The magnetic circular dichroism of III-V diluted magnetic semiconductors, calculated within a theoretical framework suitable for highly disordered materials, is shown to be dominated by optical transitions between the bulk bands and an impurity band formed from magnetic dopant states. The theoretical framework incorporates real-space Green's functions to properly incorporate spatial correlations in the disordered conduction band and valence band electronic structure, and includes extended and localized electronic states on an equal basis. Our findings reconcile unusual trends in the experimental magnetic circular dichroism in III-V DMSs with the antiferromagnetic p-d exchange interaction between a magnetic dopant spin and its host.
We report on the results of x-ray absorption (XAS), x-ray magnetic circular dichroism (XMCD), and photoemission experiments on {\it n}-type Zn$_{1-x}$Co$_x$O ($x=0.05$) thin film, which shows ferromagnetism at room temperature. The XMCD spectra show a multiplet structure, characteristic of the Co$^{2+}$ ion tetrahedrally coordinated by oxygen, suggesting that the ferromagnetism comes from Co ions substituting the Zn site in ZnO. The magnetic field and temperature dependences of the XMCD spectra imply that the non-ferromagnetic Co ions are strongly coupled antiferromagnetically with each other.
We have performed x-ray magnetic circular dichroism (XMCD) and valence-band photoemission studies of the diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te. XMCD signals due to ferromagnetism were observed at the Cr 2p absorption edge. Comparison with atomic multiplet calculations suggests that the magnetically active component of the Cr ion was divalent under the tetrahedral crystal field with tetragonal distortion along the crystalline a-, b-, and c-axes. In the valence-band spectra, spectral weight near the Fermi level was strongly suppressed, suggesting the importance of Jahn-Teller ef…
Magneto-optical properties of the ferromagnetic semiconductor GaMnAs are studied in a material specific multi-band tight-binding approach. Two realistic models are compared: one has no impurity band while the other shows an impurity band for low Mn concentrations. The calculated magnetic circular dichroism (MCD) is positive for both models proving that, unlike previously asserted, the observed positive MCD signal is inconclusive as to the presence or absence of an impurity band in GaMnAs. The positive MCD is due to the antiferromagnetic p-d coupling and the transitions into the conduction band…
The electronic structure of a prototype dilute magnetic semiconductor (DMS), Ga1-xMnxAs, is studied by magnetic circular dichroism (MCD) spectroscopy. We prove that the optical transitions originated from impurity bands cause the strong positive MCD background. The MCD signal due to the E0 transition from the valence band to the conduction band is negative indicating that the p-d exchange interactions between the p-carriers and d-spin is antiferromagnetic. The negative E0 MCD signal also indicates that the hole-doping of the valence band is not so large as previously assumed. The impurity band…
To clarify whether or not (Ga,Cr)As is an intrinsic diluted magnetic semiconductor, a systematic study of the magnetic circular dichroism (MCD) was carried out for a series of (Ga,Cr)As epilayers grown by the low-temperature molecular-beam epitaxy technique. The present work provides unambiguous evidence for the intrinsic ferromagnetism of the (Ga,Cr)As epilayers with all the necessary properties in accordance with that of a diluted magnetic semiconductor, especially the hysteresis characteristics, which is opened up in the magnetic field dependence of MCD.
Magneto-optical properties of ZnO:Co and ZnO:Ni films were measured. Magnetization measurements show that some of the films are paramagnetic and others are ferromagnetic. Magnetic circular dichroism clarified that Zn1-xCoxO and Zn1-xNixO included in samples are paramagnetic diluted magnetic semiconductors. Ferromagnetic precipitations seem to be responsible for the observed ferromagnetic behaviors. Criteria to judge the ferromagnetic DMS are also discussed.
