We compute the thermal conductance between two nanoparticles in contact based on the Molecular Dynamics technique. The contact is generated by letting both particles stick together under van der Waals attractions. The thermal conductance is derived from the fluctuation-dissipation theorem and the time fluctuations of the exchanged power. We show that the conductance is proportional to the atoms involved in the thermal interaction. In the case of silica, the atomic contribution to the thermal conductance is in the range of 0.5 to 3 nW.K-1. This result fits to theoretical predictions based on characteristic times of the temperature fluctuation. The order of magnitude of the contact conductance is 1 μW.K-1 when the cross section ranges from 1 to 10nm2.
The cooling dynamics of glass-embedded noble metal nanoparticles with diameters ranging from 4 to 26 nm were studied using ultrafast pump-probe spectroscopy. Measurements were performed probing away from the surface plasmon resonance of the nanoparticles to avoid spurious effects due to glass heating around the particle. In these conditions, the time-domain data reflect the cooling kinetics of the nanoparticle. Cooling dynamics are shown to be controlled by both thermal resistance at the nanoparticule?glass interface, and heat diffusion in the glass matrix. Moreover, the interface conductances…
We report the chemical synthesis of Fe-core/Au-shell nanoparticles by a reverse micelle method, and the investigation of their growth mechanisms and oxidation-resistant characteristics. The core-shell structure and the presence of the Fe & Au phases have been confirmed by transmission electron microscopy, energy dispersive spectroscopy, X-ray diffraction, Mossbauer spectroscopy, and inductively coupled plasma techniques. Additionally, atomic-resolution Z-contrast imaging and electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) have been used to study d…
We investigated temperature dependence of contact resistance of an Au-Ti-Pd2Si ohmic contact to heavily doped n+-Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In this case, the limiting process is diffusion input of electrons to the metal shunts. The proposed mechanism of contact resistance formation seems to realize also in the case of wide-gap semiconductors with high concentration of surface states and dislocation density in the contact.
(withdrawn) A combined study of magnetic susceptibility and AC resistance was performed on melt-spun Cu-Co granular magnetic ribbons. The AC resistance as a function of temperature has a sharp maximum. We associate it with a diverging correlation length at the temperature of collective freezing of magnetic moments via increasing magnetic losses in the induced non-uniform field. Application of this model to the experimental data allows a direct determination of the critical exponent of correlation length on both sides of the transition. Giant AC magnetoresistance is observed at the freezing tem…
In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying widths and separation between contacts have been fabricated and electrically characterized in ambient air and vacuum condition. Electrical contacts are made with five metals: gold, nickel, nickel/gold, palladium and platinum/gold. The lowest value of 92 Ωμm is observed for the contact resistance between graphene and gold, extracted from back-gated devices at an applied back-gate bias of -40 V. Measurements carried ou…
We report a systematic study of the bias-dependent contact resistance in rubrene single-crystal field-effect transistors with Ni, Co, Cu, Au, and Pt electrodes. We show that the reproducibility in the values of contact resistance strongly depends on the metal, ranging from a factor of two for Ni to more than three orders of magnitude for Au. Surprisingly, FETs with Ni, Co, and Cu contacts exhibits an unexpected reproducibility of the bias-dependent differential conductance of the contacts, once this has been normalized to the value measured at zero bias. This reproducibility may enable the stu…
Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties as performance killers, as a very small density of states in graphene might suppress the current injection from metal to graphene. This paper systematically reviews the metal/graphene contact properties and discusses the present status and future requirements of the specific contact resistivity.
