AI 中文总结
该研究制备掺铒碲酸盐混合波导，经低温退火优化性能，实现传输损耗降低、铒寿命提升及9dB信号增强，为集成光子学低温离子注入工艺提供进展。
AI 中文摘要
本文展示了碲氧化物混合波导中铒离子注入及信号增强的研究。制备了宽度为2μm、高度为100nm的氮化硅条，覆以110nm厚的碲氧化物层形成混合波导，随后进行铒离子注入，注入能量为200keV，剂量为1×10^15 ions/cm²，预计注入峰值深度约为碲氧化物层内50nm。经150℃低温退火30分钟后，传输损耗从1.7dB/cm降至0.9dB/cm，铒寿命从40μm提升至800μm以上。在11cm长的波导中于1550nm波长处测得小信号增强为9dB。这些结果表明，低温离子注入后处理工艺取得进展，可将铒及其他稀土离子掺入碲氧化物薄膜，用于集成光子学应用。
英文摘要
In this paper, we demonstrate erbium ion implantation and signal enhancement in tellurium oxide hybrid waveguides. Silicon nitride strips with a width of 2 $μ$m and a height of 100 nm were clad with a 110-nm-thick tellurium oxide layer to form hybrid waveguides, followed by erbium ion implantation at an energy of 200 keV and a dose of $1\times10^{15} ions/cm^{2}$, with a projected peak implantation depth of approximately 50 nm into the tellurium oxide layer. After low-temperature annealing at 150 °C for 30 minutes, the propagation loss decreased from 1.7 to 0.9 dB/cm, while the erbium lifetime increased from 40 $μ$m to over 800 $μ$m. We measure a small-signal enhancement of 9 dB in an 11-cm-long waveguide at a wavelength of 1550 nm. These results demonstrate progress towards a low-temperature post-ion implantation process for incorporating erbium and other rare earth ions into tellurium oxide films for integrated photonic applications.
