Single crystals of SmFeAsO1-xFy of a size up to 120 micrometers have been grown from NaCl/KCl flux at a pressure of 30 kbar and temperature of 1350-1450 C using the cubic anvil high-pressure technique. The superconducting transition temperature of the obtained single crystals varies between 45 and 53 K.Obtained crystals are characterized by a full diamagnetic response in low magnetic fields and by a high critical current density in high magnetic fields. Structural refinement has been performed on single crystal. Differential thermal analysis investigations at 1 bar Ar pressure show decomposition of SmFeAsO1-xFy at 1302 C.
Superconducting poly- and single-crystalline samples of Sm1-xThxFeAsO with partial substitution of Sm3+ by Th4+ were synthesized and grown under high pressure and their structural, magnetic and transport properties are studied. The superconducting Tc reaches values higher than 50 K. Bulk superconducting samples (x = 0.08, 0.15, 0.3) do not show any signs of a phase transition from tetragonal to orthorhombic crystal structure at low temperatures. With Th substitution the unit cell parameters a and c shrink and the fractional atomic coordinate of the As site zAs remains almost unchanged, while t…
As-grown superconducting MgB_2 thin films have been grown on SrTiO_3(001), MgO(001), and Al_2O_3(0001) substrates by a molecular beam epitaxy (MBE) method with novel co-evaporation conditions of low deposition rate in ultra-high vacuum. The structural and physical properties of the films were studied by RHEED, XRD, electrical resistivity measurements, and SQUID magnetometer. The RHEED patterns indicate three-dimensional growth for MgB_2. The highest T_c determined by resistivity measurement was about 36K in these samples. And a clear Meissner effect below T_c was observed using magnetic suscep…
Gray tin, also known as α-Sn, has been attracting research interest recent years due to its topological nontrivial properties predicted theoretically. The Dirac linear band dispersion has been proved experimentally by angle resolved photoemission spectroscopy. We have grown a series of α-Sn thin film samples in two types with different substrates and thicknesses by molecular beam epitaxy. To explore the possible exotic physical properties related to the topological band structures, we have measured the electrical transport properties of our α-Sn thin film samples and observed multiple supercon…
NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the film are characterized to demonstrate that growth parameters such as substrate temperature and active nitrogen flux effect the structural phase of films, and thereby the superconducting critical temperature. Four phases of NbN are identified for films grown in different conditions. In a novel finding, we demonstrate that atomically flat and highly crystalline $β$-$\textrm{Nb}_2\textrm{N}$ films can be grown at substrate temperatures of 1100 \degree C or higher, and…
We investigate the complex relationship between the growth conditions and the structural and transport properties of $\mathrm{Ti_xO_y}$ thin films grown by molecular beam epitaxy. Transport properties ranging from metallicity to superconductivity and insulating states are stabilized by effectively tuning the O/Ti ratio via the Ti flux rate and the O partial pressure, $P_{Ox}$, for films grown on (0001)-$\mathrm{Al_2 O_3}$ substrates at 850$^{\circ}$ C. A cubic $c-\mathrm{TiO_{1\pmδ}}$ buffer layer is formed for low O/Ti ratios while a corundum cr-$\mathrm{Ti_2 O_3}$ layer is formed under highe…
We demonstrate that good superconductor/insulator/normal-metal tunnel junctions can be fabricated on as-grown superconducting MgB2 thin films. The as-grown films were prepared by coevaporation at low growth temperatures of around 280deg. The insulating barrier was formed by an Mg overlayer, which is subsequently oxidized in air. The tunneling spectra for Au/MgOx/MgB2 junctions showed a reproducible and well-defined superconducting gap (delta= ~ 2.5 meV). The resultant 2delta/ kBTc was significantly smaller than the predicted BCS value of 3.52.