We report the effect of varying cobalt thickness on the temperature-dependent time decay of the electrical resistance of Co/Sb multilayer samples. We find that for a given temperature, a five fold change in the Co thickness produces a 100 fold change in the characteristic decay time of the resistance. We find that the characteristic decay time, as a function of temperature, follows an Arrhenius law. During deposition, the Co evolves single domain magnetic nanoparticles, on the Sb, in either a Volmer-Weber or Stranski-Krastanov growth mode. This metastable state is then encased in 2.5 nm of Sb …
Accurate measurements of the thermal resistance between micro-objects made of insulating materials are complex because of their small size, low conductivity, and the presence of various ill-defined gaps. We address this issue using a modified scanning thermal microscope operating in vacuum and in air. The sphere-plate geometry is considered. Under controlled heating power, we measure the temperature on top of a glass microsphere glued to the probe as it approaches a glass plate at room temperature with nanometer accuracy. In vacuum, a jump is observed at contact. From this jump in temperature …
We present molecular dynamics (MD) simulations of radiation damage in pure Fe nanoparticles (NP) and bimetallic FeCu core-shell nanoparticles (CSNP). The CSNP includes a perfect body centered cubic (bcc) Fe core coated with a face-centered cubic (fcc) Cu shell. Irradiation with Fe Primary Knock-on Atoms (PKA) with energies between 1 and 7 keV leads to point defects, without clustering beyond divacancies and very few slightly larger vacancy clusters, and without interstitial clusters, unlike what happens in bulk at the same PKA energies. The Fe-Cu interface and shell can act as a defect sink, a…
In this report, the contact resistance between "electrode" and "lead" is investigated for reasonable measurements of samples' resistance in a polypyrrole (PPy) nanowire device. The sample's resistance, including "electrode-lead" contact resistance, shows a decrease as force applied to the interface increases. Moreover, the sample's resistance becomes reasonably similar to, or lower than, values calculated by resistivity of PPy reported in previous studies. The decrease of electrode-lead contact resistance by increasing the applying force was analyzed by using Holm theory: the general equation …
The intrinsic channel properties of monolayer and multilayer graphene were systematically investigated as a function of layer number by the exclusion of contact resistance using four-probe measurements. We show that the continuous change in normalized sheet resistivity from graphite to a bilayer graphene is governed by one unique property, i.e., the band overlap, which markedly increases from 1 meV for a bilayer graphene to 11 meV for eight layers and eventually reaches 40 meV for graphite. The monolayer graphene, however, showed a deviation in temperature dependence due to a peculiar linear d…
The paper proposes a strict diffusion theory of the electrical contact resistance of a thermoelectric superlattice (TES) - metal couple.The limits of the contact resistance for traditional thermoeletric materials with parabolic band spectrum and for superlattices described by Fivaz model are estimated.
Edge contact geometries are thought to yield ultralow contact resistances in most non-ferromagnetic metal-graphene interfaces owing to their large metal-graphene coupling strengths. Here, we examine the contact resistance of edge- versus surface-contacted ferromagnetic metal-graphene interfaces (i.e. nickel- and cobalt-graphene interfaces) using both single-layer and few-layer graphene. Good qualitative agreement is obtained between theory and experiment. In particular, in both theory and experiment, we observe that the contact resistance of edge-contacted ferromagnetic metal-graphene interfac…
We achieved ohmic contacts down to 5 K on standard n-doped Ge samples by creating a strongly doped thin Ge layer between the metallic contacts and the Ge substrate. Thanks to the laser doping technique used, Gas Immersion Laser Doping, we could attain extremely large doping levels above the solubility limit, and thus reduce the metal/doped Ge contact resistance. We tested independently the influence of the doping concentration and doped layer thickness, and showed that the ohmic contact improves when increasing the doping level and is not affected when changing the doped thickness. Furthermore…
Nanoparticles usually exhibit pronounced anisotropic properties, and a close insight into the atomic-scale deformation mechanisms is of great interest. In present study, atomic simulations are conducted to analyze the compression of bcc nanoparticles, and orientation-dependent features are addressed. It is revealed that surface morphology under indenter predominantly governs the initial elastic response. The loading curve follows the flat punch contact model in [110] compression, while it obeys the Hertzian contact model in [111] and [001] compressions. In plastic deformation regime, full disl…
The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a process of metal-catalyzed etching in hydrogen, multiple nano-sized pits with zigzag edges are created in the graphene that form strong chemical bonds with deposited nickel metallization for source-drain contacts without the need for further annealing. This facile contact treatment prior to electrode metallization results in contact resistance as low as 100 ohm…
Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device performance. We have performed a series of experiments using bottom-contact poly(3-hexylthiophene) (P3HT) OFETs in the shallow channel limit to examine the injection process. When contacts are ohmic we find that contact resistivity is inversely proportional to carrier mobility, consistent with diffusion-limited injection. However, data from devices with other electrode…
