脉冲Laser法生长的间接电子掺杂（Sr1-xLax）Fe2As2外延膜的超导性能和Phase Diagram
Superconducting Properties and Phase Diagram of Indirectly Electron-Doped (Sr1-xLax)Fe2As2 Epitaxial Films Grown by Pulsed Laser Deposition
摘要：
通过外延薄膜生长形成非平衡相（Sr_（1-x）Lax）Fe_2As_2。由此产生的薄膜出现超导性以及抑制与磁性和结构相变相关的电阻率异常。最大临界温度为20.8 K，与直接电子掺杂的Sr（Fe 1-xCox）2As 2的临界温度基本相同。其电子相图与Sr（Fe_（1-x）Co_x）_2As_2的电子相图非常相似，表明电子掺杂位置的不同并不影响122型SrFe_2As_2的超导性能。
英文摘要：
A non-equilibrium phase (Sr1-xLax)Fe2As2 was formed by epitaxial film-growth. The resulting films emerged superconductivity along with suppression of the resistivity anomaly that is associated with magnetic and structural phase transitions. The maximum critical temperature was 20.8 K, which is almost the same as that of directly electron-doped Sr(Fe1-xCox)2As2. Its electronic phase diagram is much similar to that of Sr(Fe1-xCox)2As2, indicating that the difference in the electron doping sites does not influence the superconducting properties of 122-type SrFe2As2.
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