Stimulated emission of sensitized Erbium atoms is reported in silicon-rich silicon nitride waveguides. Visible pump and infrared probe measurements are carried out in waveguides fabricated from erbium-doped silicon rich silicon nitride. A decrease in the photoinduced absorption of the probe in the wavelength range of the erbium emission is observed and is attributed to stimulated emission from erbium atoms excited indirectly via the silicon excess in an SiNx matrix. A near 50% decrease in absorption is measured, corresponding to an 8% fraction of inverted erbium atoms. This fraction is an order of magnitude higher than that obtained in counterpart oxide systems possessing observable nanocrystals. Our results indicate that population inversion and gain at 1.54 um might be possible by optimizing the silicon excess in the SiNx matrix.
Plasmonic gratings and nano-particle arrays in a metal-insulator-metal structures are fabricated on an erbium doped silicon nitride layer. This material system enables simple fabrication of the structure, since the active nitride layer can be directly grown on metal. Enhancement of collected emission of up to 12 is observed on resonance, while broad off-resonant enhancement is also present. The output polarization behavior of the gratings and nano-particle arrays is investigated and matched to plasmonic resonances, and the behavior of coupled modes as a function of inter-particle distance is a…
Optical fiber tapers are used to collect photoluminescence emission at ~1.5 um from photonic crystal cavities fabricated in erbium doped silicon nitride on silicon. Photoluminescence collection via fiber taper is enhanced 2.5 times relative to free space, with a total taper collection efficiency of 53%. By varying the fiber taper offset from the cavity, a broad tuning range of coupling strength is obtained. This material system combined with fiber taper collection is promising for building on-chip optical amplifiers.
One-dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer. Photoluminescence from the cavities around 1.54 um is studied at cryogenic and room temperatures at different optical pump powers. The resonators demonstrate Purcell enhanced absorption and emission rates, also confirmed by time-resolved measurements. Resonances exhibit linewidth narrowing with pump power, signifying absorption bleaching and the onset of stimulated emission in the material at both 5.5 K and room temperature. We estimate from the cavity linewidths that Er has been p…
Silicon-based light sources including light-emitting diodes (LEDs) and laser diodes (LDs) for information transmission are urgently needed for developing monolithic integrated silicon photonics. Silicon doped by ion implantation with erbium ions (Er$^{3+}$) is considered a promising approach, but suffers from an extremely low quantum efficiency. Here we report an electrically pumped superlinear emission at 1.54 $μ$m from Er/O-doped silicon planar LEDs, which are produced by applying a new deep cooling process. Stimulated emission at room temperature is realized with a low threshold current of …
An erbium doped micro-laser is demonstrated utilizing $\mathrm{SiO_{2}}$ microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering gallery type (WGM) modes with intrinsic optical quality factors of up to $6\times{10^{7}}$ and were doped with trivalent erbium ions (peak concentration $\mathrm{\sim3.8\times{10^{20}cm^{-3})}}$ using MeV ion implantation. Coupling to the fundamental WGM of the microdisk resonator was achieved by using a tapered optical fiber. Upon pumping of the $^{4}% I_{15/2}\longrightarrow$ $^{4}I_{13/2}$ erbium transition at 1450 nm, a gradual tra…
Erbium-doped lithium niobate high-Q microdisk cavities were fabricated in batches by UV exposure, inductively coupled plasma reactive ion etching and chemo-mechanical polishing. The stimulated emission at 1531.6 nm was observed under the pump of a narrow-band laser working at 974 nm in erbium-doped lithium niobate microdisk cavity with threshold down to 400 μW and a conversion efficiency of 3.1{\times}10^{-4} %, laying the foundation for the LNOI integrated light source research.
