NbBiCh $_3$（Ch = S，Se）错配层状超导单晶的生长和各向异性评价
Growth and anisotropy evaluation of NbBiCh$_3$ (Ch = S, Se) misfit-layered superconducting single crystals
摘要：
采用CsCl/KCl助熔剂首次成功地生长了NbBiCh $_3$（Ch = S，Se）错配层状超导单晶。所获得的晶体具有平行于c-平面的良好发育的习性，典型的宽度为1-2 mm，厚度为10-40 μ m。由Nb 0.9 Bi 1.2 S3的标称组成获得的NbBiS $_3$单晶的零电阻率超导转变温度为0.31 K，由化学计量组成（NbBiSe $_3$）生长的NbBiSe $_3$单晶的零电阻率超导转变温度值为2.3 K。电阻率和磁化率在约3 K时急剧下降，表明NbBiSe $_3$可能具有超导转变温度。生长的NbBiS $_3$和NbBiSe $_3$单晶的正常态各向异性值分别为2.2-2.4和1.5-1.6。
英文摘要：
NbBiCh$_3$ (Ch = S, Se) misfit-layered superconducting single crystals were successfully grown using a CsCl/KCl flux for the first time. The obtained crystals had a well-developed habit parallel to the c-plane with a typical width of 1-2 mm and thickness of 10-40 um. The superconducting transition temperatures with zero resistivity of NbBiS$_3$ single crystals obtained from the nominal composition of Nb0.9Bi1.2S3 was 0.31 K, and that value of the NbBiSe$_3$ single crystals grown from the stoichiometry composition (NbBiSe$_3$) was 2.3 K. Sharp decreases in electric resistivity and magnetic susceptibility at approximately 3 K suggested a possible superconducting transition temperature of NbBiSe$_3$. The normal-state anisotropy values of grown NbBiS$_3$ and NbBiSe$_3$ single crystals were 2.2-2.4 and 1.5-1.6, respectively.
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