Thin superconducting films of magnesium diboride (MgB2) with Tc \approx 24K were prepared on various oxide substrates by pulsed laser deposition (PLD) followed by an in-situ anneal. A systematic study of the influence of various in-situ annealing parameters shows an optimum temperature of about 600C in a background of 0.7 atm. of Ar/4%H2 for layers consisting of a mixture of magnesium and boron. Contrary to ex-situ approaches (e.g. reacting boron films with magnesium vapor at 900C), these films are processed below the decomposition temperature of MgB2. This may prove enabling in the formation …
We present very low temperature Scanning Tunneling Microscopy and Spectroscopy (STM/S) measurements in W-based amorphous superconducting nanodeposits grown using a metal-organic precursor and focused-ion-beam. The superconducting gap closely follows s-wave BCS theory, and STS images under magnetic fields show a hexagonal vortex lattice whose orientation is related to features observed in the topography through STM. Our results demonstrate that the superconducting properties at the surface of these deposits are very homogeneous, down to atomic scale. This, combined with the huge nanofabrication…
Superconducting thin films of MgB2 were deposited by Pulsed Laser Deposition on magnesium oxide and sapphire substrates. Samples grown at 450C in an argon buffer pressure of about 10-2 mbar by using a magnesium enriched target resulted to be superconducting with a transition temperature of about 25 K. Film deposited from a MgB2 sintered pellet target in ultra high vacuum conditions showed poor metallic or weak semiconducting behavior and they became superconducting only after an ex-situ annealing in Mg vapor atmosphere. Up to now, no difference in the superconducting properties of the films ob…
Superconducting magnesium diboride films with Tc0 ~ 24 K and sharp transition \~ 1 K were successfully prepared on silicon substrates by pulsed laser deposition from a stoichiometric MgB2 target. Contrary to previous reports, anneals at 630 degree and a background of 2x10^(-4) torr Ar/4%H2 were performed without the requirement of Mg vapor or an Mg cap layer. This integration of superconducting MgB2 films on silicon may thus prove enabling in superconductor-semiconductor device applications. Images of surface morphology and cross-section profiles by scanning electron microscopy (SEM) show that…
Epitaxial La1.85Sr0.15CuO4/La2/3Ca1/3MnO3 superlattices on (001)-oriented LaSrAlO4 substrates have been grown with pulsed laser deposition technique. Their structural, magnetic and superconducting properties have been determined with in-situ reflection high energy electron diffraction, x-ray diffraction, specular neutron reflectometry, scanning transmission electron microscopy, electric transport, and magnetization measurements. We find that despite the large mismatch between the in-plane lattice parameters of LSCO and LCMO these superlattices can be grown epitaxially and with a high crystalli…
Superconducting thin films of magnesium diboride (MgB$_2$) were prepared on MgO (001) substrate by a molecular beam epitaxy (MBE) method with the co-evaporation conditions of low deposition rate in ultra-high vacuum. The structural and physical properties of the films were studied by RHEED, XRD, XPS, resistivity and magnetization measurements.All films demonstrated superconductivity without use of any post-annealing process.The highest {\it T}$_{c,onset}$ determined by resistivity measurement was about 33K in the present samples.Anisotropic superconducting properties were evaluated by the resi…
Two dimensional (2D) superconductivity was studied by magnetotransport measurements on single-atomic-layer Pb films on a cleaved GaAs(110) surface. The superconducting transition temperature shows only a weak dependence on the parallel magnetic field up to 14 T, which is higher than the Pauli paramagnetic limit. Furthermore, the perpendicular magnetic field dependence of the sheet resistance is almost independent of the presence of the parallel field component. These results are explained in terms of an inhomogeneous superconducting state predicted for 2D metals with a large Rashba spin splitt…
Superconducting MgB2 thin films were fabricated on Al2O3(0001) substrates under an ex-situ processing conditions. Boron thin films were deposited by pulsed laser deposition followed by a post-annealing process. Resistance measurements of the deposited MgB2 films show Tc of about 39K, while scanning electron microscopy and x-ray diffraction analysis indicate that the films consist of well-crystallized grains with a highly c-axis-oriented structure.