The possible origins of metal-bilayer graphene (BLG) contact resistance are investigated by taking into consideration the bandgap formed by interfacial charge transfer at the metal contacts. Our results show that a charge injection barrier (Schottky barrier) does not contribute to the contact resistance because the BLG under the contacts is always degenerately doped. We also showed that the contact-doping-induced increase in the density of states (DOS) of BLG under the metal contacts decreases the contact resistance owing to enhanced charge carrier tunnelling at the contacts. The contact dopin…
InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer thereby requiring less top metal contact coverage on the surface. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 x 10-2 ohm cm2 and a higher light output power are measured in tunnel junction LED. A low resistance of 5 x 10-4 ohm cm2 was measured in a MBE grown tunnel junction on GaN PN junction device, indicating that the tunnel junction LED de…
We have investigated the contact resistance of rubrene single-crystal field-effect transistors (FETs) with Nickel electrodes by performing scaling experiments on devices with channel length ranging from 200 nm up to 300 $μ$m. We find that the contact resistance can be as low as 100 $Ω$cm with narrowly spread fluctuations. For comparison, we have also performed scaling experiments on similar Gold-contacted devices, and found that the reproducibility of FETs with Nickel electrodes is largely superior. These results indicate that Nickel is a very promising electrode material for the reproducible …
We report on experimental investigation of thermal contact resistance of the noncuring graphene thermal interface materials with the surfaces characterized by different degree of roughness. It is found that the thermal contact resistance depends on the graphene loading non-monotonically, achieving its minimum at the loading fraction of ~15 wt.%. Increasing the surface roughness by ~1 micrometer results in approximately the factor of x2 increase in the thermal contact resistance for this graphene loading. The obtained dependences of the thermal conductivity, thermal contact resistance, and the …
The gate-voltage (VG) dependence of the contact resistance (RC) in graphene field-effect transistors is characterized by the transmission line model. The RC-VG characteristics of Ag, Cu, and Au contacts display a dip around the charge neutrality point, and become even negative with Ag contacts. The dip structure is well reproduced by a model calculation that considers a metal-contact-induced potential variation near the metal contact edges. The apparently negative RC originates with the carrier doping from the metal contacts to the graphene channel and appears when the doping effect is more su…
Contact Resistance (RC) is a major limiting factor in the performance of graphene devices. RC is sensitive to the quality of the interface and the composition of the contact, which are affected by the graphene transfer process and contact deposition conditions. In this work, a linear correlation is observed between the composition of Ti contacts, characterized by X-ray photoelectron spectroscopy, and the Ti/graphene (Gr) contact resistance measured by the transfer length method. We find that contact composition is tunable via deposition rate and base pressure. Reactor base pressure is found to…
We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~7kohm*um2 and ~30kohm*um2 for Ni and Ti, respectively. We show that the contact resistance is a significant contributor to the total source-to-drain resistance and it is modulated by the back-gate voltage. We measure transfer characteristics showing double dip feature that we explain as the effect of doping due to charge transfer from the contacts causing minimum density of states for graphene under the contacts and …
We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact resistance is quantitatively the same for single-, bi-, and tri-layer graphene ($\sim800 \pm 200 Ωμm$), and is in all cases independent of gate voltage and temperature. We argue that the observed behavior is due to charge transfer from the metal, causing the Fermi level in the graphene region under the contacts to shift far away from the charge neutrality poin…
Point contacts between normal and ferromagnetic metals are investigated using magneto-resistance and transport spectroscopy measurements combined with micromagnetic simulations. Pronounced hysteresis in the point-contact resistance versus both bias current and external magnetic field are observed. It is found that such hysteretic resistance can exhibit, in addition to bi-stable resistance states found in ordinary spin valves, tri-stable resistance states with a middle resistance level. We interpret these observation in terms of surface spin-valve and spin-vortex states, originating from a subs…
The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extrac…
The spontaneous assembly of particles in suspension provides a strategy for inexpensive fabrication of devices with nanometer-scale control, such as single-electron transistors for memory or logic applications. A scaleable and robust method to form electrodes with the required nanometer-scale spacing, however, remains a major challenge. Here, we demonstrate a straightforward assembly approach in which metallic colloidal spheres serve as the electrodes. The devices are formed by assembly in suspension followed by deposition onto a patterned substrate. The key to this approach is that the inter-…
The metal-graphene contact resistance is a technological bottleneck for the realization of viable graphene based electronics. We report a useful model to find the gate tunable components of this resistance determined by the sequential tunneling of carriers between the 3D-metal and 2D-graphene underneath followed by Klein tunneling to the graphene in the channel. This model quantifies the intrinsic factors that control that resistance, including the effect of unintended chemical doping. Our results agree with experimental results for several metals.
