揭示磁性半导体（Ga，Mn）As中诱导铁磁性的杂质带
Unveiling the impurity band inducing ferromagnetism in magnetic semiconductor (Ga,Mn)As
摘要：
(Ga（Mn）As是一种典型的稀磁半导体，它通过掺杂空穴载流子而表现出铁磁性。尽管在大量的实验和理论研究中出现了一些有争议的模型，但（Ga，Mn）As的铁磁性机制仍然是一个令人困惑的谜。在这封信中，我们使用软X射线角分辨光电子能谱，积极确定铁磁锰3d衍生杂质带（Ga，Mn）As。该带与宿主GaAs的光空穴带出现杂化。这些发现总结了十多年来有争议的（Ga，Mn）As的价带结构的图片。IB的非色散特性及其在价带最大值附近的位置表明Mn 3d衍生的杂质带形成为由Anderson杂质模型预测的分裂Mn杂质态。（Ga，Mn）As的铁磁性是由于杂质带中空穴载流子的输运。
英文摘要：
(Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerged from numerous experimental and theoretical studies, the mechanism of the ferromagnetism in (Ga,Mn)As still remains a puzzling enigma. In this Letter, we use soft x-ray angle-resolved photoemission spectroscopy to positively identify the ferromagnetic Mn 3d-derived impurity band in (Ga,Mn)As. The band appears hybridized with the light-hole band of the host GaAs. These findings conclude the picture of the valence band structure of (Ga,Mn)As disputed for more than a decade. The non-dispersive character of the IB and its location in vicinity of the valence-band maximum indicate that the Mn 3d-derived impurity band is formed as a split-off Mn-impurity state predicted by the Anderson impurity model. Responsible for the ferromagnetism in (Ga,Mn)As is the transport of hole carriers in the impurity band.
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