Suspended silicon waveguides for long-wave infrared wavelengths
J. Soler Penadés, A. Sánchez-Postigo, M. Nedeljkovic, A. Ortega-Moñux, J. G. Wangüemert-Pérez, Y. Xu, R. Halir, Z. Qu, A. Z. Khokhar, A. Osman, W. Cao, C. G. Li… 展开作者
J. Soler Penadés, A. Sánchez-Postigo, M. Nedeljkovic, A. Ortega-Moñux, J. G. Wangüemert-Pérez, Y. Xu, R. Halir, Z. Qu, A. Z. Khokhar, A. Osman, W. Cao, C. G. Littlejohns, P. Cheben, I. Molina-Fernández, G. Z. Mashanovich
In this paper we report suspended silicon waveguides operating at a wavelength of 7.67 mm with a propagation loss of 3.1 ? 0.3 dB/cm. To our knowledge this is the first demonstration of low loss silicon waveguides at such a long wavelength, with loss comparable to other platforms that use more exotic materials. The suspended Si waveguide core is supported by a subwavelength grating that provides lateral optical confinement, while also allowing access to the buried oxide layer so that it can be wet etched using hydrofluoric acid. We also demonstrate low loss waveguide bends and s-bends.
We report here a monolithic photonic integration of light emitting diode (LED) with waveguide and photodetector to build a highly-integrated photonic system to perform functionalities on the GaN-on-silicon platform. Suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) are used for device fabrication. Part of the LED emission is coupled into suspended waveguide and then, the guided light laterally propagates along the waveguide and is finally sensed by the photodetector. Planar optical communication experimentally demonstrates that the proof-of-concept monolithic photonic integration …
We observe a strong polarization dependent optical loss of in-plane light propagation in silicon waveguide due to the presence of graphene. Both transverse-electric (TE) and transverse-magnetic (TM) modes are efficiently (~3 dB) coupled to the graphene on suspended membrane waveguides using an apodized focusing subwavelength grating. The TE mode has 7.7 dB less excess optical loss than the TM mode at 1.5 μm for a 150 μm long waveguide in good agreement with a theoretical model. All-optical modulation of light is demonstrated. There is also a large thermally induced change in waveguide effectiv…
We report on the first demonstration of a fully suspended 10m Fabry-Perot cavity incorporating a waveguide grating as the coupling mirror. The cavity was kept on resonance by reading out the length fluctuations via the Pound-Drever-Hall method and employing feedback to the laser frequency. From the achieved finesse of 790 the grating reflectivity was determined to exceed 99.2% at the laser wavelength of 1064\,nm, which is in good agreement with rigorous simulations. Our waveguide grating design was based on tantala and fused silica and included a ~20nm thin etch stop layer made of Al2O3 that a…
Photonic waveguides with triangular cross section are being investigated for material systems such as diamond, glasses and gallium nitride, which lack easy options to create conventional rectangular nanophotonic waveguides. The design rules for optical elements in these triangular waveguides, such as couplers and gratings, are not well established. Here we present simulations of elements designed to couple light into, and out of, triangular waveguides from the vertical direction, which can be implemented with current angled-etch fabrication technology. The devices demonstrate coupling efficien…
It is shown that optomechanical forces can cause nonlinear self-channelling of light in a planar dual-slab waveguide. A system of two parallel silica nanowebs, spaced ~100 nm and supported inside a fibre capillary, is studied theoretically and an iterative scheme developed to analyse its nonlinear optomechanical properties. Steady-state field distributions and mechanical deformation profiles are obtained, demonstrating that self-channelling is possible in realistic structures at launched powers as low as a few mW. The differential optical nonlinearity of the self-channelled mode can be as much…
The large transparency window of silicon, covering the 1.1 um 8 um wavelength range, makes it a promising platform for the implementation of photothermal-based absorption spectrometers. These devices indirectly sense absorption in the mid-infrared (MIR) by using near-infrared (NIR) wavelengths, thereby enabling the realization of MIR absorption spectrometers without the need for MIR photodetectors. Nevertheless, due to their comparatively large index contrast and cross-sections, MIR Si strip waveguides are multi-mode at NIR wavelengths, hindering device implementation. Here we present, for the…
We report on an integrated GaAs disk/waveguide system. A millimeter-long waveguide is suspended and tapered on the chip over a length of 25 μm to evanescently couple to high Q optical whispering gallery modes of a GaAs disk. The critical coupling regime is obtained both by varying the disk/guide gap distance and the width of the suspended nanoscale taper. The experimental results are in good agreement with predictions from the coupled mode theory.