We have studied the critical temperature of Diluted Magnetic Semiconductors by means of Monte Carlo simulations and Coherent-Potential-Approximation (CPA) calculations. In our model for this syste m, the magnetic ions couple with the carriers through an antiferromagnetic exchange interaction, $J$, and an electrostatic interaction $W$. The effective impurity potential $J-W$ controls the hybridization between the magnetic impurities and the hole charge on the dopants. We find that the critical temperature depends substantially on the hole charge on the magnetic impurities. The CPA critical tempe…
The electronic structure of doped Mn in (Ga,Mn)As is studied by resonant inelastic X-ray scattering (RIXS). From configuration-interaction cluster-model calculations, the line shapes of the Mn $L_3$ RIXS spectra can be explained by $d$-$d$ excitations from the Mn$^{3+}$ ground state, dominated by charge-transferred states, rather than a Mn$^{2+}$ ground state. Unlike archetypical $d$-$d$ excitation, the peak widths are broader than the experimental energy resolution. We attribute the broadening to a finite lifetime of the $d$-$d$ excitations, which decay rapidly to electron-hole pairs in the h…
We present a theoretical study of diluted magnetic semiconductors that includes spin-orbit coupling within a realistic host band structure and treats explicitly the effects of disorder due to randomly substituted Mn ions. While spin-orbit coupling reduces the spin polarization by mixing different spin states in the valence bands, we find that disorder from Mn ions enhances the spin polarization due to formation of ferromagnetic impurity clusters and impurity bound states. The disorder leads to large effects on the hole carriers which form impurity bands as well as hybridizing with the valence …
We present a theoretical study of diluted magnetic semiconductors that treats the local sp-d exchange interaction J between the itinerant carriers and the Mn d electrons within a realistic band structure and goes beyond previous mean-field approaches. In case of (Ga,Mn)As, we find that strong exchange potentials tightly bind carriers near impurity sites. Spin-orbit coupling is found to have a more pronounced effect on spin polarization at weak coupling and this feature can be exploited for magnetotransport. For low doping regime, we predict that spin-orbit coupling splits impurity bands and ca…
We calculate the Coulomb interaction induced density, temperature and magnetization dependent many-body band-gap renormalization in a typical diluted magnetic semiconductor GaMnAs in the optimally-doped metallic regime as a function of carrier density and temperature. We find a large (about 0.1 eV) band gap renormalization which is enhanced by the ferromagnetic transition. We also calculate the impurity scattering effect on the gap narrowing. We suggest that the temperature, magnetization, and density dependent band gap renormalization could be used as an experimental probe to determine the va…
We consider the optical properties of a single magnetic impurity in a self-assembled quantum dot. We show that using the resonant pumping one can address and manipulate selectively individual spin states of a magnetic impurity. The mechanisms of resonant optical polarization of a single impurity in a quantum dot involve anisotropic exchange interactions and are different to those in diluted semiconductors. A Mn impurity can act as qubit. The limiting factors for the qubit manipulation are the electron-hole exchange interaction and finite temperature.
The crossover between an impurity band (IB) and a valence band (VB) regime as a function of the magnetic impurity concentration in models for diluted magnetic semiconductors (DMS) is studied systematically by taking into consideration the Coulomb attraction between the carriers and the magnetic impurities. The density of states and the ferromagnetic transition temperature of a Spin-Fermion model applied to DMS are evaluated using Dynamical Mean-Field Theory (DMFT) and Monte Carlo (MC) calculations. It is shown that the addition of a square-well-like attractive potential can generate an IB at s…
Applying the dynamical coherent potential approximation to a simple model, we have systematically studied the carrier states in $A_{1-x}$Mn$_xB$-type diluted magnetic semiconductors (DMS's). The model calculation was performed for three typical cases of DMS's: The cases with strong and moderate exchange interactions in the absence of nonmagnetic potentials, and the case with strong attractive nonmagnetic potentials in addition to moderate exchange interaction. When the exchange interaction is sufficiently strong, magnetic impurity bands split from the host band. Carriers in the magnetic impuri…
In a recent Letter, Berciu and Bhatt have presented a mean-field theory of ferromagnetism in III-V semiconductors doped with manganese, starting from an impurity band model. We show that this approach gives an unphysically broad impurity band and is thus not appropriate for (Ga,Mn)As containing 1-5% Mn. We also point out a microscopically unmotivated sign change in the overlap integrals in the Letter. Without this sign change, stable ferromagnetism is not obtained.
