We calculate the dependence on an applied electric field of the g tensor of a single electron in a self-assembled InAs/GaAs quantum dot. We identify dot sizes and shapes for which one in-plane component of the g tensor changes sign for realistic electric fields, and show this should permit full Bloch-sphere control of the electron spin in the quantum dot using only a static magnetic field and a single vertical electric gate.
We propose to synchronize Bloch oscillations in a double phase-slip junction by modulating the gate voltage rather than the bias voltage. We show this is advantageous and the relatively small a.c. modulation of the gate voltage gives rise to the pronounced plateaux of quantized current of the width of the order of Coulomb blockade threshold. We theoretically investigate the setup distinguishing three regimes of the strong, weak, and intermediate coupling defined by the ratio of the gate capacitance $C$ and the effective capacitance of the phase-slip junctions. An important feature of the inter…
Graphene features topological edge bands that connect the pair of Dirac points through either sectors of the 1D Brillouin zone depending on edge configurations (zigzag or bearded). Because of their flat dispersion, spontaneous edge magnetisation can arise from Coulomb interaction in graphene nanoribbons, which has caught remarkable interest. We find an anomalous Bloch oscillation in such edge bands, in which the flat dispersion freezes electron motion along the field direction, while the topological connection of the bands through the bulk leads to electron oscillation in the transverse direct…
In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on our already fabricated and published Si-nanowire (SiNW) devices. The technological cornerstones for this dual-gated general purpose FET contain Schottky S/D junctions on a silicon-on-insulator (SOI) substrate. The transistor type, i.e. n-type or p-type FET, is electrically selectable on the fly by applying an appropriate control-gate voltage which significantly increases the versatility and flexibility in the design…
Spin qubits offer one of the most promising routes to the implementation of quantum computers. Very recent results in semiconductor quantum dots show that electrically-controlled gating schemes are particularly well-suited for the realization of a universal set of quantum logical gates. Scalability to a larger number of qubits, however, remains an issue for such semiconductor quantum dots. In contrast, a chemical bottom-up approach allows one to produce identical units in which localized spins represent the qubits. Molecular magnetism has produced a wide range of systems with tailored properti…
We theoretically study coherent subharmonic (multi-photon) transitions of a harmonically driven spin. We consider two cases: magnetic resonance (MR) with a misaligned, i.e., non-transversal driving field, and electrically driven spin resonance (EDSR) of an electron confined in a one-dimensional, parabolic quantum dot, subject to Rashba spin-orbit interaction. In the EDSR case, we focus on the limit where the orbital level spacing of the quantum dot is the greatest energy scale. Then, we apply time-dependent Schrieffer-Wolff erturbation theory to derive a time-dependent effective two-level Hami…
We demonstrate an electrically controlled high-spin (S=5/2) to low-spin (S=1/2) transition in a three-terminal device incorporating a single Mn2+ ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the terpyridine moiety and thereby strengthen the ligand-field on the Mn-atom. Adding a single electron thus stabilizes the low-spin configuration and the corresponding sequential tunnelling current is suppressed by spin-blockade. From low-temperature inelastic cotunneling spectroscopy, we infer the magnetic excitation spectrum of the molecule and uncover also a stron…
We report a tunable spin mixing conductance, up to $\pm 22\%$, in a Y${}_{3}$Fe${}_{5}$O${}_{12}$/Platinum (YIG/Pt) bilayer.This control is achieved by applying a gate voltage with an ionic gate technique, which exhibits a gate-dependent ferromagnetic resonance line width. Furthermore, we observed a gate-dependent spin pumping and spin Hall angle in the Pt layer, which is also tunable up to $\pm$ 13.6\%. This work experimentally demonstrates spin current control through spin pumping and a gate voltage in a YIG/Pt bilayer, demonstrating the crucial role of the interfacial charge density for the…
Spin valves form a key building block in a wide range of spintronic concepts and devices from magnetoresistive read heads to spin-transfer-torque oscillators. We elucidate the dependence of the magnetic damping in the free layer on the angle its equilibrium magnetization makes with that in the fixed layer. The spin pumping-mediated damping is anisotropic and tensorial, with Gilbert- and Bloch-like terms. Our investigation reveals a mechanism for tuning the free layer damping in-situ from negligible to a large value via the orientation of fixed layer magnetization, especially when the magnets a…
We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent with charge trapping mechanisms. Pulsed operation leads to hysteresis-free I-V characteristics, which are studied with pulses as short as 75 ns and 150 ns at the drain and gate, respectively. The pulsed operation enables reliable extraction of GFET intrinsic transconductance and mobility values independent of sweep direction, which are up to a factor of two…