The superconducting nominal "non-doped" $La_{1.85}Y_{0.15}CuO_4$ (LYCO) thin films are successfully prepared by dc magnetron-sputtering and in situ post-annealing in vacuum. The best $T_{C0}$ more than 13K is achieved in the optimal LYCO films with highly pure c-axis oriented T'-type structure. In the normal state, the quasi-quadratic temperature dependence of resistivity, the negative Hall coefficient and effect of oxygen content in the films are quite similar to the typical Ce-doped T'-214 cuprates, suggesting that T'-LYCO shows the electron-doping nature like known n-type cuprates, and is n…
Our recent year's studies of the prototypal FeSe and molecule-intercalated (Li,Fe)OHFeSe superconductor systems are briefly reviewed here, with emphasis on experimental observations of the link between the superconductivity and normal-state electronic property in the single crystals and films. These samples were successfully synthesized by our recently developed soft-chemical hydrothermal methods, which are also briefly described. Particularly in the Mn-doped high-Tc (Li,Fe)OHFeSe film, a strong enhancement of the superconducting critical current density was achieved, which is promising for pr…
We present very low temperature Scanning Tunneling Microscopy and Spectroscopy (STM/S) measurements of a W based amorphous thin film grown with focused-ion-beam. In particular, we address the superconducting properties close to the border, where the thickness of the superconducting film decreases, and the Au substrate emerges. When approaching the Au substrate, the superconducting tunneling conductance strongly increases around the Fermi level, and the quasiparticle peaks do not significantly change its position. Under magnetic fields, the vortex lattice is observed, with vortices positioned v…
A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding critical temperature of 11.5K and 13.4K, among the highest reported $T_c$ values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below $\sim$10%) were obtained using …
A non-equilibrium phase (Sr1-xLax)Fe2As2 was formed by epitaxial film-growth. The resulting films emerged superconductivity along with suppression of the resistivity anomaly that is associated with magnetic and structural phase transitions. The maximum critical temperature was 20.8 K, which is almost the same as that of directly electron-doped Sr(Fe1-xCox)2As2. Its electronic phase diagram is much similar to that of Sr(Fe1-xCox)2As2, indicating that the difference in the electron doping sites does not influence the superconducting properties of 122-type SrFe2As2.
As-grown superconducting thin films of MgB2 were prepared by molecular beam epitaxy (MBE), and studied by X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). Only films prepared at temperatures between 150 and 320 deg. showed superconductivity. A best TC onset of 36 K with a sharp transition width of -1 K was obtained although the film crystallinity was poor. The in-situ photoelectron spectra obtained on the surfaces of the MBE grown MgB2 films were free from dirt peaks. XPS revealed that the binding energy of the Mg 2p levels in MgB2 is close to that of metallic Mg, and the bindin…
Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures ($T_c$ $\sim$ 16.5 K) and largest gap among conventional superconductors. In its thin-film form, the $T_c$ of NbN is very sensitive to growth conditions and it still remains a challenge to grow NbN thin film (below 50 nm) with high $T_c$. Here, we report on the superconducting properties of NbN thin films grown by high-temperature chemical vapor deposition (HTCVD). Transport measurements reveal significantly lower disorder than pr…
Ferromagnet/Superconductor/Ferromagnet (F/S/F) trilayers constitute the core of a superconducting spin valve. The switching effect of the spin valve is based on interference phenomena occurring due to the proximity effect at the S/F interfaces. A remarkable effect is only expected if the core structure exhibits strong critical temperature oscillations, or most favorable, reentrant superconductivity, when the thickness of the ferromagnetic layer is increased. The core structure has to be grown on an antiferromagnetic oxide layer (or such layer to be placed on top) to pin by exchange bias the ma…