We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$-Ga$_2$O$_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and total contact resistance (Rc) of 1.62e-7 Ohm.cm^2 and 0.023 Ohm.mm were realized for $β$-Ga$_2$O$_3$: Si films with n > 3e20 cm^-3. TLM structures were also fabricated on heavily Si doped coherently st…
We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ~ 0.3 k ohm.um, high on/off ratios up to > 109, and high drive currents exceeding 320 uA um-1. These favorable characteristics are combined with a two-terminal field-effect hole mobility ~ 2x102 cm2 V-…
We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was found to reduce interface contamination originating from incomplete removal of poly(methyl methacrylate) (PMMA) and photoresist. Our control experiment shows that exposure times up to 10 minutes did not i…
Monolayers of transition metal dichalcogenides (TMDCs) exhibit excellent electronic and optical properties. However, the performance of these two-dimensional (2D) devices are often limited by the large resistance offered by the metal contact interface. Till date, the carrier injection mechanism from metal to 2D TMDC layers remains unclear, with widely varying reports of Schottky barrier height (SBH) and contact resistance (Rc), particularly in the monolayer limit. In this work, we use a combination of theory and experiments in Au and Ni contacted monolayer MoS2 device to conclude the following…
For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors are investigated. A 2.6 times reduction in sheet resistance, and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON current, and 50% improvement in extrinsic field-effect mobility. The threshold voltage also confirms a negative shift upon the molecular doping. All studies demonstrate the feasibility of PEI molecular doping in MoS2 transistors, and its potential applications in layer-structured semiconduct…
Charge injection from electrodes into doped organic films is a widespread technology used in the majority of state-of-the-art organic semiconductor devices. Although such interfaces are commonly considered to form Ohmic contacts via strong band bending, an experiment that directly measures the contact resistance has not yet been demonstrated. In this study, we use a simple metal/doped organic semiconductor/metal stack and study its voltage-dependent resistance. A transport layer thickness variation proves that the presented experiment gains direct access to the contact resistance of the device…
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of both contact and channel resistance from the analysis of the current voltage characteristics of a single device, with no a-priori assumption on the two parameters. It solves the inconsistenci…
In this work, we propose an efficient computational scheme for first-principle quantum transport simulations to evaluate the open-boundary conditions. Its partitioning differentiates from conventional methods in that the contact self-energy matrices are constructed on smaller building blocks, principal layers (PL), while conventionally it was restricted to have the same lateral dimensions of the adjoining atoms in a channel region. Here, we obtain the properties of bulk electrodes through non-equilibrium Green's function (NEGF) approach with significant improvements in the computational effici…
We have studied the finite bias transport properties of a 2H-1T' MoS$_2$ lateral metal-semiconductor (M-S) junction by non-equilibrium Green's functions calculations, aimed at contacting the 2D channel in a field effect transistor. Our results indicate that (a) despite the fundamentally different electrostatics of line and planar dipoles, the Schottky barrier heights respond similarly to changes in doping and applied bias in 2D and 3D M-S junctions, (b) 2H-1T' MoS$_2$ lateral junctions are free from Fermi level pinning, (c) armchair interfaces have superior contacting properties vs.\ zigzag in…
Lateral spin valves are used to generate and characterize pure spin currents. Non-local voltage measured in such structures provides information about spin polarization and spin decay rates. For wide high-transparency F/N contacts it was shown that the Johnson-Silsbee non-local effect is substantially enriched by closed-loop electric currents driven by local spin injection in the electrically dangling part of the valve. For valves with low-transparency F/I/N tunnel contacts such circular currents are strongly suppressed, yet we show that the voltage modifications persist, may be significant, a…
Several data sets of electrical breakdown in air of single-wall carbon nanotubes (SWNTs) on insulating substrates are collected and analyzed. A universal scaling of the Joule breakdown power with nanotube length is found, which appears independent of the insulating substrates used or their thickness. This suggests the thermal resistances at the interface between SWNT and insulator, and between SWNT and electrodes, govern heat sinking from the nanotube. Analytical models for the breakdown power scaling are presented, providing an intuitive, physical understanding of the breakdown process. The e…
The results of studies of supercooling upon crystallization value of Bi, Sn and Pb nanosized particles on the Al substrate and between the Al layers have been presented. It has been shown the efficiency of usage of layered film systems for investigation of the limiting supercooling in particle-matrix systems with an eutectic type of interaction between components. The obtained results have been discussed and compared with literature data. ----- Predstavleny rezultaty issledovanij pereohlazhdenij pri kristallizacii nanorazmernyh chastic Bi, Sn i Pb na Al podlozhke i mezhdu sloyami alyuminiya. P…
Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices
Shanghai University（上海大学）；Monash University（蒙纳士大学）；RMIT University（皇家墨尔本理工大学）；National University of Singapore（新加坡国立大学）；Queensland University of Technology（昆士兰科技大学）
The thermal resistance between a nanostructure and a half-body is calculated in the framework of particle-phonons physics. The current models approximate the nanostructure as a thermal bath. We prove that the multireflections of heat carriers in the nanostructure significantly increase resistance in contradiction with former predictions. This increase depends on the shape of the nanostructure and the heat carriers mean free path only. We provide a general and simple expression for the contact resistance and examine the specific cases of nanowires and nanoparticles.