We experimentally show octave-spanning supercontinuum generation in a non-stoichiometric silicon-rich nitride waveguide when pumped by femtosecond pulses from an erbium fiber laser. The pulse energy and bandwidth are comparable to results achieved in stoichiometric silicon nitride waveguides, but our material platform is simpler to manufacture. We also observe wave-breaking supercontinuum generation by using orthogonal pumping in the same waveguide. Additional analysis reveals that the waveguide height is a powerful tuning parameter for generating mid-infrared dispersive waves while keeping th…
Stimulated emission depletion, or STED microscopy is a well-established super-resolution technique, but is ultimately limited by the chosen flourophore. Here we demonstrate STED microscopy with color centers in nanoscale flakes of hexagonal boron nitride using time-gated continuous wave STED. For color centers with zero phonon line emission around 580 nm we measure a STED cross-section of (5.5 $\pm$ 3.2) x $10^{-17} \mbox{cm}^{2}$, achieve a resolution of $\sim$ 50 nm and resolve two color centers separated by 250 nm, which is less than the diffraction limit. The achieved resolution is limited…
Silicon nitride (Si3N4) has emerged as a promising material for integrated nonlinear photonics and has been used for broadband soliton microcombs and low-pulse-energy supercontinuum generation. Therefore understanding all nonlinear optical properties of Si3N4 is important. So far, only stimulated Brillouin scattering (SBS) has not been reported. Here we observe, for the first time, backward SBS in fully cladded Si3N4 waveguides. The Brillouin gain spectrum exhibits an unusual multi-peak structure resulting from hybridization with with high-overtone bulk acoustic resonances (HBARs) of the silic…
Coherent optomechanical interaction between acoustic and optical waves known as stimulated Brillouin scattering (SBS) can enable ultra-high resolution signal processing and narrow linewidth lasers important for next generation wireless communications, precision sensing, and quantum information processing. While SBS has recently been studied extensively in integrated waveguides, many implementations rely on complicated fabrication schemes, using suspended waveguides, or non-standard materials such as As$_2$S$_3$. The absence of SBS in standard and mature fabrication platforms prevents large-sca…
Upconversion of infrared photons is a promising possibility to enhance solar cell efficiency by producing electricity from otherwise unused sub-band-gap photons. We present a rate equation model, and the relevant processes, in order to describe upconversion of near-infrared photons. The model considers stimulated and spontaneous processes, multi-phonon relaxation and energy transfer between neighboring ions. The input parameters for the model are experimentally determined for the material system β-NaEr0.2Y0.8F4. The determination of the transition probabilities, also known as the Einstein coef…
The precise measurement of the gain lifetime at a specific wavelength holds significant importance for understanding the properties of photonic devices and further improving their performances. Here, we show that the evolution of gains can be well characterized by measuring linewidth changes of an optical mode in a microresonator; this method cannot be achieved using time-resolved photoluminescence (PL) spectroscopy. We use an erbium-doped high-Q whispering-gallery microresonator to show the feasibility of this method. With the increase of time after the pump laser is turned off, the transmiss…
The influence of low temperatures on the performance of a high-power single-frequency fiber laser amplifier is evaluated with a numerical simulation. Cooling the fiber can allow to take advantage of both higher damping of the acoustic waves in the silica glass, and higher laser efficiency. We first report on the measurement of the stimulated Brillouin scattering (SBS) threshold in a silica fiber as a function of the temperature from 300~K down to 77~K. We then present the measurements of small-signal absorption and gain spectra of an erbium doped alumino-phosphosilicate fiber, at room temperat…
Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode and moderate propagation loss, gain and power scaling in such integrated micro-to-nanoscale devices prove to be more challenging compared to their bulk counterparts. In this work, stimulated by the prevalent success of double-cladding optical fiber in high-gain/power operation, a Ta2O5 cladding is employed in the erbium doped lithium …
Silicon nitride is awell-established material for photonic devices and integrated circuits. It displays a broad transparency window spanning from the visible to the mid-IR and waveguides can be manufactured with low losses. An absence of nonlinear multi-photon absorption in the erbium lightwave communications band has enabled various nonlinear optic applications in the past decade. Silicon nitride is a dielectric material whose optical and mechanical properties strongly depend on the deposition conditions. In particular, the optical bandgap can be modified with the gas flow ratio during low-pr…
High-efficiency integrated laser on erbium-doped lithium niobate-on-insulator
MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics and TEDA Institute of Applied Physics, Nankai University（南开大学物理学院与泰达应用物理研究院弱光非线性光子学教育部重点实验室）
Strong acousto-optic interaction in silicon-based waveguides generally requires releasing of the silicon core to avoid mechanical leakage into the underlying silica substrate. This complicates fabrication, limits thermalization, reduces the mechanical robustness and hinders large area optomechanical devices on a single chip. Here, we overcome this limitation by employing vertical photonic-phononic engineering. Specifically, the insertion of a thick silicon nitride layer between the silicon guiding core and the silica substrate contributes to reduce GHz-frequencies phonon leakage enabling large…
Mid-infrared optical frequency combs are of significant interest for molecular spectroscopy due to the large absorption of molecular vibrational modes on one hand, and the ability to implement superior comb-based spectroscopic modalities with increased speed, sensitivity and precision on the other hand. Substantial advances in mid-infrared frequency comb generation have been made in recent years based on nonlinear frequency conversion, microresonator Kerr frequency combs, quantum cascade lasers and mode locking regimes. Here we demonstrate a simple, yet effective method for the direct generati…
In the well-known stimulated Brillouin scattering (SBS) process, spontaneous acoustic phonons in materials are stimulated by laser light and scatter the latter into a Stokes sideband. SBS becomes more pronounced in optical fibers and has been harnessed to amplify optical signals and even achieve lasing. Exploitation of SBS has recently surged on integrated photonics platforms as simultaneous confinement of photons and phonons in waveguides leads to drastically enhanced interaction. Instead of being optically stimulated, coherent phonons can also be electromechanically excited with very high ef…