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the number of laser shots to 500. No superconductivity could be observed down to 40mK for doping level below 2.5 at.%. The critical temperature Tc then increased steeply to reach 0.6K for cB = 8 at%. No hysteresis was found for the transitions in magnetic field, which is characteristic of a type II superconductor. The corresponding upper critical field Hc2(0) w…
F-substituted NdOBiS2 superconducting single crystals were grown using CsCl/KCl flux. This is the first example of the single-crystal growth of a BiS2-based superconductor. The obtained single crystals had a plate-like shape with a size of 1-2 mm and a well-developed ab-plane. The crystal structure of the grown crystals was determined by single-crystal X-ray diffraction analysis to be the tetragonal space group P4/nmm (#129) with a = 3.996(3) A and c = 13.464(6) A. The chemical formula of the grown crystals was approximately Nd0.98(0.06)O0.7(0.1)F0.3(0.1)Bi0.98(0.04)S2, and Cs, K, and Cl were …
We report high-resolution scanning tunneling microscopy (STM) study of nano-sized Pb islands grown on SrTiO3, where three distinct types of gaps with different energy scales are revealed. At low temperature, an enlarged superconducting gap (Δs) emerges while there is no enhancement in superconducting transition temperature (Tc), giving rise to a larger BCS ratio 2Δs/kBTc ~ 6.22. The strong coupling here may originate from the electron-phonon coupling on the metal-oxide interface. As the superconducting gap is suppressed under applied magnetic field or at elevated temperature, Coulomb gap and p…
The magnetic moment in the superconducting and normal state of a crystalline FeTe0.65Se0.35 superconductor, grown by the Bridgman's method with relatively high growth rate, was measured. The temperature and magnetic field dependences of magnetization and its relaxation time were determined. Studied crystal, being non-uniform due to high growth rate of 5 mm/h, exhibits smaller width of superconducting transition in comparison with an ideal crystal grown with velocity of 1 mm/h, and the difference in magnetic properties of crystals grown with various growth rate, related to their microstructure,…
We report comprehensive angle-resolved photoemission investigations on the electronic structure of single crystal multiple-layer FeSe films grown on CaF2 substrate by pulsed laser deposition (PLD) method. Measurements on FeSe/CaF2 samples with different superconducting transition temperatures Tc of 4 K, 9 K and 14 K reveal electronic difference in their Fermi surface and band structure. Indication of the nematic phase transition is observed from temperature-dependent measurements of these samples; the nematic transition temperature is 140-160 K, much higher than 90 K for the bulk FeSe. Potassi…
Whether or not epitaxially grown superconducting films have the same bulk-like superconducting properties is an important concern. We report the structure and the electronic properties of epitaxially grown Ba(Fe1-xCox)2As2 films using scanning tunneling microscopy and scanning tunneling spectroscopy (STS). This film showed a different surface structure, (2sqrtx2sqrt2)R45 reconstruction, from those of as-cleaved surfaces from bulk crystals. The electronic structure of the grown film is different from that in bulk, and it is notable that the film exhibits the same superconducting transport prope…
The recent observation of superconducting state at atomic scale has motivated the pursuit of exotic condensed phases in two-dimensional (2D) systems. Here we report on a superconducting phase in two-monolayer crystalline Ga films epitaxially grown on wide band-gap semiconductor GaN(0001). This phase exhibits a hexagonal structure and only 0.552 nm in thickness, nevertheless, brings about a superconducting transition temperature Tc as high as 5.4 K, confirmed by in situ scanning tunneling spectroscopy, and ex situ electrical magneto-transport and magnetization measurements. The anisotropy of cr…
We have performed transverse-field muon spin relaxation (TF-$μ$SR) measurements on ambient-pressure-grown polycrystalline $\mathrm{LaO_{0.5}F_{0.5}BiS_{2}}$. From these measurements, no signature of magnetic order is found down to 25 mK. The value of the magnetic penetration depth extrapolated to 0 K is 0.89 (5) $μ$m. The temperature dependence of superconducting penetration depth is best described by either a multigap s + s-wave model with $Δ_{1}$ = 0.947 (7) meV and $Δ_{2}$ = 0.22 (4) meV or the ansiotropic s-wave model with $Δ(0)$ = 0.776 meV and anisotropic gap amplitude ratio $Δ_{min}/Δ_{…