The variation of TO zone-center vibration spectra with concentration in mixed zincblende-type semiconductors can be understood within a paradigm of unified "one bond - two modes" approach, which has been recently outlined as a rather general concept, and emerges from a number of previous experimental and theoretical studies. The crucial issue is that the vibration frequency, associated with a certain cation-anion bond, depends on the length of the latter, and the bond length, in its turn, depends not only on the average alloy concentration, but on local variations of it. In an (A,B)C substitut…
Considering a general situation where a semiconductor is doped by magnetic impurities leading to a carrier-induced ferromagnetic exchange coupling between the impurity moments, we show theoretically the possible generic existence of three ferromagnetic transition temperatures, T_1 > T_2 > T_3, with two distinct ferromagnetic regimes existing for T_1 > T > T_2 and T < T_3. Such an intriguing re-entrant ferromagnetism, with a paramagnetic phase (T_2 > T > T_3) between two ferromagnetic phases, arises from a subtle competition between indirect exchange induced by thermally activated carriers in a…
We have undertaken a study of diluted magnetic semiconductors $Ga_{1-x}Mn_{x}N$ and $Ga_{1-x}Cr_{x}N$ with $x=0.0625, 0.125$, using the all electron linearized augmented plane wave method (LAPW) for different configurations of Mn as well as Cr. We study four possible configurations of the impurity in the wurtzite GaN structure to predict energetically most favorable structure within the 32 atom supercell and conclude that the near-neighbor configuration has the lowest energy. We have also analyzed the ferro-magnetic as well as anti-ferromagnetic configurations of the impurity atoms. The densit…
Although the Ni_4 cluster includes more information regarding the Ni band structure with respect to the Anderson impurity model, it also favors very peculiar ground states which are incompatible with a coherent picture of all dichroism experiments.
We theoretically investigate impurity correlation and magnetic clustering effects on the long-range ferromagnetic ordering in diluted magnetic semiconductors, such as $\textrm{Ga}_{1-x}\textrm{Mn}_{x}\textrm{As}$, using analytical arguments and direct Monte Carlo simulations. We obtain an analytic formula for the ferromagnetic transition temperature $T_{c}$ which becomes asymptotically exact in the strongly disordered, highly dilute (i.e. small $x$) regime. We establish that impurity correlations have only small effects on $T_{c}$ with the neutrally correlated random disorder producing the nom…
The expected features of diluted magnetic semiconductors still remain in controversial issue, concerning whether or not s, p-d (f) exchange interactions indeed modify the host semiconductor band structure. To solve this doubt, a new scheme for measuring magneto-optical (MO) effect is developed, called magnetic photoresistance circular dichroism (PR-MCD), which detects the differential photoresistance of materials between two circularly polarized excitations. That allows us to detect the MO effect induced only by interband transitions, and provide unambiguous evidence that the host semiconducto…
Cobalt-doped ZnO (Co2+:ZnO) films were studied by magnetic circular dichroism (MCD) spectroscopy. A broad 300 K ferromagnetic MCD signal was observed between 1.4 and 4.0 eV after introducing shallow donor states by exposure of paramagnetic Co2+:ZnO films to zinc vapor. The new sub-bandgap ferromagnetic MCD intensity is attributed to low-energy photoionization transitions originating from a spin-split donor impurity band in ferromagnetic Co2+:ZnO.