We theoretically investigate a new class of silicon waveguides for achieving Stimulated Brillouin Scattering (SBS) in the mid-infrared (MIR). The waveguide consists of a rectangular core supporting a low-loss optical mode, suspended in air by a series of transverse ribs. The ribs are patterned to form a finite quasi-one-dimensional phononic crystal, with the complete stopband suppressing the transverse leakage of acoustic waves, and confining them to the core of the waveguide. We derive a theoretical formalism that can be used to compute the opto-acoustic interaction in such periodic structure…
Silicon carbide (SiC) displays a unique combination of optical and spin-related properties that make it interesting for photonics and quantum technologies. However, guiding light by total internal reflection can be difficult to achieve, especially when SiC is grown as thin films on higher index substrates, like Silicon. Fabricating suspended, subwavelength waveguides requires a single lithography step and offers a solution to the confinement problem, while preserving the design flexibility required for a scalable and complete photonic platform. Here we present a design for such platform, that …
We propose a scheme to realize controlled phase gate between two single photons through a single quantum dot in slow-light silicon photonic crystal waveguide. Enhanced Purcell factor and beta factor lead to high gate fidelity over broadband frequencies compared to cavity-assisted system. The excellent physical integration of this silicon photonic crystal waveguide system provides tremendous potential for large-scale quantum information processing.
The third-order optical nonlinearity in optical waveguides has found applications in optical switching, optical wavelength conversion, optical frequency comb generation, and ultrafast optical signal processing. The development of an integrated waveguide platform with a high nonlinearity is therefore important for nonlinear integrated photonics. Here, we report the observation of an enhancement in the nonlinearity of an air-cladding silicon pedestal waveguide. We observe enhanced nonlinear spectral broadening compared to a conventional silicon-on-insulator waveguide. At the center wavelength of…
We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dioxide, silicon nitride, or aluminum oxide, and by measuring the electro-optic behavior of ring resonators, we characterize the cladding-dependent and capacitively-induced free-carrier effects in each of these waveguides. By comparing our measured data with simulation results, we confirm that the observed voltage dependencies of the transmission spectra are due to changes in the concentrations of holes and electrons within the semiconductor waveguide, and we show for the first time how strongly these…
We propose the use of silicon graphene waveguides to implement a tunable broadband microwave photonics phase shifte based on integrated ring cavities. Numerical computation results show the feasibility for broadband operation over 40 GHz bandwidth and full 360 degree radiofrequency phase-shift with a modest voltage excursion of 0.12 volt.
Suspended graphene waveguides were deposited on micron-scale periodic metal (plasmonic) structures. Raman scattering of test molecules (B. Megaterium), deposited on the waveguides' surface, exhibited azimuthal cycles upon rotation: at these micron scales, spontaneous Raman ought to be independent of phase matching conditions. In addition, we observed angular-selective quadratic intensity dependence contrary to the typical linear behavior of spontaneous Raman. The effects were observed at very modest pump laser intensities (<10 MW/cm2 at the sample surface, oftenly used in Raman experiments). W…
We report the observations of spontaneous Raman scattering in silicon photonic crystal waveguides. Continuous-wave measurements of Stokes emission for both wavelength and power dependence is reported in single line-defect waveguides in hexagonal lattice photonic crystal silicon membranes. By utilizing the Bragg gap edge dispersion of the TM-like mode for pump enhancement and the TE-like fundamental mode-onset for Stokes enhancement, the Stokes emission was observed to increase by up to five times in the region of slow group velocity. The results show explicit nonlinear enhancement in a silicon…
We theoretically characterize the free-carrier plasma dispersion effect in fully-etched silicon waveguides, with various dielectric material claddings, due to fixed and interface charges at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage (C-V) characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain (FDTD) method s…
We demonstrate low loss ridge waveguides and the first ring resonators for the mid-infrared, for wavelengths ranging from 5.4 to 5.6 μm. Structures were fabricated using electron-beam lithography on the silicon-on-sapphire material system. Waveguide losses of 4.0 +/- 0.7 dB/cm are achieved, as well as Q-values of 3.0 k.