A new approach to grow FeSe1-xTex single crystals with optical zone-melting technique was successfully employed. Crystals with actual composition 0.4 < x < 1.0 all show high crystallinity with no phase separation. The ability to visually observe the locally heated melt, and ease of use and control of the image furnace make this method a promising and time-efficient way for obtaining high-quality FeSe1-xTex crystals. Our results indicate that with adequate heat treatment, the non-uniform distribution of Se and Te atoms in crystal lattice can be effectively eliminated, while the transition width…
The growth mechanisms of MgB2 films obtained by different methods on various substrates are compared via a detailed cross-sectional scanning electron microscopy (SEM) study. The analyzed films include (a) samples obtained by an ex-situ post-anneal at 900 degree of e-beam evaporated boron in the presence of an Mg vapor (exhibiting bulk-like Tc0 about 38.8 K), (b) samples obtained by the same ex-situ 900 degree anneal of pulsed laser deposition (PLD)-grown Mg+B precursors (exhibiting Tc0 ~ 25 K), and (c) films obtained by a low-temperature (600 - 630 degree) in-situ anneal of PLD-grown Mg+B prec…
NbBiCh$_3$ (Ch = S, Se) misfit-layered superconducting single crystals were successfully grown using a CsCl/KCl flux for the first time. The obtained crystals had a well-developed habit parallel to the c-plane with a typical width of 1-2 mm and thickness of 10-40 um. The superconducting transition temperatures with zero resistivity of NbBiS$_3$ single crystals obtained from the nominal composition of Nb0.9Bi1.2S3 was 0.31 K, and that value of the NbBiSe$_3$ single crystals grown from the stoichiometry composition (NbBiSe$_3$) was 2.3 K. Sharp decreases in electric resistivity and magnetic susc…
We report a novel method of growing strongly-disordered superconducting titanium nitride (TiN) thin films by reactive electron-beam deposition. The normal state sheet resistance and superconducting critical temperature (Tc) can be tuned by controlling the deposition pressure in the range of 1.1*10^-6 to 3.1*10^-5 mbar} and film thickness d from 10nm to 300nm. For 10nm thick films, the sheet resistance reaches 1361 Ω/\square and T_c = 0.77K, which translates into an estimate for the sheet inductance as large as L_\square = 2.4nH/\square. Benefiting from the directionality of reactive evaporatio…
F-substituted LaOBiSe2 single crystals were grown using CsCl flux. The obtained single crystals showed a plate-like shape with a size of about 1.0 mm square. The c-axis lattice constant of the grown crystals was determined to be 14.114(3) Å. The superconducting critical temperature of the single crystal was approximately 3.5 K. The superconducting anisotropies were determined to be 49 and 24 using the upper critical field and the effective mass model, respectively.
The superconductor Sn$_{1-x}$In$_{x}$Te is derived from the topological crystalline insulator SnTe and is a candidate topological superconductor. So far, high-quality thin films of this material have not been available, even though such samples would be useful for addressing the nature of its superconductivity. Here we report the successful molecular beam epitaxy growth of superconducting Sn$_{1-x}$In$_{x}$Te films by using Bi$_2$Te$_3$ as a buffer layer. The data obtained from tunnel junctions made on such films show the appearance of two superconducting gaps, which points to the coexistence …
Herein, we report CeIrIn5 thin-film growth on a MgF2 (001) substrate using pulsed laser deposition technique. X-ray diffraction analysis showed that the thin films were either mainly a-axis-oriented (TF1) or a combination of a- and c-axis-oriented (TF2). The characteristic features of Kondo coherence temperature (Tcoh) and superconductivity (Tc) were clearly observed, where onset of Tc is 0.58 and 0.52 K, and Tcoh = 41 K and 37 K for TF1 and TF2, respectively. The temperature dependencies of the upper critical field (Hc2) of both thin films and the bulk CeIrIn5 single crystal revealed a scalin…