Impurity diffusion coefficients are entirely obtained from a low cost classical molecular statics technique (CMST). In particular, we show how the CMST is appropriate in order to describe the impurity diffusion behavior mediated by a vacancy mechanism. In the context of the five-frequency model, CMST allows to calculate all the microscopic parameters, namely: the free energy of vacancy formation, the vacancy-solute binding energy and the involved jump frequencies, from them, we obtain the macroscopic transport magnitudes such as: correlation factor, solvent-enhancement factor, Onsager and diff…
Using spin-1/2 description of valence holes and Kondo coupling between local spins and carriers, GaAs-based III-V diluted magnetic semiconductors (DMS)are studied in the coherent potential approximation(CPA). Our calculated relation of ground-state energy and impurity magnetization shows that ferromagnetism is always favorable at low temperatures. For very weak Kondo coupling, the density of states (DOS) of the host semiconductor is not modified much. Impurity band can be generated at the host band bottom only when Kondo coupling is strong enough. Using Weiss molecular theory, we predict a lin…
Wurtzite GaN:Mn films on sapphire substrates were successfully grown by use of the molecular beam epitaxy (MBE) system. The film has an extremely high Curie temperature of around 940 K, although the Mn concentration is only about 3 ~ 5 %. Magnetization measurements were carried out in magnetic fields parallel to the film surface up to 7 T. The magnetization process shows the coexistence of ferromagnetic and paramagnetic contributions at low temperatures, while the typical ferromagnetic magnetization process is mainly observed at high temperatures because of the decrease of the paramagnetic con…
We present a detailed study, within the mean-field approximation, of an impurity band model for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier densities, below and near the metal-insulator transition. Positional disorder of the magnetic impurities inside the host semiconductor is shown to have observable consequences for the shape of the magnetization curve. Below the critical temperature the magnetization is spatially inhomogeneous, leading to very unusual temperature dependence of the average magnetization as well as specific heat. Disorder is also foun…
Impurity diffusion coefficients are entirely obtained from a low cost classical molecular statics technique (CMST). In particular, we show how CMST is appropriate in order to describe the impurity diffusion behavior mediated by a vacancy mechanism. In the context of the five-frequency model, CMST allows to calculate all the microscopic parameters, namely: the free energy of vacancy formation, the vacancy-solute binding energy and the involved jump frequencies, from them, we obtain the macroscopic transport magnitudes such as: correlation factor, solvent-enhancement factor, Onsager and diffusio…
The electronic structure of the new diluted magnetic semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ ($x=0.30$, $y=0.15$) in single crystal form has been investigated by angle-resolved photoemission spectroscopy (ARPES). %High density of states of nondispersive bands composed of the Zn $3d$ orbitals are observed with ultraviolet incident light. Measurements with soft x-rays clarify the host valence-band electronic structure primarily composed of the As $4p$ states. Two hole pockets around the $Γ$ point, a hole corrugated cylinder surrounding the $Γ$ and Z points, and an elect…
We present a unified interpretation of experimentally observed magnetic circular dichroism (MCD) in the ferromagnetic semiconductor (Ga,Mn)As, based on theoretical arguments, which demonstrates that MCD in this material arises primarily from a difference in the density of spin-up and spin-down states in the valence band brought about by the presence of the Mn impurity band, rather than being primarily due to the Zeeman splitting of electronic states.
While achieving high Curie temperatures (above room temperature) in diluted magnetic semiconductors remains a challenge in the case of well controlled homogeneous alloys, several systems characterized by a strongly inhomogeneous incorporation of the magnetic component appear as promising. Incorporation of manganese into germanium drastically alters the growth conditions, and in certain conditions of low temperature Molecular Beam Epitaxy it leads to the formation of well organized nanocolumns of a Mn-rich material, with a crystalline structure in epitaxial relationship with the Mn-poor germani…
We employ a self-consistent Green's function approach to investigate the spin-wave relaxation Γ(p) in diluted magnetic semiconductors. We find the trend of the spin-wave relaxation strongly depends on the ratio of the itinerant and impurity spin densities. For density ratios in the Ruderman-Kittel-Kasuya-Yosida phase, Γ(p) decreases even though thermal fluctuations increase. On the other hand, in the strong coupling phase, an interesting peak structure appears. We discuss the implications of our numerical results for experiments.
In recent years, disorder has been shown to be crucial for the understanding of diluted magnetic semiconductors. Effects of disorder in these materials are reviewed with the emphasis on theoretical works. The types and spatial distribution of defects are discussed. The effect of disorder on the intimately related transport and magnetic properties are considered from the viewpoint of both the band picture and the isolated-impurity approach. Finally, the derivation and properties of spin-only models are reviewed.