We demonstrate that the superconducting critical temperature (Tc) of thin niobium films can be electrically modulated in a liquid-gated geometry device. Tc can be suppressed and enhanced by applying positive and negative gate voltage, respectively, in a reversible manner within a range of about 0.1 K. At a fixed temperature below Tc, we observed that the superconducting critical current can be modulated by gate voltage. This result suggests a possibility of an electrically-controlled switching device operating at or above liquid helium temperature, where superconductivity can be turned on or o…
We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform magneto-transport measurements and find a crossover from weak localization to weak antilocalization effect with increasing gate voltage, which demonstrates that the Rashba spin-orbit coupling is tuned by the gate electrode. The efficiency of the gate tuning of the spin-orbit interaction is higher than those obtained for two-dimensional electron gas, and as high as that for …
We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field rotation experiments. In performing magnetic field sweeps we observe additional isotropic magnetic field dependence of the chemical potential which shows a non-monotonic behavior. The observed effects are explained by calculations based on the $\mathbf{k}\cdot\mathbf{p}$ kinetic exchange model of ferromagnetism in GaMnAs. Our device inverts the conventional …
The electronic structure and optical response of electrically gated bilayer graphene are studied by first-principles approaches. We have obtained the induced band gap that is in good agreement with experiment when the applied electric field is less than 1.5 V/nm. The infrared optical absorbance is calculated within the single-particle excitation picture and its fine structures are presented. In addition, the calculated infrared optical absorbance is found to be strongly depending on stacking styles of bilayer graphene and the polarization direction of the incident light, which provides efficie…
We use numerical simulations to analyze recent experimental measurements of short-channel carbon nanotube field-effect transistors with palladium contacts. We show that the gate strongly modulates the contact properties, an effect that is distinct from that observed in Schottky barrier carbon nanotube transistors. This modulation of the contacts by the gate allows for the realization of superior subthreshold swings for short channels, and improved scaling behavior. These results further elucidate the behavior of carbon nanotube-metal contacts, and should be useful in the optimization of high-p…
Quantum dynamics and kinetics of electrically gated graphene ribbons with lateral n-p and e-n-p junctions under magnetic field are investigated. It is shown that the snake-like states of quasiparticles skipping along the n-p interface do not manifest themselve in the main semiclassical part of the ribbon conductance. Giant oscillations of the conductance of a ribbon with an n-p-n junction are predicted and analytically calculated. Depending on the number of junctions inside the ribbon its magnetoresistance may be controllably changed by 50% - 90% by an extremely small change of the magnetic fi…
Exchange-coupled singlet-triplet spin qubits in two gate-defined double quantum dots are considered theoretically. Using charge density operators to describe the double-dot orbital states, we calculate the Coulomb couplings between the qubits, and identify optimal bias points for single- and two-qubit operations, as well as convenient idle positions. The same intuitive formulation is used to derive dephasing rates of these qubits due to the fluctuating charge environment, thereby providing the main considerations for a quantum computation architecture that is within current experimental capabi…
We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20000 cm^2/Vs) and ballistic electric transport on a scale larger than 200nm. We report a particularly large on/off ratio of the current in ABC-stacked trilayers, up to 250 for an average electric displacement of -0.08 V/nm, compatible with an electric field induced energy gap. The high quality of these devices is also demonstrated by the appearance of quantum Hall plateaus at magnet…
Silicon nanowires (Si NW) are ideal candidates for solution processable field effect transistors (FETs). The interface between the nanowire channel and the gate dielectric plays a crucial role in the FET performance, and it can be responsible for unwanted effects such as hysteresis of the I-V characteristics due to threshold voltage shift when the gate voltage is applied. Using gate-voltage bias stress measurements we show that a large hysteresis of up to 40V in Si NW FETs with SiO2 dielectric is mainly due to the holes traps at the nanowire/SiO2 interface. An approach for reducing this hyster…
We show that the electrical impedance of a small-capacitance Josephson junction includes besides the capacitive term $-i/ωC_B$ also an inductive term $iωL_B$. Similar to the known Bloch capacitance $C_B(q)$, the Bloch inductance $L_B(q)$ also depends periodically on the quasicharge $q$, and its maximum value achieved at $q=e (\textrm{mod} 2e)$ always exceeds the value of the Josephson inductance of this junction $L_J(ϕ)$ at fixed $ϕ=0$. The effect of the Bloch inductance on the dynamics of a single junction and a one-dimensional array is described.
