engineering of the waveguide core and cladding to control the …
Enhancement of optical response with high-index dielectric nanoparticles is attributed to the excitation of their Mie-type magnetic and electric resonances. Here we study Raman scattering from crystalline silicon nanoparticles and reveal that magnetic dipole modes have much stronger effect on the scattering than electric modes of the same order. We demonstrate experimentally a 140-fold enhancement of Raman signal from individual silicon spherical nanoparticles at the magnetic dipole resonance. Our results confirm the importance of the optically-induced magnetic response of subwavelength dielec…
To fully utilize graphene's remarkable optical properties for optoelectronic applications, it needs to be integrated in planar photonic systems. Here, we demonstrate integration of graphene on silicon photonic circuits and precise measurement of the optical absorption coefficient in a graphene/waveguide hybrid structure. A method based on Mach-Zehnder interferometry is employed to achieve high measurement precision and consistency, yielding a maximal value of absorption coefficient of 0.2 dB/μm when graphene is located directly on top of the waveguide. The results agree with theoretical model …
Tapered and dispersion managed (DM) silicon nanophotonic waveguides are investigated for the generation of optimal ultra broadband supercontinuum (SC). DM waveguides are structures showing a longitudinally dependent group velocity dispersion that results from the variation of the waveguide width with the propagation distance. For the generation of optimal SC, a genetic algorithm has been used to find the best dispersion map. This allows for the generation of highly coherent supercontinuums that span over 1.14 octaves from 1300 nm to 2860 nm and 1.25 octaves from 1200 nm to 2870 nm at -20 dB le…
We propose a practical and efficient solution for the coupling of light from integrated single-mode waveguides to supercollimating planar photonic crystals on conventional silicon-on-insulator platforms. The device consists of a rib waveguide, designed to sustain spatially extended single-modes and matched to a supercollimating photonic crystal, which has been truncated at its boundary to improve impedance matching between the two photonic components. Three-dimensional simulations show transmission efficiencies up to 96 % and reflections below 0.2 % at wavelengths close to 1.55 microns. This a…
We demonstrate an octave-spanning frequency comb with a spectrum covering wavelengths from 1,540 nm up to 3,200 nm. The supercontinuum is generated by pumping a 1-cm long dispersion engineered silicon wire waveguide by 70 fs pulses with an energy of merely 15 pJ. We confirm the phase coherence of the output spectrum by beating the supercontinuum with narrow bandwidth CW lasers. We show that the experimental results are in agreement with numerical simulations.
In this work we present a detailed analysis of individual loss mechanisms in silicon nitride partial Euler bends at a wavelength of 850 nm. This structure optimizes the transmission through small radii optical waveguide bends. The partial Euler bend geometry balances losses arising from the transition from the straight to the bend waveguide mode, and radiative losses of the bend waveguide mode. Numerical analyses are presented for 45-degree bends commonly employed in S-bend configurations to create lateral offsets, as well as 90- and 180-degree bends. Additionally, 90-degree partial Euler bend…