Applying the dynamical coherent potential approximation to a simple model, we have theoretically studied the behavior of the optical bandedge in diluted magnetic semiconductors (DMSs). For $A^{\rm II}_{1-x}$Mn$_{x}B^{\rm VI}$-type DMS, the present study reveals that the linear relationship between exchange-spitting $\mitΔE_{ex} $ and the averaged magnetization $|x < S_z >|$ widely holds for different values of $x$. The ratio, $\mitΔE_{ex}/x < S_z>$, however, depends not only the exchange strength but also the band offset. Furthermore, the present study reveals that in the low dilution of Ga$_{…
Using Dynamical Mean Field Theory (DMFT) and Monte Carlo (MC) simulations, we study the ferromagnetic transition temperature Tc of a two-band model for Diluted Magnetic Semiconductors (DMS), varying coupling constants, hopping parameters, and carrier densities. We found that Tc is optimized at all fillings p when both impurity bands (IB) fully overlap in the same energy range, namely when the exchange couplings J and bandwidths are identical. The optimal Tc is found to be about twice larger than the maximum value obtained in the one-band model, showing the importance of multiband descriptions …
We systematically investigate, using ab initio density-functional theory calculations, the properties of interstitial and substitutional Mn in both Si and Ge, as well as in the Si(1-x)Gex alloy. We show that volume effects are not the main reason Mn prefers to be a subsitutional impurity in pure Ge, and chemical effects, therefore, play an important role. Using realistic models of Si(1-x)Gex, we show that for x approximately greater than 0.16 substitutional Mn in Ge-rich neighborhoods become more stable than interstitial Mn, which may allow the growth of Si-based diluted magnetic semiconductor…
We have performed x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) studies of the diluted ferromagnetic semiconductor Zn$_{1-\textit{x}}$Cr$_\textit{x}$Te doped with iodine (I) or nitrogen (N), corresponding to electron or hole doping, respectively. From the shape of the Cr $2p$ absorption peak in the XAS spectra, it was concluded that Cr ions in the undoped, I-doped and lightly N-doped samples are divalent (Cr$^{2+}$), while Cr$^{2+}$ and trivalent (Cr$^{3+}$) coexist in the heavily N-doped sample. This result indicates that the doped nitrogen atoms act as acce…
We study the possibility of d0 ferromagnetism in the compound MgO doped with nitrogen (N). The Haldane-Anderson impurity model is formulated within the tight-binding approximation for determining the host band-structure and the impurity-host hybridization. Using the quantum Monte Carlo technique, we observe a finite local moment for an N impurity, and long-range ferromagnetic correlations between two N impurities. The ferromagnetic correlations are strongly influenced by the impurity bound state. When the ferromagnetic correlation between a pair of impurities is mapped onto the isotropic Heise…
The carrier spin and impurity spin densities in diluted magnetic semiconductors are considered using a semiclassical approach. Equations of motions for the spin densities and the carrier spin current density in the paramagnetic phase are derived, exhibiting their coupled diffusive dynamics. The dynamical spin susceptibilities are obtained from these equations. The theory holds for p-type and n-type semiconductors doped with magnetic ions of arbitrary spin quantum number. Spin-orbit coupling in the valence band is shown to lead to anisotropic spin diffusion and to a suppression of the Curie tem…
Spectroscopic data demonstrate that impurity D/A levels in doped semiconductor nanostructures are energetically pinned, resulting in variations in D/A binding energies with increasing quantum confinement. Using magnetic circular dichroism spectroscopy, the donor binding energies of Co2+ ions in colloidal ZnSe quantum dots have been measured as a function of quantum confinement and analyzed in conjunction with ab initio density functional theory calculations. The resulting experimental demonstration of pinned impurity levels in quantum dots has far-reaching implications for physical phenomena i…