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and fabricated silicon nanowire 3D-FET technology. The technological key features of this general purpose FET contain Schottky S/D junctions on a silicon-on-insulator (SOI) substrate additionally enabling high-temperature operation of the proposed device. The transistors charge carrier type, i.e. n- or ptype FET, is electrically switchable on the fly by applying…
We study the effect of polymer coating, pressure and temperature on the electrical characteristics of monolayer WSe2 back-gated transistors with quasi-ohmic Ni/Au contacts. We find that the removal of a layer of poly(methyl methacrylate) or decreasing the pressure change the device conductivity from p to n-type. We study the current-voltage characteristics as a function of the temperature and measure a gate-tunable Schottky barrier at the contacts with a height of 60 meV in flat-band condition. We report and discuss a change in the mobility and the subthreshold slope observed with increasing t…
We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS$_2$) configured in field effect transistor geometry. We observe an hundredfold increase in photoluminescence intensity and an increase in absorption at ~660 nm in these devices when an external gate voltage is decreased from +50 V to -50 V, while the photoluminescence wavelength remains nearly constant. In contrast, in bilayer MoS$_2$ devices we observe almost no changes in photoluminescence with gate voltage. We propose that the differing responses of the monolayer and bilayer d…
In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germanium without any tunnel charge current. We show that temperature gradients yield larger spin accumulations than pure electrical spin injection but, due to competing microscopic effects, the thermal sp…
We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate allows tuning of the QD-lead tunnel coupling in a region of constant electron number with appropriate orbital state. Using the side-gate effect we study the competition between Kondo correlations and superconducting pairing on the QD, observing a decrease in the supercurrent when the Kondo temperature is reduced below the superconducting energy gap in qualitati…
In this paper electron-impurity scattering coefficient of Bloch waves for one dimensional Dirac comb potential is used for calculation of temperature dependence of resistivity within kinetic theory. We restrict ourselves by scattering on impurities that is also modeled by zero-range potential. The standard averaging is expressed by integral that is evaluated within advanced numerical procedure. The plots on base of the calculations results demonstrate strong variability as function of temperature and impurity strength.