We present a new approach to long range coupling based on a combination of adiabatic passage and lateral leakage in thin shallow ridge waveguides on a silicon photonic platform. The approach enables transport of light between two isolated waveguides through a mode of the silicon slab that acts as an optical bus. Due to the nature of the adiabatic protocol, the bus mode has minimal population and the transport is highly robust. We prove the concept and examine the robustness of this approach using rigorous modelling. We further demonstrate the utility of the approach by coupling power between t…
Recent advances in design and fabrication of photonic-phononic waveguides have enabled stimulated Brillouin scattering (SBS) in silicon-based platforms, such as under-etched silicon waveguides and hybrid waveguides. Due to the sophisticated design and more importantly high sensitivity of the Brillouin resonances to geometrical variations in micro- and nano-scale structures, it is necessary to have access to the localized opto-acoustic response along those waveguides to monitor their uniformity and maximize their interaction strength. In this work, we design and fabricate photonic-phononic wave…
The spectra of silicon integrated waveguides are tailored to process analog computing (i.e.,differential and integral) in optical domain with huge bandwidth.With the theory of signal and system, we design some silicon integrated devices to implement photonic differentiator and optical differential equation solver. The basic principle is to tailor the spectra of silicon integrated waveguides to meet the requirements of analog computing circuits. These analog photonic integrated circuits are very promising in future computing systems with high speed, low cost, and compact size. We also plan to e…
We investigate a short (~1.5μm) partially-corrugated tapered waveguide structure for mode coupling from a silicon micro-slab to a plasmonic nano-gap waveguide at the optical communication frequency. More than 80% transmission efficiency is reported numerically for the first time. The result indicates that the corrugated waveguide structure should not only be helpful for realizing full on-chip silicon plasmonic devices but also a good choice for mode coupling enhancement from dielectric waveguides to plasmonic waveguides. Meanwhile, we point out that the coupling mechanism reported here is diff…
We experimentally show octave-spanning supercontinuum generation in a non-stoichiometric silicon-rich nitride waveguide when pumped by femtosecond pulses from an erbium fiber laser. The pulse energy and bandwidth are comparable to results achieved in stoichiometric silicon nitride waveguides, but our material platform is simpler to manufacture. We also observe wave-breaking supercontinuum generation by using orthogonal pumping in the same waveguide. Additional analysis reveals that the waveguide height is a powerful tuning parameter for generating mid-infrared dispersive waves while keeping th…
Silicon is an ideal material for on-chip applications, however its poor acoustic properties limit its performance for important optoacoustic applications, particularly for Stimulated Brillouin Scattering (SBS). We theoretically show that silicon inverse opals exhibit a strongly improved acoustic performance that enhances the bulk SBS gain coefficient by more than two orders of magnitude. We also design a waveguide that incorporates silicon inverse opals and which has SBS gain values that are comparable with chalcogenide glass waveguides. This research opens new directions for opto-acoustic app…
We demonstrate correlated photon pair generation via spontaneous four-wave mixing in a low-loss double-stripe silicon nitride waveguide with a coincidence-to-accidental ratio over 10. The coincidence-to-accidental ratio is limited by spontaneous Raman scattering, which can be mitigated by cooling in the future. This demonstration suggests that this waveguide structure is a potential platform to develop integrated quantum photonic chips for quantum information processing.
It has recently been shown that silicon nanophotonic waveguides can be used to construct all of the components of a photonic data transmission system on a single chip. These components can be integrated together with CMOS electronics to create complex electronic-photonic integrated circuits. It has also emerged that the high field confinement of silicon nanoscale guides enables exciting new applications, from chipscale nonlinear optics to biosensors and light-force activated devices. To date, most of the experiments in silicon waveguides have been at wavelengths in the near-infrared, ranging f…
Stimulated emission of sensitized Erbium atoms is reported in silicon-rich silicon nitride waveguides. Visible pump and infrared probe measurements are carried out in waveguides fabricated from erbium-doped silicon rich silicon nitride. A decrease in the photoinduced absorption of the probe in the wavelength range of the erbium emission is observed and is attributed to stimulated emission from erbium atoms excited indirectly via the silicon excess in an SiNx matrix. A near 50% decrease in absorption is measured, corresponding to an 8% fraction of inverted erbium atoms. This fraction is an orde…
A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (SiGe) within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.