We propose a new scheme for numerically computing collective-mode spectra for large-size systems, using a reformulation of the Random Phase Approximation. In this study, we apply this method to investigate the spectrum and nature of the spin-waves of a (III,Mn)V Diluted Magnetic Semiconductor. We use an impurity band picture to describe the interaction of the charge carriers with the local Mn spins. The spin-wave spectrum is shown to depend sensitively on the positional disorder of the Mn atoms inside the host semiconductor. Both localized and extended spin-wave modes are found. Unusual spin a…
We develop a theory for two-dimensional diluted magnetic semiconductor systems (e.g. $\textrm{Ga}_{1-x}\textrm{Mn}_{x}\textrm{As}$ layers) where the itinerant carriers mediating the ferromagnetic interaction between the impurity local moments, as well as the local moments themselves, are confined in a two-dimensional layer. The theory includes exact spatial disorder effects associated with the random local moment positions within a disordered RKKY lattice field theory description. We predict the ferromagnetic transition temperature ($T_{c}$) as well as the nature of the spontaneous magnetizati…
We develop a lattice mean field theory for ferromagnetic ordering in diluted magnetic semiconductors by taking into account the spatial fluctuations associated with random disorder in the magnetic impurity locations and the finite mean free path associated with low carrier mobilities. Assuming a carrier-mediated indirect RKKY exchange interaction among the magnetic impurities, we find substantial deviation from the extensively used continuum Zener model Weiss mean-field predictions. Our theory allows accurate analytic predictions for Tc, and provides simple explanations for a number of observe…
We have synthesized ferromagnetic InMnP, a member of III-Mn-V ferromagnetic semiconductor family, by Mn ion implantation and pulsed laser annealing. Clear ferromagnetic hysteresis loops and a perpendicular magnetic anisotropy are observed up to a Curie temperature of 42 K. Large values of negative magnetoresistance and magnetic circular dichroism as well as anomalous Hall effect are further evidences of a ferromagnetic order in InMnP. An effort is made to understand the transport mechanism in InMnP using the theoretical models. We find that the valence band of InP does not merge with the impur…
The presence of nanoscale inhomogeneities has been experimentally evidenced in several diluted magnetic systems, which in turn often leads to interesting physical phenomena. However, a proper theoretical understanding of the underlying physics is lacking in most of the cases. Here we present a detailed and comprehensive theoretical study of the effects of nanoscale inhomogeneities on the temperature dependent spontaneous magnetization in diluted magnetic systems, which is found to exhibit an unusual and unconventional behavior. The effects of impurity clustering on the magnetization response h…
We have studied the electronic structure of Zn$_{0.9}$Fe$_{0.1}$O nano-particles, which have been reported to show ferromagnetism at room temperature, by x-ray photoemission spectroscopy (XPS), resonant photoemission spectroscopy (RPES), x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the experimental and cluster-model calculation results, we find that Fe atoms are predominantly in the Fe$^{3+}$ ionic state with mixture of a small amount of Fe$^{2+}$ and that Fe$^{3+}$ ions are dominant in the surface region of the nano-particles. It is shown that the roo…
We show that the choice of the sign of the hopping matrix in our impurity band model for disordered III-V diluted magnetic semiconductors [PRL 87, 107293 (2000); cond-mat/0111045] is justified: with this choice, the impurity band is placed inside the gap and it has a mobility edge, as expected for a disordered system. The other sign choice, suggested in cond-mat/0111504, leads to an unphysical description of the occupied states of the impurity band (extremely long tail, no mobility edge, no bulk ferromagnetism).
(Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerged from numerous experimental and theoretical studies, the mechanism of the ferromagnetism in (Ga,Mn)As still remains a puzzling enigma. In this Letter, we use soft x-ray angle-resolved photoemission spectroscopy to positively identify the ferromagnetic Mn 3d-derived impurity band in (Ga,Mn)As. The band appears hybridized with the light-hole band of the host GaAs. These findings conclude the picture of the valence band structure of (Ga,Mn)As dis…
For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by carefully shifting the Fermi level by means of carrier compensation. We use helium-ion implantation, a standard industry technology, to precisely compensate the hole doping of GaAs-based diluted ferromag…
The electronic structure of the Cr ions in the diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te ($x=0.03$ and 0.15) thin films has been investigated using x-ray magnetic circular dichroism (XMCD) and photoemission spectroscopy (PES). Magnetic-field ($H$) and temperature ($T$) dependences of the Cr $2p$ XMCD spectra well correspond to the magnetization measured by a SQUID magnetometer. The line shape of the Cr $2p$ XMCD spectra is independent of $H$, $T$, and $x$, indicating that the ferromagnetism is originated from the same electronic states of the Cr ion. Cluster-model analysis indicat…
Diluted magnetic semiconductors (DMS) like Ga$_{1-x}$Mn$_{x}$As are described by a realistic tight-binding model (TBM) for the (valence) bands of GaAs, by a Zener (J-)term modeling the coupling of the localized Mn-spins to the spins of the valence band electrons, and by an additional potential scattering (V-) term due to the Mn-impurities. We calculate the effective (Heisenberg) exchange interaction between two Mn-moments mediated by the valence electrons. The influence of the number of bands taken into account (6-band or 8-band TBM) and of the potential (impurity) scattering V-term is investi…
The transport properties of diluted magnetic semiconductors (DMS) are calculated using dynamical mean field theory (DMFT) and Boltzmann transport theory. Within DMFT we study the density of states and the dc-resistivity, which are strongly parameter dependent such as temperature, doping, density of the carriers, and the strength of the carrier-local impurity spin exchange coupling. Characteristic qualitative features are found distinguishing weak, intermediate, and strong carrier-spin coupling and allowing quantitative determination of important parameters defining the underlying ferromagnetic…
We study the carrier transport and magnetic properties of group-IV-based ferromagnetic semiconductor Ge1-xFex thin films (Fe concentration x = 2.3 - 14 %) with and without boron (B) doping, by measuring their transport characteristics; the temperature dependence of resistivity, hole concentration, mobility, and the relation between the anomalous Hall conductivity versus conductivity. At relatively low x (= 2.3 %), the transport in the undoped Ge1-xFex film is dominated by hole hopping between Fe-rich hopping sites in the Fe impurity band, whereas that in the B-doped Ge1-xFex film is dominated …
BiFeO$_3$ (BFO) shows both ferroelectricity and magnetic ordering at room temperature but its ferromagnetic component, which is due to spin canting, is negligible. Substitution of transition-metal atoms such as Co for Fe is known to enhance the ferromagnetic component in BFO. In order to reveal the origin of such magnetization enhancement, we performed soft x-ray absorption spectroscopy (XAS) and soft x-ray magnetic circular dichroism (XMCD) studies of BiFe$_{1-x}$Co$_x$O$_3$ ({\it x} = 0 to 0.30) (BFCO) thin films grown on LaAlO$_3$(001) substrates. The XAS results indicated that the Fe and C…
The magnetic properties of Zn$_{1-x}$Co$_x$O ($x=0.07$ and 0.10) thin films, which were homo-epitaxially grown on a ZnO(0001) substrates with varying relatively high oxygen pressure, have been investigated using x-ray magnetic circular dichroism (XMCD) at Co $2p$ core-level absorption edge. The line shapes of the absorption spectra are the same in all the films and indicate that the Co$^{2+}$ ions substitute for the Zn sites. The magnetic-field and temperature dependences of the XMCD intensity are consistent with the magnetization measurements, indicating that except for Co there are no additi…
X-ray magnetic circular dichroism and resonant inelastic X-ray scattering explained: role of many-body correlation and valence fluctuations
Seoul National University（首尔大学）；Institute for Basic Science（基础科学研究院）；SLAC National Accelerator Laboratory（斯坦福直线加速器国家实验室）；Fudan University（复旦大学）；University of California, Davis（加州大学戴维斯分校）；University of Illinois（伊利诺伊大学）；National Institute of Standards and Technology（美国国家标准与技术研究院）
The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. The divergences arise from the results indicating that the holes mediated ferromagnetism reside in the valence band or the impurity band. Full understanding of character of the Mn states in GaAs can bring the increase of (Ga,Mn)As Curie temperature. In this paper we verify the ellipsometric results and compare with more precise photoreflectance method which gives a new insight into the interactions of Mn impurity states with GaAs valence band. Indeed, $E_{1}$ …