The spin-orbit (SO) interaction couples electron spin and momentum via a relativistic, effective magnetic field. While conveniently facilitating coherent spin manipulation in semiconductors, the SO interaction also inherently causes spin relaxation. A unique situation arises when the Rashba and Dresselhaus SO fields are matched, strongly protecting spins from relaxation, as recently demonstrated. Quantum computation and spintronics devices such as the paradigmatic spin transistor could vastly benefit if such spin protection could be expanded from a single point into a broad range accessible wi…
Cyclotron resonance (CR) is considered one of the fundamental phenomena in conducting systems. In this paper, we study CR in a gated two-dimensional (2D) electron system (ES). Namely, we analyze the absorption of electromagnetic radiation incident normal to the gated 2DES, where a standard dielectric substrate separates the 2D electron sheet and the metallic steering electrode ("gate"); the whole system is placed in the perpendicular magnetic field. Our analysis reveals the redshift of the absorption peak frequency compared to the electron cyclotron frequency. The redshift appears in low-frequ…
We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density wave phases. The evolution of the hysteresis and the presence of abrupt spikes in the current while sweeping the gate voltage suggest that the effect is electrical rather than self-heating. We attribute the gating to an electric-field effect on the co…
We outline an approach to endow a plain vanilla material with topological properties by creating topological bands in stacks of manifestly nontopological atomically thin materials. The approach is illustrated with a model system comprised of graphene stacked atop hexagonal-boron-nitride. In this case, the Berry curvature of the electron Bloch bands is highly sensitive to the stacking configuration. As a result, electron topology can be controlled by crystal axes alignment, granting a practical route to designer topological materials. Berry curvature manifests itself in transport via the valley…
We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tunings of the carrier density in the nanosheet and the potential difference across the nanosheet can be efficiently achieved with use of the dual gate. The quantum transport characteristics of the InAs nanosheet are investigated by magnetoconductance measurements at low temperatures. It is shown that the electron transport in the nanosheet can be tuned from the weak antilo…
We propose a four-terminal device designed to manipulate by all electrical means the spin of a magnetic adatom positioned at the edge of a quantum spin Hall insulator. We show that an electrical gate, able to tune the interface resistance between a quantum spin Hall insulator and the source and drain electrodes, can switch the device between two regimes: one where the system exhibits spin pumping and the other where the adatom remains in its ground state. This demonstrates an all-electrical route to control single spins by exploiting helical edge states of topological materials.
We report transport measurements of strained InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap through structural parameters and an external electric field. For highly strained CQWs with $x = 0.4$, we obtain a gap of 35 meV, an order of magnitude larger than that reported for binary InAs/GaSb CQWs. Using a dual-gate configuration, we demonstrate an electrical-field-driven topological phase transition, which manifests itself as a re-entrant behavior of the energy gap. The sizeable energy gap and high bulk resistivi…
Spin waves are excitations in ferromagnetic media that have been proposed as information carriers in hybrid spintronic devices with much lower operation power than conventional charge-based electronics. Their wave nature can be exploited in majority gates by using interference for computation. However, a scalable spin-wave majority gate that can be co-integrated alongside conventional electronics is still lacking. Here, we demonstrate a sub-micron inline spin-wave majority gate with fan-out. Time-resolved imaging of the magnetization dynamics by scanning transmission x-ray microscopy illustrat…
We study the electronic properties of dual-gated electron-hole bilayers in which the two layers are separated by a perfectly opaque tunnel barrier. Combining an electrostatic and thermodynamic analysis with mean-field theory estimates of interacting system chemical potentials, we explain the dependence of the electron and hole densities on the two gate voltages. Because chemical potential jumps occur for both electrons and holes at neutrality, there is a finite area in gate voltage parameter space over which electron and hole densities are equal. In that regime the electron-hole pair density d…
Twisted bilayer graphene (TBG) realizes a highly tunable, strongly interacting system featuring superconductivity and various correlated insulating states. We establish gate-defined wires in TBG with proximity-induced spin-orbit coupling as $(i)$ a tool for revealing the nature of correlated insulators and $(ii)$ a platform for Majorana-based topological qubits. In particular, we show that the band structure of a gate-defined wire immersed in an `inter-valley coherent' correlated insulator inherits electrically detectable fingerprints of symmetry breaking native to the latter. Surrounding the …
Enhanced coherence in HoW$_{10}$ molecular spin qubits has been demonstrated by use of Clock Transitions (CTs). More recently it was shown that, while operating at the CTs, it was possible to use an electrical field to selectively address HoW$_{10}$ molecules pointing in a given direction, within a crystal that contains two kinds of identical but inversion-related molecules. Herein we theoretically explore the possibility of employing the electric field to effect entangling two-qubit quantum gates among two neighbouring CT-protected HoW$_{10}$ qubits within a diluted crystal. We estimate the t…
We show that with a system of electrically-gated wide quantum wells embedded inside a simple dielectric waveguide structure, it is possible to excite, control, and observe waveguided exciton polaritons that carry an electric dipole moment. We demonstrate that the energy of the propagating dipolariton can be easily tuned using local electrical gates, that their excitation and extraction can be easily done using simple evaporated metal gratings, and that the dipolar interactions between polaritons and between polaritons and excitons can also be controlled by the applied electric fields. This sys…
We consider a CNOT gate operation under the influence of quantum bit-flip noise and demonstrate that ac fields can change bit-flip noise into phase noise and thereby improve coherence up to several orders of magnitude while the gate operation time remains unchanged. Within a high-frequency approximation, both purity and fidelity of the gate operation are studied analytically. The numerical treatment with a Bloch-Redfield master equation confirms the analytical results.