While nanoscale modal confinement radically enhances a variety of nonlinear light-matter interactions within silicon waveguides, traveling-wave stimulated Brillouin scattering nonlinearities have never been observed in silicon nanophotonics. Through a new class of hybrid photonic-phononic waveguides, we demonstrate tailorable traveling-wave forward stimulated Brillouin scattering in nanophotonic silicon waveguides for the first time, yielding 3000 times stronger forward SBS responses than any previous waveguide system. Simulations reveal that a coherent combination of electrostrictive forces a…
We investigate the feasibility of CMOS-compatible optical structures to develop novel integrated spectroscopy systems. We show that local field enhancement is achievable utilizing dimers of plasmonic nanospheres that can be assembled from colloidal solutions on top of a CMOS-compatible optical waveguide. The resonant dimer nanoantennas are excited by modes guided in the integrated silicon nitride waveguide. Simulations show that 100 fold electric field enhancement builds up in the dimer gap as compared to the waveguide evanescent field amplitude at the same location. We investigate how the fie…
An effort was conducted to numerically determine, using the Nonlinear Schrodinger Split-Step Fourier method, if using cross phase modulation could cause temporal soliton pulse propagation in a silicon slow-light photonic crystal waveguide shorter than a millimeter. The simulations demonstrated that due to the higher powers and shorter scales of photonic crystals, two-photon absorption would cause an optical soliton pulse to be extremely dissipative. The model demonstrated, however, that by utilizing cross-phase modulation, it is possible to sustain a compressed soliton pulse within a silicon p…
The demand for nonlinear effects within a silicon platform to support photonic circuits requiring phase-only modulation, frequency doubling, and/or difference frequency generation, is becoming increasingly clear. However, the symmetry of the silicon crystal inhibits second order optical nonlinear susceptibility, $χ^{(2)}$. Here, we show that the crystalline symmetry is broken when a DC field is present, inducing a $χ^{(2)}$ in a silicon waveguide that is proportional to the large $χ^{(3)}$ of silicon. First, Mach-Zehnder interferometers using the DC Kerr effect optical phase shifters in silico…
We for the first time provide an analytic solution for pulse propagation and phase sensitive amplification in the regime of high nonlinearity in silicon waveguides including two-photon absorption (TPA) and free carriers. Our analytic results clearly explain why and how the TPA and free carriers affect the signal gain. These observation are confirmed with numerical modelling and experimental results.
We experimentally demonstrate phase sensitive amplification (PSA) in a silicon photonic crystal waveguide based on pump-degenerate four-wave mixing. An 11 dB phase extinction ratio is obtained in a record compact 196 μm nanophotonic device due to broadband slow-light, in spite of the presence of two-photon absorption and free-carriers. Numerical calculations show good agreement with the experimental results.
Strong acousto-optic interaction in silicon-based waveguides generally requires releasing of the silicon core to avoid mechanical leakage into the underlying silica substrate. This complicates fabrication, limits thermalization, reduces the mechanical robustness and hinders large area optomechanical devices on a single chip. Here, we overcome this limitation by employing vertical photonic-phononic engineering. Specifically, the insertion of a thick silicon nitride layer between the silicon guiding core and the silica substrate contributes to reduce GHz-frequencies phonon leakage enabling large…
We present experimental results on the observation of a bulk second-order nonlinear susceptibility derived from both free-space and integrated measurements in silicon nitride. Phase-matching is achieved through dispersion engineering of the waveguide cross-section, independently revealing multiple components of the nonlinear susceptibility, namely X(2)yyy and X(2)xxy. Additionally, we show how the generated second-harmonic signal may be actively tuned through the application of bias voltages across silicon nitride. The nonlinear material properties measured here are anticipated to allow for th…
In this paper the experimental demonstration of a Silicon-on-Insulator Reflective Arrayed Waveguide Grating (R-AWG) is reported. The device employs one Sagnac loop mirror per arm in the array, built with a 1x2 input/outputs, 50:50 splitting ratio, Multimode Interference coupler, for total reflection. The spectral responses obtained are compared to those of regular AWGs fabricated in the same die.
We theoretically investigate the free-carrier induced spatio-temporal dynamics of continuous waves in silicon waveguides embedded in an amplifying medium. Optical propagation is governed by a cubic Ginzburg-Landau equation coupled with an ordinary differential equation accounting for the free-carrier dynamics. We find that, owing to free-carrier dispersion, countinuous waves are modulationally unstable in both anomalous and normal dispersion regimes and chaotically generate unstable accelerating pulses.
Nonlinear periodically poled ridge LiNbO3 waveguides have been fabricated on silicon substrates. Components are carved with only use of a precision dicing machine without need for grinding or polishing steps. They show efficient second harmonic generation at telecommunication wavelengths with normalized conversion reaching 204%/W in a 15 mm long device. Influence of geometrical non uniformities of waveguides due to fabrication process is asserted. Components characteristics are studied notably their robustness and tunability versus temperature.
We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1} \textrm{m}^{-1}$, nonlinear absorption 28~$\textrm{W}^{-1} \textrm{m}^{-1}$, bandgap $1.61$~eV.
