发表机构
NTT Nanophotonics Center, NTT, Inc.; Basic Research Laboratories, NTT, Inc.; International Center for Elementary Particle Physics, University of Tokyo; Device Technology Laboratories, NTT, Inc.; Institute of Science Tokyo（NTT公司纳米光子学中心; NTT公司基础研究实验室; 东京大学国际基本粒子物理中心; NTT公司器件技术实验室; 东京科学大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
该研究通过逆设计优化二维氮化硅光子晶体腔，实现近化学计量比二维氮化硅光子晶体腔最高约80000的品质因数，从同一腔观测到二次与三次谐波产生，确立其为非线性光子学及异质集成光子器件的有前景平台。
AI 中文摘要
氮化硅（SiN）光子晶体（PhC）腔因宽透明窗口、CMOS兼容性及可忽略的双光子吸收，成为非线性与量子光子学的有前景平台。但受限于SiN相对较低的折射率，实现高品质因数/模式体积（Q/V）腔仍具挑战。本研究采用逆设计优化二维SiN PhC腔，实验实现约80000的品质因数，为近化学计量比SiN二维PhC腔的最高报道值。此外，从同一腔中观测到二次与三次谐波产生，为强光学限制及大Q/V提供实验证据。研究结果确立逆设计SiN PhC腔为非线性光子学及未来异质集成光子器件的有前景平台。
英文摘要
SiN photonic crystal (PhC) cavities are promising platforms for nonlinear and quantum photonics because of their wide transparency window, CMOS compatibility, and negligible two-photon absorption. However, realizing high-Q/V cavities remains challenging because of the relatively low refractive index of SiN. Here, we employ inverse design to optimize a two-dimensional SiN PhC cavity and experimentally demonstrate a quality factor of approximately 80,000, the highest reported for a near-stoichiometric SiN 2D PhC cavity. Furthermore, both second- and third-harmonic generation are observed from the same cavity, providing experimental evidence of strong optical confinement and large Q/V. Our results establish inverse-designed SiN PhC cavities as a promising platform for nonlinear photonics and future heterogeneous integrated photonic devices.