Crystal symmetry governs the nature of electronic Bloch states. For example, in the presence of time reversal symmetry, the orbital magnetic moment and Berry curvature of the Bloch states must vanish unless inversion symmetry is broken. In certain 2D electron systems such as bilayer graphene, the intrinsic inversion symmetry can be broken simply by applying a perpendicular electric field. In principle, this offers the remarkable possibility of switching on/off and continuously tuning the magnetic moment and Berry curvature near the Dirac valleys by reversible electrical control. Here we demons…
In this paper, several nanodevices which realize basic single heavy hole qubit operations are proposed and supported by time dependent self consistent Poisson-Schrödinger calculations using a four band heavy hole-light hole model. In particular we propose a set of nanodevices which can act as Pauli X, Y, Z quantum gates and as a gate that acts similar as a Hadamard gate (i.e. it creates a balanced superposition of basis states but with an additional phase factor) on the heavy hole spin qubit. We also present the design and simulation of a gated semiconductor nanodevice which can realize an arb…
The ability to engineer new states of matter and to control their electronic and spintronic properties by electric fields is at the heart of the modern information technology and driving force behind recent advances in van der Waals (vdW) heterostructures of two-dimensional materials. Here, we exploit a proximity-induced Rashba-Edelstein (REE) effect in vdW heterostructures of Weyl semimetal candidate MoTe2 and CVD graphene, where an unprecedented gate-controlled switching of spin-galvanic effect emerges due to an efficient spin-to-charge conversion at room temperature. The magnitude of the me…
The Bloch vector's path of a two-level system exposed to a monochromatic field exhibits, in the regime of strong coupling, complex corkscrew trajectories. By considering the infinitesimal evolution of the two-level system when the field is treated as a classical object, we show that the Bloch vector's rotation speed oscillates between zero and twice the rotation speed predicted by the rotating wave approximation. Cusps appear when the rotation speed vanishes. We prove analytically that in correspondence to cusps the curvature of the Bloch vector's path diverges. On the other hand, numerical da…
We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by inducing an electric dipole between them and applying an alternating electric field generated by in-plane gates. These qubits can be coupled with exchange interaction controlled by top detuning gates. The qubit device can be fabricated deep in the silicon lattice with atomic precision by scanning tunneling probe technique. We have combined a large-scale full band a…
Electrical control and detection of spin precession are experimentally demonstrated by using spin-resolved edge states in the integer quantum Hall regime. Spin precession is triggered at a corner of a biased metal gate, where electron orbital motion makes a sharp turn leading to a nonadiabatic change in the effective magnetic field via spin-orbit interaction. The phase of precession is controlled by the group velocity of edge-state electrons tuned by gate bias voltage: A spin-FET device is thus realized by all-electrical means, without invoking ferromagnetic material. The effect is also interp…
We present a modulated microwave approach for quantum computing with qubits comprising three spins in a triple quantum dot. This approach includes single- and two-qubit gates that are protected against low-frequency electrical noise, due to an operating point with a narrowband response to high frequency electric fields. Furthermore, existing double quantum dot advances, including robust preparation and measurement via spin-to-charge conversion, are immediately applicable to the new qubit. Finally, the electric dipole terms implicit in the high frequency coupling enable strong coupling with sup…
The electrical and optical response of a field-effect device comprising a network of semiconductor-enriched single-wall carbon nanotubes, gated with sodium chloride solution is investigated. Field-effect is demonstrated in a device that uses facile fabrication techniques along with a small-ion as the gate electrolyte - and this is accomplished as a result of the semiconductor enhancement of the tubes. The optical transparency and electrical resistance of the device are modulated with gate voltage. A time-response study of the modulation of optical transparency and electrical resistance upon ap…