Large-scale molecular dynamics simulations are used to simulate a layer of nanoparticles diffusing on the surface of a liquid. Both a low viscosity liquid, represented by Lennard-Jones monomers, and a high viscosity liquid, represented by linear homopolymers, are studied. The organization and diffusion of the nanoparticles are analyzed as the nanoparticle density and the contact angle between the nanoparticles and liquid are varied. When the interaction between the nanoparticles and liquid is reduced the contact angle increases and the nanoparticles ride higher on the liquid surface, which ena…
Although monolayer black phosphorus (BP) or phosphorene has been successfully exfoliated and its optical properties have been explored, most of electrical performance of the devices is demonstrated on few-layer phosphorene and ultra-thin BP films. In this paper, we study the channel length scaling of ultra-thin BP field-effect transistors (FETs), and discuss a scheme for using various contact metals to change transistor characteristics. Through studying transistor behaviors with various channel lengths, the contact resistance can be extracted from the transfer length method (TLM). With differe…
The contact resistance between two dissimilar semiconductors is determined by the carrier transmission through their interface. Despite the ubiquitous presence of interfaces, quantitative simulation of charge transport across such interfaces is difficult, limiting the understanding of interfacial charge transport. This work employs Green's functions to study the charge transport across representative Si/Ge interfaces. For perfect interfaces, it is found that the transmittance is small and the contact resistance is high, not only because the mismatch of carrier pockets makes it hard to meet the…
We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties including a metal-insulator transition at a characteristic conductivity close to the quantum conductance e2/h, a high ON/OFF ratio of >107 at 170 K, and large electron and hole mobility of ~200 cm2V-1s-1 at 160 K. Decreasing the temperature to 77 K increases mobility of electrons to ~330 cm2V-1s-1 and that of holes to ~270 cm2V-1s-1. We attribute our abilit…
Theory of electrical spin injection from a ferromagnetic (FM) metal into a normal (N) conductor is presented. We show that tunnel contacts (T) can dramatically increase spin injection and solve the problem of the mismatch in the conductivities of a FM metal and a semiconductor microstructure. We also present explicit expressions for the spin-valve resistance of FM-T-N- and FM-T-N-T-FM-junctions with tunnel contacts at the interfaces and show that the resistance includes both positive and negative contributions (Kapitza resistance and injection conductivity, respectively).
Silicon dioxide and silicon (SiO$_{2}$/Si) interface plays a very important role in semiconductor industry. However, at nanoscale, its interfacial thermal properties haven't been well understood so far. In this paper, we systematically study the interfacial thermal resistance (Kapitza resistance) of a heterojunction composed of amorphous silicon dioxide and crystalline silicon by using molecular dynamics simulations. Numerical results have shown that Kapitza resistance at SiO$_{2}$/Si interface depends on the interfacial coupling strength remarkably. In the weak interfacial coupling limit, Kap…
We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $kΩ$ at 300 $K$. The yield of device resistances below 100 $kΩ$, at 300 $K$, is around 50%. We measure at 2 $K$ a hysteretic magneto-resistance due to the magnetization reversal of the ferromagnetic leads. The relative difference between the resistance in the antiparallel (AP) orientation and the parallel (P) orientation is about 2%.
In this paper, we report a novel chemical doping technique to reduce the contact resistance (Rc) of transition metal dichalcogenides (TMDs) - eliminating two major roadblocks (namely, doping and high Rc) towards demonstration of high-performance TMDs field-effect transistors (FETs). By using 1,2 dichloroethane (DCE) as the doping reagent, we demonstrate an active n-type doping density > 2*1019 cm-3 in a few-layer MoS2 film. This enabled us to reduce the Rc value to a record low number of 0.5 kohm*um, which is ~10x lower than the control sample without doping. The corresponding specific contact…
With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance. This is especially problematic for monolayers of semiconducting transition metal dichalcogenides (TMDs), which are promising candidates for atomically thin electronics. Ideal electrical contacts to them would require the use of similarly thin electrode materials while maintaining low contact resistances. Here we report a scalable method to fabricate ohmic graphene edge contacts to two representative m…