The two-dimensional electron gas at the crystalline LaAlO$_{3}$/SrTiO$_{3}$ (c-LAO/STO) interface has sparked large interest due to its exotic properties including an intriguing gate-tunable superconducting phase. While there is growing evidence of pronounced spatial inhomogeneity in the conductivity at STO-based interfaces, the consequences for superconductivity remain largely unknown. We study interfaces based on amorphous LAO top layers grown at room temperature (a-LAO/STO) and demonstrate a superconducting phase similar to c-LAO/STO, however, with a gate-tunable critical temperature of $46…
We show that the quality of Nd1.85Ce0.15CuO4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3 phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole…
Ba(Fe1-xCox)2As2 superconducting thin films have been grown on SrTiO3, (La,Sr)(Al,Ta)O3, LaAlO3 and YAlO3 (YAO) single crystal substrates by pulsed laser deposition. All the films, except on YAO, have been grown epitaxially without buffer layers. The films deposited on YAO contained 45 degree in-plane rotated grains and showed a broad superconducting transition. The onset Tc of the films is observed to increase from 16.2 K to 24.5 K with increasing c/a, mainly due to a slight distortion of the AsFe4 tetrahedron. From this correlation, we expect that higher superconducting transition temperatur…
The discovery of the interface enhanced superconductivity in the single layer film of FeSe epitaxially grown on SrTiO3 substrates has triggered a flurry of activity in the field of superconductivity. It raised the hope to find more conventional high-Tc superconductors which are purely driven by the electron-phonon interaction at ambient pressure. Here we report the experimental evidence from the measurement of scanning tunneling spectroscopy for the interface enhanced high-Tc superconductivity in the Pb thin film islands grown on SrTiO3 substrates. The superconducting energy gap of the Pb film…
Superconducting metal dichalcogenides (MDCs) present several similarities to the other layered superconductors like cuprates. The superconductivity in atomically thin MDCs has been demonstrated by recent experiments, however, the investigation of the superconductivity intertwined with other orders are scarce. Investigating the pseudogap in atomic layers of MDCs may help to understand the superconducting mechanism for these true two-dimensional (2D) superconducting systems. Herein we report a pseudogap opening in the tunneling spectra of thin layers of SnSe2 epitaxially grown on highly oriented…
Pr$_{1-x}$Ca$_x$Ba$_2$Cu$_3$O$_{7-δ}$($x\approx$0.5) thin films have been grown on SrTiO$_3$ and YSZ substrates by the pulsed laser ablation. The substrate temperature dependence of orientation and superconducting poperties were systematically studied. Good quality \textit{c} and {a}-axis orientated films can be obtained on SrTiO$_3$ via changing the substrate temperature solely. On YSZ, films with good \textit{c}-axis orientation can be grown, while it is hard to grow films with good \emph{a}-axis orientation by changing substrate temperature alone. The highest $T_{C0}$ is about 37K, which is…
The presumably unconventional superconductor Beta-FeSe was deposited by radio frequency sputtering and molecular beam epitaxy (MBE) from two elementary sources. Superconducting thin films were grown in (001)-orientation on MgO(100) and YAlO3(010) substrates. The morphology of the samples was studied and directly related to the superconducting properties of the Beta-FeSe thin films. The MBE grown thin films show microcracks down to the substrate and a roughness of about 100~nm. In contrast, sputter deposited superconducting thin films show a smooth surface with almost no precipitates. In both c…
In PrBa_2Cu_3O_{7-y} (Pr123) single crystals grown by the flux method the kink in the magnetic susceptibility chi_{ab}(T), connected with AFM ordering of Pr, disappears after field cooling (FC) in a field H||ab-plane whereas the kink in chi_c(T) remains unchanged after FC in H||c-axis. This seems to be connected with the coupling between the Pr and Cu(2) sublattices. The Curie constant C determined from the data reported for superconducting Pr123 crystals grown by traveling-solvent floating zone (TSFZ) method (Zou et al, Phys. Rev. Lett., 80, 1074 (1998)) is about one half of that for our flux…