Plasmonic antennas integrated on silicon devices have large and yet unexplored potential for controlling and routing light signals. Here, we present theoretical calculations of a hybrid silicon-metallic system in which a single gold nanoantenna embedded in a single-mode silicon waveguide acts as a resonance-driven filter. As a consequence of scattering and interference, when the resonance condition of the antenna is met, the transmission drops by 85% in the resonant frequency band. Firstly, we study analytically the interaction between the propagating mode and the antenna by including radiativ…
We demonstrate a silicon nitride trench waveguide deposited with bowtie antennas for plasmonic enhanced optical trapping. The sub-micron silicon nitride trench waveguides were fabricated with conventional optical lithography in a low cost manner. The waveguides embrace not only low propagation loss and high nonlinearity, but also the inborn merits of combining micro-fluidic channel and waveguide together. Analyte contained in the trapezoidal trench channel can interact with the evanescent field from the waveguide beneath. The evanescent field can be further enhanced by plasmonic nanostructures…
Four-wave mixing is observed in a silicon W1 photonic crystal waveguide. The dispersion dependence of the idler conversion efficiency is measured and shown to be enhanced at wavelengths exhibiting slow group velocities. A 12-dB increase in the conversion efficiency is observed. Concurrently, a decrease in the conversion bandwidth is observed due to the increase in group velocity dispersion in the slow-light regime. The experimentally observed conversion efficiencies agree with the numerically modeled results.
The century-old study of photon-phonon coupling has seen a remarkable revival in the past decade. Driven by early observations of dynamical back-action, the field progressed to ground-state cooling and the counting of individual phonons. A recent branch investigates the potential of traveling-wave, optically broadband photon-phonon interaction in silicon circuits. Here, we report continuous-wave Brillouin gain exceeding the optical losses in a series of suspended silicon beams, a step towards selective on-chip amplifiers. We obtain efficiencies up to $10^{4} \, \text{W}^{-1}\text{m}^{-1}$, the…
We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS-compatible processes. It…
We propose a feasible waveguide design optimized for harnessing Stimulated Brillouin Scattering with long-lived phonons. The design consists of a fully suspended ridge waveguide surrounded by a 1D phononic crystal that mitigates losses to the substrate while providing the needed homogeneity for the build-up of the optomechanical interaction. The coupling factor of these structures was calculated to be 0.54 (W.m)$^{-1}$ for intramodal backward Brillouin scattering with its fundamental TE-like mode and 4.5(W.m)$^{-1}$ for intramodal forward Brillouin scattering. The addition of the phononic crys…
This paper presents the design, fabrication, and experimental characterization of monolithically integrated p-n junction InGaN/GaN multiple quantum well diodes (MQWDs) and suspended waveguides. Suspended MQWDs can be used as transmitters and receivers simultaneously, and suspended waveguides are used for light coupling to create an in-plane visible light communication system. Compared to the waveguide with separation trench, the calculated total light efficiency is increased from 18% to 22% for the continuous waveguide. The MQWDs are characterized by their typical current-voltage performance, …
Anomalous optical coupling properties between two silicon wires in a silicon slot waveguide embedded in epsilon-near-zero (ENZ) metamaterials are proposed and demonstrated. The dependences of optical field enhancement in the slot region and transverse optical force on the slot size and the permittivity of surrounding material are studied in details. It is demonstrated that the optical field in the slot region is significantly enhanced due to the giant index contrast at the slot interface between silicon wires and ENZ metamaterials, but the optical mode coupling between silicon wires is greatly…
We propose a polarization-insensitive and high-efficiency plasmonic silicon Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission. Our photodiode is based on a hybrid plasmonic silicon waveguide. It has a gold film covering both the top and the sidewalls of a dielectric silicon waveguide with the Schottky contact formed at the gold-silicon interface. An extensive physical model is presented in detail and applied to calculate and analyze the performance of our detector. By comparison with a diode with only top contact of…
Experimental Measurement of Enhanced Group Delay Silicon Photonic Waveguides Indicative of the Frozen Mode Regime Around the Stationary Inflection Point
Evanescent and tightly confined propagating waves exhibit a remarkable transverse spin density since the longitudinal component of the electric field is not negligible. In this work, we obtain via numerical simulations the electric field components of the fundamental guided modes of two waveguides typically used in silicon photonics: the strip and the slot waveguide. We obtain the relation between transverse and longitudinal field components, the transverse spin densities and other important parameters, such as the longitudinal component of the so-called Belinfante spin momentum density. By as…
Flexible control of the modal confinement in silicon photonic waveguides is an appealing feature for many applications, including sensing and hybrid integration of active materials. In most cases, strip waveguides are the preferred solution to maximize the light interaction with the waveguide surroundings. However, the only two degrees of freedom in Si strip waveguides are the width and thickness, resulting in limited flexibility in evanescent field control. Here, we propose and demonstrate a new strategy that exploits metamaterial engineering of the waveguide core and cladding to control the …
