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arXiv 0810.1939physics.optics
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硅中的逆拉曼散射

Inverse Raman Scattering in Silicon

D. R. Solli, P. Koonath, B. Jalali

摘要:

受激拉曼散射是一种众所周知的非线性过程,可以利用它在各种介质中产生光学增益。这种效应已被用于生产第一个硅基激光器和高增益放大器。有趣的是,拉曼效应也可以通过称为逆拉曼散射(IRS)的必然过程产生强度相关的非线性损耗。在这里,我们展示了硅中的IRS--一种通过光学产生的自由载流子的存在而进行实质性修改的过程--在泵浦强度为4 GW/cm^2的情况下实现了>15 dB的衰减水平。具有讽刺意味的是,我们发现,自由载流子吸收,抑制硅中的其他非线性效应的不利影响,实际上有利于IRS延迟相干反斯托克斯拉曼散射的污染的发病。载流子允许在宽的强度范围内显著的IRS衰减。硅基IRS可用于制造芯片级波分复用器、光信号逆变器和快速光开关。

英文摘要:

Stimulated Raman scattering is a well-known nonlinear process that can be harnessed to produce optical gain in a wide variety of media. This effect has been used to produce the first silicon-based lasers and high-gain amplifiers. Interestingly, the Raman effect can also produce intensity-dependent nonlinear loss through a corollary process known as inverse Raman scattering (IRS). Here, we demonstrate IRS in silicon--a process that is substantially modified by the presence of optically-generated free carriers--achieving attenuation levels >15 dB with a pump intensity of 4 GW/cm^2. Ironically, we find that free-carrier absorption, the detrimental effect that suppresses other nonlinear effects in silicon, actually facilitates IRS by delaying the onset of contamination from coherent anti-Stokes Raman scattering. The carriers allow significant IRS attenuation over a wide intensity range. Silicon-based IRS could be used to produce chip-scale wavelength-division multiplexers, optical signal inverters, and fast optical switches.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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