We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the thinnest films showing that hetero-epitaxy is not achieved under a thickness of 3.3nm, which almost coincides with the first measurement of a superconducting state. The superconducting critical temperature rise takes place on a very narrow thickness range, of the order of a single monolayer (ML). The thinnest superconducting sample (3 nm/9ML) has an offset crit…
Cd-doped La(O,F)BiS2 single crystals were grown using a CsCl/KCl flux. The grown crystals have a plate-like shape with ~1-2 mm square size in a well-developed ab-plane. The Cd doping in the crystals was successfully characterized by single crystal X-ray diffraction and electron probe microanalysis techniques. The superconductivity of La(O,F)BiS2 was gradually suppressed with Cd doping. The superconducting transition temperature with zero resistivity of La(O0.54F0.46)(Bi0.92Cd0.08)S2 was 2.3 K. The Cd doping does not change the superconducting anisotropy so much, albeit the considerable suppres…
We have investigated the crystal structures and superconducting properties of thin films of FeSe$_{0.5}$Te$_{0.5}$ grown on eight different substrates. Superconductivity is not correlated with the lattice mismatch; rather it is correlated with the degree of in-plane orientation and with the lattice parameter ratio $c/a$. The best superconducting properties were observed in films on MgO and LaAlO$_3$ ($T_\mathrm{c}^\mathrm{zero}$ of 9.5 K). TEM observation showed that the presence or absence of an amorphous-like layer at the substrate surface plays a key role in determining the structural and s…
Spatial homogeneity of superconducting order parameter in NbN films grown by atomic layer deposition
Peter Grünberg Institute (PGI-3), Forschungszentrum Jülich（于利希研究中心彼得·格林伯格研究所）；Institute of Experimental Physics IV A, RWTH Aachen Universität（亚琛工业大学实验物理第四研究所）；Jülich Aachen Research Alliance (JARA)（于利希-亚琛研究联盟）；Leibniz Institute of Photonic Technology（莱布尼茨光子技术研究所）；Institute of Physics II, Universität zu Köln（科隆大学物理第二研究所）
Bulk FeSe is superconducting with a critical temperature $T_c$ $\cong$ 8 K and SrTiO$_3$ is insulating in nature, yet high-temperature superconductivity has been reported at the interface between a single-layer FeSe and SrTiO$_3$. Angle resolved photoemission spectroscopy and scanning tunneling microscopy measurements observe a gap opening at the Fermi surface below $\approx$ 60 K. Elucidating the microscopic properties and understanding the pairing mechanism of single-layer FeSe is of utmost importance as it is a basic building block of iron-based superconductors. Here, we use the low-energy …
High critical current densities Jc of 4 MA/cm2 at 4 K were obtained in Co-doped BaFe2As2 (BaFe2As2:Co) epitaxial films grown directly on (La, Sr)(Al, Ta)O3 substrates by pulsed laser deposition. Use of a highly pure target and improvement of film homogeneity were the critical factors to achieve the high Jc. The improved BaFe2As2:Co epitaxial films contained almost no Fe impurity and showed high crystallinity (crystallite tilt angle delta omega = 0.5 deg and twist angle delta fai = 0.5 deg) and a sharp superconducting transition with a width of 1.1 K. It is considered that these improvements re…
We have fabricated high-quality FeSe1-x superconducting films with a bulk Tc of 11-12 K on different substrates, Al2O3(0001), SrTiO3(100), MgO(100), and LaAlO3(100), by using a pulsed laser deposition technique. All the films were grown at a high substrate temperature of 610 oC, and were preferentially oriented along the (101) direction, the latter being to be a key to fabricating of FeSe1-x superconducting thin films with high Tc. According to the energy dispersive spectroscopy data, the Fe:Se composition ratio was 1:0.90+-0.02. The FeSe1-x film grown on a SrTiO3 substrate showed the best qua…
Superconducting and epitaxially grown LaFeAsOF thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with epitaxial relation (001)[100] parallel to (001)[100] and a FWHM value of 1deg. Furthermore, resistive measurement of the superconducting transition temperature revealed a Tc90 of 25K with a high residual resistive ratio of 6.8. The applied preparation technique, standard thin film pulsed laser deposition at room temperature in combination with a subsequent post annealin…
